{"id":"https://openalex.org/W4379745239","doi":"https://doi.org/10.1016/j.mtelec.2023.100042","title":"Investigation of Deep Defects and Their Effects on the Properties of NiO/\u0392- Ga2O3 Heterojuncion Diodes","display_name":"Investigation of Deep Defects and Their Effects on the Properties of NiO/\u0392- Ga2O3 Heterojuncion Diodes","publication_year":2022,"publication_date":"2022-01-01","ids":{"openalex":"https://openalex.org/W4379745239","doi":"https://doi.org/10.1016/j.mtelec.2023.100042"},"language":"en","primary_location":{"id":"doi:10.1016/j.mtelec.2023.100042","doi":"https://doi.org/10.1016/j.mtelec.2023.100042","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.mtelec.2023.100042","pdf_url":"https://ars.els-cdn.com/content/image/1-s2.0-S2772949423000189-ga1_lrg.jpg","source":{"id":"https://openalex.org/S4220651274","display_name":"Materials Today Electronics","issn_l":"2772-9494","issn":["2772-9494"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Today Electronics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref","datacite","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ars.els-cdn.com/content/image/1-s2.0-S2772949423000189-ga1_lrg.jpg","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5011007588","display_name":"Abdulaziz Almalki","orcid":"https://orcid.org/0000-0002-8122-561X","observed_orcids":["https://orcid.org/0000-0002-8122-561X"]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]},{"id":"https://openalex.org/I23075662","display_name":"Taibah University","ror":"https://ror.org/01xv1nn60","country_code":"SA","type":"education","lineage":["https://openalex.org/I23075662"]}],"countries":["GB","SA"],"is_corresponding":true,"raw_author_name":"Abdulaziz Almalki","raw_affiliation_strings":["Physics Department, Faculty of Science at Taibah University-Yanbu, King Khalid Rd. Al Amoedi, 46423, Yanbu El-Bahr, 51000, Saudi Arabia","School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK"],"raw_orcid":"https://orcid.org/0000-0002-8122-561X","affiliations":[{"raw_affiliation_string":"Physics Department, Faculty of Science at Taibah University-Yanbu, King Khalid Rd. Al Amoedi, 46423, Yanbu El-Bahr, 51000, Saudi Arabia","institution_ids":["https://openalex.org/I23075662"]},{"raw_affiliation_string":"School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK","institution_ids":["https://openalex.org/I142263535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084633258","display_name":"Madani Labed","orcid":"https://orcid.org/0000-0003-2608-4452","observed_orcids":["https://orcid.org/0000-0003-2608-4452"]},"institutions":[{"id":"https://openalex.org/I28777354","display_name":"Sejong University","ror":"https://ror.org/00aft1q37","country_code":"KR","type":"education","lineage":["https://openalex.org/I28777354"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Labed Madani","raw_affiliation_strings":["Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0003-2608-4452","affiliations":[{"raw_affiliation_string":"Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea","institution_ids":["https://openalex.org/I28777354"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008662236","display_name":"Nouredine Sengouga","orcid":"https://orcid.org/0000-0002-4437-0869","observed_orcids":["https://orcid.org/0000-0002-4437-0869"]},"institutions":[{"id":"https://openalex.org/I206961696","display_name":"University of Biskra","ror":"https://ror.org/05fr5y859","country_code":"DZ","type":"education","lineage":["https://openalex.org/I206961696"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Nouredine Sengouga","raw_affiliation_strings":["Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra 07000, Algeria"],"raw_orcid":"https://orcid.org/0000-0002-4437-0869","affiliations":[{"raw_affiliation_string":"Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra 07000, Algeria","institution_ids":["https://openalex.org/I206961696"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037341238","display_name":"Sultan  Saleh Alhassan","orcid":"https://orcid.org/0000-0002-0591-7358","observed_orcids":["https://orcid.org/0000-0002-0591-7358"]},"institutions":[{"id":"https://openalex.org/I199702508","display_name":"Jouf University","ror":"https://ror.org/02zsyt821","country_code":"SA","type":"education","lineage":["https://openalex.org/I199702508"]}],"countries":["SA"],"is_corresponding":false,"raw_author_name":"Sultan Alhassan","raw_affiliation_strings":["Physics Department, College of Science, Jouf University, P.O. Box:2014, Sakaka, Saudi Arabia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, College of Science, Jouf University, P.O. Box:2014, Sakaka, Saudi Arabia","institution_ids":["https://openalex.org/I199702508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081910521","display_name":"Saud Alotaibi","orcid":"https://orcid.org/0009-0003-5562-5577","observed_orcids":["https://orcid.org/0009-0003-5562-5577"]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]},{"id":"https://openalex.org/I206935292","display_name":"Shaqra University","ror":"https://ror.org/05hawb687","country_code":"SA","type":"education","lineage":["https://openalex.org/I206935292"]}],"countries":["GB","SA"],"is_corresponding":false,"raw_author_name":"Saud Alotaibi","raw_affiliation_strings":["Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911, Saudi Aribia","School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, Faculty of Science and Humanities in Ad-Dawadmi, Shaqra University, 11911, Saudi Aribia","institution_ids":["https://openalex.org/I206935292"]},{"raw_affiliation_string":"School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK","institution_ids":["https://openalex.org/I142263535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084867513","display_name":"Amra Ali Alhassni","orcid":"https://orcid.org/0000-0002-1792-6112","observed_orcids":["https://orcid.org/0000-0002-1792-6112"]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]},{"id":"https://openalex.org/I52207611","display_name":"Al Baha University","ror":"https://ror.org/0403jak37","country_code":"SA","type":"education","lineage":["https://openalex.org/I52207611"]}],"countries":["GB","SA"],"is_corresponding":false,"raw_author_name":"Amra Alhassni","raw_affiliation_strings":["Physics Department, Al-Baha University, 65931, Al-Makhwah, Saudi Arabia","School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, Al-Baha University, 65931, Al-Makhwah, Saudi Arabia","institution_ids":["https://openalex.org/I52207611"]},{"raw_affiliation_string":"School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK","institution_ids":["https://openalex.org/I142263535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056645693","display_name":"Amjad A. Almunyif","orcid":"https://orcid.org/0000-0001-6659-8517","observed_orcids":["https://orcid.org/0000-0001-6659-8517"]},"institutions":[{"id":"https://openalex.org/I106778892","display_name":"Princess Nourah bint Abdulrahman University","ror":"https://ror.org/05b0cyh02","country_code":"SA","type":"education","lineage":["https://openalex.org/I106778892"]},{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]}],"countries":["GB","SA"],"is_corresponding":false,"raw_author_name":"Amjad Almunyif","raw_affiliation_strings":["Department of physics, College of sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh 11671, Saudi Aribia","School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of physics, College of sciences, Princess Nourah bint Abdulrahman University (PNU), Riyadh 11671, Saudi Aribia","institution_ids":["https://openalex.org/I106778892"]},{"raw_affiliation_string":"School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK","institution_ids":["https://openalex.org/I142263535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067792585","display_name":"Jasbinder Chauhan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Jasbinder S. Chauhan","raw_affiliation_strings":["School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK","institution_ids":["https://openalex.org/I142263535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050765639","display_name":"Mohamed Henini","orcid":"https://orcid.org/0000-0001-9414-8492","observed_orcids":["https://orcid.org/0000-0001-9414-8492"]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Mohamed Henini","raw_affiliation_strings":["School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK"],"raw_orcid":"https://orcid.org/0000-0001-9414-8492","affiliations":[{"raw_affiliation_string":"School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK","institution_ids":["https://openalex.org/I142263535"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008387573","display_name":"Helder Vin\u00edcius Avan\u00e7o Galeti","orcid":"https://orcid.org/0000-0002-5217-8367","observed_orcids":["https://orcid.org/0000-0002-5217-8367"]},"institutions":[{"id":"https://openalex.org/I177909021","display_name":"Universidade Federal de S\u00e3o Carlos","ror":"https://ror.org/00qdc6m37","country_code":"BR","type":"education","lineage":["https://openalex.org/I177909021"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Helder Vinicius Avan\u00e7o Galeti","raw_affiliation_strings":["Departamento de Engenharia El\u00e9trica, Universidade Federal de S\u00e3o Carlos (UFSCAR), 13560-905 S\u00e3o Carlos, SP, Brazil"],"raw_orcid":"https://orcid.org/0000-0002-5217-8367","affiliations":[{"raw_affiliation_string":"Departamento de Engenharia El\u00e9trica, Universidade Federal de S\u00e3o Carlos (UFSCAR), 13560-905 S\u00e3o Carlos, SP, Brazil","institution_ids":["https://openalex.org/I177909021"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090221346","display_name":"Y. Galv\u00e3o Gobato","orcid":"https://orcid.org/0000-0003-2251-0426","observed_orcids":["https://orcid.org/0000-0003-2251-0426"]},"institutions":[{"id":"https://openalex.org/I177909021","display_name":"Universidade Federal de S\u00e3o Carlos","ror":"https://ror.org/00qdc6m37","country_code":"BR","type":"education","lineage":["https://openalex.org/I177909021"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Yara Galv\u00e3o Gobato","raw_affiliation_strings":["Departamento de F\u00edsica, Universidade Federal de S\u00e3o Carlos (UFSCAR), 13560-905 S\u00e3o Carlos, SP, Brazil, Universidade Federal e S\u00e3o Carlos"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de F\u00edsica, Universidade Federal de S\u00e3o Carlos (UFSCAR), 13560-905 S\u00e3o Carlos, SP, Brazil, Universidade Federal e S\u00e3o Carlos","institution_ids":["https://openalex.org/I177909021"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001125654","display_name":"Marcio Peron Franco de Godoy","orcid":"https://orcid.org/0000-0002-8376-8642","observed_orcids":["https://orcid.org/0000-0002-8376-8642"]},"institutions":[{"id":"https://openalex.org/I177909021","display_name":"Universidade Federal de S\u00e3o Carlos","ror":"https://ror.org/00qdc6m37","country_code":"BR","type":"education","lineage":["https://openalex.org/I177909021"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Marcio Peron Franco de Godoy","raw_affiliation_strings":["Departamento de F\u00edsica, Universidade Federal de S\u00e3o Carlos (UFSCAR), 13560-905 S\u00e3o Carlos, SP, Brazil, Universidade Federal e S\u00e3o Carlos"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de F\u00edsica, Universidade Federal de S\u00e3o Carlos (UFSCAR), 13560-905 S\u00e3o Carlos, SP, Brazil, Universidade Federal e S\u00e3o Carlos","institution_ids":["https://openalex.org/I177909021"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030224491","display_name":"Marcelo B. Andrade","orcid":"https://orcid.org/0000-0001-9137-8831","observed_orcids":["https://orcid.org/0000-0001-9137-8831"]},"institutions":[{"id":"https://openalex.org/I10824318","display_name":"Universidade Federal de Ouro Preto","ror":"https://ror.org/056s65p46","country_code":"BR","type":"education","lineage":["https://openalex.org/I10824318"]},{"id":"https://openalex.org/I17974374","display_name":"Universidade de S\u00e3o Paulo","ror":"https://ror.org/036rp1748","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374"]},{"id":"https://openalex.org/I4405267372","display_name":"Instituto de F\u00edsica de S\u00e3o Carlos","ror":"https://ror.org/02f1crb75","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Marcelo B. Andrade","raw_affiliation_strings":["Physics Department, Federal University of Ouro Preto, Ouro Preto, MG, 35400-000, Brazil","S\u00e3o Carlos Institute of Physics, University of S\u00e3o Paulo, PO Box 369, S\u00e3o Carlos, SP 13560-970, Brazil"],"raw_orcid":"https://orcid.org/0000-0001-9137-8831","affiliations":[{"raw_affiliation_string":"Physics Department, Federal University of Ouro Preto, Ouro Preto, MG, 35400-000, Brazil","institution_ids":["https://openalex.org/I10824318"]},{"raw_affiliation_string":"S\u00e3o Carlos Institute of Physics, University of S\u00e3o Paulo, PO Box 369, S\u00e3o Carlos, SP 13560-970, Brazil","institution_ids":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033685085","display_name":"S\u00e9rgio Paulo Amaral Souto","orcid":"https://orcid.org/0000-0002-6317-4062","observed_orcids":["https://orcid.org/0000-0002-6317-4062"]},"institutions":[{"id":"https://openalex.org/I17974374","display_name":"Universidade de S\u00e3o Paulo","ror":"https://ror.org/036rp1748","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"S\u00e9rgio Souto","raw_affiliation_strings":["Departamento de Ci\u00eancias B\u00e1sicas\u2013Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de S\u00e3o Paulo, CEP 13635-900 Pirassununga, SP, Brazil"],"raw_orcid":"https://orcid.org/0000-0002-6317-4062","affiliations":[{"raw_affiliation_string":"Departamento de Ci\u00eancias B\u00e1sicas\u2013Faculdade de Zootecnia e Engenharia de Alimentos, Universidade de S\u00e3o Paulo, CEP 13635-900 Pirassununga, SP, Brazil","institution_ids":["https://openalex.org/I17974374"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077506146","display_name":"Hong Yu Zhou","orcid":"https://orcid.org/0000-0002-0741-7568","observed_orcids":["https://orcid.org/0000-0002-0741-7568"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hong Zhou","raw_affiliation_strings":["School of Microelectronics, Xidian University, Xi'an, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100736478","display_name":"Boyan Wang","orcid":"https://orcid.org/0000-0001-9986-835X","observed_orcids":["https://orcid.org/0000-0001-9986-835X"]},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Boyan Wang","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101652385","display_name":"Ming Xiao","orcid":"https://orcid.org/0000-0001-9072-6371","observed_orcids":["https://orcid.org/0000-0001-9072-6371"]},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ming Xiao","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085050895","display_name":"Yuan Qin","orcid":"https://orcid.org/0000-0002-4691-3097","observed_orcids":["https://orcid.org/0000-0002-4691-3097"]},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuan Qin","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA"],"raw_orcid":"https://orcid.org/0000-0002-4691-3097","affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA","institution_ids":["https://openalex.org/I859038795"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089728227","display_name":"Yuhao Zhang","orcid":"https://orcid.org/0000-0001-6350-4861","observed_orcids":["https://orcid.org/0000-0001-6350-4861","https://orcid.org/0000-0002-2849-5653"]},"institutions":[{"id":"https://openalex.org/I859038795","display_name":"Virginia Tech","ror":"https://ror.org/02smfhw86","country_code":"US","type":"education","lineage":["https://openalex.org/I859038795"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yuhao Zhang","raw_affiliation_strings":["Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, 24060, USA","institution_ids":["https://openalex.org/I859038795"]}]}],"institutions":[],"countries_distinct_count":7,"institutions_distinct_count":14,"corresponding_author_ids":["https://openalex.org/A5011007588"],"corresponding_institution_ids":["https://openalex.org/I142263535","https://openalex.org/I23075662"],"apc_list":{"value":2860,"currency":"USD","value_usd":2860},"apc_paid":{"value":2860,"currency":"USD","value_usd":2860},"fwci":0.5721,"has_fulltext":true,"cited_by_count":15,"citation_normalized_percentile":{"value":0.55437474,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"4","issue":null,"first_page":"100042","last_page":"100042"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/deep-level-defects","display_name":"deep levels","score":0.5759999752044678},{"id":"https://openalex.org/keywords/rapid-thermal-annealing","display_name":"rapid thermal annealing","score":0.9319999814033508},{"id":"https://openalex.org/keywords/gallium-vacancies","display_name":"gallium vacancies","score":0.652999997138977},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.9990000128746033},{"id":"https://openalex.org/keywords/electron-traps","display_name":"electron traps","score":0.7329999804496765},{"id":"https://openalex.org/keywords/ideality-factor","display_name":"ideality factor","score":0.75},{"id":"https://openalex.org/keywords/barrier-height","display_name":"barrier height","score":0.9269999861717224},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.7749999761581421},{"id":"https://openalex.org/keywords/deep-level-transient-spectroscopy","display_name":"deep level transient spectroscopy","score":0.8130000233650208},{"id":"https://openalex.org/keywords/silvaco-tcad-simulation","display_name":"Silvaco TCAD simulation","score":0.8610000014305115},{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.6000000238418579}],"concepts":[{"id":"https://openalex.org/C2780080961","wikidata":"https://www.wikidata.org/wiki/Q176282","display_name":"Deep-level transient spectroscopy","level":3,"score":0.7725304365158081},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.734786868095398},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.6291975975036621},{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.6038362383842468},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5003046989440918},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.48234790563583374},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4776840806007385},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.4328610897064209},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.431438684463501},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4219769835472107},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.28954803943634033},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.17476826906204224},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.13513141870498657},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0}],"mesh":[],"locations_count":8,"locations":[{"id":"doi:10.1016/j.mtelec.2023.100042","doi":"https://doi.org/10.1016/j.mtelec.2023.100042","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.mtelec.2023.100042","pdf_url":"https://ars.els-cdn.com/content/image/1-s2.0-S2772949423000189-ga1_lrg.jpg","source":{"id":"https://openalex.org/S4220651274","display_name":"Materials Today Electronics","issn_l":"2772-9494","issn":["2772-9494"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Today Electronics","raw_type":"journal-article"},{"id":"doi:10.2139/ssrn.4241863","doi":"https://doi.org/10.2139/ssrn.4241863","is_oa":true,"landing_page_url":"https://doi.org/10.2139/ssrn.4241863","pdf_url":null,"source":{"id":"https://openalex.org/S4210172589","display_name":"SSRN Electronic Journal","issn_l":"1556-5068","issn":["1556-5068"],"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1318003438","host_organization_name":"RELX Group (Netherlands)","host_organization_lineage":["https://openalex.org/I1318003438"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SSRN Electronic Journal","raw_type":"journal-article"},{"id":"pmh:oai:https://nottingham-repository.worktribe.com/:21646469","doi":null,"is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.mtelec.2023.100042","pdf_url":null,"source":{"id":"https://openalex.org/S4306402483","display_name":"Repository@Nottingham (University of Nottingham)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I142263535","host_organization_name":"University of Nottingham","host_organization_lineage":["https://openalex.org/I142263535"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":null,"raw_type":"Journal Article"},{"id":"pmh:oai:nottingham-repository.worktribe.com:21646469","doi":null,"is_oa":true,"landing_page_url":"https://nottingham-repository.worktribe.com/file/21646469/1/Investigation%20of%20deep%20defects%20and%20their%20effects%20on%20the%20properties%20of%20NiO%2F%F0%9D%9B%BD-Ga2O3%20heterojuncion%20diodes","pdf_url":"https://nottingham-repository.worktribe.com/preview/21882173/1-s2.0-S2772949423000189-main.pdf","source":{"id":"https://openalex.org/S4306402483","display_name":"Repository@Nottingham (University of Nottingham)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I142263535","host_organization_name":"University of Nottingham","host_organization_lineage":["https://openalex.org/I142263535"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Journal Article"},{"id":"pmh:oai:repositorio.ufop.br:123456789/19393","doi":null,"is_oa":true,"landing_page_url":"https://www.repositorio.ufop.br/handle/123456789/19393","pdf_url":"https://www.repositorio.ufop.br/bitstreams/08e0519f-c909-4395-80f1-3894f919a6c7/download","source":{"id":"https://openalex.org/S4306402641","display_name":"LA Referencia (Red Federada de Repositorios Institucionales de Publicaciones Cient\u00edficas)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4383465926","host_organization_name":"LA Referencia","host_organization_lineage":["https://openalex.org/I4383465926"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"instacron:UFOP","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:hub.hku.hk:10722/352367","doi":null,"is_oa":false,"landing_page_url":"https://hub.hku.hk/handle/10722/352367","pdf_url":null,"source":{"id":"https://openalex.org/S4377196271","display_name":"The HKU Scholars Hub (University of Hong Kong)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I889458895","host_organization_name":"University of Hong Kong","host_organization_lineage":["https://openalex.org/I889458895"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"},{"id":"doi:10.60692/j3gdh-98c77","doi":"https://doi.org/10.60692/j3gdh-98c77","is_oa":true,"landing_page_url":"https://doi.org/10.60692/j3gdh-98c77","pdf_url":null,"source":{"id":"https://openalex.org/S7407051682","display_name":"Greater South Information System","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"},{"id":"doi:10.60692/nmsxw-g5b47","doi":"https://doi.org/10.60692/nmsxw-g5b47","is_oa":true,"landing_page_url":"https://doi.org/10.60692/nmsxw-g5b47","pdf_url":null,"source":{"id":"https://openalex.org/S7407051682","display_name":"Greater South Information System","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article-journal"}],"best_oa_location":{"id":"doi:10.1016/j.mtelec.2023.100042","doi":"https://doi.org/10.1016/j.mtelec.2023.100042","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.mtelec.2023.100042","pdf_url":"https://ars.els-cdn.com/content/image/1-s2.0-S2772949423000189-ga1_lrg.jpg","source":{"id":"https://openalex.org/S4220651274","display_name":"Materials Today Electronics","issn_l":"2772-9494","issn":["2772-9494"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Today Electronics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G295657101","display_name":null,"funder_award_id":"2019/","funder_id":"https://openalex.org/F4320320997","funder_display_name":"Funda\u00e7\u00e3o de Amparo \u00e0 Pesquisa do Estado de S\u00e3o Paulo"},{"id":"https://openalex.org/G3389158935","display_name":"2D devices for optoeletronics","funder_award_id":"19/23488-5","funder_id":"https://openalex.org/F4320320997","funder_display_name":"Funda\u00e7\u00e3o de Amparo \u00e0 Pesquisa do Estado de S\u00e3o Paulo"},{"id":"https://openalex.org/G4072382470","display_name":"ASCENT: Optically-Driven Ultra-Wide-Bandgap Power Electronics for Grid Energy Conversion","funder_award_id":"2230412","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"},{"id":"https://openalex.org/G6910340627","display_name":"BISMIDES semiconductor nanostructures and novel materials for mid infrared applications","funder_award_id":"19/07442-5","funder_id":"https://openalex.org/F4320320997","funder_display_name":"Funda\u00e7\u00e3o de Amparo \u00e0 Pesquisa do Estado de S\u00e3o Paulo"},{"id":"https://openalex.org/G7290705048","display_name":"High-Temperature Ultra-Wide Bandgap Gallium Oxide Power Module","funder_award_id":"2100504","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320320997","display_name":"Funda\u00e7\u00e3o de Amparo \u00e0 Pesquisa do Estado de S\u00e3o Paulo","ror":"https://ror.org/02ddkpn78"},{"id":"https://openalex.org/F4320321161","display_name":"Taibah University","ror":"https://ror.org/01xv1nn60"},{"id":"https://openalex.org/F4320322025","display_name":"Conselho Nacional de Desenvolvimento Cient\u00edfico e Tecnol\u00f3gico","ror":"https://ror.org/03swz6y49"},{"id":"https://openalex.org/F4320322904","display_name":"Financiadora de Estudos e Projetos","ror":"https://ror.org/030w99567"},{"id":"https://openalex.org/F4320337392","display_name":"Division of Electrical, Communications and Cyber Systems","ror":"https://ror.org/01krpsy48"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4379745239.pdf","grobid_xml":"https://content.openalex.org/works/W4379745239.grobid-xml"},"referenced_works_count":80,"referenced_works":["https://openalex.org/W1563217459","https://openalex.org/W1747727765","https://openalex.org/W1897362309","https://openalex.org/W1965112078","https://openalex.org/W1979098753","https://openalex.org/W1997913959","https://openalex.org/W1998810586","https://openalex.org/W2020431932","https://openalex.org/W2025827417","https://openalex.org/W2037778513","https://openalex.org/W2047627614","https://openalex.org/W2054284160","https://openalex.org/W2054730135","https://openalex.org/W2075429467","https://openalex.org/W2092665187","https://openalex.org/W2148816346","https://openalex.org/W2471265354","https://openalex.org/W2490765418","https://openalex.org/W2509570769","https://openalex.org/W2511099424","https://openalex.org/W2573448615","https://openalex.org/W2775776374","https://openalex.org/W2783046603","https://openalex.org/W2787821835","https://openalex.org/W2788394059","https://openalex.org/W2792197679","https://openalex.org/W2793579692","https://openalex.org/W2795125317","https://openalex.org/W2891624372","https://openalex.org/W2905220617","https://openalex.org/W2920079009","https://openalex.org/W2950375754","https://openalex.org/W2958500739","https://openalex.org/W2961563672","https://openalex.org/W2965466742","https://openalex.org/W2971402788","https://openalex.org/W2971575754","https://openalex.org/W2985913482","https://openalex.org/W2988598880","https://openalex.org/W2991422026","https://openalex.org/W2997369506","https://openalex.org/W3000408756","https://openalex.org/W3010867429","https://openalex.org/W3032292573","https://openalex.org/W3036058136","https://openalex.org/W3036516792","https://openalex.org/W3038038542","https://openalex.org/W3042514039","https://openalex.org/W3049619736","https://openalex.org/W3095145408","https://openalex.org/W3101090152","https://openalex.org/W3107170328","https://openalex.org/W3110170625","https://openalex.org/W3111655347","https://openalex.org/W3118537288","https://openalex.org/W3119476710","https://openalex.org/W3120940837","https://openalex.org/W3122996276","https://openalex.org/W3124130184","https://openalex.org/W3124474722","https://openalex.org/W3124883541","https://openalex.org/W3135295779","https://openalex.org/W3163500622","https://openalex.org/W3163805554","https://openalex.org/W3169265453","https://openalex.org/W3189599394","https://openalex.org/W3193681706","https://openalex.org/W3198076162","https://openalex.org/W3210047568","https://openalex.org/W4210718110","https://openalex.org/W4220892771","https://openalex.org/W4221127867","https://openalex.org/W4285285232","https://openalex.org/W4312909914","https://openalex.org/W4319663824","https://openalex.org/W6693110338","https://openalex.org/W6760762802","https://openalex.org/W6769868310","https://openalex.org/W6777527856","https://openalex.org/W6809468292"],"related_works":["https://openalex.org/W7160152481","https://openalex.org/W4394939104","https://openalex.org/W7203913579","https://openalex.org/W4313139452","https://openalex.org/W4389935289","https://openalex.org/W4393379745","https://openalex.org/W4402394492","https://openalex.org/W3082463280","https://openalex.org/W4395451547","https://openalex.org/W4210718110"],"abstract_inverted_index":{"In":[0,161],"this":[1],"study,":[2],"the":[3,11,51,59,76,83,89,98,106,117,149,158,182,185,193,197,226,236,239],"effect":[4,237],"of":[5,16,61,63,88,108,151,184,217,228,231,238],"rapid":[6],"thermal":[7],"annealing":[8],"(RTA)":[9],"on":[10],"electrical":[12],"and":[13,34,38,58,65,78,110,136,164,173,196,207,221,235,256],"optical":[14],"properties":[15,62],"NiO/":[17],"\u03b2-Ga2O3":[18,64,119,229],"heterojunction":[19,255],"diodes":[20],"was":[21,178,209],"investigated":[22],"using":[23],"capacitance-voltage,":[24],"current-voltage,":[25],"Deep":[26],"Level":[27],"Transient":[28],"Spectroscopy":[29],"(DLTS),":[30],"Laplace":[31],"DLTS,":[32],"photoluminescence":[33,86],"micro-Raman":[35],"spectroscopy":[36],"techniques,":[37],"SILVACO-TCAD":[39,177],"numerical":[40],"simulator.":[41],"The":[42,85,121,144],"NiO":[43,52,214],"is":[44,93,260],"designed":[45],"to":[46,102,180],"be":[47],"lowly-doped,":[48],"allowing":[49],"for":[50,157,264],"full":[53],"depletion":[54],"at":[55,133],"zero":[56],"bias":[57],"study":[60],"its":[66],"interface":[67],"with":[68,75,141],"NiO.":[69],"Micro-Raman":[70],"results":[71,80,249],"revealed":[72],"good":[73,203],"agreement":[74,204],"theoretical":[77],"experimental":[79],"reported":[81],"in":[82,105,116,170,192,246,253],"literature.":[84],"intensity":[87],"sample":[90,100,195],"after":[91],"RTA":[92,259],"five":[94],"times":[95],"higher":[96,137],"than":[97],"fresh":[99,142,171,194],"due":[101],"a":[103,129,212],"rise":[104],"density":[107,216],"gallium":[109],"oxygen":[111],"vacancies":[112],"(VGa":[113],"+":[114],"VO)":[115],"annealed":[118,126,174],"samples.":[120,143,160],"current-voltage":[122],"characteristics":[123],"showed":[124],"that":[125,148,258],"devices":[127],"exhibited":[128],"lower":[130],"ideality":[131],"factor":[132],"room":[134],"temperature":[135],"barrier":[138],"height":[139],"compared":[140],"DLTS":[145],"measurements":[146,208],"demonstrated":[147],"number":[150],"electrically":[152],"active":[153],"traps":[154,167],"were":[155,168],"different":[156],"two":[159],"particular,":[162],"three":[163],"one":[165],"electron":[166,187],"detected":[169,186],"samples":[172],"samples,":[175],"respectively.":[176],"used":[179],"understand":[181],"distribution":[183],"E2":[188,222],"trap":[189,223,244],"(Ec-0.15":[190],"eV)":[191],"dominant":[198],"transport":[199],"mechanisms.":[200],"A":[201],"fairly":[202],"between":[205],"simulation":[206],"achieved":[210],"considering":[211],"surface":[213,227],"acceptor":[215],"about":[218,232],"1\u00d71019":[219],"cm-3":[220],"depth":[224],"into":[225],"layer":[230],"0.220":[233],"\u00b5m":[234],"most":[240],"observed":[241],"Ec-0.75":[242],"eV":[243],"level":[245],"\u03b2-Ga2O3.":[247],"These":[248],"unveil":[250],"comprehensive":[251],"physics":[252],"NiO/\u03b2-Ga2O3":[254],"suggest":[257],"an":[261],"essential":[262],"process":[263],"realizing":[265],"high-performance":[266],"NiO/\u03b2-Ga2O3devices.":[267]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2023-06-08T00:00:00"}