{"id":"https://openalex.org/W4312856448","doi":"https://doi.org/10.1109/nap55339.2022.9934527","title":"Nitrogen Donor in Silicon: Towards Room Temperature Operation of Single Electron Tunneling Devices","display_name":"Nitrogen Donor in Silicon: Towards Room Temperature Operation of Single Electron Tunneling Devices","publication_year":2022,"publication_date":"2022-09-11","ids":{"openalex":"https://openalex.org/W4312856448","doi":"https://doi.org/10.1109/nap55339.2022.9934527"},"language":"en","primary_location":{"id":"doi:10.1109/nap55339.2022.9934527","doi":"https://doi.org/10.1109/nap55339.2022.9934527","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nap55339.2022.9934527","pdf_url":null,"source":{"id":"https://openalex.org/S4363608621","display_name":"IEEE International Conference Nanomaterials: Applications & Properties (NAP)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE 12th International Conference Nanomaterials: Applications & Properties (NAP)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009130006","display_name":"Pooja Yadav","orcid":"https://orcid.org/0000-0002-6451-8154","observed_orcids":["https://orcid.org/0000-0002-6451-8154"]},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Yadav Pooja","raw_affiliation_strings":["Indian Institute of Technology Roorkee,Physics Department,Roorkee,India","Physics Department, Indian Institute of Technology Roorkee, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Roorkee,Physics Department,Roorkee,India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Physics Department, Indian Institute of Technology Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000687031","display_name":"Hemant Arora","orcid":"https://orcid.org/0000-0001-7937-5451","observed_orcids":["https://orcid.org/0000-0001-7937-5451"]},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Arora Hemant","raw_affiliation_strings":["Indian Institute of Technology Roorkee,Physics Department,Roorkee,India","Physics Department, Indian Institute of Technology Roorkee, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Roorkee,Physics Department,Roorkee,India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Physics Department, Indian Institute of Technology Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024673605","display_name":"Arup Samanta","orcid":"https://orcid.org/0000-0002-2057-0786","observed_orcids":["https://orcid.org/0000-0002-2057-0786"]},"institutions":[{"id":"https://openalex.org/I154851008","display_name":"Indian Institute of Technology Roorkee","ror":"https://ror.org/00582g326","country_code":"IN","type":"education","lineage":["https://openalex.org/I154851008"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Samanta Arup","raw_affiliation_strings":["Indian Institute of Technology Roorkee,Physics Department,Roorkee,India","Physics Department, Indian Institute of Technology Roorkee, Roorkee, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Indian Institute of Technology Roorkee,Physics Department,Roorkee,India","institution_ids":["https://openalex.org/I154851008"]},{"raw_affiliation_string":"Physics Department, Indian Institute of Technology Roorkee, Roorkee, India","institution_ids":["https://openalex.org/I154851008"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I154851008"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.22613081,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"4","issue":null,"first_page":"1","last_page":"3"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.6011000275611877,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.6011000275611877,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.36059999465942383,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.008500000461935997,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nitrogen-donors","display_name":"nitrogen donors","score":0.8619999885559082},{"id":"https://openalex.org/keywords/silicon","display_name":"silicon","score":0.6129999756813049},{"id":"https://openalex.org/keywords/single-electron-tunneling-devices","display_name":"single-electron tunneling devices","score":0.9229999780654907},{"id":"https://openalex.org/keywords/substitutional-doping","display_name":"substitutional doping","score":0.8180000185966492},{"id":"https://openalex.org/keywords/room-temperature-operation","display_name":"room-temperature operation","score":0.8450000286102295},{"id":"https://openalex.org/keywords/shallow-dopants","display_name":"shallow dopants","score":0.7699999809265137},{"id":"https://openalex.org/keywords/quantum-computing","display_name":"quantum computing","score":0.5049999952316284},{"id":"https://openalex.org/keywords/density-of-states","display_name":"density of states","score":0.7239999771118164},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.7149999737739563}],"concepts":[{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7723814845085144},{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.7704346179962158},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7065790891647339},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5606080889701843},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5500982999801636},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4718087911605835},{"id":"https://openalex.org/C2993420144","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen atom","level":3,"score":0.46084117889404297},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.420365571975708},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4165025055408478},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32308220863342285},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3217177987098694},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2359178066253662},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.09278178215026855},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08755737543106079},{"id":"https://openalex.org/C2781311116","wikidata":"https://www.wikidata.org/wiki/Q83306","display_name":"Group (periodic table)","level":2,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nap55339.2022.9934527","doi":"https://doi.org/10.1109/nap55339.2022.9934527","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nap55339.2022.9934527","pdf_url":null,"source":{"id":"https://openalex.org/S4363608621","display_name":"IEEE International Conference Nanomaterials: Applications & Properties (NAP)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE 12th International Conference Nanomaterials: Applications & Properties (NAP)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1509182036","https://openalex.org/W1570194991","https://openalex.org/W1601335729","https://openalex.org/W1988723804","https://openalex.org/W2009960698","https://openalex.org/W2017567091","https://openalex.org/W2027056099","https://openalex.org/W2031766713","https://openalex.org/W2046614871","https://openalex.org/W2063421512","https://openalex.org/W2070929205","https://openalex.org/W2073635308","https://openalex.org/W2116645428","https://openalex.org/W2170247583","https://openalex.org/W2316431856","https://openalex.org/W2428870226","https://openalex.org/W2594775687"],"related_works":["https://openalex.org/W1996561502","https://openalex.org/W2043309154","https://openalex.org/W2134054069","https://openalex.org/W2031402206","https://openalex.org/W2956602520","https://openalex.org/W2088692076","https://openalex.org/W4200587103","https://openalex.org/W2012959172","https://openalex.org/W1995707634","https://openalex.org/W2135546725"],"abstract_inverted_index":{"Dopant":[0],"atom-based":[1],"transistors":[2],"are":[3,20],"capable":[4],"of":[5,54,61,77],"being":[6],"used":[7],"as":[8],"a":[9],"basic":[10],"element":[11],"in":[12,24,32],"quantum":[13],"computing":[14],"architecture.":[15],"Single":[16],"electron":[17,79],"tunneling":[18,80],"effects":[19],"exploited":[21],"and":[22,56],"utilized":[23],"these":[25,43],"devices.":[26,44,81],"Due":[27],"to":[28],"shallow":[29],"dopants":[30],"doping":[31],"existing":[33],"silicon-based":[34],"transistors,":[35],"the":[36,58,62,68],"room":[37,74],"temperature":[38,75],"operation":[39,76],"is":[40,71],"difficult":[41],"for":[42,73],"As":[45],"an":[46],"alternative,":[47],"we":[48],"substitutionally":[49],"doped":[50],"nitrogen":[51,69],"donor":[52,70],"instead":[53],"phosphorous":[55],"calculated":[57],"TDOS":[59],"and$\\mathrm{I}_{\\mathrm{D}}-\\mathrm{V}_{\\mathrm{G}}$characteristics":[60],"device.":[63],"The":[64],"results":[65],"confirm":[66],"that":[67],"suitable":[72],"single":[78]},"counts_by_year":[],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2025-10-10T00:00:00"}