{"id":"https://openalex.org/W4213097255","doi":"https://doi.org/10.1021/acsaelm.1c01219","title":"Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application","display_name":"Impact of the Barrier Layer on the High Thermal and Mechanical Stability of a Flexible Resistive Memory in a Neural Network Application","publication_year":2022,"publication_date":"2022-02-21","ids":{"openalex":"https://openalex.org/W4213097255","doi":"https://doi.org/10.1021/acsaelm.1c01219"},"language":"en","primary_location":{"id":"doi:10.1021/acsaelm.1c01219","doi":"https://doi.org/10.1021/acsaelm.1c01219","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsaelm.1c01219","pdf_url":null,"source":{"id":"https://openalex.org/S4210217399","display_name":"ACS Applied Electronic Materials","issn_l":"2637-6113","issn":["2637-6113"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-20","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Electronic Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012961833","display_name":"Parthasarathi Pal","orcid":"https://orcid.org/0000-0002-4888-9596","observed_orcids":["https://orcid.org/0000-0002-4888-9596"]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Parthasarathi Pal","raw_affiliation_strings":["Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086481208","display_name":"Soumen Mazumder","orcid":"https://orcid.org/0000-0002-4386-4752","observed_orcids":["https://orcid.org/0000-0002-4386-4752"]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Soumen Mazumder","raw_affiliation_strings":["Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103866534","display_name":"Chih-Wei Huang","orcid":"https://orcid.org/0009-0003-3131-3640","observed_orcids":["https://orcid.org/0009-0003-3131-3640","https://orcid.org/0009-0004-6325-2026"]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Wei Huang","raw_affiliation_strings":["Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038947493","display_name":"Darsen D. Lu","orcid":"https://orcid.org/0000-0002-1956-6093","observed_orcids":["https://orcid.org/0000-0002-1956-6093"]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Darsen D. Lu","raw_affiliation_strings":["Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan"],"raw_orcid":"https://orcid.org/0000-0002-1956-6093","affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077399544","display_name":"Yeong\u2010Her Wang","orcid":"https://orcid.org/0000-0003-3796-923X","observed_orcids":["https://orcid.org/0000-0003-3796-923X","https://orcid.org/0000-0002-5898-7229","https://orcid.org/0000-0002-7865-7446"]},"institutions":[{"id":"https://openalex.org/I91807558","display_name":"National Cheng Kung University","ror":"https://ror.org/01b8kcc49","country_code":"TW","type":"education","lineage":["https://openalex.org/I91807558"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Yeong-Her Wang","raw_affiliation_strings":["Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan"],"raw_orcid":"https://orcid.org/0000-0003-3796-923X","affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan City 70101, Taiwan","institution_ids":["https://openalex.org/I91807558"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5077399544"],"corresponding_institution_ids":["https://openalex.org/I91807558"],"apc_list":{"value":5000,"currency":"USD","value_usd":5000},"apc_paid":null,"fwci":0.6812,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.61050084,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":98},"biblio":{"volume":"4","issue":"3","first_page":"1072","last_page":"1081"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/artificial-synapses","display_name":"artificial synapses","score":0.7310000061988831},{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.6840000152587891},{"id":"https://openalex.org/keywords/high-k-dielectrics","display_name":"high-k dielectrics","score":0.7429999709129333},{"id":"https://openalex.org/keywords/cmos-compatible-fabrication","display_name":"CMOS-compatible fabrication","score":0.6510000228881836},{"id":"https://openalex.org/keywords/multi-level-cell","display_name":"multi-level cell","score":0.7680000066757202},{"id":"https://openalex.org/keywords/neuromorphic-hardware","display_name":"neuromorphic hardware","score":0.7269999980926514},{"id":"https://openalex.org/keywords/neural-network","display_name":"artificial neural networks","score":0.7429999709129333},{"id":"https://openalex.org/keywords/mechanical-stability","display_name":"mechanical stability","score":0.7870000004768372},{"id":"https://openalex.org/keywords/bending-stress","display_name":"bending stress","score":0.6370000243186951},{"id":"https://openalex.org/keywords/schottky-emission","display_name":"Schottky emission","score":0.8539999723434448},{"id":"https://openalex.org/keywords/hopping-conduction","display_name":"hopping conduction","score":0.9909999966621399},{"id":"https://openalex.org/keywords/conductance-variation","display_name":"conductance variation","score":0.7739999890327454},{"id":"https://openalex.org/keywords/wearable-electronics","display_name":"wearable electronics","score":0.5419999957084656}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.8112738132476807},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6596300005912781},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.5916061997413635},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.5725262761116028},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.5640645027160645},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5414043664932251},{"id":"https://openalex.org/C6899612","wikidata":"https://www.wikidata.org/wiki/Q852911","display_name":"Resistive touchscreen","level":2,"score":0.5369322896003723},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.49892401695251465},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.4883884787559509},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44949835538864136},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.4494952857494354},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.366357684135437},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.364430695772171},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3273417055606842},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.17133724689483643},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.16988036036491394},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15326043963432312},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09363403916358948},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09096989035606384},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1021/acsaelm.1c01219","doi":"https://doi.org/10.1021/acsaelm.1c01219","is_oa":false,"landing_page_url":"https://doi.org/10.1021/acsaelm.1c01219","pdf_url":null,"source":{"id":"https://openalex.org/S4210217399","display_name":"ACS Applied Electronic Materials","issn_l":"2637-6113","issn":["2637-6113"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-20","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320006","host_organization_name":"American Chemical Society","host_organization_lineage":["https://openalex.org/P4310320006"],"host_organization_lineage_names":["American Chemical Society"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ACS Applied Electronic Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G4910492332","display_name":"Artificial Neurons Emulate Workings of Human Sensory Nerve","funder_award_id":"MOST108-2221-E006-040-MY3","funder_id":"https://openalex.org/F4320322795","funder_display_name":"Ministry of Science and Technology, Taiwan"}],"funders":[{"id":"https://openalex.org/F4320322795","display_name":"Ministry of Science and Technology, Taiwan","ror":"https://ror.org/02kv4zf79"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":56,"referenced_works":["https://openalex.org/W1497334427","https://openalex.org/W1508018340","https://openalex.org/W1833852352","https://openalex.org/W1992109034","https://openalex.org/W2008573772","https://openalex.org/W2016123525","https://openalex.org/W2025000293","https://openalex.org/W2040687898","https://openalex.org/W2050523653","https://openalex.org/W2055087661","https://openalex.org/W2066365289","https://openalex.org/W2117422822","https://openalex.org/W2138571708","https://openalex.org/W2148251150","https://openalex.org/W2167342413","https://openalex.org/W2171888576","https://openalex.org/W2490765418","https://openalex.org/W2586625851","https://openalex.org/W2592713387","https://openalex.org/W2605604423","https://openalex.org/W2605663629","https://openalex.org/W2724917037","https://openalex.org/W2737711638","https://openalex.org/W2751072639","https://openalex.org/W2757201101","https://openalex.org/W2770029532","https://openalex.org/W2777572289","https://openalex.org/W2783053830","https://openalex.org/W2793181810","https://openalex.org/W2795837079","https://openalex.org/W2805362231","https://openalex.org/W2808480882","https://openalex.org/W2895329179","https://openalex.org/W2901020704","https://openalex.org/W2901527199","https://openalex.org/W2913347375","https://openalex.org/W2926902100","https://openalex.org/W2945478537","https://openalex.org/W2948583149","https://openalex.org/W2951179131","https://openalex.org/W2954314603","https://openalex.org/W2967185691","https://openalex.org/W2974811846","https://openalex.org/W2975491264","https://openalex.org/W3034386250","https://openalex.org/W3035940873","https://openalex.org/W3035964902","https://openalex.org/W3036317882","https://openalex.org/W3047516857","https://openalex.org/W3080188993","https://openalex.org/W3138529409","https://openalex.org/W3163539738","https://openalex.org/W3166514834","https://openalex.org/W3175151845","https://openalex.org/W3185262813","https://openalex.org/W4200430984"],"related_works":["https://openalex.org/W7128469508","https://openalex.org/W7133321266","https://openalex.org/W4285049268","https://openalex.org/W4413157393","https://openalex.org/W4403827238","https://openalex.org/W4321098593","https://openalex.org/W4415332209","https://openalex.org/W2803348763","https://openalex.org/W4225550226","https://openalex.org/W4297094404"],"abstract_inverted_index":{"An":[0],"artificial":[1,78],"synaptic":[2],"device":[3,75,82,119,149,179,217,241,261],"with":[4,101,222,246,283,296],"continuous":[5],"conductance":[6,233],"variation":[7,104,234],"is":[8,25,35],"essential":[9],"for":[10,126,139,153,166],"the":[11,30,38,45,56,167,178,186,194,199,209,216,219,226,230,240,254,258,303,310],"hardware":[12],"implementation":[13,168],"of":[14,37,58,95,169,198,232,278,299,305],"bioinspired":[15],"neuromorphic":[16],"systems.":[17],"With":[18],"increasing":[19],"technological":[20],"advancement,":[21],"wearable":[22],"flexible":[23,42,70],"technology":[24,43],"gaining":[26],"enormous":[27],"importance":[28],"in":[29,41,76,158,177,218],"research":[31],"community.":[32],"High":[33],"temperature":[34,245],"one":[36],"key":[39],"issues":[40],"from":[44],"fabrication":[46],"and":[47,123,132,162,190,228,235,252],"applicability":[48],"aspects.":[49],"In":[50],"this":[51],"work,":[52],"we":[53],"have":[54,214],"demonstrated":[55],"performance":[57],"a":[59,243,247,269,297],"complementary":[60],"metal\u2013oxide\u2013semiconductor":[61],"(CMOS)-compatible":[62],"high-":[63],"k":[64],"material":[65],"(HfO":[66],"2":[67],")":[68,94],"based":[69],"heterogeneous":[71],"stacked":[72],"resistive":[73],"switching":[74],"an":[77,84,102,264,284],"neural":[79,220,289],"network.":[80],"The":[81,118,148,174,260,288],"exhibited":[83],"excellent":[85,121,265],"memory":[86,286],"window":[87],"(":[88,273],"I":[89,92],"ON":[90],"/":[91],"OFF":[93],"around":[96],"1.2":[97],"\u00d7":[98,109],"10":[99,110,142,280],"4":[100,143,281],"ultralow":[103],"(\u03c3":[105],"HRS":[106],"\u223c":[107],"3.95":[108],"\u201310":[111],"S)":[112],"at":[113,136,185,193,208,242],"500":[114,129],"\u03bcA":[115],"current":[116],"compliance.":[117],"shows":[120],"mechanical":[122,266,307],"electrical":[124],"stability":[125,267],"more":[127,140],"than":[128,141],"DC":[130],"cycles":[131],"data":[133,171],"retention":[134],"capability":[135],"120":[137],"\u00b0C":[138],"s":[144,282],"without":[145],"any":[146],"degradation.":[147],"can":[150,163],"be":[151,164],"used":[152],"multilevel":[154],"cell":[155],"(MLC)":[156],"operation":[157],"six":[159],"distinct":[160],"states":[161],"useful":[165],"2-bit":[170],"storage":[172],"applications.":[173],"conduction":[175,192,205],"mechanism":[176],"was":[180,206,291],"dominated":[181],"by":[182],"Schottky":[183],"emission":[184],"lower":[187],"field":[188,196],"region":[189,197],"hopping":[191],"higher":[195],"high-resistance":[200],"state":[201,211],"(HRS),":[202],"whereas":[203],"ohmic":[204],"satisfied":[207],"low-resistance":[210],"(LRS).":[212],"We":[213,238],"trained":[215,239],"network":[221],"96.07%":[223],"accuracy":[224,251,255,290],"as":[225],"baseline":[227],"observed":[229,253],"effect":[231,304],"high-temperature":[236],"operation.":[237],"high":[244],"95.68%":[248],"off-chip":[249,311],"training":[250],"profile":[256],"throughout":[257],"time.":[259],"also":[262],"possessed":[263],"under":[268],"long-term":[270,306],"bending":[271],"stress":[272,308],"r":[274],"=":[275],"8":[276],"mm)":[277],"over":[279],"intact":[285],"window.":[287],"measured":[292],"every":[293],"30":[294],"min":[295],"maximum":[298],"96.01%":[300],"to":[301],"observe":[302],"on":[309],"learning":[312],"process.":[313]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":3}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2022-02-24T00:00:00"}