{"id":"https://openalex.org/W4308908697","doi":"https://doi.org/10.1007/s00339-022-06186-5","title":"Structural and electronic properties of hydrogenated gallium nitride with vacancy and doping defects","display_name":"Structural and electronic properties of hydrogenated gallium nitride with vacancy and doping defects","publication_year":2022,"publication_date":"2022-11-10","ids":{"openalex":"https://openalex.org/W4308908697","doi":"https://doi.org/10.1007/s00339-022-06186-5"},"language":"en","primary_location":{"id":"doi:10.1007/s00339-022-06186-5","doi":"https://doi.org/10.1007/s00339-022-06186-5","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s00339-022-06186-5","pdf_url":null,"source":{"id":"https://openalex.org/S52123058","display_name":"Applied Physics A","issn_l":"0947-8396","issn":["0947-8396","1432-0630"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-class-a","anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics A","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W4308908697"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008251930","display_name":"D.S. Gomes","orcid":"https://orcid.org/0000-0003-1840-4022","observed_orcids":["https://orcid.org/0000-0003-1840-4022"]},"institutions":[{"id":"https://openalex.org/I169045520","display_name":"Universidade Federal da Para\u00edba","ror":"https://ror.org/00p9vpz11","country_code":"BR","type":"education","lineage":["https://openalex.org/I169045520"]}],"countries":["BR"],"is_corresponding":true,"raw_author_name":"D. S. Gomes","raw_affiliation_strings":["Departamento de F\u00edsica, Universidade Federal da Para\u00edba, Caixa Postal 5008, 58059-900, Jo\u00e3o Pessoa, PB, Brazil"],"raw_orcid":"https://orcid.org/0000-0003-1840-4022","affiliations":[{"raw_affiliation_string":"Departamento de F\u00edsica, Universidade Federal da Para\u00edba, Caixa Postal 5008, 58059-900, Jo\u00e3o Pessoa, PB, Brazil","institution_ids":["https://openalex.org/I169045520"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022082191","display_name":"J.M. Pontes","orcid":"https://orcid.org/0000-0003-0186-2895","observed_orcids":["https://orcid.org/0000-0003-0186-2895"]},"institutions":[{"id":"https://openalex.org/I169045520","display_name":"Universidade Federal da Para\u00edba","ror":"https://ror.org/00p9vpz11","country_code":"BR","type":"education","lineage":["https://openalex.org/I169045520"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"J. M. Pontes","raw_affiliation_strings":["Departamento de F\u00edsica, Universidade Federal da Para\u00edba, Caixa Postal 5008, 58059-900, Jo\u00e3o Pessoa, PB, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de F\u00edsica, Universidade Federal da Para\u00edba, Caixa Postal 5008, 58059-900, Jo\u00e3o Pessoa, PB, Brazil","institution_ids":["https://openalex.org/I169045520"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004707885","display_name":"S\u00e9rgio Azevedo","orcid":"https://orcid.org/0000-0002-7603-5141","observed_orcids":["https://orcid.org/0000-0002-7603-5141"]},"institutions":[{"id":"https://openalex.org/I169045520","display_name":"Universidade Federal da Para\u00edba","ror":"https://ror.org/00p9vpz11","country_code":"BR","type":"education","lineage":["https://openalex.org/I169045520"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"S. Azevedo","raw_affiliation_strings":["Departamento de F\u00edsica, Universidade Federal da Para\u00edba, Caixa Postal 5008, 58059-900, Jo\u00e3o Pessoa, PB, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de F\u00edsica, Universidade Federal da Para\u00edba, Caixa Postal 5008, 58059-900, Jo\u00e3o Pessoa, PB, Brazil","institution_ids":["https://openalex.org/I169045520"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5008251930"],"corresponding_institution_ids":["https://openalex.org/I169045520"],"apc_list":{"value":3390,"currency":"USD","value_usd":3390},"apc_paid":null,"fwci":0.4211,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.43681012,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":97},"biblio":{"volume":"128","issue":"12","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9434000253677368,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9434000253677368,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.05339999869465828,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11948","display_name":"Machine Learning in Materials Science","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-monolayer","display_name":"GaN monolayer","score":0.8669999837875366},{"id":"https://openalex.org/keywords/2d-materials","display_name":"two-dimensional materials","score":0.9120000004768372},{"id":"https://openalex.org/keywords/vacancy-defects","display_name":"vacancy defects","score":0.7649999856948853},{"id":"https://openalex.org/keywords/doping","display_name":"doping","score":0.8659999966621399},{"id":"https://openalex.org/keywords/structural-stability","display_name":"structural stability","score":0.8730000257492065},{"id":"https://openalex.org/keywords/formation-energy","display_name":"formation energy","score":0.8100000023841858},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.5830000042915344},{"id":"https://openalex.org/keywords/electronic-properties","display_name":"electronic properties","score":0.7960000038146973},{"id":"https://openalex.org/keywords/semiconductor-properties","display_name":"semiconductor properties","score":0.49300000071525574}],"concepts":[{"id":"https://openalex.org/C114221277","wikidata":"https://www.wikidata.org/wiki/Q899743","display_name":"Vacancy defect","level":2,"score":0.7298485636711121},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7260444760322571},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.715218722820282},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.7130604386329651},{"id":"https://openalex.org/C7070889","wikidata":"https://www.wikidata.org/wiki/Q902488","display_name":"Monolayer","level":2,"score":0.7057242393493652},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.6234678030014038},{"id":"https://openalex.org/C152365726","wikidata":"https://www.wikidata.org/wiki/Q1048589","display_name":"Density functional theory","level":2,"score":0.6087012887001038},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5795321464538574},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5542207360267639},{"id":"https://openalex.org/C86025842","wikidata":"https://www.wikidata.org/wiki/Q5358432","display_name":"Electronic structure","level":2,"score":0.5442784428596497},{"id":"https://openalex.org/C159467904","wikidata":"https://www.wikidata.org/wiki/Q2001702","display_name":"Chemical physics","level":1,"score":0.48865392804145813},{"id":"https://openalex.org/C73301696","wikidata":"https://www.wikidata.org/wiki/Q5469984","display_name":"Formalism (music)","level":3,"score":0.46494096517562866},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.4364311099052429},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4175187051296234},{"id":"https://openalex.org/C155673373","wikidata":"https://www.wikidata.org/wiki/Q1648886","display_name":"Structural stability","level":2,"score":0.41590258479118347},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3865327835083008},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3611920177936554},{"id":"https://openalex.org/C147597530","wikidata":"https://www.wikidata.org/wiki/Q369472","display_name":"Computational chemistry","level":1,"score":0.28087735176086426},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19217875599861145},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0714830756187439},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.061811476945877075},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.05484896898269653},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C142362112","wikidata":"https://www.wikidata.org/wiki/Q735","display_name":"Art","level":0,"score":0.0},{"id":"https://openalex.org/C153349607","wikidata":"https://www.wikidata.org/wiki/Q36649","display_name":"Visual arts","level":1,"score":0.0},{"id":"https://openalex.org/C558565934","wikidata":"https://www.wikidata.org/wiki/Q2743","display_name":"Musical","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1007/s00339-022-06186-5","doi":"https://doi.org/10.1007/s00339-022-06186-5","is_oa":false,"landing_page_url":"https://doi.org/10.1007/s00339-022-06186-5","pdf_url":null,"source":{"id":"https://openalex.org/S52123058","display_name":"Applied Physics A","issn_l":"0947-8396","issn":["0947-8396","1432-0630"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-class-a","anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics A","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G4706161033","display_name":null,"funder_award_id":"303069/2021-0","funder_id":"https://openalex.org/F4320322025","funder_display_name":"Conselho Nacional de Desenvolvimento Cient\u00edfico e Tecnol\u00f3gico"},{"id":"https://openalex.org/G5145962910","display_name":null,"funder_award_id":"151/2018","funder_id":"https://openalex.org/F4320323351","funder_display_name":"Funda\u00e7\u00e3o de Apoio \u00e0 Pesquisa do Estado da Para\u00edba"}],"funders":[{"id":"https://openalex.org/F4320321091","display_name":"Coordena\u00e7\u00e3o de Aperfei\u00e7oamento de Pessoal de N\u00edvel Superior","ror":"https://ror.org/00x0ma614"},{"id":"https://openalex.org/F4320322025","display_name":"Conselho Nacional de Desenvolvimento Cient\u00edfico e Tecnol\u00f3gico","ror":"https://ror.org/03swz6y49"},{"id":"https://openalex.org/F4320323351","display_name":"Funda\u00e7\u00e3o de Apoio \u00e0 Pesquisa do Estado da Para\u00edba","ror":"https://ror.org/021y4b202"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":42,"referenced_works":["https://openalex.org/W134900461","https://openalex.org/W1920858751","https://openalex.org/W1978103451","https://openalex.org/W1981053966","https://openalex.org/W1981368803","https://openalex.org/W1987016445","https://openalex.org/W1993017167","https://openalex.org/W1994684381","https://openalex.org/W1999242781","https://openalex.org/W2012304502","https://openalex.org/W2036113194","https://openalex.org/W2043097788","https://openalex.org/W2045596260","https://openalex.org/W2055640329","https://openalex.org/W2058122340","https://openalex.org/W2059159281","https://openalex.org/W2071607035","https://openalex.org/W2071965345","https://openalex.org/W2072834001","https://openalex.org/W2113772106","https://openalex.org/W2126421651","https://openalex.org/W2129515233","https://openalex.org/W2230728100","https://openalex.org/W2313833806","https://openalex.org/W2332790995","https://openalex.org/W2513520339","https://openalex.org/W2516694888","https://openalex.org/W2563232664","https://openalex.org/W2743838547","https://openalex.org/W2752139218","https://openalex.org/W2765117566","https://openalex.org/W2801971099","https://openalex.org/W2874119892","https://openalex.org/W2915406884","https://openalex.org/W2951945596","https://openalex.org/W2997341545","https://openalex.org/W3022916199","https://openalex.org/W3120548694","https://openalex.org/W3206275400","https://openalex.org/W4223499221","https://openalex.org/W4287717709","https://openalex.org/W6887682970"],"related_works":["https://openalex.org/W7119256709","https://openalex.org/W4390665336","https://openalex.org/W3113729204","https://openalex.org/W2972380511","https://openalex.org/W2906525396","https://openalex.org/W2497924515","https://openalex.org/W2801971099","https://openalex.org/W2808053960","https://openalex.org/W7221001064","https://openalex.org/W4220917859"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":2}],"updated_date":"2026-11-14T11:04:58.165337","created_date":"2022-11-19T00:00:00"}