{"id":"https://openalex.org/W4285248111","doi":"https://doi.org/10.1109/ted.2022.3170862","title":"Top-Gated MoS\u2082 Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO\u2082 on Mica","display_name":"Top-Gated MoS\u2082 Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO\u2082 on Mica","publication_year":2022,"publication_date":"2022-05-05","ids":{"openalex":"https://openalex.org/W4285248111","doi":"https://doi.org/10.1109/ted.2022.3170862"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2022.3170862","doi":"https://doi.org/10.1109/ted.2022.3170862","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2022.3170862","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079136309","display_name":"Xiao Zou","orcid":"https://orcid.org/0000-0003-1442-5918","observed_orcids":["https://orcid.org/0000-0003-1442-5918"]},"institutions":[{"id":"https://openalex.org/I31590910","display_name":"Jianghan University","ror":"https://ror.org/041c9x778","country_code":"CN","type":"education","lineage":["https://openalex.org/I31590910"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiao Zou","raw_affiliation_strings":["School of Intelligent Manufacturing, Jianghan University, Wuhan, China"],"raw_orcid":"https://orcid.org/0000-0003-1442-5918","affiliations":[{"raw_affiliation_string":"School of Intelligent Manufacturing, Jianghan University, Wuhan, China","institution_ids":["https://openalex.org/I31590910"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086990017","display_name":"Jiyue Zou","orcid":"https://orcid.org/0000-0001-7093-7921","observed_orcids":["https://orcid.org/0000-0001-7093-7921"]},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiyue Zou","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"raw_orcid":"https://orcid.org/0000-0001-7093-7921","affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100396535","display_name":"Lu Liu","orcid":"https://orcid.org/0000-0003-1341-5742","observed_orcids":["https://orcid.org/0000-0003-1341-5742"]},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lu Liu","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065481412","display_name":"Hongjiu Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I31590910","display_name":"Jianghan University","ror":"https://ror.org/041c9x778","country_code":"CN","type":"education","lineage":["https://openalex.org/I31590910"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongjiu Wang","raw_affiliation_strings":["School of Intelligent Manufacturing, Jianghan University, Wuhan, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Intelligent Manufacturing, Jianghan University, Wuhan, China","institution_ids":["https://openalex.org/I31590910"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044914665","display_name":"Jing-Ping Xu","orcid":"https://orcid.org/0000-0001-6959-7034","observed_orcids":["https://orcid.org/0000-0001-6959-7034"]},"institutions":[{"id":"https://openalex.org/I47720641","display_name":"Huazhong University of Science and Technology","ror":"https://ror.org/00p991c53","country_code":"CN","type":"education","lineage":["https://openalex.org/I47720641"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jing-Ping Xu","raw_affiliation_strings":["School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China"],"raw_orcid":"https://orcid.org/0000-0001-6959-7034","affiliations":[{"raw_affiliation_string":"School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China","institution_ids":["https://openalex.org/I47720641"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2195,"currency":"USD","value_usd":2195},"apc_paid":null,"fwci":0.5948,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.55271585,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"69","issue":"6","first_page":"3477","last_page":"3482"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.7689999938011169,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.7689999938011169,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.2045000046491623,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.006800000090152025,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mos2-field-effect-transistors","display_name":"MoS2 field-effect transistors","score":0.8519999980926514},{"id":"https://openalex.org/keywords/negative-capacitance-transistors","display_name":"negative capacitance transistors","score":0.9269999861717224},{"id":"https://openalex.org/keywords/top-gated-transistors","display_name":"top-gated transistors","score":0.8939999938011169},{"id":"https://openalex.org/keywords/pulsed-laser-deposition","display_name":"pulsed laser deposition","score":0.8429999947547913},{"id":"https://openalex.org/keywords/mica-substrate","display_name":"mica substrate","score":0.6629999876022339},{"id":"https://openalex.org/keywords/van-der-waals-heterostructures","display_name":"van der Waals heterostructures","score":0.8989999890327454},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.7699999809265137},{"id":"https://openalex.org/keywords/voltage-hysteresis","display_name":"voltage hysteresis","score":0.8519999980926514},{"id":"https://openalex.org/keywords/double-gate-transistor","display_name":"dual-gate transistors","score":0.7409999966621399},{"id":"https://openalex.org/keywords/capacitance-matching","display_name":"capacitance matching","score":0.6230000257492065},{"id":"https://openalex.org/keywords/surface-damage","display_name":"surface damage","score":0.3070000112056732}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5284490585327148},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4822905361652374},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.38831424713134766},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35541802644729614},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2290269434452057},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.12884068489074707},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.09685322642326355},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ted.2022.3170862","doi":"https://doi.org/10.1109/ted.2022.3170862","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2022.3170862","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2730049166","display_name":null,"funder_award_id":"61774064","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G986724856","display_name":null,"funder_award_id":"61974048","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W2048040049","https://openalex.org/W2057101140","https://openalex.org/W2076956969","https://openalex.org/W2121468137","https://openalex.org/W2158012362","https://openalex.org/W2210852559","https://openalex.org/W2605620125","https://openalex.org/W2616023779","https://openalex.org/W2734532847","https://openalex.org/W2767785099","https://openalex.org/W2773084460","https://openalex.org/W2790141594","https://openalex.org/W2795285915","https://openalex.org/W2801392758","https://openalex.org/W2803887303","https://openalex.org/W2909738803","https://openalex.org/W2913064527","https://openalex.org/W2936721054","https://openalex.org/W2944264655","https://openalex.org/W2949474005","https://openalex.org/W2957369893","https://openalex.org/W2963059610","https://openalex.org/W2971046937","https://openalex.org/W2997147401","https://openalex.org/W3032180121","https://openalex.org/W3040047576","https://openalex.org/W3042765681","https://openalex.org/W3043407373","https://openalex.org/W3085318509","https://openalex.org/W3092061604","https://openalex.org/W3092276652","https://openalex.org/W3092934498","https://openalex.org/W3106249996","https://openalex.org/W3162609859","https://openalex.org/W3195936360"],"related_works":["https://openalex.org/W3195936360","https://openalex.org/W3185415910","https://openalex.org/W4385194639","https://openalex.org/W4410536827","https://openalex.org/W4404563091","https://openalex.org/W3009905729","https://openalex.org/W2795285915","https://openalex.org/W2734532847","https://openalex.org/W4381328678","https://openalex.org/W3213171482"],"abstract_inverted_index":{"Top-gated":[0],"(TG)":[1],"molybdenum":[2],"disulfide":[3],"(MoS2)":[4],"field-effect":[5],"transistors":[6],"(FETs)":[7],"suffer":[8],"from":[9,144],"surface":[10],"damage,":[11],"unintentional":[12],"doping,":[13],"and":[14,72,110,115,131,152,160,188,192,219],"other":[15],"defects":[16],"introduced":[17],"to":[18,46,91,95,141,215],"the":[19,22,26,31,64,80,87,93,105,145,157,161,166,170,175,201,205,209],"MoS2channel":[20],"during":[21],"direct":[23],"deposition":[24,70],"of":[25,123,135,169],"gate":[27,177],"dielectric.":[28],"In":[29],"addition,":[30],"delicate":[32],"MoS2cannot":[33],"withstand":[34],"high-temperature":[35],"processing":[36],"or":[37,98],"annealing.":[38],"To":[39],"overcome":[40],"these":[41],"obstacles,":[42],"a":[43,119,180,193,221],"novel":[44],"path":[45],"prepare":[47],"TG":[48,101,217],"MoS2negative-capacitance":[49],"(NC)":[50],"FETs":[51],"is":[52,60,83,212],"proposed":[53,202],"in":[54],"this":[55],"study.":[56],"A":[57],"ferroelectric":[58,162],"HfZrO2(HZO)":[59],"first":[61],"deposited":[62],"on":[63],"mica":[65,158],"flake":[66],"by":[67,75,174],"pulsed":[68],"laser":[69],"(PLD)":[71],"then":[73],"annealed":[74],"rapid":[76],"thermal":[77],"processing.":[78],"Subsequently,":[79],"HZO/mica":[81,106],"stack":[82,107],"integrally":[84],"transferred":[85],"onto":[86],"MoS2surface,":[88],"without":[89],"needing":[90],"expose":[92],"MoS2flake":[94],"harsh":[96],"temperatures":[97],"PLD":[99,210],"environments.":[100],"multilayered":[102],"MoS2NCFETs":[103],"with":[104,118],"are":[108,139],"fabricated":[109],"demonstrate":[111],"stable":[112],"NC":[113],"effects":[114],"superior":[116],"performance":[117],"subthreshold":[120],"swing":[121],"(SS)":[122],"49":[124],"mV/dec,":[125],"ON/OFF":[126],"current":[127,187,206],"ratio":[128],"above":[129],"107,":[130],"anticlockwise":[132],"hysteresis":[133,190],"voltages":[134],"64":[136],"mV,":[137],"which":[138],"attributed":[140],"vital":[142],"contributions":[143],"damage-free":[146],"mica/MoS2van":[147],"der":[148],"Waals":[149],"heterojunction":[150],"interface":[151],"reasonable":[153],"capacitance":[154],"matching":[155],"between":[156],"dielectric":[159],"HZO":[163],"film.":[164],"Moreover,":[165],"experimental":[167],"results":[168],"dual-gate":[171],"MoS2transistor":[172],"modulated":[173],"bottom":[176],"show":[178],"that":[179,208],"positive":[181],"bottom-gate":[182,195],"bias":[183,196],"can":[184,197],"increase":[185],"drain":[186],"decrease":[189],"voltage,":[191],"negative":[194],"reduce":[198],"SS.":[199],"Therefore,":[200],"approach":[203],"changes":[204],"situation":[207],"method":[211],"hardly":[213],"used":[214],"fabricate":[216],"MoS2transistors":[218],"opens":[220],"new":[222],"window":[223],"for":[224],"nanoelectronics.":[225]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2022-07-14T00:00:00"}