{"id":"https://openalex.org/W4386862380","doi":"https://doi.org/10.1007/s12633-023-02631-z","title":"Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect","display_name":"Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect","publication_year":2023,"publication_date":"2023-09-18","ids":{"openalex":"https://openalex.org/W4386862380","doi":"https://doi.org/10.1007/s12633-023-02631-z"},"language":"en","primary_location":{"id":"doi:10.1007/s12633-023-02631-z","doi":"https://doi.org/10.1007/s12633-023-02631-z","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s12633-023-02631-z","pdf_url":null,"source":{"id":"https://openalex.org/S52783196","display_name":"Silicon","issn_l":"1876-990X","issn":["1876-990X","1876-9918"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Silicon","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011072399","display_name":"Suparna Panchanan","orcid":"https://orcid.org/0000-0001-9346-8558","observed_orcids":["https://orcid.org/0000-0001-9346-8558"]},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Suparna Panchanan","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India","Department of Electronics and Communication Engineering, Regent Education and Research Foundation Group of Institutions, Kolkata, 700 121, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India","institution_ids":["https://openalex.org/I195459967"]},{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Regent Education and Research Foundation Group of Institutions, Kolkata, 700 121, India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089395601","display_name":"Reshmi Maity","orcid":"https://orcid.org/0000-0002-1254-3075","observed_orcids":["https://orcid.org/0000-0002-1254-3075"]},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Reshmi Maity","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India","institution_ids":["https://openalex.org/I195459967"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091134142","display_name":"Srimanta Baishya","orcid":"https://orcid.org/0000-0001-8984-8806","observed_orcids":["https://orcid.org/0000-0001-8984-8806"]},"institutions":[{"id":"https://openalex.org/I151903974","display_name":"National Institute Of Technology Silchar","ror":"https://ror.org/001ws2a36","country_code":"IN","type":"education","lineage":["https://openalex.org/I151903974"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Srimanta Baishya","raw_affiliation_strings":["Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, India","institution_ids":["https://openalex.org/I151903974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082695608","display_name":"N. P. Maity","orcid":"https://orcid.org/0000-0002-1256-5856","observed_orcids":["https://orcid.org/0000-0002-1256-5856"]},"institutions":[{"id":"https://openalex.org/I195459967","display_name":"Mizoram University","ror":"https://ror.org/04b1m3e94","country_code":"IN","type":"education","lineage":["https://openalex.org/I195459967"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Niladri Pratap Maity","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India","institution_ids":["https://openalex.org/I195459967"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5089395601"],"corresponding_institution_ids":["https://openalex.org/I195459967"],"apc_list":{"value":2990,"currency":"USD","value_usd":2990},"apc_paid":null,"fwci":1.1403,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.74436801,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"16","issue":"1","first_page":"265","last_page":"276"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9940999746322632,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9940999746322632,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.005100000184029341,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/quantum-effects","display_name":"quantum effects","score":0.824999988079071},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.8199999928474426},{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.9850000143051147},{"id":"https://openalex.org/keywords/silicon-dioxide-gate-dielectric","display_name":"silicon dioxide gate dielectric","score":0.777999997138977},{"id":"https://openalex.org/keywords/nanoscale-transistors","display_name":"nanoscale transistors","score":0.7360000014305115},{"id":"https://openalex.org/keywords/gate-oxide-thickness","display_name":"gate oxide thickness","score":0.5009999871253967}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7992196083068848},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.790847897529602},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5932183265686035},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.5544848442077637},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.5342546701431274},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5269585251808167},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5261568427085876},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4242698848247528},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2557324171066284},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13725823163986206},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10988548398017883},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.09740138053894043},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07149901986122131},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0686177909374237}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s12633-023-02631-z","doi":"https://doi.org/10.1007/s12633-023-02631-z","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s12633-023-02631-z","pdf_url":null,"source":{"id":"https://openalex.org/S52783196","display_name":"Silicon","issn_l":"1876-990X","issn":["1876-990X","1876-9918"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Silicon","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":41,"referenced_works":["https://openalex.org/W233104390","https://openalex.org/W1964572906","https://openalex.org/W1966943929","https://openalex.org/W1973168927","https://openalex.org/W1979743668","https://openalex.org/W2002966494","https://openalex.org/W2039294451","https://openalex.org/W2050234836","https://openalex.org/W2059644119","https://openalex.org/W2059667158","https://openalex.org/W2059952181","https://openalex.org/W2062439591","https://openalex.org/W2065100511","https://openalex.org/W2105943231","https://openalex.org/W2107139169","https://openalex.org/W2112549351","https://openalex.org/W2115792550","https://openalex.org/W2121779525","https://openalex.org/W2124216684","https://openalex.org/W2126039497","https://openalex.org/W2136132220","https://openalex.org/W2145633302","https://openalex.org/W2342668896","https://openalex.org/W2568674748","https://openalex.org/W2728265602","https://openalex.org/W2779034390","https://openalex.org/W2907703940","https://openalex.org/W2913880792","https://openalex.org/W2922309590","https://openalex.org/W2947133183","https://openalex.org/W3008117538","https://openalex.org/W3040912862","https://openalex.org/W3085453713","https://openalex.org/W3094421039","https://openalex.org/W3108885136","https://openalex.org/W3110681850","https://openalex.org/W3207470015","https://openalex.org/W4210878276","https://openalex.org/W4223994353","https://openalex.org/W4318066567","https://openalex.org/W4323915530"],"related_works":["https://openalex.org/W4301394267","https://openalex.org/W2059667158","https://openalex.org/W4318066567","https://openalex.org/W3094421039","https://openalex.org/W1980159012","https://openalex.org/W1976569134","https://openalex.org/W3198849894","https://openalex.org/W7212133216","https://openalex.org/W7204723431","https://openalex.org/W2500640783"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":6},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1}],"updated_date":"2026-10-15T10:00:46.086208","created_date":"2023-09-20T00:00:00"}