{"id":"https://openalex.org/W4385541932","doi":"https://doi.org/10.1109/eeeic/icpseurope57605.2023.10194837","title":"Experimental Study and Comparison of Switching Loss Behavior of Si IGBT and SiC MOSFET in Dual Active Bridge Series Resonant Converter","display_name":"Experimental Study and Comparison of Switching Loss Behavior of Si IGBT and SiC MOSFET in Dual Active Bridge Series Resonant Converter","publication_year":2023,"publication_date":"2023-06-06","ids":{"openalex":"https://openalex.org/W4385541932","doi":"https://doi.org/10.1109/eeeic/icpseurope57605.2023.10194837"},"language":"en","primary_location":{"id":"doi:10.1109/eeeic/icpseurope57605.2023.10194837","doi":"https://doi.org/10.1109/eeeic/icpseurope57605.2023.10194837","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eeeic/icpseurope57605.2023.10194837","pdf_url":null,"source":{"id":"https://openalex.org/S4363607938","display_name":"IEEE International Conference on Environment and Electrical Engineering and IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Conference on Environment and Electrical Engineering and 2023 IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057003277","display_name":"Onkar Bhakare","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Onkar Bhakare","raw_affiliation_strings":["IIT Madras,Department of Electrical Engineering,Chennai,India","Department of Electrical Engineering, IIT Madras, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IIT Madras,Department of Electrical Engineering,Chennai,India","institution_ids":["https://openalex.org/I24676775"]},{"raw_affiliation_string":"Department of Electrical Engineering, IIT Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061368392","display_name":"Kousik Ghosh","orcid":"https://orcid.org/0000-0002-1349-122X","observed_orcids":["https://orcid.org/0000-0002-1349-122X"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Kousik Ghosh","raw_affiliation_strings":["IIT Madras,Department of Electrical Engineering,Chennai,India","Department of Electrical Engineering, IIT Madras, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IIT Madras,Department of Electrical Engineering,Chennai,India","institution_ids":["https://openalex.org/I24676775"]},{"raw_affiliation_string":"Department of Electrical Engineering, IIT Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061300737","display_name":"Surja Sekhar Chakraborty","orcid":"https://orcid.org/0000-0002-4781-9369","observed_orcids":["https://orcid.org/0000-0002-4781-9369"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Surja Sekhar Chakraborty","raw_affiliation_strings":["IIT Madras,Department of Electrical Engineering,Chennai,India","Department of Electrical Engineering, IIT Madras, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IIT Madras,Department of Electrical Engineering,Chennai,India","institution_ids":["https://openalex.org/I24676775"]},{"raw_affiliation_string":"Department of Electrical Engineering, IIT Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007622780","display_name":"Kamalesh Hatua","orcid":"https://orcid.org/0000-0003-4871-2149","observed_orcids":["https://orcid.org/0000-0003-4871-2149"]},"institutions":[{"id":"https://openalex.org/I24676775","display_name":"Indian Institute of Technology Madras","ror":"https://ror.org/03v0r5n49","country_code":"IN","type":"education","lineage":["https://openalex.org/I24676775"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Kamalesh Hatua","raw_affiliation_strings":["IIT Madras,Department of Electrical Engineering,Chennai,India","Department of Electrical Engineering, IIT Madras, Chennai, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IIT Madras,Department of Electrical Engineering,Chennai,India","institution_ids":["https://openalex.org/I24676775"]},{"raw_affiliation_string":"Department of Electrical Engineering, IIT Madras, Chennai, India","institution_ids":["https://openalex.org/I24676775"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I24676775"],"apc_list":null,"apc_paid":null,"fwci":3.9239,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.95037841,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.8633000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.8633000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.09799999743700027,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.02239999920129776,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/switching-losses","display_name":"switching losses","score":0.9800000190734863},{"id":"https://openalex.org/keywords/si-igbt","display_name":"Si IGBT","score":0.8519999980926514},{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.9990000128746033},{"id":"https://openalex.org/keywords/dual-active-bridge-converter","display_name":"dual active bridge converter","score":0.875},{"id":"https://openalex.org/keywords/series-resonant-converter","display_name":"series resonant converter","score":1.0},{"id":"https://openalex.org/keywords/zero-current-switching","display_name":"zero-current switching","score":0.9860000014305115},{"id":"https://openalex.org/keywords/dead-time","display_name":"dead time","score":0.9190000295639038},{"id":"https://openalex.org/keywords/stored-charge","display_name":"stored charge","score":0.6669999957084656},{"id":"https://openalex.org/keywords/power-semiconductor-devices","display_name":"power semiconductor devices","score":0.4819999933242798},{"id":"https://openalex.org/keywords/isolated-dc-dc-converter","display_name":"isolated DC-DC converter","score":0.6620000004768372}],"concepts":[{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.8773777484893799},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6378782391548157},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5395461916923523},{"id":"https://openalex.org/C2985627981","wikidata":"https://www.wikidata.org/wiki/Q828827","display_name":"Power loss","level":3,"score":0.4836820065975189},{"id":"https://openalex.org/C199310435","wikidata":"https://www.wikidata.org/wiki/Q7659121","display_name":"Switching time","level":2,"score":0.4673246443271637},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45021939277648926},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.43020039796829224},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36629438400268555},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34648817777633667},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34427547454833984},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2280811071395874},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.20182812213897705},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18507009744644165}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/eeeic/icpseurope57605.2023.10194837","doi":"https://doi.org/10.1109/eeeic/icpseurope57605.2023.10194837","is_oa":false,"landing_page_url":"https://doi.org/10.1109/eeeic/icpseurope57605.2023.10194837","pdf_url":null,"source":{"id":"https://openalex.org/S4363607938","display_name":"IEEE International Conference on Environment and Electrical Engineering and IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE International Conference on Environment and Electrical Engineering and 2023 IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7207000255584717,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"},{"score":0.5690000057220459,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1947553595","https://openalex.org/W1993447000","https://openalex.org/W2042527912","https://openalex.org/W2099976946","https://openalex.org/W2140202195","https://openalex.org/W2167459638","https://openalex.org/W2465785827","https://openalex.org/W2519318517","https://openalex.org/W2527981221","https://openalex.org/W2572224159","https://openalex.org/W2577976329","https://openalex.org/W2805465841","https://openalex.org/W2967146328","https://openalex.org/W2990940453","https://openalex.org/W3092359799","https://openalex.org/W4319663682"],"related_works":["https://openalex.org/W2898993446","https://openalex.org/W2996351673","https://openalex.org/W2797656174","https://openalex.org/W3090171134","https://openalex.org/W3214610927","https://openalex.org/W7018033214","https://openalex.org/W4392566320","https://openalex.org/W1902744722","https://openalex.org/W4417333748","https://openalex.org/W1955292501"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,18,71,82,130,166,194,202],"detailed":[4,58],"investigation":[5],"of":[6,11,37,49,52,85,116,121,153,198],"the":[7,34,47,111,127,140,161,183,188],"switching":[8,63,86,105,119,134,150],"loss":[9,35,64,87,106,120,135,151,170],"behavior":[10,36,152],"Si":[12,154,177],"IGBT":[13,53,91,155],"and":[14,33,129,156],"SiC":[15,157,180],"MOSFET":[16,158],"in":[17,54,59,90,104,133,149,182],"Dual":[19],"Active":[20],"Bridge":[21],"Series":[22],"Resonant":[23],"Converter":[24],"(DABSRC).":[25],"The":[26,62,114,147,169],"converter":[27],"is":[28,43,57,65,73,88,96,107,123,136,163],"operated":[29,74],"at":[30,40],"different":[31],"frequencies":[32,42],"both":[38],"devices":[39],"various":[41],"comprehensively":[44],"analyzed.":[45],"Moreover,":[46],"consequence":[48],"stored":[50],"charges":[51],"its":[55],"losses":[56],"this":[60],"paper.":[61],"expected":[66],"to":[67,110],"be":[68],"minimal":[69],"if":[70],"device":[72],"under":[75],"Zero":[76],"Current":[77],"Switching":[78],"(ZCS)":[79],"condition":[80],"but":[81],"substantial":[83],"amount":[84],"found":[89,97],"device.":[92],"An":[93],"operating":[94],"point":[95],"through":[98,126,165,193],"experiments,":[99,162],"where":[100],"51.92":[101],"%":[102],"reduction":[103,132],"observed":[108,159],"compared":[109],"ZCS":[112],"case.":[113],"effect":[115],"dead-time":[117,141],"on":[118,138,175],"IGBTs":[122,178],"also":[124],"evaluated":[125],"experiments":[128],"significant":[131],"noticed":[137],"increasing":[139],"from":[142],"1$\\mu":[143],"s$to":[144],"4$\\mu":[145],"s$.":[146],"difference":[148],"during":[160],"presented":[164],"comparative":[167],"study.":[168],"becomes":[171],"2.86":[172],"times":[173],"lower":[174],"replacing":[176],"with":[179,201],"MOSFETs":[181],"same":[184],"frequency":[185],"range.":[186],"All":[187],"results":[189],"are":[190],"experimentally":[191],"validated":[192],"4.2":[195],"kW":[196],"prototype":[197],"isolated":[199],"DABSRC":[200],"600$V$DC":[203],"bus.":[204]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":2}],"updated_date":"2026-10-05T09:50:58.205359","created_date":"2023-08-04T00:00:00"}