{"id":"https://openalex.org/W4381485998","doi":"https://doi.org/10.1016/j.jallcom.2023.171096","title":"Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices","display_name":"Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices","publication_year":2023,"publication_date":"2023-06-21","ids":{"openalex":"https://openalex.org/W4381485998","doi":"https://doi.org/10.1016/j.jallcom.2023.171096"},"language":"en","primary_location":{"id":"doi:10.1016/j.jallcom.2023.171096","doi":"https://doi.org/10.1016/j.jallcom.2023.171096","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jallcom.2023.171096","pdf_url":null,"source":{"id":"https://openalex.org/S67716761","display_name":"Journal of Alloys and Compounds","issn_l":"0925-8388","issn":["0925-8388","1873-4669"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Alloys and Compounds","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114195974","display_name":"Hyeonseung Ji","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyeonseung Ji","raw_affiliation_strings":["Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea","institution_ids":["https://openalex.org/I205490536"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101939463","display_name":"Yoon\u2010Seok Lee","orcid":"https://orcid.org/0000-0002-4401-9489","observed_orcids":["https://orcid.org/0000-0002-4401-9489"]},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yoonseok Lee","raw_affiliation_strings":["Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea","institution_ids":["https://openalex.org/I205490536"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006199247","display_name":"Jungang Heo","orcid":"https://orcid.org/0009-0009-5236-5216","observed_orcids":["https://orcid.org/0009-0009-5236-5216"]},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jungang Heo","raw_affiliation_strings":["Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea","institution_ids":["https://openalex.org/I205490536"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100647604","display_name":"Sungjun Kim","orcid":"https://orcid.org/0000-0002-9873-2474","observed_orcids":["https://orcid.org/0000-0002-9873-2474","https://orcid.org/0000-0002-4834-6882","https://orcid.org/0000-0002-2734-5864"]},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sungjun Kim","raw_affiliation_strings":["Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, the Republic of Korea","institution_ids":["https://openalex.org/I205490536"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5100647604"],"corresponding_institution_ids":["https://openalex.org/I205490536"],"apc_list":{"value":3410,"currency":"USD","value_usd":3410},"apc_paid":null,"fwci":1.4253,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.79710586,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":"962","issue":null,"first_page":"171096","last_page":"171096"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"resistive random access memory","score":0.8610000014305115},{"id":"https://openalex.org/keywords/resistive-switching","display_name":"resistive switching","score":0.9399999976158142},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.6809999942779541},{"id":"https://openalex.org/keywords/tin-electrodes","display_name":"TiN electrodes","score":0.6209999918937683},{"id":"https://openalex.org/keywords/endurance","display_name":"endurance","score":0.6439999938011169},{"id":"https://openalex.org/keywords/retention","display_name":"retention","score":0.7990000247955322},{"id":"https://openalex.org/keywords/multi-level-cell","display_name":"multi-level cell","score":0.9729999899864197},{"id":"https://openalex.org/keywords/potentiation","display_name":"potentiation","score":0.8679999709129333},{"id":"https://openalex.org/keywords/depression","display_name":"depression","score":0.9480000138282776},{"id":"https://openalex.org/keywords/neuromorphic-hardware","display_name":"neuromorphic hardware","score":0.9430000185966492},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.7639999985694885}],"concepts":[{"id":"https://openalex.org/C192157962","wikidata":"https://www.wikidata.org/wiki/Q4087243","display_name":"Bilayer","level":3,"score":0.7768896818161011},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.6976277828216553},{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.6423391103744507},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6108958125114441},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5369522571563721},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5311428904533386},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.4929342269897461},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.47913357615470886},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3246883749961853},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.23748525977134705},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.11850050091743469},{"id":"https://openalex.org/C41625074","wikidata":"https://www.wikidata.org/wiki/Q176088","display_name":"Membrane","level":2,"score":0.10113096237182617},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.jallcom.2023.171096","doi":"https://doi.org/10.1016/j.jallcom.2023.171096","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.jallcom.2023.171096","pdf_url":null,"source":{"id":"https://openalex.org/S67716761","display_name":"Journal of Alloys and Compounds","issn_l":"0925-8388","issn":["0925-8388","1873-4669"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Alloys and Compounds","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2193524624","display_name":null,"funder_award_id":"20224000000020","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G3430150243","display_name":null,"funder_award_id":"2021R1C1C1004422","funder_id":"https://openalex.org/F4320322030","funder_display_name":"Ministry of Science, ICT and Future Planning"}],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322030","display_name":"Ministry of Science, ICT and Future Planning","ror":"https://ror.org/032e49973"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":59,"referenced_works":["https://openalex.org/W1987373196","https://openalex.org/W1987420480","https://openalex.org/W2010221926","https://openalex.org/W2011746392","https://openalex.org/W2011912171","https://openalex.org/W2018774711","https://openalex.org/W2020445295","https://openalex.org/W2021415253","https://openalex.org/W2040270819","https://openalex.org/W2048936516","https://openalex.org/W2057707608","https://openalex.org/W2058760746","https://openalex.org/W2060501200","https://openalex.org/W2074357625","https://openalex.org/W2076979810","https://openalex.org/W2083923553","https://openalex.org/W2087269757","https://openalex.org/W2101264381","https://openalex.org/W2138057160","https://openalex.org/W2148178884","https://openalex.org/W2211719853","https://openalex.org/W2289174982","https://openalex.org/W2597468417","https://openalex.org/W2609470247","https://openalex.org/W2769029411","https://openalex.org/W2795199568","https://openalex.org/W2883182488","https://openalex.org/W2884576417","https://openalex.org/W2886880538","https://openalex.org/W2899700708","https://openalex.org/W3011194953","https://openalex.org/W3020952717","https://openalex.org/W3038537572","https://openalex.org/W3046886437","https://openalex.org/W3111992249","https://openalex.org/W3119821707","https://openalex.org/W3127753378","https://openalex.org/W3135947444","https://openalex.org/W3175956227","https://openalex.org/W3179750062","https://openalex.org/W3202216191","https://openalex.org/W3209578206","https://openalex.org/W4210718832","https://openalex.org/W4282046294","https://openalex.org/W4282552482","https://openalex.org/W4282984294","https://openalex.org/W4283582294","https://openalex.org/W4284882315","https://openalex.org/W4286634769","https://openalex.org/W4292121737","https://openalex.org/W4306194433","https://openalex.org/W4308120366","https://openalex.org/W4313837444","https://openalex.org/W4320525867","https://openalex.org/W4324378493","https://openalex.org/W4361286998","https://openalex.org/W4362509634","https://openalex.org/W4362578843","https://openalex.org/W4376618309"],"related_works":["https://openalex.org/W4388489388","https://openalex.org/W4414827097","https://openalex.org/W4306177075","https://openalex.org/W2070894707","https://openalex.org/W4291493166","https://openalex.org/W2884576417","https://openalex.org/W4236428013","https://openalex.org/W2050523653","https://openalex.org/W2051065410","https://openalex.org/W7165687393"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":10}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2023-06-22T00:00:00"}