{"id":"https://openalex.org/W4385753164","doi":"https://doi.org/10.1088/2515-7639/acef98","title":"15 MeV proton damage in NiO/\u03b2-Ga2O3vertical rectifiers","display_name":"15 MeV proton damage in NiO/\u03b2-Ga2O3vertical rectifiers","publication_year":2023,"publication_date":"2023-08-11","ids":{"openalex":"https://openalex.org/W4385753164","doi":"https://doi.org/10.1088/2515-7639/acef98"},"language":"en","primary_location":{"id":"doi:10.1088/2515-7639/acef98","doi":"https://doi.org/10.1088/2515-7639/acef98","is_oa":true,"landing_page_url":"https://doi.org/10.1088/2515-7639/acef98","pdf_url":"https://iopscience.iop.org/article/10.1088/2515-7639/acef98/pdf","source":{"id":"https://openalex.org/S4210204056","display_name":"Journal of Physics Materials","issn_l":"2515-7639","issn":["2515-7639"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-1","ki-jl-1","norway-1","oarl","poland-20","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics: Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://iopscience.iop.org/article/10.1088/2515-7639/acef98/pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5031835528","display_name":"Jian-Sian Li","orcid":"https://orcid.org/0000-0002-2817-7612","observed_orcids":["https://orcid.org/0000-0002-2817-7612"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jian-Sian Li","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611-7011, UNITED STATES"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611-7011, UNITED STATES","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047622902","display_name":"Chao-Ching Chiang","orcid":"https://orcid.org/0000-0002-0447-8170","observed_orcids":["https://orcid.org/0000-0002-0447-8170"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chao-Ching Chiang","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611-7011, UNITED STATES"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611-7011, UNITED STATES","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066656964","display_name":"Xinyi Xia","orcid":"https://orcid.org/0000-0002-8644-8599","observed_orcids":["https://orcid.org/0000-0002-8644-8599"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Xinyi Xia","raw_affiliation_strings":["Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611, UNITED STATES"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611, UNITED STATES","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079992554","display_name":"Hsiao-Hsuan Wan","orcid":"https://orcid.org/0000-0002-6986-8217","observed_orcids":["https://orcid.org/0000-0002-6986-8217"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hsiao-Hsuan Wan","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, PO box 116005, Gainesville, Florida, 32611-7011, UNITED STATES"],"raw_orcid":"https://orcid.org/0000-0002-6986-8217","affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, PO box 116005, Gainesville, Florida, 32611-7011, UNITED STATES","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100462779","display_name":"Jihyun Kim","orcid":"https://orcid.org/0000-0002-5634-8394","observed_orcids":["https://orcid.org/0000-0002-5634-8394","https://orcid.org/0000-0002-5119-6627"]},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jihyun Kim","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Seoul National University, CBE, Gwanak-gu, 08826, Korea (the Republic of)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Seoul National University, CBE, Gwanak-gu, 08826, Korea (the Republic of)","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fan Ren","raw_affiliation_strings":["Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611, UNITED STATES"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chemical Engineering, University of Florida, Chemical Engineering, Gainesville, Florida, 32611, UNITED STATES","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S J Pearton","raw_affiliation_strings":["Department of Materials Science & Engineering, University of Florida, 100 Rhines Hall, PO Box 116400, Gainesville, FL 32611-6400, USA, Gainesville, Florida, 32611, UNITED STATES"],"raw_orcid":"https://orcid.org/0000-0001-6498-1256","affiliations":[{"raw_affiliation_string":"Department of Materials Science & Engineering, University of Florida, 100 Rhines Hall, PO Box 116400, Gainesville, FL 32611-6400, USA, Gainesville, Florida, 32611, UNITED STATES","institution_ids":["https://openalex.org/I33213144"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2475,"currency":"USD","value_usd":2475},"apc_paid":{"value":2475,"currency":"USD","value_usd":2475},"fwci":1.2049,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.74862497,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":"6","issue":"4","first_page":"045003","last_page":"045003"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.0020000000949949026,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10592","display_name":"Fusion materials and technologies","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/proton-irradiation","display_name":"proton irradiation","score":0.777999997138977},{"id":"https://openalex.org/keywords/radiation-damage","display_name":"radiation damage","score":0.6930000185966492},{"id":"https://openalex.org/keywords/reverse-breakdown-voltage","display_name":"reverse breakdown voltage","score":0.8939999938011169},{"id":"https://openalex.org/keywords/carrier-concentration","display_name":"carrier concentration","score":0.5669999718666077},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.9649999737739563},{"id":"https://openalex.org/keywords/reverse-leakage-current","display_name":"reverse leakage current","score":0.9079999923706055},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.7900000214576721},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.7459999918937683},{"id":"https://openalex.org/keywords/carrier-removal-rate","display_name":"carrier removal rate","score":0.906000018119812},{"id":"https://openalex.org/keywords/schottky-rectifiers","display_name":"Schottky rectifiers","score":0.6449999809265137},{"id":"https://openalex.org/keywords/ga2o3","display_name":"gallium oxide","score":0.6399999856948853}],"concepts":[{"id":"https://openalex.org/C22078206","wikidata":"https://www.wikidata.org/wiki/Q1418023","display_name":"Fluence","level":3,"score":0.8751938343048096},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7075864672660828},{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.6627843379974365},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.647705078125},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.5866479873657227},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5822407603263855},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5812749862670898},{"id":"https://openalex.org/C20615193","wikidata":"https://www.wikidata.org/wiki/Q2309288","display_name":"Reverse leakage current","level":4,"score":0.5596933960914612},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5136346220970154},{"id":"https://openalex.org/C54516573","wikidata":"https://www.wikidata.org/wiki/Q2294","display_name":"Proton","level":2,"score":0.4883982539176941},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.42466503381729126},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3444591760635376},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2809717059135437},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.22938328981399536},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.08148026466369629},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08032181859016418},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.074957937002182},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/2515-7639/acef98","doi":"https://doi.org/10.1088/2515-7639/acef98","is_oa":true,"landing_page_url":"https://doi.org/10.1088/2515-7639/acef98","pdf_url":"https://iopscience.iop.org/article/10.1088/2515-7639/acef98/pdf","source":{"id":"https://openalex.org/S4210204056","display_name":"Journal of Physics Materials","issn_l":"2515-7639","issn":["2515-7639"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-1","ki-jl-1","norway-1","oarl","poland-20","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics: Materials","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:aa4ee73a88be4850abda0a6cff127d81","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/aa4ee73a88be4850abda0a6cff127d81","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"JPhys Materials, Vol 6, Iss 4, p 045003 (2023)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1088/2515-7639/acef98","doi":"https://doi.org/10.1088/2515-7639/acef98","is_oa":true,"landing_page_url":"https://doi.org/10.1088/2515-7639/acef98","pdf_url":"https://iopscience.iop.org/article/10.1088/2515-7639/acef98/pdf","source":{"id":"https://openalex.org/S4210204056","display_name":"Journal of Physics Materials","issn_l":"2515-7639","issn":["2515-7639"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-1","ki-jl-1","norway-1","oarl","poland-20","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics: Materials","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G535086096","display_name":null,"funder_award_id":"KRIT-CT-21-034","funder_id":"https://openalex.org/F4320334874","funder_display_name":"Defense Acquisition Program Administration"},{"id":"https://openalex.org/G7878941583","display_name":null,"funder_award_id":"2020M3H4A3081799","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322064","display_name":"Korea Institute for Advancement of Technology","ror":"https://ror.org/015w1qa96"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320334874","display_name":"Defense Acquisition Program Administration","ror":"https://ror.org/04bjg9m96"}],"has_content":{"pdf":true,"grobid_xml":false},"content_urls":{"pdf":"https://content.openalex.org/works/W4385753164.pdf"},"referenced_works_count":41,"referenced_works":["https://openalex.org/W2783187026","https://openalex.org/W2897102015","https://openalex.org/W2905220617","https://openalex.org/W2913236195","https://openalex.org/W3023030850","https://openalex.org/W3042514039","https://openalex.org/W3047073338","https://openalex.org/W3120940837","https://openalex.org/W3122996276","https://openalex.org/W3126641858","https://openalex.org/W3138188852","https://openalex.org/W3163500622","https://openalex.org/W3193574787","https://openalex.org/W3198076162","https://openalex.org/W3210047568","https://openalex.org/W4210718110","https://openalex.org/W4210901099","https://openalex.org/W4214842737","https://openalex.org/W4224302556","https://openalex.org/W4225484429","https://openalex.org/W4281648216","https://openalex.org/W4284881561","https://openalex.org/W4287959398","https://openalex.org/W4292851175","https://openalex.org/W4292961751","https://openalex.org/W4293812080","https://openalex.org/W4297819175","https://openalex.org/W4309029977","https://openalex.org/W4312909914","https://openalex.org/W4313527849","https://openalex.org/W4315784951","https://openalex.org/W4319996503","https://openalex.org/W4321184608","https://openalex.org/W4321596272","https://openalex.org/W4367176179","https://openalex.org/W4376622366","https://openalex.org/W4378588751","https://openalex.org/W4379514256","https://openalex.org/W4380883083","https://openalex.org/W4385240096","https://openalex.org/W4388676585"],"related_works":["https://openalex.org/W2783881877","https://openalex.org/W4399865702","https://openalex.org/W2612763167","https://openalex.org/W4383498513","https://openalex.org/W4405358626","https://openalex.org/W4386854010","https://openalex.org/W4403981899","https://openalex.org/W4403101503","https://openalex.org/W4287959398","https://openalex.org/W2999377230"],"abstract_inverted_index":{"Abstract":[0],"15":[1],"MeV":[2],"proton":[3],"irradiation":[4],"of":[5,25,41,76,95,103],"vertical":[6],"geometry":[7],"NiO/\u03b2-Ga2O3heterojunction":[8],"rectifiers":[9,145],"produced":[10],"reductions":[11],"in":[12,49,59,64,113,123,130,133],"reverse":[13,69,90],"breakdown":[14],"voltage":[15],"from":[16],"4.3":[17],"kV":[18,21,28],"to":[19,56,85,93,143],"3.7":[20],"for":[22,29,78,137],"a":[23,57,74],"fluence":[24,116,139],"1013ions\u00b7cm\u22122and":[26],"1.93":[27],"1014ions\u00b7cm\u22122.":[30],"The":[31,68],"forward":[32],"current":[33,71],"density":[34,61,102],"was":[35],"also":[36],"decreased":[37],"by":[38,73,110,119],"1\u20132":[39],"orders":[40],"magnitude":[42],"under":[43],"these":[44],"conditions,":[45],"with":[46],"associated":[47],"increase":[48],"on-state":[50],"resistanceRON.":[51],"These":[52],"changes":[53],"are":[54],"due":[55,92],"reduction":[58],"carrier":[60,101],"and":[62,118],"mobility":[63],"the":[65,79,96,99,114,124,131,134,138,147],"drift":[66],"region.":[67],"leakage":[70,91],"increased":[72,89],"factor":[75],"\u223c2":[77],"higher":[80],"fluence.":[81],"Subsequent":[82],"annealing":[83,112],"up":[84],"400":[86],"\u00b0C":[87],"further":[88],"deterioration":[94],"contacts,":[97],"but":[98],"initial":[100],"2.2":[104],"\u00d7":[105],"1016cm\u22123was":[106],"almost":[107],"fully":[108],"restored":[109],"this":[111],"lower":[115],"samples":[117],"more":[120],"than":[121],"50%":[122],"1014cm\u22122irradiated":[125],"devices.":[126],"Carrier":[127],"removal":[128],"rates":[129],"Ga2O3were":[132],"range":[135,140],"190\u20131200":[136],"employed,":[141],"similar":[142],"Schottky":[144],"without":[146],"NiO.":[148]},"counts_by_year":[{"year":2026,"cited_by_count":7},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":7}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2023-08-12T00:00:00"}