{"id":"https://openalex.org/W4295779596","doi":"https://doi.org/10.3390/mi13091519","title":"Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors","display_name":"Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors","publication_year":2022,"publication_date":"2022-09-14","ids":{"openalex":"https://openalex.org/W4295779596","doi":"https://doi.org/10.3390/mi13091519","pmid":"https://pubmed.ncbi.nlm.nih.gov/36144142","pmcid":"https://www.ncbi.nlm.nih.gov/pmc/articles/9505277"},"language":"en","primary_location":{"id":"doi:10.3390/mi13091519","doi":"https://doi.org/10.3390/mi13091519","is_oa":true,"landing_page_url":"https://doi.org/10.3390/mi13091519","pdf_url":"https://www.mdpi.com/2072-666X/13/9/1519/pdf?version=1663147443","source":{"id":"https://openalex.org/S96702057","display_name":"Micromachines","issn_l":"2072-666X","issn":["2072-666X"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Micromachines","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj","pubmed"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://www.mdpi.com/2072-666X/13/9/1519/pdf?version=1663147443","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110928746","display_name":"Idriss Abid","orcid":"https://orcid.org/0000-0001-5134-4952","observed_orcids":["https://orcid.org/0000-0001-5134-4952"]},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Idriss Abid","raw_affiliation_strings":["IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France","institution_ids":["https://openalex.org/I4210123471"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019965096","display_name":"Youssef Hamdaoui","orcid":"https://orcid.org/0009-0000-1707-0273","observed_orcids":["https://orcid.org/0009-0000-1707-0273"]},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Youssef Hamdaoui","raw_affiliation_strings":["IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France","institution_ids":["https://openalex.org/I4210123471"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008075431","display_name":"Jash Mehta","orcid":"https://orcid.org/0000-0002-4278-6596","observed_orcids":["https://orcid.org/0000-0002-4278-6596"]},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Jash Mehta","raw_affiliation_strings":["IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France"],"raw_orcid":"https://orcid.org/0000-0002-4278-6596","affiliations":[{"raw_affiliation_string":"IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France","institution_ids":["https://openalex.org/I4210123471"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003727842","display_name":"Joff Derluyn","orcid":"https://orcid.org/0000-0002-3375-8067","observed_orcids":["https://orcid.org/0000-0002-3375-8067"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Joff Derluyn","raw_affiliation_strings":["SOITEC-Belgium N.V., Kempische Steenweg 293, 3500 Hasselt, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SOITEC-Belgium N.V., Kempische Steenweg 293, 3500 Hasselt, Belgium","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016169727","display_name":"Farid Medjdoub","orcid":"https://orcid.org/0000-0002-4753-4718","observed_orcids":["https://orcid.org/0000-0002-4753-4718"]},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"Farid Medjdoub","raw_affiliation_strings":["IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France"],"raw_orcid":"https://orcid.org/0000-0002-4753-4718","affiliations":[{"raw_affiliation_string":"IEMN (Institute of Electronics, Microelectronics and Nanotechnology), Avenue Poincar\u00e9, 59650 Lille, France","institution_ids":["https://openalex.org/I4210123471"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5016169727","https://openalex.org/A5110928746"],"corresponding_institution_ids":["https://openalex.org/I4210123471"],"apc_list":{"value":2000,"currency":"CHF","value_usd":2094},"apc_paid":{"value":2000,"currency":"CHF","value_usd":2094},"fwci":0.3369,"has_fulltext":true,"cited_by_count":6,"citation_normalized_percentile":{"value":0.3755426,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"13","issue":"9","first_page":"1519","last_page":"1519"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.01140000019222498,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-on-si","display_name":"GaN-on-Si","score":0.8849999904632568},{"id":"https://openalex.org/keywords/normally-off-transistors","display_name":"normally-off transistors","score":0.847000002861023},{"id":"https://openalex.org/keywords/algan-gan-heterostructures","display_name":"AlGaN/GaN heterostructures","score":0.847000002861023},{"id":"https://openalex.org/keywords/gan-aln-superlattices","display_name":"AlN/GaN superlattices","score":0.9010000228881836},{"id":"https://openalex.org/keywords/high-breakdown-voltage","display_name":"high breakdown voltage","score":0.6980000138282776},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.8009999990463257}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7742143273353577},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7039180994033813},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.7037721872329712},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5986195206642151},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5624206066131592},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5568411350250244},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.4762078523635864},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4754086136817932},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.46387067437171936},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.45604732632637024},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.45118197798728943},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.44194984436035156},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.43302056193351746},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.41044747829437256},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.25856339931488037},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25112777948379517},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16417405009269714},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":6,"locations":[{"id":"doi:10.3390/mi13091519","doi":"https://doi.org/10.3390/mi13091519","is_oa":true,"landing_page_url":"https://doi.org/10.3390/mi13091519","pdf_url":"https://www.mdpi.com/2072-666X/13/9/1519/pdf?version=1663147443","source":{"id":"https://openalex.org/S96702057","display_name":"Micromachines","issn_l":"2072-666X","issn":["2072-666X"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Micromachines","raw_type":"journal-article"},{"id":"pmid:36144142","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/36144142","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Micromachines","raw_type":"Journal Article"},{"id":"pmh:oai:pubmedcentral.nih.gov:9505277","doi":null,"is_oa":true,"landing_page_url":"https://pmc.ncbi.nlm.nih.gov/articles/PMC9505277/","pdf_url":null,"source":{"id":"https://openalex.org/S2764455111","display_name":"PubMed Central","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Micromachines (Basel)","raw_type":"Text"},{"id":"pmh:oai:HAL:hal-03777891v1","doi":null,"is_oa":true,"landing_page_url":"https://hal.science/hal-03777891","pdf_url":"https://hal.science/hal-03777891/document","source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Micromachines, 2022, III\u2013V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:doaj.org/article:076f867140964040b8b130b7629d2dec","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/076f867140964040b8b130b7629d2dec","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Micromachines, Vol 13, Iss 9, p 1519 (2022)","raw_type":"article"},{"id":"pmh:oai:lilloa.univ-lille.fr:20.500.12210/76765","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/20.500.12210/76765","pdf_url":null,"source":{"id":"https://openalex.org/S4306402203","display_name":"LillOA (Universit\u00e9 de Lille (University Of Lille))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210123514","host_organization_name":"Centre d'\u00c9tudes en Civilisations, Langues et Lettres \u00c9trang\u00e8res","host_organization_lineage":["https://openalex.org/I4210123514"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"doi:10.3390/mi13091519","doi":"https://doi.org/10.3390/mi13091519","is_oa":true,"landing_page_url":"https://doi.org/10.3390/mi13091519","pdf_url":"https://www.mdpi.com/2072-666X/13/9/1519/pdf?version=1663147443","source":{"id":"https://openalex.org/S96702057","display_name":"Micromachines","issn_l":"2072-666X","issn":["2072-666X"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310310987","host_organization_name":"Multidisciplinary Digital Publishing Institute","host_organization_lineage":["https://openalex.org/P4310310987"],"host_organization_lineage_names":["Multidisciplinary Digital Publishing Institute"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Micromachines","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G353933619","display_name":"R\u00e9seau national sur GaN","funder_award_id":"ANR-11-LABX-0014","funder_id":"https://openalex.org/F4320320883","funder_display_name":"Agence Nationale de la Recherche"},{"id":"https://openalex.org/G3740754879","display_name":"Innovative Reliable Nitride based Power Devices and Applications","funder_award_id":"720527","funder_id":"https://openalex.org/F4320320300","funder_display_name":"European Commission"},{"id":"https://openalex.org/G434337789","display_name":null,"funder_award_id":"HORIZON2020","funder_id":"https://openalex.org/F4320320300","funder_display_name":"European Commission"}],"funders":[{"id":"https://openalex.org/F4320320300","display_name":"European Commission","ror":"https://ror.org/00k4n6c32"},{"id":"https://openalex.org/F4320320883","display_name":"Agence Nationale de la Recherche","ror":"https://ror.org/00rbzpz17"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4295779596.pdf","grobid_xml":"https://content.openalex.org/works/W4295779596.grobid-xml"},"referenced_works_count":36,"referenced_works":["https://openalex.org/W1886480411","https://openalex.org/W1925757349","https://openalex.org/W1975514424","https://openalex.org/W1987583076","https://openalex.org/W2047461173","https://openalex.org/W2059060314","https://openalex.org/W2059122445","https://openalex.org/W2060689117","https://openalex.org/W2064546203","https://openalex.org/W2066898362","https://openalex.org/W2078332212","https://openalex.org/W2087239360","https://openalex.org/W2115067661","https://openalex.org/W2120462245","https://openalex.org/W2122510259","https://openalex.org/W2131479949","https://openalex.org/W2140989478","https://openalex.org/W2147181763","https://openalex.org/W2169301346","https://openalex.org/W2291018704","https://openalex.org/W2296515699","https://openalex.org/W2582932297","https://openalex.org/W2619112201","https://openalex.org/W2623811665","https://openalex.org/W2786893101","https://openalex.org/W2791225800","https://openalex.org/W2884700596","https://openalex.org/W2950368820","https://openalex.org/W2982205081","https://openalex.org/W3005663071","https://openalex.org/W3087796500","https://openalex.org/W3115345163","https://openalex.org/W3134871793","https://openalex.org/W3171643577","https://openalex.org/W4200011672","https://openalex.org/W6604900819"],"related_works":["https://openalex.org/W4281567517","https://openalex.org/W4288286673","https://openalex.org/W3087796500","https://openalex.org/W2159764454","https://openalex.org/W7168017440","https://openalex.org/W2296515699","https://openalex.org/W4206893498","https://openalex.org/W2978766615","https://openalex.org/W4367041802","https://openalex.org/W2985964855"],"abstract_inverted_index":{"We":[0],"report":[1],"on":[2,13,49],"the":[3,33,68,74,77],"fabrication":[4],"and":[5],"electrical":[6],"characterization":[7],"of":[8,108,131],"AlGaN/GaN":[9],"normally":[10,20],"off":[11,21],"transistors":[12,81],"silicon":[14],"designed":[15],"for":[16],"high-voltage":[17],"operation.":[18],"The":[19,44],"configuration":[22],"was":[23,47],"achieved":[24],"with":[25,62,117],"a":[26,36,54,63,105],"p-gallium":[27],"nitride":[28],"(p-GaN)":[29],"cap":[30],"layer":[31],"below":[32],"gate,":[34],"enabling":[35],"positive":[37],"threshold":[38],"voltage":[39,57,80,110],"higher":[40,98],"than":[41,99],"+1":[42],"V.":[43,72],"buffer":[45,119],"structure":[46],"based":[48],"AlN/GaN":[50],"superlattices":[51],"(SLs),":[52],"delivering":[53],"vertical":[55,95],"breakdown":[56,79,96,109],"close":[58],"to":[59,70,91,124],"1.5":[60],"kV":[61],"low":[64,118],"leakage":[65],"current":[66],"all":[67],"way":[69],"1200":[71],"With":[73],"grounded":[75],"substrate,":[76],"hard":[78],"at":[82,111],"VGS":[83,112],"=":[84,113],"0":[85,114],"V":[86,115],"is":[87],"1.45":[88],"kV,":[89,126],"corresponding":[90],"an":[92],"outstanding":[93],"average":[94],"field":[97],"2.4":[100],"MV/cm.":[101],"High-voltage":[102],"characterizations":[103],"revealed":[104],"state-of-the-art":[106],"combination":[107],"together":[116],"electron":[120],"trapping":[121],"effects":[122],"up":[123],"1.4":[125],"as":[127],"assessed":[128],"by":[129],"means":[130],"substrate":[132],"ramp":[133],"measurements.":[134]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2022-09-15T00:00:00"}