{"id":"https://openalex.org/W4237060936","doi":"https://doi.org/10.1109/27.281547","title":"Plasma processing","display_name":"Plasma processing","publication_year":1994,"publication_date":"1994-01-01","ids":{"openalex":"https://openalex.org/W4237060936","doi":"https://doi.org/10.1109/27.281547","mag":"2296698221"},"language":"en","primary_location":{"id":"doi:10.1109/27.281547","doi":"https://doi.org/10.1109/27.281547","is_oa":false,"landing_page_url":"https://doi.org/10.1109/27.281547","pdf_url":null,"source":{"id":"https://openalex.org/S164692974","display_name":"IEEE Transactions on Plasma Science","issn_l":"0093-3813","issn":["0093-3813","1939-9375"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Plasma Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077850920","display_name":"David B. Graves","orcid":"https://orcid.org/0000-0002-2288-6768","observed_orcids":["https://orcid.org/0000-0002-2288-6768"]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"D.B. Graves","raw_affiliation_strings":["Department of Chemical Engineering, University of California, Berkeley, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5077850920"],"corresponding_institution_ids":["https://openalex.org/I95457486"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":13.9009,"has_fulltext":false,"cited_by_count":196,"citation_normalized_percentile":{"value":0.99455236,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"22","issue":"1","first_page":"31","last_page":"42"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9810000061988831,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9810000061988831,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10642","display_name":"Atmospheric-Pressure Plasma Applications","score":0.015300000086426735,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12077","display_name":"Vacuum and Plasma Arcs","score":0.00139999995008111,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/plasma-processing","display_name":"plasma processing","score":0.9440000057220459},{"id":"https://openalex.org/keywords/low-pressure-discharge","display_name":"low-pressure discharge","score":0.6600000262260437},{"id":"https://openalex.org/keywords/non-thermal-plasma","display_name":"non-thermal plasma","score":0.9399999976158142},{"id":"https://openalex.org/keywords/plasma-sputtering","display_name":"plasma sputtering","score":0.9100000262260437},{"id":"https://openalex.org/keywords/plasma-etching","display_name":"plasma etching","score":0.9959999918937683},{"id":"https://openalex.org/keywords/stripping","display_name":"stripping","score":0.5659999847412109},{"id":"https://openalex.org/keywords/cleaning","display_name":"cleaning","score":0.7379999756813049},{"id":"https://openalex.org/keywords/thin-film-deposition","display_name":"thin film deposition","score":0.9049999713897705},{"id":"https://openalex.org/keywords/microelectronics-manufacturing","display_name":"microelectronics manufacturing","score":0.9440000057220459},{"id":"https://openalex.org/keywords/integrated-circuit-fabrication","display_name":"integrated circuit fabrication","score":0.7730000019073486},{"id":"https://openalex.org/keywords/surface-modification","display_name":"surface modification","score":0.9670000076293945}],"concepts":[{"id":"https://openalex.org/C187937830","wikidata":"https://www.wikidata.org/wiki/Q175403","display_name":"Microelectronics","level":2,"score":0.7334206700325012},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.6753647327423096},{"id":"https://openalex.org/C145738678","wikidata":"https://www.wikidata.org/wiki/Q4364316","display_name":"Plasma processing","level":3,"score":0.6452451944351196},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.6206020712852478},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.5641676187515259},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.5428460240364075},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5239313244819641},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4961150586605072},{"id":"https://openalex.org/C2987263936","wikidata":"https://www.wikidata.org/wiki/Q10843872","display_name":"Materials processing","level":2,"score":0.47412896156311035},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.43974313139915466},{"id":"https://openalex.org/C21880701","wikidata":"https://www.wikidata.org/wiki/Q2144042","display_name":"Process engineering","level":1,"score":0.3979525864124298},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3740937411785126},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34784168004989624},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.2284429669380188},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19484466314315796},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17495772242546082},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/27.281547","doi":"https://doi.org/10.1109/27.281547","is_oa":false,"landing_page_url":"https://doi.org/10.1109/27.281547","pdf_url":null,"source":{"id":"https://openalex.org/S164692974","display_name":"IEEE Transactions on Plasma Science","issn_l":"0093-3813","issn":["0093-3813","1939-9375"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Plasma Science","raw_type":"journal-article"},{"id":"mag:2296698221","doi":null,"is_oa":false,"landing_page_url":"http://ieeexplore.ieee.org/iel1/27/6970/00281547.pdf","pdf_url":null,"source":{"id":"https://openalex.org/S164692974","display_name":"IEEE Transactions on Plasma Science","issn_l":"0093-3813","issn":["0093-3813","1939-9375"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-70","russia-white-list-3"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"IEEE Transactions on Plasma Science","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":53,"referenced_works":["https://openalex.org/W28442029","https://openalex.org/W114430604","https://openalex.org/W586821484","https://openalex.org/W635001031","https://openalex.org/W652953972","https://openalex.org/W1538462587","https://openalex.org/W1672666614","https://openalex.org/W1971066735","https://openalex.org/W1979105750","https://openalex.org/W1991771874","https://openalex.org/W1995206118","https://openalex.org/W2006064580","https://openalex.org/W2009408641","https://openalex.org/W2010050658","https://openalex.org/W2016236086","https://openalex.org/W2021233212","https://openalex.org/W2023494381","https://openalex.org/W2028017550","https://openalex.org/W2030709215","https://openalex.org/W2032477939","https://openalex.org/W2032633290","https://openalex.org/W2054706248","https://openalex.org/W2055665186","https://openalex.org/W2056106318","https://openalex.org/W2057925354","https://openalex.org/W2059801544","https://openalex.org/W2061188684","https://openalex.org/W2070127500","https://openalex.org/W2087710690","https://openalex.org/W2090065290","https://openalex.org/W2122540346","https://openalex.org/W2123466980","https://openalex.org/W2139907474","https://openalex.org/W2150109955","https://openalex.org/W2153116308","https://openalex.org/W2155025799","https://openalex.org/W2165215367","https://openalex.org/W2321186126","https://openalex.org/W2471002621","https://openalex.org/W2477322262","https://openalex.org/W2477853504","https://openalex.org/W2478144683","https://openalex.org/W2561351911","https://openalex.org/W2743949222","https://openalex.org/W2770176049","https://openalex.org/W2950740811","https://openalex.org/W3009930713","https://openalex.org/W4241798570","https://openalex.org/W4244610223","https://openalex.org/W4245104830","https://openalex.org/W4254945913","https://openalex.org/W6720397854","https://openalex.org/W6721339966"],"related_works":["https://openalex.org/W2027386612","https://openalex.org/W96159909","https://openalex.org/W2157974484","https://openalex.org/W7042646077","https://openalex.org/W2520090388","https://openalex.org/W2023410600","https://openalex.org/W2606636818","https://openalex.org/W2255746240","https://openalex.org/W580985688","https://openalex.org/W2373298861"],"abstract_inverted_index":{"Low":[0],"pressure,":[1],"non-equilibrium,":[2],"weakly":[3],"to":[4,45,93],"partially":[5],"ionized":[6],"gas":[7],"discharge":[8],"plasmas":[9,58],"are":[10,24],"used":[11],"for":[12,84],"a":[13],"variety":[14],"of":[15,47,67,81],"surface":[16,88],"materials":[17],"processing":[18,83],"applications.":[19],"The":[20,64],"most":[21],"extensive":[22],"applications":[23],"in":[25,40,51,59,73],"microelectronics":[26],"manufacturing,":[27],"where":[28],"plasma":[29,82,94],"sputtering,":[30],"etching,":[31],"stripping,":[32],"cleaning":[33],"and":[34,69],"film":[35],"deposition":[36],"play":[37],"key":[38],"roles":[39],"this":[41,74],"growing":[42],"industry.":[43],"Up":[44],"30%":[46],"all":[48],"process":[49,68],"steps":[50],"integrated":[52],"circuit":[53],"manufacture":[54],"involve":[55],"low":[56],"pressure":[57],"one":[60],"way":[61],"or":[62],"another.":[63],"rapid":[65],"pace":[66],"product":[70],"technological":[71],"change":[72],"industry,":[75],"coupled":[76],"with":[77],"the":[78],"unique":[79],"capabilities":[80],"extremely":[85],"finely":[86],"controlled":[87],"modification,":[89],"offers":[90],"new":[91],"opportunities":[92],"scientists.>":[95]},"counts_by_year":[{"year":2026,"cited_by_count":7},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":15},{"year":2023,"cited_by_count":9},{"year":2022,"cited_by_count":10},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":6},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":8},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2022-05-12T00:00:00"}