{"id":"https://openalex.org/W4379986364","doi":"https://doi.org/10.33545/26648776.2019.v1.i4a.16","title":"Comparison and analysis between complemantory metallic semiconductor based three satge ring Osillator and carbon nanotube based three stage ring oscillator with Lactor technique and without Lactor technique","display_name":"Comparison and analysis between complemantory metallic semiconductor based three satge ring Osillator and carbon nanotube based three stage ring oscillator with Lactor technique and without Lactor technique","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W4379986364","doi":"https://doi.org/10.33545/26648776.2019.v1.i4a.16"},"language":"en","primary_location":{"id":"doi:10.33545/26648776.2019.v1.i4a.16","doi":"https://doi.org/10.33545/26648776.2019.v1.i4a.16","is_oa":true,"landing_page_url":"http://dx.doi.org/10.33545/26648776.2019.v1.i4a.16","pdf_url":"https://www.engineeringpaper.net/archives/2019/vol1issue4/PartA/1-4-11-237.pdf","source":{"id":"https://openalex.org/S4387285454","display_name":"International Journal of Research in Engineering","issn_l":"2664-8776","issn":["2664-8776","2664-8784"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Research in Engineering","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://www.engineeringpaper.net/archives/2019/vol1issue4/PartA/1-4-11-237.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043994524","display_name":"Ravinesh Bhadoriya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I191366470","display_name":"ITM University","ror":"https://ror.org/004pc5924","country_code":"IN","type":"education","lineage":["https://openalex.org/I191366470"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ravinesh Bhadoriya","raw_affiliation_strings":["Research scholar: M. Tech (VLSI) , ITM GOI Gwalior , Madhya Pradesh , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research scholar: M. Tech (VLSI) , ITM GOI Gwalior , Madhya Pradesh , India","institution_ids":["https://openalex.org/I191366470"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014517431","display_name":"Nikhil Saxena","orcid":"https://orcid.org/0000-0002-6240-4719","observed_orcids":["https://orcid.org/0000-0002-6240-4719"]},"institutions":[{"id":"https://openalex.org/I191366470","display_name":"ITM University","ror":"https://ror.org/004pc5924","country_code":"IN","type":"education","lineage":["https://openalex.org/I191366470"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Nikhil Saxena","raw_affiliation_strings":["Assistant Professor: EC Department , ITM GOI Gwalior , Madhya Pradesh , India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Assistant Professor: EC Department , ITM GOI Gwalior , Madhya Pradesh , India","institution_ids":["https://openalex.org/I191366470"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I191366470"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":0,"citation_normalized_percentile":{"value":0.2682507,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"1","issue":"4","first_page":"01","last_page":"04"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7602999806404114,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.7602999806404114,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.15029999613761902,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.018699999898672104,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ring-oscillator","display_name":"ring oscillator","score":0.7689999938011169},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistors","display_name":"carbon nanotube field-effect transistors","score":0.9399999976158142},{"id":"https://openalex.org/keywords/cmos-comparison","display_name":"CMOS comparison","score":0.6620000004768372},{"id":"https://openalex.org/keywords/leakage-current-reduction","display_name":"leakage current reduction","score":0.8270000219345093},{"id":"https://openalex.org/keywords/leakage-power","display_name":"leakage power","score":0.6489999890327454},{"id":"https://openalex.org/keywords/nanoelectronics","display_name":"nanoelectronics","score":0.6600000262260437},{"id":"https://openalex.org/keywords/low-power-circuits","display_name":"low-power circuits","score":0.6000000238418579}],"concepts":[{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.8695710897445679},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7568075060844421},{"id":"https://openalex.org/C141400236","wikidata":"https://www.wikidata.org/wiki/Q1479544","display_name":"Nanoelectronics","level":2,"score":0.6441798210144043},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6238117814064026},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6163751482963562},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.5994006395339966},{"id":"https://openalex.org/C138331895","wikidata":"https://www.wikidata.org/wiki/Q11650","display_name":"Electronics","level":2,"score":0.5739892721176147},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5668879151344299},{"id":"https://openalex.org/C104111718","wikidata":"https://www.wikidata.org/wiki/Q2153973","display_name":"Ring oscillator","level":3,"score":0.5443820357322693},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5180847644805908},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.5154610276222229},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4403463304042816},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.43484634160995483},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4214722812175751},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.373055100440979},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.30119022727012634},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.27644726634025574},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1704462170600891},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11563846468925476},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.33545/26648776.2019.v1.i4a.16","doi":"https://doi.org/10.33545/26648776.2019.v1.i4a.16","is_oa":true,"landing_page_url":"http://dx.doi.org/10.33545/26648776.2019.v1.i4a.16","pdf_url":"https://www.engineeringpaper.net/archives/2019/vol1issue4/PartA/1-4-11-237.pdf","source":{"id":"https://openalex.org/S4387285454","display_name":"International Journal of Research in Engineering","issn_l":"2664-8776","issn":["2664-8776","2664-8784"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Research in Engineering","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.33545/26648776.2019.v1.i4a.16","doi":"https://doi.org/10.33545/26648776.2019.v1.i4a.16","is_oa":true,"landing_page_url":"http://dx.doi.org/10.33545/26648776.2019.v1.i4a.16","pdf_url":"https://www.engineeringpaper.net/archives/2019/vol1issue4/PartA/1-4-11-237.pdf","source":{"id":"https://openalex.org/S4387285454","display_name":"International Journal of Research in Engineering","issn_l":"2664-8776","issn":["2664-8776","2664-8784"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"International Journal of Research in Engineering","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4379986364.pdf","grobid_xml":"https://content.openalex.org/works/W4379986364.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2566866589","https://openalex.org/W2971234302","https://openalex.org/W4376141039","https://openalex.org/W3166177753","https://openalex.org/W2071746742","https://openalex.org/W2181874606","https://openalex.org/W2896898499","https://openalex.org/W2069870201","https://openalex.org/W7096005916","https://openalex.org/W1964692216"],"abstract_inverted_index":{"Nanoscale":[0],"device":[1,67],"is":[2,13,53,62,69,110,114],"an":[3],"optimistic":[4],"solution":[5],"to":[6,89,97],"replace":[7],"complementary":[8],"metallic":[9],"oxide":[10],"semiconductor":[11,24],"which":[12,68,113],"also":[14],"known":[15],"as":[16,55,133],"CMOS":[17,46],"technology":[18,48,52,109,112],"for":[19,31,71,116],"future":[20],"nano-electronics.":[21],"Novel":[22],"nano-scale":[23],"devices":[25,34],"like":[26],"CNTFET":[27,50,108,129],"transistor":[28],"can":[29],"use":[30],"upcoming":[32],"nanoscale":[33,66],"because":[35],"of":[36,85,93,101,123,139],"the":[37,91,99,111,118],"magnificent":[38],"performance":[39,74],"and":[40,49,78,95,126],"accurate":[41],"results.":[42],"A":[43],"comparison":[44],"between":[45],"based":[47,51],"presented":[54],"per":[56],"their":[57,105],"several":[58],"parameters.":[59],"Carbon":[60],"nanotube":[61],"a":[63],"modern":[64],"promising":[65],"used":[70,115],"executing":[72],"better":[73,119],"with":[75],"low":[76],"power":[77,94,125],"dense":[79],"electronics":[80],"circuits.":[81],"The":[82],"major":[83],"concern":[84],"researchers":[86],"was":[87],"how":[88,96],"reduce":[90,98],"consumption":[92],"amount":[100],"leakage":[102,124,127],"current":[103],"in":[104,121,137,142],"proposed":[106],"work.":[107],"getting":[117],"results":[120],"term":[122],"current.":[128],"utilizes":[130],"single":[131],"CNT":[132],"its":[134],"channel":[135],"material":[136],"place":[138],"vast":[140],"silicon":[141],"MOSFET.":[143]},"counts_by_year":[],"updated_date":"2026-08-24T07:32:12.397491","created_date":"2023-06-10T00:00:00"}