{"id":"https://openalex.org/W4229038596","doi":"https://doi.org/10.1149/2162-8777/ac6d7a","title":"A Charge-Based Analytical Model for Gate All Around Junction-Less Field Effect Transistor Including Interface Traps","display_name":"A Charge-Based Analytical Model for Gate All Around Junction-Less Field Effect Transistor Including Interface Traps","publication_year":2022,"publication_date":"2022-05-01","ids":{"openalex":"https://openalex.org/W4229038596","doi":"https://doi.org/10.1149/2162-8777/ac6d7a"},"language":"en","primary_location":{"id":"doi:10.1149/2162-8777/ac6d7a","doi":"https://doi.org/10.1149/2162-8777/ac6d7a","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac6d7a","pdf_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac6d7a/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac6d7a/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073353058","display_name":"Pratikhya Raut","orcid":"https://orcid.org/0009-0004-8332-0604","observed_orcids":["https://orcid.org/0009-0004-8332-0604"]},"institutions":[{"id":"https://openalex.org/I4401726783","display_name":"VIT-AP University","ror":"https://ror.org/007v4hf75","country_code":"IN","type":"education","lineage":["https://openalex.org/I4401726783"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Pratikhya Raut","raw_affiliation_strings":["School of Electronics Engineering, VIT-AP University, Andhra Pradesh 522237, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, VIT-AP University, Andhra Pradesh 522237, India","institution_ids":["https://openalex.org/I4401726783"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029155856","display_name":"Umakanta Nanda","orcid":"https://orcid.org/0000-0003-4746-5297","observed_orcids":["https://orcid.org/0000-0003-4746-5297"]},"institutions":[{"id":"https://openalex.org/I4401726783","display_name":"VIT-AP University","ror":"https://ror.org/007v4hf75","country_code":"IN","type":"education","lineage":["https://openalex.org/I4401726783"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Umakanta Nanda","raw_affiliation_strings":["School of Electronics Engineering, VIT-AP University, Andhra Pradesh 522237, India"],"raw_orcid":"https://orcid.org/0000-0003-4746-5297","affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, VIT-AP University, Andhra Pradesh 522237, India","institution_ids":["https://openalex.org/I4401726783"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5029155856"],"corresponding_institution_ids":["https://openalex.org/I4401726783"],"apc_list":{"value":1750,"currency":"USD","value_usd":1750},"apc_paid":null,"fwci":1.5668,"has_fulltext":true,"cited_by_count":24,"citation_normalized_percentile":{"value":0.82064938,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":99},"biblio":{"volume":"11","issue":"5","first_page":"051006","last_page":"051006"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9765999913215637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.018200000748038292,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0008999999845400453,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.8059999942779541},{"id":"https://openalex.org/keywords/flatband-voltage-shift","display_name":"flatband voltage shift","score":0.9610000252723694},{"id":"https://openalex.org/keywords/surface-potential","display_name":"surface potential","score":0.7080000042915344},{"id":"https://openalex.org/keywords/drain-current-modeling","display_name":"drain current model","score":0.6700000166893005},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.9670000076293945},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.9599999785423279},{"id":"https://openalex.org/keywords/sio2-gate-insulator","display_name":"SiO2 gate insulator","score":0.8859999775886536},{"id":"https://openalex.org/keywords/high-k-gate-stack","display_name":"high-k gate stack","score":0.9710000157356262}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8357664346694946},{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.7509157657623291},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6730732917785645},{"id":"https://openalex.org/C212702","wikidata":"https://www.wikidata.org/wiki/Q178150","display_name":"Insulator (electricity)","level":2,"score":0.539512574672699},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5177937746047974},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.5019505023956299},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.45613744854927063},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2872331142425537},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17244493961334229},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06673640012741089}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/2162-8777/ac6d7a","doi":"https://doi.org/10.1149/2162-8777/ac6d7a","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac6d7a","pdf_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac6d7a/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1149/2162-8777/ac6d7a","doi":"https://doi.org/10.1149/2162-8777/ac6d7a","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac6d7a","pdf_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac6d7a/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4229038596.pdf","grobid_xml":"https://content.openalex.org/works/W4229038596.grobid-xml"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W1967203796","https://openalex.org/W1999483775","https://openalex.org/W2345245893","https://openalex.org/W2573586940","https://openalex.org/W2789727650","https://openalex.org/W2793571649","https://openalex.org/W2800045859","https://openalex.org/W2953956715","https://openalex.org/W2970247932","https://openalex.org/W2970796140","https://openalex.org/W2974484632","https://openalex.org/W3093519353","https://openalex.org/W3093616069","https://openalex.org/W3111010639","https://openalex.org/W3119806152","https://openalex.org/W3121141801","https://openalex.org/W3139962101","https://openalex.org/W3164494509","https://openalex.org/W3164639208","https://openalex.org/W3177081779","https://openalex.org/W3194028373","https://openalex.org/W3194663205","https://openalex.org/W3215691814","https://openalex.org/W4205826034","https://openalex.org/W4214494398","https://openalex.org/W4220656520","https://openalex.org/W4220867507","https://openalex.org/W4225815893"],"related_works":["https://openalex.org/W2795503459","https://openalex.org/W2973512841","https://openalex.org/W4413156601","https://openalex.org/W1641634423","https://openalex.org/W2587934940","https://openalex.org/W1503863293","https://openalex.org/W2941800855","https://openalex.org/W2346733184","https://openalex.org/W7124909289","https://openalex.org/W2019898556"],"abstract_inverted_index":{"This":[0],"article":[1],"proposes":[2],"an":[3,160,181],"analytic":[4],"charge-based":[5],"model":[6,73],"that":[7],"incorporates":[8],"interface":[9,20,34,94,140],"trapping.":[10],"The":[11,53,89],"model\u2019s":[12],"applicability":[13],"to":[14,104,127],"all":[15],"operating":[16],"zones":[17],"includes":[18],"various":[19],"trap":[21,141],"charges":[22],"with":[23,77,118,153,166,168,177,192],"varying":[24],"doping":[25],"concentrations.":[26],"Using":[27],"the":[28,31,63,71,78,101,136,139,143,148],"analytical":[29,72],"model,":[30,70],"impact":[32,137],"of":[33,93,130,138],"traps":[35,95],"on":[36,142],"different":[37,131,186],"electrical":[38],"parameters,":[39],"such":[40],"as":[41,121,159,171,180,198],"channel":[42],"potential,":[43,45],"surface":[44,98],"electric":[46],"field,":[47],"and":[48,55,83,107,156,164,195],"drain":[49,64],"current,":[50],"is":[51,162],"examined.":[52],"transconductance":[54],"cut-off":[56],"frequency":[57],"models":[58],"are":[59],"also":[60],"developed":[61],"from":[62,87],"current":[65],"model.":[66],"To":[67,134],"validate":[68],"our":[69],"results":[74,82],"were":[75],"compared":[76,165],"TCAD":[79],"device":[80,132,152,187],"simulation":[81],"available":[84],"experimental":[85],"data":[86],"literature.":[88],"Fermi":[90],"level":[91],"location":[92],"greatly":[96],"influences":[97],"potential":[99],"in":[100,111],"bandgap,":[102],"leading":[103],"subthreshold":[105],"deterioration":[106],"flat":[108],"band":[109],"shifting":[110],"Junction":[112],"Less":[113],"Field":[114],"Effect":[115],"Transistor":[116],"(GAAJLFET)":[117],"SiO":[119,154,169,178,193],"2":[120,155,170,179,194],"a":[122,150,172,190,199],"gate":[123,173,200],"insulator,":[124],"which":[125],"leads":[126],"performance":[128],"degradation":[129],"parameters.":[133],"decrease":[135],"device\u2019s":[144],"characteristics":[145],"without":[146],"impairing":[147],"performance,":[149],"suitable":[151],"high-k":[157,196],"gate-stack":[158,197],"insulator":[161],"designed":[163],"GAAJLFET":[167,176,191],"insulator.":[174],"A":[175],"insulating":[182,201],"material":[183],"has":[184],"very":[185],"parameters":[188],"than":[189],"material.":[202]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":3}],"updated_date":"2026-10-27T15:51:10.671819","created_date":"2022-05-08T00:00:00"}