{"id":"https://openalex.org/W4297923317","doi":"https://doi.org/10.9734/bpi/taier/v2/3719a","title":"Leakage Current Analysis in Mosfets Using Matlab GUI","display_name":"Leakage Current Analysis in Mosfets Using Matlab GUI","publication_year":2022,"publication_date":"2022-09-20","ids":{"openalex":"https://openalex.org/W4297923317","doi":"https://doi.org/10.9734/bpi/taier/v2/3719a"},"language":"en","primary_location":{"id":"doi:10.9734/bpi/taier/v2/3719a","doi":"https://doi.org/10.9734/bpi/taier/v2/3719a","is_oa":false,"landing_page_url":"https://doi.org/10.9734/bpi/taier/v2/3719a","pdf_url":null,"source":{"id":"https://openalex.org/S4306486234","display_name":"Book Publisher International (a part of SCIENCEDOMAIN International)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Techniques and Innovation in Engineering Research Vol. 2","raw_type":"book-chapter"},"volume":null,"type":"book-chapter","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084549212","display_name":"Md. Masood Ahmad","orcid":"https://orcid.org/0000-0001-6728-4683","observed_orcids":["https://orcid.org/0000-0001-6728-4683"]},"institutions":[{"id":"https://openalex.org/I885392262","display_name":"GITAM University","ror":"https://ror.org/0440p1d37","country_code":"IN","type":"education","lineage":["https://openalex.org/I885392262"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Md. Masood Ahmad","raw_affiliation_strings":["GITAM University, India","GITAM University, India. (India)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GITAM University, India","institution_ids":["https://openalex.org/I885392262"]},{"raw_affiliation_string":"GITAM University, India. (India)","institution_ids":["https://openalex.org/I885392262"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057432534","display_name":"D. Anitha","orcid":"https://orcid.org/0000-0002-9202-6421","observed_orcids":["https://orcid.org/0000-0002-9202-6421"]},"institutions":[{"id":"https://openalex.org/I885392262","display_name":"GITAM University","ror":"https://ror.org/0440p1d37","country_code":"IN","type":"education","lineage":["https://openalex.org/I885392262"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"D. Anitha","raw_affiliation_strings":["GITAM University, India","GITAM University, India. (India)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GITAM University, India","institution_ids":["https://openalex.org/I885392262"]},{"raw_affiliation_string":"GITAM University, India. (India)","institution_ids":["https://openalex.org/I885392262"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I885392262"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.0,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"29","last_page":"42"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9779999852180481,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9779999852180481,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.01269999984651804,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.00279999990016222,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.9020000100135803},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.9739999771118164},{"id":"https://openalex.org/keywords/subthreshold-leakage","display_name":"subthreshold leakage","score":0.9369999766349792},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"threshold voltage","score":0.9909999966621399},{"id":"https://openalex.org/keywords/channel-length","display_name":"channel length","score":0.7039999961853027},{"id":"https://openalex.org/keywords/channel-width","display_name":"channel width","score":0.9330000281333923},{"id":"https://openalex.org/keywords/oxide-thickness","display_name":"oxide thickness","score":0.8169999718666077},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.8180000185966492},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.8859999775886536},{"id":"https://openalex.org/keywords/matlab-gui","display_name":"MATLAB GUI","score":0.4230000078678131}],"concepts":[{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.8277859687805176},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.7163581848144531},{"id":"https://openalex.org/C73118932","wikidata":"https://www.wikidata.org/wiki/Q5305541","display_name":"Drain-induced barrier lowering","level":5,"score":0.7078269124031067},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6257032155990601},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6022578477859497},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.575385332107544},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5715713500976562},{"id":"https://openalex.org/C33556034","wikidata":"https://www.wikidata.org/wiki/Q7318266","display_name":"Reverse short-channel effect","level":5,"score":0.5465776920318604},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5387272834777832},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5373221039772034},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4535249173641205},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3794902265071869},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30201101303100586},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18748939037322998},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.9734/bpi/taier/v2/3719a","doi":"https://doi.org/10.9734/bpi/taier/v2/3719a","is_oa":false,"landing_page_url":"https://doi.org/10.9734/bpi/taier/v2/3719a","pdf_url":null,"source":{"id":"https://openalex.org/S4306486234","display_name":"Book Publisher International (a part of SCIENCEDOMAIN International)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"ebook platform"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Techniques and Innovation in Engineering Research Vol. 2","raw_type":"book-chapter"},{"id":"pmh:oai:HAL:hal-05071821v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-05071821","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Techniques and Innovation in Engineering Research Vol. 2, Book Publisher International (a part of SCIENCEDOMAIN International), pp.29-42, 2022, ⟨10.9734/bpi/taier/v2/3719A⟩","raw_type":"info:eu-repo/semantics/bookPart"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2371621979","https://openalex.org/W2992095289","https://openalex.org/W2518069270","https://openalex.org/W2328727053","https://openalex.org/W2044119409","https://openalex.org/W4206319569","https://openalex.org/W2994893419","https://openalex.org/W3084363895","https://openalex.org/W4378676349","https://openalex.org/W2164187024"],"abstract_inverted_index":{"Leakage":[0],"current":[1,17,43,74,88],"in":[2,13,135],"MOSFETs":[3],"has":[4],"a":[5,59],"mathematical":[6,9],"expression.":[7],"The":[8,15,22,41,55,72,85],"expression":[10],"is":[11,27,49,58,78,130],"complex":[12],"nature.":[14],"leakage":[16,39,42,73,87],"dependent":[18],"on":[19,68,90],"different":[20,31],"parameters.":[21],"aim":[23],"of":[24,93,98,103,127],"this":[25],"chapter":[26],"to":[28,35,37,62,66,107,113,123],"see":[29,124],"how":[30],"parameters":[32,120,129],"are":[33,121],"going":[34],"contribute":[36],"the":[38,46,52,69,82,99,125,133],"current.":[40],"occurs":[44],"when":[45],"input":[47],"voltage":[48,57,64,77,115],"less":[50],"than":[51],"threshold":[53,56,76,110],"voltage.":[54,84],"minimum":[60],"gate":[61,106],"source":[63,108,114],"required":[65],"turn":[67],"MOSFET":[70],"device.":[71],"below":[75],"also":[79],"known":[80],"as":[81],"subthreshold":[83,86],"depends":[89],"channel":[91,95],"length":[92],"MOSFET,":[94],"width,":[96],"permittivity":[97],"material,":[100],"temperature,":[101],"mobility":[102],"charge":[104],"carriers,":[105],"voltage,":[109,111],"drain":[112],"and":[116],"oxide":[117],"thickness.":[118],"These":[119],"manipulated":[122],"impact":[126],"these":[128],"presented":[131],"through":[132],"graph":[134],"MATLAB":[136],"GUI.":[137]},"counts_by_year":[],"updated_date":"2026-10-25T09:29:13.331239","created_date":"2022-10-01T00:00:00"}