{"id":"https://openalex.org/W4312379599","doi":"https://doi.org/10.1109/snw56633.2022.9889039","title":"Mechanism of HfO2-FeFET Memory Operation Revealed by Quantitative Analysis of Spontaneous Polarization and Trap Charge","display_name":"Mechanism of HfO2-FeFET Memory Operation Revealed by Quantitative Analysis of Spontaneous Polarization and Trap Charge","publication_year":2022,"publication_date":"2022-06-11","ids":{"openalex":"https://openalex.org/W4312379599","doi":"https://doi.org/10.1109/snw56633.2022.9889039"},"language":"en","primary_location":{"id":"doi:10.1109/snw56633.2022.9889039","doi":"https://doi.org/10.1109/snw56633.2022.9889039","is_oa":false,"landing_page_url":"https://doi.org/10.1109/snw56633.2022.9889039","pdf_url":null,"source":{"id":"https://openalex.org/S4306418821","display_name":"IEEE Silicon Nanoelectronics Workshop","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Silicon Nanoelectronics Workshop (SNW)","raw_type":"proceedings-article"},"parent_works":[],"lineage":["https://openalex.org/W4312379599"],"child_works_count":0,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008690719","display_name":"Reika Ichihara","orcid":"https://orcid.org/0000-0001-9016-5420","observed_orcids":["https://orcid.org/0000-0001-9016-5420"]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Reika Ichihara","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062618698","display_name":"Y. Higashi","orcid":"https://orcid.org/0000-0001-6121-0069","observed_orcids":["https://orcid.org/0000-0001-6121-0069"]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yusuke Higashi","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104092789","display_name":"Kunifumi Suzuki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kunifumi Suzuki","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052739835","display_name":"Haruka Kusai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Haruka Kusai","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022450843","display_name":"Yoko Yoshimura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoko Yoshimura","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010732540","display_name":"Takamasa Hamai","orcid":"https://orcid.org/0000-0002-2209-4031","observed_orcids":["https://orcid.org/0000-0002-2209-4031"]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takamasa Hamai","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084082768","display_name":"Yuta Kamiya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuta Kamiya","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100668871","display_name":"Kota Takahashi","orcid":"https://orcid.org/0009-0006-1173-8723","observed_orcids":["https://orcid.org/0009-0006-1173-8723"]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kota Takahashi","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Kazuhiro Matsuo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuhiro Matsuo","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089109298","display_name":"Yasushi Nakasaki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasushi Nakasaki","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hidenori Miyagawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hidenori Miyagawa","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034235511","display_name":"Masamichi Suzuki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masamichi Suzuki","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112769942","display_name":"Kiwamu Sakuma","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kiwamu Sakuma","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109145984","display_name":"Yuuichi Kamimuta","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuuichi Kamimuta","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087391821","display_name":"Masumi Saitoh","orcid":"https://orcid.org/0000-0001-6469-7992","observed_orcids":["https://orcid.org/0000-0001-6469-7992"]},"institutions":[{"id":"https://openalex.org/I4405260140","display_name":"KIOXIA Corporation (Japan)","ror":"https://ror.org/03ac4tk02","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405260140"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masumi Saitoh","raw_affiliation_strings":["Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan","institution_ids":["https://openalex.org/I4405260140"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4405260140"],"apc_list":null,"apc_paid":null,"fwci":0.7771,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.57455919,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10886","display_name":"Multiferroics and related materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.7979999780654907},{"id":"https://openalex.org/keywords/ferroelectric-field-effect-transistors","display_name":"ferroelectric field-effect transistors","score":0.9359999895095825},{"id":"https://openalex.org/keywords/ferroelectric-random-access-memory","display_name":"ferroelectric random access memory","score":0.7200000286102295},{"id":"https://openalex.org/keywords/ferroelectric-memory","display_name":"ferroelectric memory","score":0.8320000171661377},{"id":"https://openalex.org/keywords/spontaneous-polarization","display_name":"spontaneous polarization","score":0.9570000171661377},{"id":"https://openalex.org/keywords/trap-states","display_name":"trap states","score":0.9850000143051147},{"id":"https://openalex.org/keywords/operating-model","display_name":"operating model","score":0.628000020980835}],"concepts":[{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.7753639221191406},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.7021151781082153},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.6583160161972046},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6209084987640381},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5942863821983337},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5712107419967651},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.4594299793243408},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.41292959451675415},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34261173009872437},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.32440781593322754},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2769942879676819},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18695855140686035},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16671064496040344},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16389226913452148},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1582927107810974},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14036405086517334},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.09410262107849121},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/snw56633.2022.9889039","doi":"https://doi.org/10.1109/snw56633.2022.9889039","is_oa":false,"landing_page_url":"https://doi.org/10.1109/snw56633.2022.9889039","pdf_url":null,"source":{"id":"https://openalex.org/S4306418821","display_name":"IEEE Silicon Nanoelectronics Workshop","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE Silicon Nanoelectronics Workshop (SNW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2500525874","https://openalex.org/W2800070060","https://openalex.org/W2928181939"],"related_works":["https://openalex.org/W2482978312","https://openalex.org/W3108325618","https://openalex.org/W4404112108","https://openalex.org/W7101447347","https://openalex.org/W3164346087","https://openalex.org/W3186271703","https://openalex.org/W3186127223","https://openalex.org/W4226073126","https://openalex.org/W4390820971","https://openalex.org/W3195976656"],"abstract_inverted_index":{"We":[0],"present":[1],"the":[2,14],"detailed":[3],"understanding":[4],"of":[5,17],"Hf02":[6],"based":[7],"ferroelectric":[8],"FET":[9],"(FeFET)":[10],"memory.":[11],"Based":[12],"on":[13],"quantitative":[15],"extraction":[16],"both":[18],"spontaneous":[19],"polarization":[20],"and":[21],"trap":[22],"charge":[23],"during":[24],"memory":[25],"operation,":[26],"an":[27],"accurate":[28],"operating":[29],"model":[30],"is":[31],"established.":[32]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1}],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2023-01-04T00:00:00"}