{"id":"https://openalex.org/W4298109941","doi":"https://doi.org/10.1149/10904.0329ecst","title":"Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)","display_name":"Study of Dopant Activation in Arsenic-Implanted Laser Annealed Si By Differential Hall Effect Metrology (DHEM)","publication_year":2022,"publication_date":"2022-09-30","ids":{"openalex":"https://openalex.org/W4298109941","doi":"https://doi.org/10.1149/10904.0329ecst"},"language":"en","primary_location":{"id":"doi:10.1149/10904.0329ecst","doi":"https://doi.org/10.1149/10904.0329ecst","is_oa":false,"landing_page_url":"https://doi.org/10.1149/10904.0329ecst","pdf_url":null,"source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109586688","display_name":"Abhijeet Joshi","orcid":"https://orcid.org/0000-0002-2032-4307","observed_orcids":["https://orcid.org/0000-0002-2032-4307"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Abhijeet Joshi","raw_affiliation_strings":["Active Layer Parametrics (ALP), Scotts Valley, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Active Layer Parametrics (ALP), Scotts Valley, California, USA","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070330276","display_name":"Toshiyuki Tabata","orcid":"https://orcid.org/0000-0003-4923-5663","observed_orcids":["https://orcid.org/0000-0003-4923-5663"]},"institutions":[{"id":"https://openalex.org/I4210115884","display_name":"Laser Systems & Solutions of Europe (France)","ror":"https://ror.org/02hynf559","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210095113","https://openalex.org/I4210115884"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Toshiyuki Tabata","raw_affiliation_strings":["Laser Systems & Solutions of Europe (LASSE)"],"raw_orcid":"https://orcid.org/0000-0003-4923-5663","affiliations":[{"raw_affiliation_string":"Laser Systems & Solutions of Europe (LASSE)","institution_ids":["https://openalex.org/I4210115884"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002712457","display_name":"Fabien Roz\u00e9","orcid":"https://orcid.org/0000-0003-0876-5086","observed_orcids":["https://orcid.org/0000-0003-0876-5086"]},"institutions":[{"id":"https://openalex.org/I4210115884","display_name":"Laser Systems & Solutions of Europe (France)","ror":"https://ror.org/02hynf559","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210095113","https://openalex.org/I4210115884"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Fabien Roze","raw_affiliation_strings":["Laser Systems & Solutions of Europe (LASSE)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laser Systems & Solutions of Europe (LASSE)","institution_ids":["https://openalex.org/I4210115884"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5067531824","display_name":"B\u00fclent M. Ba\u015fol","orcid":"https://orcid.org/0000-0002-7691-1113","observed_orcids":["https://orcid.org/0000-0002-7691-1113"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Bulent M Basol","raw_affiliation_strings":["Active Layer Parametrics (ALP), Scotts Valley, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Active Layer Parametrics (ALP), Scotts Valley, California, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.064,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.68582658,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"109","issue":"4","first_page":"329","last_page":"333"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9214000105857849,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9214000105857849,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.06419999897480011,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.005200000014156103,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dopant-activation","display_name":"dopant activation","score":0.8209999799728394},{"id":"https://openalex.org/keywords/arsenic-implantation","display_name":"arsenic implantation","score":0.8930000066757202},{"id":"https://openalex.org/keywords/silicon","display_name":"silicon","score":0.6930000185966492},{"id":"https://openalex.org/keywords/contact-resistivity","display_name":"contact resistivity","score":0.8109999895095825},{"id":"https://openalex.org/keywords/heavily-doped-silicon","display_name":"heavily doped silicon","score":0.5789999961853027}],"concepts":[{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.7806378602981567},{"id":"https://openalex.org/C134112204","wikidata":"https://www.wikidata.org/wiki/Q10656","display_name":"Hall effect","level":3,"score":0.7152899503707886},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.660702109336853},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6545029878616333},{"id":"https://openalex.org/C195766429","wikidata":"https://www.wikidata.org/wiki/Q394","display_name":"Metrology","level":2,"score":0.6467110514640808},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.594910740852356},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5515076518058777},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5341075658798218},{"id":"https://openalex.org/C502230775","wikidata":"https://www.wikidata.org/wiki/Q871","display_name":"Arsenic","level":2,"score":0.5148198008537292},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5036775469779968},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.48644590377807617},{"id":"https://openalex.org/C2780081452","wikidata":"https://www.wikidata.org/wiki/Q5297293","display_name":"Dopant Activation","level":4,"score":0.4587964713573456},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3753412663936615},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.2241722047328949},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20345038175582886},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2009180188179016},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15721872448921204},{"id":"https://openalex.org/C107872376","wikidata":"https://www.wikidata.org/wiki/Q321355","display_name":"Environmental chemistry","level":1,"score":0.08055451512336731},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.073422372341156},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06873685121536255}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/10904.0329ecst","doi":"https://doi.org/10.1149/10904.0329ecst","is_oa":false,"landing_page_url":"https://doi.org/10.1149/10904.0329ecst","pdf_url":null,"source":{"id":"https://openalex.org/S4210205149","display_name":"ECS Transactions","issn_l":"1938-5862","issn":["1938-5862","1938-6737","2151-2051"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["norway-1","poland-20"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Transactions","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W3215631749","https://openalex.org/W3217164586","https://openalex.org/W4229444189","https://openalex.org/W4250569998","https://openalex.org/W2062038451","https://openalex.org/W3191591181","https://openalex.org/W3172030867","https://openalex.org/W2492742560","https://openalex.org/W2108159790","https://openalex.org/W4226091861"],"abstract_inverted_index":{"Ultra-violet":[0],"(UV)":[1],"laser":[2],"annealing":[3],"(LA)":[4],"is":[5,10],"a":[6,49],"promising":[7],"technology":[8],"that":[9],"being":[11],"investigated":[12],"for":[13,38],"next-generation":[14],"CMOS":[15],"processing.":[16],"UV-LA\u2019s":[17],"unique":[18],"capability":[19],"of":[20,52,55],"activating":[21],"dopants":[22],"very":[23,31,40,58],"near":[24],"to":[25,29],"the":[26,30,53,73],"surface":[27],"due":[28],"shallow":[32],"penetration":[33],"depth":[34,75],"can":[35],"be":[36],"critical":[37],"achieving":[39],"low-contact":[41],"resistivity":[42],"materials":[43],"and":[44,63,68],"structures.":[45],"Here":[46],"we":[47],"present":[48],"detailed":[50],"analysis":[51],"effects":[54],"UV-LA":[56],"on":[57],"highly":[59],"As-doped":[60],"material.":[61],"Physical":[62],"chemical":[64],"data-sets":[65],"(SIMS,":[66],"XTEM":[67],"FFTM)":[69],"are":[70],"compared":[71],"with":[72],"electrical":[74],"profiles":[76],"obtained":[77],"using":[78],"Differential":[79],"Hall":[80],"Effect":[81],"Metrology":[82],"(DHEM).":[83]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-08-05T07:39:15.569665","created_date":"2022-10-01T00:00:00"}