{"id":"https://openalex.org/W357049581","doi":"https://doi.org/10.7567/ssdm.2006.p-3-3","title":"Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Simulation, Size Dependence, and Hot Carrier Stress","display_name":"Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses: Mobility, Simulation, Size Dependence, and Hot Carrier Stress","publication_year":2007,"publication_date":"2007-09-18","ids":{"openalex":"https://openalex.org/W357049581","doi":"https://doi.org/10.7567/ssdm.2006.p-3-3","mag":"357049581"},"language":"en","primary_location":{"id":"doi:10.7567/ssdm.2006.p-3-3","doi":"https://doi.org/10.7567/ssdm.2006.p-3-3","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2006.p-3-3","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"},"volume":null,"type":"conference-abstract","is_traditional":false,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038015120","display_name":"Yao\u2010Jen Lee","orcid":"https://orcid.org/0000-0001-9643-111X","observed_orcids":["https://orcid.org/0000-0001-9643-111X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yao-Jen Lee","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045358417","display_name":"Chia-Hao Fan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chia-Hao Fan","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080799147","display_name":"Wenyan Lin","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wen-Yan Lin","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111992436","display_name":"Chia-Chen Wan","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Chia-Chen Wan","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020142698","display_name":"Bohr\u2010Ran Huang","orcid":"https://orcid.org/0000-0001-9187-9177","observed_orcids":["https://orcid.org/0000-0001-9187-9177"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Bohr-Ran Huang","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073705069","display_name":"Wen\u2010Luh Yang","orcid":"https://orcid.org/0000-0003-0173-878X","observed_orcids":["https://orcid.org/0000-0003-0173-878X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wen-Luh Yang","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077512848","display_name":"Tien\u2010Sheng Chao","orcid":"https://orcid.org/0000-0001-9618-207X","observed_orcids":["https://orcid.org/0000-0001-9618-207X"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tien-Sheng Chao","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5111702974","display_name":"Der-San Chuu","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D. S.Chuu","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.989300012588501,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.989300012588501,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.008899999782443047,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/n-mosfet","display_name":"nMOSFET","score":0.8560000061988831},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.8489999771118164},{"id":"https://openalex.org/keywords/device-size-dependence","display_name":"device size dependence","score":0.7480000257492065},{"id":"https://openalex.org/keywords/hot-carrier-stress","display_name":"hot carrier stress","score":0.9829999804496765},{"id":"https://openalex.org/keywords/device-simulation","display_name":"device simulation","score":0.6169999837875366}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9115647077560425},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6809602379798889},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6026749014854431},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6013265252113342},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.5815233588218689},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.5637990236282349},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5438390970230103},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.24745213985443115},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2059471607208252},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16822853684425354},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05297243595123291},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.04582253098487854},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/ssdm.2006.p-3-3","doi":"https://doi.org/10.7567/ssdm.2006.p-3-3","is_oa":false,"landing_page_url":"https://doi.org/10.7567/ssdm.2006.p-3-3","pdf_url":null,"source":{"id":"https://openalex.org/S4306510274","display_name":"International Conference on Solid State Devices and Materials (SSDM)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2064286406","https://openalex.org/W2182080637","https://openalex.org/W1965073548","https://openalex.org/W2313403463","https://openalex.org/W2313083059","https://openalex.org/W7221178345","https://openalex.org/W2108386523","https://openalex.org/W2061064090","https://openalex.org/W2470592457","https://openalex.org/W2547961720"],"abstract_inverted_index":{"2006":[0],"International":[1],"Conference":[2],"on":[3],"Solid":[4],"State":[5],"Devices":[6],"and":[7,16,25],"Materials,Local":[8],"Strained":[9],"Channel":[10],"nMOSFETs":[11],"by":[12],"Different":[13],"Poly-Si":[14],"Gate":[15],"SiN":[17],"Capping":[18],"Layer":[19],"Thicknesses:":[20],"Mobility,":[21],"Simulation,":[22],"Size":[23],"Dependence,":[24],"Hot":[26],"Carrier":[27],"Stress":[28]},"counts_by_year":[],"updated_date":"2026-10-05T09:50:58.205359","created_date":"2016-06-24T00:00:00"}