{"id":"https://openalex.org/W4243101403","doi":"https://doi.org/10.1143/jjap.28.l333","title":"TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface","display_name":"TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface","publication_year":1989,"publication_date":"1989-03-01","ids":{"openalex":"https://openalex.org/W4243101403","doi":"https://doi.org/10.1143/jjap.28.l333"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.28.l333","doi":"https://doi.org/10.1143/jjap.28.l333","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.28.l333","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.28.L333/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.28.L333/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113547277","display_name":"Shinsuke Sadamitsu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shinsuke Sadamitsu","raw_affiliation_strings":["Kyushu Electronic Metal Co., Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Electronic Metal Co., Ltd","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"Masakazu Sano","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masakazu Sano","raw_affiliation_strings":["Kyushu Electronic Metal Co., Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Electronic Metal Co., Ltd","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055589813","display_name":"Masataka Hourai","orcid":"https://orcid.org/0000-0001-9710-4057","observed_orcids":["https://orcid.org/0000-0001-9710-4057"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Masataka Hourai","raw_affiliation_strings":["Kyushu Electronic Metal Co., Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Electronic Metal Co., Ltd","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113551945","display_name":"Shigeo Sumita","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Shigeo Sumita","raw_affiliation_strings":["Kyushu Electronic Metal Co., Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Electronic Metal Co., Ltd","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112217384","display_name":"Nobukatsu Fujino","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Nobukatsu Fujino","raw_affiliation_strings":["Kyushu Electronic Metal Co., Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Kyushu Electronic Metal Co., Ltd","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002622111","display_name":"Toshio Shiraiwa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Toshio Shiraiwa","raw_affiliation_strings":["Osaka Titanium Co., Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Osaka Titanium Co., Ltd","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":1.4194,"has_fulltext":true,"cited_by_count":15,"citation_normalized_percentile":{"value":0.76245373,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"28","issue":"3A","first_page":"L333","last_page":"L333"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8407999873161316,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.8407999873161316,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.10339999943971634,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.05040000006556511,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nickel-contamination","display_name":"nickel contamination","score":0.9430000185966492},{"id":"https://openalex.org/keywords/nickel-silicide","display_name":"nickel silicide","score":0.6819999814033508},{"id":"https://openalex.org/keywords/nisi2","display_name":"NiSi2","score":0.8960000276565552},{"id":"https://openalex.org/keywords/shallow-pits","display_name":"shallow pits","score":0.7110000252723694},{"id":"https://openalex.org/keywords/oxidation-induced-stacking-faults","display_name":"oxidation-induced stacking faults","score":0.8610000014305115},{"id":"https://openalex.org/keywords/thermal-oxidation","display_name":"thermal oxidation","score":0.7730000019073486},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.8059999942779541},{"id":"https://openalex.org/keywords/etch-pits","display_name":"etch pits","score":0.7089999914169312}],"concepts":[{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.775711178779602},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7098177075386047},{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.6960890293121338},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6782266497612},{"id":"https://openalex.org/C112570922","wikidata":"https://www.wikidata.org/wiki/Q60528603","display_name":"Contamination","level":2,"score":0.6250939965248108},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5796636939048767},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.502849280834198},{"id":"https://openalex.org/C2779281663","wikidata":"https://www.wikidata.org/wiki/Q1549368","display_name":"Thermal oxidation","level":3,"score":0.4595900774002075},{"id":"https://openalex.org/C65440619","wikidata":"https://www.wikidata.org/wiki/Q177974","display_name":"Atmosphere (unit)","level":2,"score":0.441193550825119},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.3997349739074707},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.35576528310775757},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3290964365005493},{"id":"https://openalex.org/C199289684","wikidata":"https://www.wikidata.org/wiki/Q83353","display_name":"Mineralogy","level":1,"score":0.3225785195827484},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.264616996049881},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.25803500413894653},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.19865727424621582},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.16746607422828674},{"id":"https://openalex.org/C107872376","wikidata":"https://www.wikidata.org/wiki/Q321355","display_name":"Environmental chemistry","level":1,"score":0.12214663624763489},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05657288432121277},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.044666171073913574},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.28.l333","doi":"https://doi.org/10.1143/jjap.28.l333","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.28.l333","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.28.L333/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.28.l333","doi":"https://doi.org/10.1143/jjap.28.l333","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.28.l333","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.28.L333/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4243101403.pdf","grobid_xml":"https://content.openalex.org/works/W4243101403.grobid-xml"},"referenced_works_count":6,"referenced_works":["https://openalex.org/W1632707881","https://openalex.org/W1668616817","https://openalex.org/W2012744896","https://openalex.org/W2013879995","https://openalex.org/W2043840356","https://openalex.org/W2068719620"],"related_works":["https://openalex.org/W2013879995","https://openalex.org/W2988898766","https://openalex.org/W2060968577","https://openalex.org/W2096411943","https://openalex.org/W2949738314","https://openalex.org/W2056948930","https://openalex.org/W2331510637","https://openalex.org/W2054750619","https://openalex.org/W2081270794","https://openalex.org/W2041178463"],"abstract_inverted_index":{"The":[0],"behavior":[1],"of":[2,15,41,78],"Si(100)":[3],"surface":[4,40,57],"defects":[5],"induced":[6],"by":[7,13,58],"intentional":[8],"Ni":[9],"contamination":[10],"was":[11],"studied":[12],"means":[14],"etch-pit":[16],"observation":[17],"and":[18],"transmission":[19],"electron":[20],"microscopy.":[21],"After":[22],"annealing":[23],"at":[24,76,85],"1150\u00b0C":[25],"for":[26],"1":[27],"hour":[28],"in":[29],"N2":[30],"atmosphere,":[31],"shallow":[32],"pits":[33],"(SP)":[34],"were":[35,46,73],"observed":[36],"only":[37],"on":[38,55],"the":[39,42,56,59,65,79],"wafer.":[43],"These":[44],"SP":[45,81],"thought":[47],"to":[48,51],"be":[49],"attributable":[50],"NiSi2-type":[52],"silicides":[53],"formed":[54,75],"selected":[60],"area":[61],"diffraction":[62],"pattern.":[63],"During":[64],"additionl":[66],"thermal":[67],"oxidation,":[68],"oxidation-induced":[69],"stacking":[70],"faults":[71],"(OSF)":[72],"always":[74,84],"each":[77],"large":[80],"but":[82],"not":[83],"small":[86],"ones.":[87]},"counts_by_year":[{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3}],"updated_date":"2026-10-06T10:28:23.643775","created_date":"2022-05-12T00:00:00"}