{"id":"https://openalex.org/W43136607","doi":null,"title":"INFLUENCE OF GERMANIUM AND BORON DOPING ON STRUCTURAL AND PHYSICAL-MECHANICAL CHARACTERISTICS OF MONOCRYSTALLINE SILICON","display_name":"INFLUENCE OF GERMANIUM AND BORON DOPING ON STRUCTURAL AND PHYSICAL-MECHANICAL CHARACTERISTICS OF MONOCRYSTALLINE SILICON","publication_year":2014,"publication_date":"2014-01-01","ids":{"openalex":"https://openalex.org/W43136607","mag":"43136607"},"language":"en","primary_location":{"id":"mag:43136607","doi":null,"is_oa":false,"landing_page_url":"http://www.scientific-publications.net/en/article/1000176/","pdf_url":null,"source":{"id":"https://openalex.org/S2764504612","display_name":"Materials, methods & technologies","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Materials, methods & technologies","raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071053109","display_name":"Ia Kurashvili","orcid":"https://orcid.org/0000-0003-4175-1946","observed_orcids":["https://orcid.org/0000-0003-4175-1946"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ia Kurashvili","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023261251","display_name":"George Darsavelidze","orcid":"https://orcid.org/0000-0002-0574-8697","observed_orcids":["https://orcid.org/0000-0002-0574-8697"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G. Darsavelidze","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056861026","display_name":"Guram Bokuchava","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Guram Bokuchava","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108828387","display_name":"Iasha M. Tabatadze","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Iasha M. Tabatadze","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5002488324","display_name":"G. G. Chubinidze","orcid":"https://orcid.org/0000-0003-4639-9371","observed_orcids":["https://orcid.org/0000-0003-4639-9371"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"G. G. Chubinidze","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.00199949,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"8","issue":null,"first_page":"298","last_page":"302"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9868000149726868,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9868000149726868,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.007300000172108412,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/germanium-doping","display_name":"germanium doping","score":0.984000027179718},{"id":"https://openalex.org/keywords/boron-doping","display_name":"boron doping","score":1.0},{"id":"https://openalex.org/keywords/single-crystal-silicon","display_name":"monocrystalline silicon","score":0.75},{"id":"https://openalex.org/keywords/structural-properties","display_name":"structural properties","score":0.7269999980926514},{"id":"https://openalex.org/keywords/mechanical-properties","display_name":"mechanical properties","score":0.8360000252723694},{"id":"https://openalex.org/keywords/semiconductor-doping","display_name":"semiconductor doping","score":0.48899999260902405}],"concepts":[{"id":"https://openalex.org/C26953177","wikidata":"https://www.wikidata.org/wiki/Q3960534","display_name":"Monocrystalline silicon","level":3,"score":0.9420833587646484},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.7616878747940063},{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.709581732749939},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7085843086242676},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6736384034156799},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6235150098800659},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.5301821231842041},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38016414642333984},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13283595442771912},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.09846791625022888},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09686312079429626}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:43136607","doi":null,"is_oa":false,"landing_page_url":"http://www.scientific-publications.net/en/article/1000176/","pdf_url":null,"source":{"id":"https://openalex.org/S2764504612","display_name":"Materials, methods & technologies","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Materials, methods & technologies","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3147866515","https://openalex.org/W1963764237","https://openalex.org/W2517157146","https://openalex.org/W2061032724","https://openalex.org/W182416896","https://openalex.org/W3013490269","https://openalex.org/W2269344019","https://openalex.org/W2612904182","https://openalex.org/W3152518599","https://openalex.org/W4255093169"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}