{"id":"https://openalex.org/W4385950657","doi":"https://doi.org/10.1063/5.0158129","title":"Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3","display_name":"Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3","publication_year":2023,"publication_date":"2023-08-17","ids":{"openalex":"https://openalex.org/W4385950657","doi":"https://doi.org/10.1063/5.0158129"},"language":"en","primary_location":{"id":"doi:10.1063/5.0158129","doi":"https://doi.org/10.1063/5.0158129","is_oa":true,"landing_page_url":"https://doi.org/10.1063/5.0158129","pdf_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0158129/18088200/075302_1_5.0158129.pdf","source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0158129/18088200/075302_1_5.0158129.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5024008821","display_name":"Nicholas J. Chittock","orcid":"https://orcid.org/0000-0003-0541-0175","observed_orcids":["https://orcid.org/0000-0003-0541-0175"]},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Nicholas J. Chittock","raw_affiliation_strings":["Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"],"raw_orcid":"https://orcid.org/0000-0003-0541-0175","affiliations":[{"raw_affiliation_string":"Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands","institution_ids":["https://openalex.org/I83019370"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Yi Shu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I115053289","display_name":"Oxford Instruments (United Kingdom)","ror":"https://ror.org/049zatd98","country_code":"GB","type":"company","lineage":["https://openalex.org/I115053289"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Yi Shu","raw_affiliation_strings":["Oxford Instruments Plasma Technology 2 , North End, Bristol BS49 4AP, United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Oxford Instruments Plasma Technology 2 , North End, Bristol BS49 4AP, United Kingdom","institution_ids":["https://openalex.org/I115053289"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036374291","display_name":"Simon D. Elliott","orcid":"https://orcid.org/0000-0001-5573-5694","observed_orcids":["https://orcid.org/0000-0001-5573-5694"]},"institutions":[{"id":"https://openalex.org/I203455613","display_name":"Schrodinger (United States)","ror":"https://ror.org/05a3z6914","country_code":"US","type":"company","lineage":["https://openalex.org/I203455613"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Simon D. Elliott","raw_affiliation_strings":["Schr\u00f6dinger Inc. 3 , 1540 Broadway, New York, New York 10036, USA"],"raw_orcid":"https://orcid.org/0000-0001-5573-5694","affiliations":[{"raw_affiliation_string":"Schr\u00f6dinger Inc. 3 , 1540 Broadway, New York, New York 10036, USA","institution_ids":["https://openalex.org/I203455613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062788432","display_name":"Harm C. M. Knoops","orcid":"https://orcid.org/0000-0003-2284-4477","observed_orcids":["https://orcid.org/0000-0003-2284-4477"]},"institutions":[{"id":"https://openalex.org/I115053289","display_name":"Oxford Instruments (United Kingdom)","ror":"https://ror.org/049zatd98","country_code":"GB","type":"company","lineage":["https://openalex.org/I115053289"]},{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["GB","NL"],"is_corresponding":false,"raw_author_name":"Harm C. M. Knoops","raw_affiliation_strings":["Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands","Oxford Instruments Plasma Technology 2 , North End, Bristol BS49 4AP, United Kingdom"],"raw_orcid":"https://orcid.org/0000-0003-2284-4477","affiliations":[{"raw_affiliation_string":"Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands","institution_ids":["https://openalex.org/I83019370"]},{"raw_affiliation_string":"Oxford Instruments Plasma Technology 2 , North End, Bristol BS49 4AP, United Kingdom","institution_ids":["https://openalex.org/I115053289"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018346857","display_name":"W. M. M. Kessels","orcid":"https://orcid.org/0000-0002-7630-8226","observed_orcids":["https://orcid.org/0000-0002-7630-8226"]},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"W. M. M. (Erwin). Kessels","raw_affiliation_strings":["Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"],"raw_orcid":"https://orcid.org/0000-0002-7630-8226","affiliations":[{"raw_affiliation_string":"Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands","institution_ids":["https://openalex.org/I83019370"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064064108","display_name":"Adriaan J. M. Mackus","orcid":"https://orcid.org/0000-0001-6944-9867","observed_orcids":["https://orcid.org/0000-0001-6944-9867"]},"institutions":[{"id":"https://openalex.org/I83019370","display_name":"Eindhoven University of Technology","ror":"https://ror.org/02c2kyt77","country_code":"NL","type":"education","lineage":["https://openalex.org/I83019370"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Adriaan J. M. Mackus","raw_affiliation_strings":["Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands"],"raw_orcid":"https://orcid.org/0000-0001-6944-9867","affiliations":[{"raw_affiliation_string":"Department of Applied Physics, Eindhoven University of Technology 1 , P.O. Box 513, 5600 MB Eindhoven, The Netherlands","institution_ids":["https://openalex.org/I83019370"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":{"value":3500,"currency":"USD","value_usd":3500},"fwci":1.7201,"has_fulltext":true,"cited_by_count":19,"citation_normalized_percentile":{"value":0.84975592,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":"134","issue":"7","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.913100004196167,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.913100004196167,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.05620000138878822,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.02070000022649765,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan","display_name":"GaN","score":0.7960000038146973},{"id":"https://openalex.org/keywords/atomic-layer-etching","display_name":"atomic layer etching","score":0.9879999756813049},{"id":"https://openalex.org/keywords/isotropic-etching","display_name":"isotropic etching","score":0.8870000243186951},{"id":"https://openalex.org/keywords/sf6-plasma","display_name":"SF6 plasma","score":0.9879999756813049},{"id":"https://openalex.org/keywords/trimethylaluminum","display_name":"trimethylaluminum","score":0.9829999804496765},{"id":"https://openalex.org/keywords/surface-smoothing","display_name":"surface smoothing","score":0.6800000071525574},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.800000011920929},{"id":"https://openalex.org/keywords/etch-rate","display_name":"etch rate","score":0.6489999890327454},{"id":"https://openalex.org/keywords/surface-cleaning","display_name":"surface cleaning","score":0.5630000233650208}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.731884241104126},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6629385948181152},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5839797258377075},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.5722083449363708},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.5564275979995728},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.48536980152130127},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.48170286417007446},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.46994951367378235},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4140286445617676},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3841573894023895},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3363989591598511},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3001314401626587},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15641671419143677},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.14790567755699158},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/5.0158129","doi":"https://doi.org/10.1063/5.0158129","is_oa":true,"landing_page_url":"https://doi.org/10.1063/5.0158129","pdf_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0158129/18088200/075302_1_5.0158129.pdf","source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:pure.tue.nl:openaire/5e374222-694c-4a00-953c-f766d9b79f51","doi":null,"is_oa":true,"landing_page_url":"https://research.tue.nl/files/308219311/075302_1_5.0158129.pdf","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Chittock, N J, Shu, Y, Elliott, S D, Knoops, H C M, Kessels, W M M & Mackus, A J M 2023, 'Isotropic atomic layer etching of GaN using SF 6 plasma and Al(CH 3 ) 3', Journal of Applied Physics, vol. 134, no. 7, 075302. https://doi.org/10.1063/5.0158129","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"doi:10.1063/5.0158129","doi":"https://doi.org/10.1063/5.0158129","is_oa":true,"landing_page_url":"https://doi.org/10.1063/5.0158129","pdf_url":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0158129/18088200/075302_1_5.0158129.pdf","source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G7406336354","display_name":null,"funder_award_id":"17124","funder_id":"https://openalex.org/F4320321800","funder_display_name":"Nederlandse Organisatie voor Wetenschappelijk Onderzoek"}],"funders":[{"id":"https://openalex.org/F4320321800","display_name":"Nederlandse Organisatie voor Wetenschappelijk Onderzoek","ror":"https://ror.org/04jsz6e67"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4385950657.pdf","grobid_xml":"https://content.openalex.org/works/W4385950657.grobid-xml"},"referenced_works_count":90,"referenced_works":["https://openalex.org/W1615623400","https://openalex.org/W1876337511","https://openalex.org/W1888481695","https://openalex.org/W1973821320","https://openalex.org/W1979544533","https://openalex.org/W2000815209","https://openalex.org/W2008074288","https://openalex.org/W2009042116","https://openalex.org/W2021945033","https://openalex.org/W2023390323","https://openalex.org/W2024025132","https://openalex.org/W2024726661","https://openalex.org/W2049605280","https://openalex.org/W2060658003","https://openalex.org/W2062652401","https://openalex.org/W2068809977","https://openalex.org/W2086957099","https://openalex.org/W2092157292","https://openalex.org/W2093914900","https://openalex.org/W2095567118","https://openalex.org/W2115541803","https://openalex.org/W2120145199","https://openalex.org/W2131854177","https://openalex.org/W2143106578","https://openalex.org/W2167180130","https://openalex.org/W2275214418","https://openalex.org/W2396514757","https://openalex.org/W2432399736","https://openalex.org/W2492871350","https://openalex.org/W2565827167","https://openalex.org/W2617106871","https://openalex.org/W2735323398","https://openalex.org/W2748739377","https://openalex.org/W2756113208","https://openalex.org/W2757803490","https://openalex.org/W2788013722","https://openalex.org/W2883335902","https://openalex.org/W2884700596","https://openalex.org/W2885754973","https://openalex.org/W2886228592","https://openalex.org/W2897976387","https://openalex.org/W2898817460","https://openalex.org/W2921912966","https://openalex.org/W2929150559","https://openalex.org/W2940092558","https://openalex.org/W2945696935","https://openalex.org/W2946871514","https://openalex.org/W2947888191","https://openalex.org/W2951495500","https://openalex.org/W2969919428","https://openalex.org/W2981223922","https://openalex.org/W2990840183","https://openalex.org/W2999672341","https://openalex.org/W3000164404","https://openalex.org/W3007565719","https://openalex.org/W3014160333","https://openalex.org/W3036093594","https://openalex.org/W3038038542","https://openalex.org/W3043387614","https://openalex.org/W3093402052","https://openalex.org/W3093511481","https://openalex.org/W3094489919","https://openalex.org/W3096266084","https://openalex.org/W3109218298","https://openalex.org/W3121745077","https://openalex.org/W3129030208","https://openalex.org/W3129820908","https://openalex.org/W3134465717","https://openalex.org/W3137547217","https://openalex.org/W3193834468","https://openalex.org/W3194501438","https://openalex.org/W3201008300","https://openalex.org/W3202485298","https://openalex.org/W3209225748","https://openalex.org/W3212464536","https://openalex.org/W4200011672","https://openalex.org/W4200371414","https://openalex.org/W4200394423","https://openalex.org/W4200424747","https://openalex.org/W4214619723","https://openalex.org/W4224277211","https://openalex.org/W4281484396","https://openalex.org/W4283394485","https://openalex.org/W4290844457","https://openalex.org/W4306321529","https://openalex.org/W4310056720","https://openalex.org/W4313317741","https://openalex.org/W4322734128","https://openalex.org/W4361009242","https://openalex.org/W4367677012"],"related_works":["https://openalex.org/W4309330420","https://openalex.org/W2617106871","https://openalex.org/W4286978446","https://openalex.org/W4366088247","https://openalex.org/W3164031477","https://openalex.org/W3014017113","https://openalex.org/W4391639394","https://openalex.org/W2748739377","https://openalex.org/W2951495500","https://openalex.org/W4322734128"],"abstract_inverted_index":{"GaN":[0,19,106,181,194],"is":[1,54,90,101],"an":[2,30,41],"enabling":[3],"material":[4],"for":[5,56,105,112,190],"light":[6],"emitting":[7],"diodes,":[8],"advanced":[9],"radio":[10],"frequency,":[11],"and":[12,51,65,87,118,128,186],"power":[13],"semiconductor":[14],"devices.":[15,195],"However,":[16],"fabrication":[17],"of":[18,60,124,135,144,160,193],"devices":[20],"often":[21],"relies":[22],"on":[23],"harsh":[24],"etch":[25,31,122],"processes,":[26],"which":[27,62],"can":[28],"leave":[29],"damage":[32],"layer,":[33],"limiting":[34],"final":[35],"device":[36],"performance.":[37],"In":[38],"this":[39,176],"work,":[40],"isotropic":[42],"atomic":[43],"layer":[44],"etching":[45,59,161],"(ALE)":[46],"process":[47,100,178],"involving":[48],"SF6":[49],"plasma":[50,99],"trimethylaluminium":[52],"[Al(CH3)3]":[53],"presented":[55],"the":[57,70,98,136,141,145],"controlled":[58],"GaN,":[61],"reduces":[63],"oxygen":[64],"carbon":[66],"contamination":[67],"while":[68],"smoothing":[69,172],"surface.":[71],"The":[72],"ALE":[73,114,177],"chemistry":[74],"was":[75,109],"first":[76],"examined":[77],"with":[78,121,167],"density":[79],"functional":[80],"theory.":[81],"A":[82],"comparison":[83],"between":[84],"proposed":[85],"thermal":[86],"plasma-driven":[88],"reactions":[89],"made":[91],"by":[92],"implementing":[93],"Natarajan\u2013Elliott":[94],"analysis,":[95],"highlighting":[96],"that":[97,140],"a":[102,168],"good":[103],"candidate":[104],"ALE.":[107],"Saturation":[108],"experimentally":[110],"confirmed":[111],"both":[113],"half-cycles":[115],"at":[116,162],"150":[117],"300":[119,163],"\u00b0C,":[120,164],"rates":[123],"0.31":[125],"\u00b1":[126,130,150,154],"0.01":[127],"0.40":[129],"0.02":[131],"nm/cycle,":[132],"respectively.":[133],"Analysis":[134],"films":[137,146],"post-ALE":[138],"shows":[139],"RMS":[142],"roughness":[143],"decreases":[147],"from":[148],"2.6":[149],"0.1":[151,155],"to":[152],"1.9":[153],"nm":[156,159],"after":[157],"25":[158],"in":[165],"agreement":[166],"previously":[169],"developed":[170],"curvature-dependent":[171],"model.":[173],"Taken":[174],"together,":[175],"enables":[179],"accurate":[180],"thickness":[182],"tuning,":[183],"surface":[184,187],"cleaning,":[185],"smoothing,":[188],"allowing":[189],"further":[191],"development":[192]},"counts_by_year":[{"year":2026,"cited_by_count":7},{"year":2025,"cited_by_count":7},{"year":2024,"cited_by_count":5}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2023-08-18T00:00:00"}