{"id":"https://openalex.org/W4385077397","doi":"https://doi.org/10.1088/1674-4926/44/7/072801","title":"Tunneling via surface dislocation in W/\u03b2-Ga2O3 Schottky barrier diodes","display_name":"Tunneling via surface dislocation in W/\u03b2-Ga2O3 Schottky barrier diodes","publication_year":2023,"publication_date":"2023-07-01","ids":{"openalex":"https://openalex.org/W4385077397","doi":"https://doi.org/10.1088/1674-4926/44/7/072801"},"language":"en","primary_location":{"id":"doi:10.1088/1674-4926/44/7/072801","doi":"https://doi.org/10.1088/1674-4926/44/7/072801","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/44/7/072801","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084633258","display_name":"Madani Labed","orcid":"https://orcid.org/0000-0003-2608-4452","observed_orcids":["https://orcid.org/0000-0003-2608-4452"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Madani Labed","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017286972","display_name":"Ji Young Min","orcid":"https://orcid.org/0000-0002-2939-4547","observed_orcids":["https://orcid.org/0000-0002-2939-4547"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ji Young Min","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006439968","display_name":"Amina Benslim","orcid":"https://orcid.org/0009-0009-2048-4747","observed_orcids":["https://orcid.org/0009-0009-2048-4747"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Amina Ben Slim","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008662236","display_name":"Nouredine Sengouga","orcid":"https://orcid.org/0000-0002-4437-0869","observed_orcids":["https://orcid.org/0000-0002-4437-0869"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Nouredine Sengouga","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053718974","display_name":"Chowdam Venkata Prasad","orcid":"https://orcid.org/0000-0002-2603-3332","observed_orcids":["https://orcid.org/0000-0002-2603-3332"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chowdam Venkata Prasad","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081493437","display_name":"Sinsu Kyoung","orcid":"https://orcid.org/0000-0003-1350-9183","observed_orcids":["https://orcid.org/0000-0003-1350-9183","https://orcid.org/0009-0000-5552-6606"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sinsu Kyoung","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5018969109","display_name":"You Seung Rim","orcid":"https://orcid.org/0000-0002-4281-8818","observed_orcids":["https://orcid.org/0000-0002-4281-8818"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"You Seung Rim","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2450,"currency":"USD","value_usd":2450},"apc_paid":null,"fwci":0.3012,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.34308647,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"44","issue":"7","first_page":"072801","last_page":"072801"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.8398000001907349,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.8398000001907349,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.15600000321865082,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.9330000281333923},{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.902999997138977},{"id":"https://openalex.org/keywords/tungsten-contacts","display_name":"tungsten contacts","score":0.7889999747276306},{"id":"https://openalex.org/keywords/surface-dislocations","display_name":"surface dislocations","score":0.722000002861023},{"id":"https://openalex.org/keywords/tunneling-current","display_name":"tunneling current","score":0.7940000295639038},{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.8949999809265137},{"id":"https://openalex.org/keywords/ideality-factor","display_name":"ideality factor","score":0.9800000190734863},{"id":"https://openalex.org/keywords/dislocation-density","display_name":"dislocation density","score":0.7429999709129333},{"id":"https://openalex.org/keywords/series-resistance","display_name":"series resistance","score":0.6679999828338623},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.8989999890327454},{"id":"https://openalex.org/keywords/low-temperature-operation","display_name":"low-temperature operation","score":0.7160000205039978}],"concepts":[{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.8242886066436768},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7960002422332764},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.7167834639549255},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.6767024993896484},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6619335412979126},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.609207272529602},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5751336812973022},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3693612813949585},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.07804441452026367},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0769510269165039}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/1674-4926/44/7/072801","doi":"https://doi.org/10.1088/1674-4926/44/7/072801","is_oa":false,"landing_page_url":"https://doi.org/10.1088/1674-4926/44/7/072801","pdf_url":null,"source":{"id":"https://openalex.org/S52834336","display_name":"Journal of Semiconductors","issn_l":"1674-4926","issn":["1674-4926","2058-6140"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","poland-40","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Semiconductors","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1594905984","https://openalex.org/W1840781947","https://openalex.org/W1989812112","https://openalex.org/W1990441446","https://openalex.org/W2017054571","https://openalex.org/W2036720971","https://openalex.org/W2153683562","https://openalex.org/W2157101372","https://openalex.org/W2344472341","https://openalex.org/W2462896629","https://openalex.org/W2463404232","https://openalex.org/W2551166540","https://openalex.org/W2610840581","https://openalex.org/W2616714290","https://openalex.org/W2741004954","https://openalex.org/W2787821835","https://openalex.org/W2891624372","https://openalex.org/W2902575866","https://openalex.org/W2909242676","https://openalex.org/W2921636520","https://openalex.org/W2945175890","https://openalex.org/W2969229885","https://openalex.org/W2975453473","https://openalex.org/W2979171019","https://openalex.org/W2980427103","https://openalex.org/W2982368646","https://openalex.org/W3005083853","https://openalex.org/W3110170625","https://openalex.org/W3193681706","https://openalex.org/W3206752156","https://openalex.org/W4205816089"],"related_works":["https://openalex.org/W4400112723","https://openalex.org/W3016536821","https://openalex.org/W3171252670","https://openalex.org/W1893877473","https://openalex.org/W2559055532","https://openalex.org/W2909242676","https://openalex.org/W6990168830","https://openalex.org/W2143851481","https://openalex.org/W4402738133","https://openalex.org/W3032292573"],"abstract_inverted_index":{"Abstract":[0],"In":[1],"this":[2],"work,":[3],"W/\u03b2-Ga2O3":[4],"Schottky":[5,23],"barrier":[6,24],"diodes,":[7],"prepared":[8],"using":[9],"a":[10],"confined":[11],"magnetic":[12],"field-based":[13],"sputtering":[14],"method,":[15],"were":[16],"analyzed":[17],"at":[18,39,55],"different":[19],"operation":[20,76],"temperatures.":[21],"Firstly,":[22],"height":[25],"increased":[26],"with":[27,46,74],"increasing":[28,47,75],"temperature":[29,48],"from":[30,84],"100":[31,56],"to":[32,64],"300":[33],"K":[34],"and":[35,49,71],"reached":[36],"1.03":[37],"eV":[38],"room":[40],"temperature.":[41,77],"The":[42],"ideality":[43],"factor":[44],"decreased":[45,73],"it":[50],"was":[51,62,82,92],"higher":[52],"than":[53],"2":[54],"K.":[57],"This":[58],"apparent":[59],"high":[60,89],"value":[61],"related":[63],"the":[65,69,79,85,96,103],"tunneling":[66,86,99],"effect.":[67],"Secondly,":[68],"series":[70],"on-resistances":[72],"Finally,":[78],"interfacial":[80],"dislocation":[81,90,101],"extracted":[83],"current.":[87],"A":[88],"density":[91],"found,":[93],"which":[94],"indicates":[95],"domination":[97],"of":[98],"through":[100],"in":[102,111],"transport":[104],"mechanism.":[105],"These":[106],"findings":[107],"are":[108],"evidently":[109],"helpful":[110],"designing":[112],"better":[113],"performance":[114],"devices.":[115]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2023-07-23T00:00:00"}