{"id":"https://openalex.org/W4220893405","doi":"https://doi.org/10.1021/acsnano.2c00435","title":"Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium","display_name":"Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium","publication_year":2022,"publication_date":"2022-03-11","ids":{"openalex":"https://openalex.org/W4220893405","doi":"https://doi.org/10.1021/acsnano.2c00435","pmid":"https://pubmed.ncbi.nlm.nih.gov/35274530"},"language":"en","primary_location":{"id":"doi:10.1021/acsnano.2c00435","doi":"https://doi.org/10.1021/acsnano.2c00435","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsnano.2c00435","pdf_url":null,"source":{"id":"https://openalex.org/S145476921","display_name":"ACS Nano","issn_l":"1936-0851","issn":["1936-0851","1936-086X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","doyens","jufo-3","ki-jl-3","medline","norway-2","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Nano","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","pubmed"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063972996","display_name":"Xingchao Zhang","orcid":"https://orcid.org/0000-0001-9004-8662","observed_orcids":["https://orcid.org/0000-0001-9004-8662"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingchao Zhang","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102776312","display_name":"Xianchao Liu","orcid":"https://orcid.org/0000-0001-8651-5133","observed_orcids":["https://orcid.org/0000-0001-8651-5133"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xianchao Liu","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101951195","display_name":"Chaoyi Zhang","orcid":"https://orcid.org/0009-0008-7114-2379","observed_orcids":["https://orcid.org/0009-0008-7114-2379"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chaoyi Zhang","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054538702","display_name":"Silu Peng","orcid":"https://orcid.org/0009-0009-9127-8967","observed_orcids":["https://orcid.org/0009-0009-9127-8967"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Silu Peng","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001640161","display_name":"Hongxi Zhou","orcid":"https://orcid.org/0000-0002-0721-5675","observed_orcids":["https://orcid.org/0000-0002-0721-5675"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongxi Zhou","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062604912","display_name":"Liang He","orcid":"https://orcid.org/0000-0002-5279-0097","observed_orcids":["https://orcid.org/0000-0002-5279-0097"]},"institutions":[{"id":"https://openalex.org/I4210140493","display_name":"Collaborative Innovation Center of Advanced Microstructures","ror":"https://ror.org/04ttadj76","country_code":"CN","type":"facility","lineage":["https://openalex.org/I126520041","https://openalex.org/I183067930","https://openalex.org/I19820366","https://openalex.org/I24943067","https://openalex.org/I2802624667","https://openalex.org/I4210140493","https://openalex.org/I76130692","https://openalex.org/I881766915"]},{"id":"https://openalex.org/I4391768004","display_name":"National Laboratory of Solid State Microstructures","ror":"https://ror.org/05ryc2b20","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4391768004","https://openalex.org/I881766915"]},{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Liang He","raw_affiliation_strings":["National Laboratory of Solid-state Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China"],"raw_orcid":"https://orcid.org/0000-0002-5279-0097","affiliations":[{"raw_affiliation_string":"National Laboratory of Solid-state Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China","institution_ids":["https://openalex.org/I4210140493","https://openalex.org/I4391768004","https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015066510","display_name":"Jun Gou","orcid":"https://orcid.org/0009-0004-8422-1421","observed_orcids":["https://orcid.org/0009-0004-8422-1421","https://orcid.org/0000-0002-8017-9287"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Gou","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100458479","display_name":"Xinran Wang","orcid":"https://orcid.org/0000-0002-3975-1667","observed_orcids":["https://orcid.org/0000-0002-3975-1667","https://orcid.org/0000-0001-8975-5626","https://orcid.org/0000-0002-4529-874X"]},"institutions":[{"id":"https://openalex.org/I4210140493","display_name":"Collaborative Innovation Center of Advanced Microstructures","ror":"https://ror.org/04ttadj76","country_code":"CN","type":"facility","lineage":["https://openalex.org/I126520041","https://openalex.org/I183067930","https://openalex.org/I19820366","https://openalex.org/I24943067","https://openalex.org/I2802624667","https://openalex.org/I4210140493","https://openalex.org/I76130692","https://openalex.org/I881766915"]},{"id":"https://openalex.org/I4391768004","display_name":"National Laboratory of Solid State Microstructures","ror":"https://ror.org/05ryc2b20","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4391768004","https://openalex.org/I881766915"]},{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinran Wang","raw_affiliation_strings":["National Laboratory of Solid-state Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China"],"raw_orcid":"https://orcid.org/0000-0002-3975-1667","affiliations":[{"raw_affiliation_string":"National Laboratory of Solid-state Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China","institution_ids":["https://openalex.org/I4210140493","https://openalex.org/I4391768004","https://openalex.org/I881766915"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100384893","display_name":"Jun Wang","orcid":"https://orcid.org/0000-0003-2370-2964","observed_orcids":["https://orcid.org/0000-0003-2370-2964"]},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jun Wang","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China"],"raw_orcid":"https://orcid.org/0000-0003-2370-2964","affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711"]},{"raw_affiliation_string":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China","institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5062604912","https://openalex.org/A5100384893"],"corresponding_institution_ids":["https://openalex.org/I150229711","https://openalex.org/I4210140493","https://openalex.org/I4391767659","https://openalex.org/I4391768004","https://openalex.org/I881766915"],"apc_list":{"value":5000,"currency":"USD","value_usd":5000},"apc_paid":null,"fwci":5.041,"has_fulltext":false,"cited_by_count":93,"citation_normalized_percentile":{"value":0.96988169,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":"16","issue":"3","first_page":"4851","last_page":"4860"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.5644999742507935,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.5644999742507935,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10657","display_name":"Topological Materials and Phenomena","score":0.26420000195503235,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.13930000364780426,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bismuth-telluride","display_name":"Bi2Te3","score":0.9039999842643738},{"id":"https://openalex.org/keywords/topological-insulators","display_name":"topological insulators","score":0.8569999933242798},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.8870000243186951},{"id":"https://openalex.org/keywords/monolayer-graphene","display_name":"monolayer graphene","score":0.7929999828338623},{"id":"https://openalex.org/keywords/heterojunction-photodetectors","display_name":"heterojunction photodetectors","score":0.9390000104904175},{"id":"https://openalex.org/keywords/broadband-photodetection","display_name":"broadband photodetection","score":0.8629999756813049},{"id":"https://openalex.org/keywords/mid-infrared-photodetection","display_name":"mid-infrared photodetection","score":0.8550000190734863},{"id":"https://openalex.org/keywords/gaas-substrate","display_name":"GaAs substrate","score":0.6570000052452087},{"id":"https://openalex.org/keywords/charge-collection","display_name":"charge collection","score":0.746999979019165},{"id":"https://openalex.org/keywords/specific-detectivity","display_name":"detectivity","score":0.7210000157356262},{"id":"https://openalex.org/keywords/uncooled-focal-plane-array","display_name":"uncooled focal plane array","score":0.8019999861717224},{"id":"https://openalex.org/keywords/infrared-communication","display_name":"infrared communication","score":0.9129999876022339}],"concepts":[{"id":"https://openalex.org/C85604662","wikidata":"https://www.wikidata.org/wiki/Q7187735","display_name":"Photodetection","level":3,"score":0.8811582326889038},{"id":"https://openalex.org/C128911142","wikidata":"https://www.wikidata.org/wiki/Q1488689","display_name":"Topological insulator","level":2,"score":0.7825627326965332},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7318753004074097},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7301856279373169},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6511908769607544},{"id":"https://openalex.org/C30080830","wikidata":"https://www.wikidata.org/wiki/Q169917","display_name":"Graphene","level":2,"score":0.5937300324440002},{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.5794459581375122},{"id":"https://openalex.org/C158355884","wikidata":"https://www.wikidata.org/wiki/Q11388","display_name":"Infrared","level":2,"score":0.47136011719703674},{"id":"https://openalex.org/C2777038907","wikidata":"https://www.wikidata.org/wiki/Q415256","display_name":"Bismuth telluride","level":4,"score":0.41579437255859375},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.31777477264404297},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.28943172097206116},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14182442426681519},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.07123622298240662},{"id":"https://openalex.org/C207365445","wikidata":"https://www.wikidata.org/wiki/Q15020929","display_name":"Thermoelectric materials","level":3,"score":0.0700145959854126},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1021/acsnano.2c00435","doi":"https://doi.org/10.1021/acsnano.2c00435","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsnano.2c00435","pdf_url":null,"source":{"id":"https://openalex.org/S145476921","display_name":"ACS Nano","issn_l":"1936-0851","issn":["1936-0851","1936-086X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","doyens","jufo-3","ki-jl-3","medline","norway-2","poland-200","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Nano","raw_type":"journal-article"},{"id":"pmid:35274530","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/35274530","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS nano","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1112303150","display_name":null,"funder_award_id":"62104026","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2061094933","display_name":null,"funder_award_id":"61922022","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5954754896","display_name":null,"funder_award_id":"61875031","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G838554860","display_name":null,"funder_award_id":"62175026","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":47,"referenced_works":["https://openalex.org/W1827066845","https://openalex.org/W2018230829","https://openalex.org/W2068519631","https://openalex.org/W2344249301","https://openalex.org/W2398767383","https://openalex.org/W2499943072","https://openalex.org/W2592055092","https://openalex.org/W2604417119","https://openalex.org/W2647853449","https://openalex.org/W2768537010","https://openalex.org/W2789137810","https://openalex.org/W2789817852","https://openalex.org/W2891852731","https://openalex.org/W2905572023","https://openalex.org/W2937500539","https://openalex.org/W2955515893","https://openalex.org/W2964322398","https://openalex.org/W2965064375","https://openalex.org/W2977447012","https://openalex.org/W2987949050","https://openalex.org/W2996096473","https://openalex.org/W2999085703","https://openalex.org/W3000695351","https://openalex.org/W3003011061","https://openalex.org/W3003303301","https://openalex.org/W3003705638","https://openalex.org/W3007091901","https://openalex.org/W3015633841","https://openalex.org/W3021389876","https://openalex.org/W3026432790","https://openalex.org/W3037203463","https://openalex.org/W3038198807","https://openalex.org/W3039331093","https://openalex.org/W3044886852","https://openalex.org/W3088907896","https://openalex.org/W3097743948","https://openalex.org/W3106150808","https://openalex.org/W3119404255","https://openalex.org/W3135893449","https://openalex.org/W3156109352","https://openalex.org/W3162962551","https://openalex.org/W3183493700","https://openalex.org/W3185252645","https://openalex.org/W3194373037","https://openalex.org/W3216608990","https://openalex.org/W4205571337","https://openalex.org/W4248214598"],"related_works":["https://openalex.org/W2905572023","https://openalex.org/W3016806994","https://openalex.org/W4404599301","https://openalex.org/W1827066845","https://openalex.org/W4394954768","https://openalex.org/W2344249301","https://openalex.org/W7208765505","https://openalex.org/W3196370324","https://openalex.org/W7214336322","https://openalex.org/W7214051926"],"abstract_inverted_index":{"Three":[0],"dimensional":[1],"topological":[2,16,25,170,192],"insulators":[3],"have":[4],"a":[5,20,47,76,109,122,161,182,196],"thriving":[6],"application":[7,167],"prospect":[8,168],"in":[9,218],"broadband":[10,178,206],"photodetectors":[11],"due":[12,57],"to":[13,58,104,117,139,181,200],"the":[14,69,93,144,188,202],"possessed":[15],"quantum":[17,193],"states.":[18],"Herein,":[19],"large":[21],"area":[22],"and":[23,88,121,153],"uniform":[24],"insulator":[26,171],"bismuth":[27],"telluride":[28],"(Bi":[29],"2":[30,72,78,149,173],"Te":[31,73,79,150,174],"3":[32,74,80,151,175],")":[33,115],"layer":[34],"with":[35,108,195],"high":[36,110],"crystalline":[37],"quality":[38],"is":[39],"directly":[40],"epitaxial":[41],"grown":[42],"on":[43,68],"GaAs(111)B":[44],"wafer":[45],"using":[46],"molecular":[48],"beam":[49],"epitaxy":[50],"process,":[51],"ensuring":[52],"efficient":[53],"out-of-plane":[54],"carriers":[55],"transportation":[56],"reduced":[59],"interface":[60],"defects":[61],"influence.":[62],"By":[63],"tiling":[64],"monolayer":[65],"graphene":[66,159],"(Gr)":[67],"as-prepared":[70],"Bi":[71,148,172],"layer,":[75],"Gr/Bi":[77],"/GaAs":[81,152],"heterojunction":[82],"array":[83,91,213],"prototype":[84],"was":[85],"further":[86],"fabricated,":[87],"our":[89],"photodetector":[90],"exhibited":[92],"capability":[94],"of":[95,147,169,190,205],"sensing":[96],"ultrabroad":[97],"photodetection":[98,179,207],"wavebands":[99],"from":[100],"visible":[101],"(405":[102],"nm)":[103],"mid-infrared":[105,183],"(4.5":[106],"\u03bcm)":[107],"specific":[111],"detectivity":[112],"(":[113],"D*":[114],"up":[116,180],"10":[118],"12":[119],"Jones":[120],"fast":[123],"response":[124],"speed":[125],"at":[126,129,143],"about":[127],"microseconds":[128],"room":[130],"temperature.":[131],"The":[132],"enhanced":[133,140],"device":[134],"performance":[135],"can":[136],"be":[137],"attributed":[138],"light\u2013matter":[141],"interaction":[142],"high-quality":[145],"heterointerface":[146],"improved":[154],"carrier":[155],"collection":[156,163],"efficiency":[157],"through":[158],"as":[160],"charge":[162],"medium,":[164],"indicating":[165],"an":[166],"for":[176,209],"fast-speed":[177],"waveband.":[184],"This":[185],"work":[186],"demonstrated":[187],"potential":[189],"integrated":[191],"materials":[194],"conventional":[197],"functional":[198],"substrate":[199],"fabricate":[201],"next":[203],"generation":[204],"devices":[208],"uncooled":[210],"focal":[211],"plane":[212],"or":[214],"infrared":[215],"communication":[216],"systems":[217],"future.":[219]},"counts_by_year":[{"year":2026,"cited_by_count":19},{"year":2025,"cited_by_count":19},{"year":2024,"cited_by_count":33},{"year":2023,"cited_by_count":13},{"year":2022,"cited_by_count":9}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2022-04-03T00:00:00"}