{"id":"https://openalex.org/W35474233","doi":null,"title":"Low-dielectric constant materials 3. Materials Research Society symposium proceedings Volume 476","display_name":"Low-dielectric constant materials 3. Materials Research Society symposium proceedings Volume 476","publication_year":1997,"publication_date":"1997-07-01","ids":{"openalex":"https://openalex.org/W35474233","mag":"35474233"},"language":"en","primary_location":{"id":"mag:35474233","doi":null,"is_oa":false,"landing_page_url":"http://www.osti.gov/scitech/biblio/20013775","pdf_url":null,"source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null},"volume":null,"type":"article","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111470550","display_name":"C. Case","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Case","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051789763","display_name":"Paul A. Kohl","orcid":"https://orcid.org/0000-0001-6267-3647","observed_orcids":["https://orcid.org/0000-0001-6267-3647"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Paul A. Kohl","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0001-6267-3647","affiliations":[]},{"author_position":"middle","author":{"id":null,"display_name":"T. Kikkawa","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Kikkawa","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5057393747","display_name":"W.W. Lee","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"W.W. Lee","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3038,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.46132493,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12084","display_name":"Synthesis and properties of polymers","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/low-k-dielectrics","display_name":"low-k dielectrics","score":0.9710000157356262},{"id":"https://openalex.org/keywords/interconnect-delay","display_name":"interconnect delay","score":0.7720000147819519},{"id":"https://openalex.org/keywords/interconnect-capacitance","display_name":"interconnect capacitance","score":0.9340000152587891},{"id":"https://openalex.org/keywords/integrated-circuits","display_name":"integrated circuits","score":0.7649999856948853},{"id":"https://openalex.org/keywords/silicon-dioxide-replacement","display_name":"silicon dioxide replacement","score":0.7049999833106995},{"id":"https://openalex.org/keywords/porous-dielectrics","display_name":"porous dielectrics","score":0.8289999961853027},{"id":"https://openalex.org/keywords/organic-dielectrics","display_name":"organic dielectrics","score":0.7450000047683716},{"id":"https://openalex.org/keywords/polyimide","display_name":"polyimide","score":0.9909999966621399},{"id":"https://openalex.org/keywords/dielectric-interfaces","display_name":"dielectric interfaces","score":0.699999988079071},{"id":"https://openalex.org/keywords/dielectric-characterization","display_name":"dielectric characterization","score":0.8840000033378601}],"concepts":[{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6707011461257935},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.6677623987197876},{"id":"https://openalex.org/C116372231","wikidata":"https://www.wikidata.org/wiki/Q605757","display_name":"Copper interconnect","level":3,"score":0.5953884720802307},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5782016515731812},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.5541031360626221},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.5266133546829224},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.5052013993263245},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5017433166503906},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.4384618401527405},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.43017634749412537},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3898615837097168},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38052627444267273},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3360680043697357},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29812687635421753},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24784252047538757},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1770082712173462},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14129483699798584},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"mag:35474233","doi":null,"is_oa":false,"landing_page_url":"http://www.osti.gov/scitech/biblio/20013775","pdf_url":null,"source":{"id":"https://openalex.org/S4306402487","display_name":"OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I139351228","host_organization_name":"Office of Scientific and Technical Information","host_organization_lineage":["https://openalex.org/I139351228"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W2025286409","https://openalex.org/W2079579416","https://openalex.org/W2124556602","https://openalex.org/W2136051149","https://openalex.org/W2148337554","https://openalex.org/W2579974238","https://openalex.org/W2614408802","https://openalex.org/W2797682117","https://openalex.org/W2902079192","https://openalex.org/W2969975517"],"related_works":["https://openalex.org/W569275756","https://openalex.org/W2161184002","https://openalex.org/W1043417534","https://openalex.org/W1898734385","https://openalex.org/W2014594404","https://openalex.org/W2026790479","https://openalex.org/W1651309948","https://openalex.org/W631927588","https://openalex.org/W2067271324","https://openalex.org/W2143697567"],"abstract_inverted_index":{"Continuing":[0],"improvement":[1],"of":[2,11,43,52,109,121,127,145],"integrated":[3],"circuits":[4],"(ICs)":[5],"critically":[6],"depends":[7],"on":[8,66,150],"the":[9,18,34,105,125,132,143,151],"use":[10],"nonconventional":[12],"materials.":[13,47],"Interconnect":[14],"delay":[15,28],"is":[16,38,55,62],"already":[17],"most":[19,24],"severe":[20],"limiting":[21],"factor":[22],"in":[23,134,142],"advanced":[25],"ICs.":[26],"This":[27,130],"can":[29],"be":[30,70,102],"minimized":[31],"by":[32,40],"reducing":[33],"interconnect":[35,122,128],"capacitance,":[36],"which":[37],"determined":[39],"a":[41,49,93,116,135],"combination":[42],"process":[44],"architecture":[45],"and":[46,124,157,161,165,171],"While":[48],"broad":[50],"range":[51],"candidate":[53],"materials":[54,123],"being":[56],"explored":[57],"for":[58,118],"IC":[59,110],"application,":[60],"there":[61,113],"no":[63],"clear":[64],"consensus":[65],"what":[67],"material":[68],"will":[69],"used":[71],"to":[72,92,148],"replace":[73],"SiO{sub":[74],"2}.":[75],"Process":[76],"architectures":[77],"are":[78],"also":[79],"unsettled,":[80],"with":[81],"various":[82],"efforts":[83],"directed":[84],"at":[85],"either":[86],"evolving":[87],"present-day":[88],"technology":[89],"or":[90],"switching":[91],"damascene":[94],"metal":[95],"approach.":[96],"yet":[97],"these":[98],"processes":[99],"may":[100],"not":[101],"scaleable":[103],"beyond":[104],"0.15":[106],"{micro}m":[107],"generation":[108],"technology.":[111,129],"Thus,":[112],"still":[114],"exists":[115],"need":[117],"basic":[119],"understanding":[120],"limits":[126],"volume,":[131],"third":[133],"series":[136],"from":[137],"MRS,":[138],"brings":[139],"together":[140],"experts":[141],"field":[144],"low-k":[146],"dielectrics":[147],"focus":[149],"challenges":[152],"ahead.":[153],"Topics":[154],"include:":[155],"organic":[156],"inorganic":[158],"dielectrics;":[159],"interfaces":[160],"porous":[162],"materials;":[163,168],"measurement":[164],"characterization;":[166],"vapor-deposited":[167],"fluorinated":[169],"oxides":[170],"polyimides.":[172]},"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}