{"id":"https://openalex.org/W4281264367","doi":"https://doi.org/10.1149/2162-8777/ac71c9","title":"A Novel Vertically Stacked Circular Nanosheet FET for High-Performance Applications","display_name":"A Novel Vertically Stacked Circular Nanosheet FET for High-Performance Applications","publication_year":2022,"publication_date":"2022-05-20","ids":{"openalex":"https://openalex.org/W4281264367","doi":"https://doi.org/10.1149/2162-8777/ac71c9"},"language":"en","primary_location":{"id":"doi:10.1149/2162-8777/ac71c9","doi":"https://doi.org/10.1149/2162-8777/ac71c9","is_oa":false,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac71c9","pdf_url":null,"source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016899722","display_name":"Kallepelli Sagar","orcid":"https://orcid.org/0000-0001-9875-924X","observed_orcids":["https://orcid.org/0000-0001-9875-924X"]},"institutions":[{"id":"https://openalex.org/I121750182","display_name":"National Institute of Technology Warangal","ror":"https://ror.org/017ebfz38","country_code":"IN","type":"education","lineage":["https://openalex.org/I121750182"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Sagar Kallepelli","raw_affiliation_strings":["Department of Electronics & Communication Engineering, National Institute of Technology, Warangal, India"],"raw_orcid":"https://orcid.org/0000-0001-9875-924X","affiliations":[{"raw_affiliation_string":"Department of Electronics & Communication Engineering, National Institute of Technology, Warangal, India","institution_ids":["https://openalex.org/I121750182"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5079475933","display_name":"Satish Maheshwaram","orcid":"https://orcid.org/0000-0002-1760-1545","observed_orcids":["https://orcid.org/0000-0002-1760-1545"]},"institutions":[{"id":"https://openalex.org/I121750182","display_name":"National Institute of Technology Warangal","ror":"https://ror.org/017ebfz38","country_code":"IN","type":"education","lineage":["https://openalex.org/I121750182"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Satish Maheshwaram","raw_affiliation_strings":["Department of Electronics & Communication Engineering, National Institute of Technology, Warangal, India"],"raw_orcid":"https://orcid.org/0000-0002-1760-1545","affiliations":[{"raw_affiliation_string":"Department of Electronics & Communication Engineering, National Institute of Technology, Warangal, India","institution_ids":["https://openalex.org/I121750182"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5016899722","https://openalex.org/A5079475933"],"corresponding_institution_ids":["https://openalex.org/I121750182"],"apc_list":{"value":1750,"currency":"USD","value_usd":1750},"apc_paid":null,"fwci":0.3424,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.4519665,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"11","issue":"6","first_page":"063005","last_page":"063005"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/vertical-stacking","display_name":"vertical stacking","score":0.5189999938011169},{"id":"https://openalex.org/keywords/drive-current","display_name":"drive current","score":0.7519999742507935},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.9580000042915344},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.9580000042915344},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"drain-induced barrier lowering","score":0.996999979019165},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"figure of merit","score":0.843999981880188},{"id":"https://openalex.org/keywords/10-nm-gate-length","display_name":"10 nm gate length","score":0.9120000004768372},{"id":"https://openalex.org/keywords/tcad-simulation","display_name":"TCAD simulation","score":0.5830000042915344},{"id":"https://openalex.org/keywords/high-performance-transistors","display_name":"high-performance transistors","score":0.6710000038146973}],"concepts":[{"id":"https://openalex.org/C51967427","wikidata":"https://www.wikidata.org/wiki/Q17148232","display_name":"Nanosheet","level":2,"score":0.9742114543914795},{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.8930749893188477},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8845093250274658},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6209394931793213},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.5240224003791809},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5230256915092468},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.47114840149879456},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.4329603612422943},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.3357474207878113},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.33469921350479126},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2888094186782837},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23248690366744995},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10740190744400024},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0751166045665741},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06058531999588013},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.05223098397254944}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/2162-8777/ac71c9","doi":"https://doi.org/10.1149/2162-8777/ac71c9","is_oa":false,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac71c9","pdf_url":null,"source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W1024010695","https://openalex.org/W1503733513","https://openalex.org/W1519358564","https://openalex.org/W1571270837","https://openalex.org/W1967271624","https://openalex.org/W1993617558","https://openalex.org/W2019324294","https://openalex.org/W2064996044","https://openalex.org/W2097655600","https://openalex.org/W2099627343","https://openalex.org/W2106032203","https://openalex.org/W2120782742","https://openalex.org/W2132877114","https://openalex.org/W2153266449","https://openalex.org/W2161536948","https://openalex.org/W2172185107","https://openalex.org/W2294797631","https://openalex.org/W2325235790","https://openalex.org/W2326539787","https://openalex.org/W2330771583","https://openalex.org/W2408354206","https://openalex.org/W2542632009","https://openalex.org/W2607206275","https://openalex.org/W2611605980","https://openalex.org/W2765860079","https://openalex.org/W2884995603","https://openalex.org/W2916684550","https://openalex.org/W2985248468","https://openalex.org/W2992316042","https://openalex.org/W2996061455","https://openalex.org/W3005956719","https://openalex.org/W3011412823","https://openalex.org/W3045670250","https://openalex.org/W3136513880","https://openalex.org/W4210615735"],"related_works":["https://openalex.org/W3081749010","https://openalex.org/W2925222426","https://openalex.org/W4239768386","https://openalex.org/W4410229239","https://openalex.org/W4382808758","https://openalex.org/W4391360735","https://openalex.org/W4400405501","https://openalex.org/W7133554821","https://openalex.org/W4367598333","https://openalex.org/W4392941303"],"abstract_inverted_index":{"Nanosheet":[0,8,77],"MOSFETs":[1,9,78],"with":[2,118],"circular":[3],"layout":[4],"geometry,":[5],"i.e.":[6],"Circular":[7,76],"(C-NSFETs)":[10],"are":[11,53],"explored":[12],"using":[13],"fully":[14],"calibrated":[15],"TCAD":[16],"for":[17],"High":[18],"performance":[19],"(HP)":[20],"applications":[21],"at":[22],"10":[23],"nm":[24],"gate":[25],"length.":[26],"The":[27,112],"DC":[28,87],"parameters":[29],"such":[30],"as":[31],"drive":[32,97,113],"current":[33,38,44,98,114],"(I":[34,39],"ON":[35],"),":[36,41],"leakage":[37],"OFF":[40],"I":[42],"ON/OFF":[43],"ratio,":[45],"Subthreshold":[46],"slope":[47],"(SS),":[48],"and":[49,71,73,80],"Drain-induced-barrier":[50],"lowering":[51],"(DIBL)":[52],"extracted.":[54],"Further,":[55],"we":[56],"analyzed":[57],"the":[58,65,83,95,109,116,119],"behavior":[59],"of":[60,67,85,90,105,115,121,127],"C-NSFETs":[61],"by":[62,103],"vertically":[63],"stacking":[64,104,120],"number":[66],"sheets":[68,123],"(2-sheet,":[69],"3-sheet,":[70],"4-sheet)":[72],"named":[74],"stacked":[75],"(SC-NSFETs)":[79],"also":[81],"compared":[82,131],"variations":[84],"their":[86],"FOMs":[88],"(figures":[89],"merit),":[91],"is":[92,100],"observed":[93],"that":[94],"device":[96,117],"level":[99],"further":[101],"improving":[102],"multiple":[106],"Nanosheets":[107],"within":[108],"same":[110],"foot-print.":[111],"4":[122],"has":[124],"an":[125],"improvement":[126],"\u223c4":[128],"times":[129],"when":[130],"to":[132],"single":[133],"sheet":[134],"C-NSFET.":[135]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2022-05-23T00:00:00"}