{"id":"https://openalex.org/W3211545154","doi":"https://doi.org/10.1016/j.fmre.2021.09.014","title":"Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications","display_name":"Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications","publication_year":2021,"publication_date":"2021-11-01","ids":{"openalex":"https://openalex.org/W3211545154","doi":"https://doi.org/10.1016/j.fmre.2021.09.014","mag":"3211545154"},"language":"en","primary_location":{"id":"doi:10.1016/j.fmre.2021.09.014","doi":"https://doi.org/10.1016/j.fmre.2021.09.014","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.fmre.2021.09.014","pdf_url":null,"source":{"id":"https://openalex.org/S4210177083","display_name":"Fundamental Research","issn_l":"2096-9457","issn":["2096-9457","2667-3258"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","ki-jl-1","norway-1","oarl","poland-20","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Fundamental Research","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"diamond","oa_url":"https://doi.org/10.1016/j.fmre.2021.09.014","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027044989","display_name":"Gaokai Wang","orcid":"https://orcid.org/0009-0004-3813-0748","observed_orcids":["https://orcid.org/0009-0004-3813-0748"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Gaokai Wang","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053231478","display_name":"Jingren Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingren Chen","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020243549","display_name":"Junhua Meng","orcid":"https://orcid.org/0000-0001-8952-3278","observed_orcids":["https://orcid.org/0000-0001-8952-3278"]},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Junhua Meng","raw_affiliation_strings":["Faculty of Science, Beijing University of Technology, Beijing 100124, China"],"raw_orcid":"https://orcid.org/0000-0001-8952-3278","affiliations":[{"raw_affiliation_string":"Faculty of Science, Beijing University of Technology, Beijing 100124, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082878744","display_name":"Zhigang Yin","orcid":"https://orcid.org/0000-0002-8385-7055","observed_orcids":["https://orcid.org/0000-0002-8385-7055"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhigang Yin","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050532927","display_name":"Ji Jiang","orcid":"https://orcid.org/0000-0002-7536-7507","observed_orcids":["https://orcid.org/0000-0002-7536-7507"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ji Jiang","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112528504","display_name":"Yan Tian","orcid":"https://orcid.org/0000-0002-2502-686X","observed_orcids":["https://orcid.org/0000-0002-2502-686X"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Tian","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101759430","display_name":"Jingzhen Li","orcid":"https://orcid.org/0000-0003-2807-424X","observed_orcids":["https://orcid.org/0000-0003-2807-424X"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingzhen Li","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100988927","display_name":"Jinliang Wu","orcid":"https://orcid.org/0000-0003-2353-3777","observed_orcids":["https://orcid.org/0000-0003-2353-3777"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinliang Wu","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100731311","display_name":"Peng Jin","orcid":"https://orcid.org/0000-0002-4440-5240","observed_orcids":["https://orcid.org/0000-0002-4440-5240"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peng Jin","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5028048375","display_name":"Xingwang Zhang","orcid":"https://orcid.org/0000-0001-7873-5566","observed_orcids":["https://orcid.org/0000-0001-7873-5566"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Xingwang Zhang","raw_affiliation_strings":["Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":"https://orcid.org/0000-0001-7873-5566","affiliations":[{"raw_affiliation_string":"Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5028048375"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210149211","https://openalex.org/I4210165038"],"apc_list":{"value":0,"currency":"USD","value_usd":0},"apc_paid":null,"fwci":2.2067,"has_fulltext":false,"cited_by_count":49,"citation_normalized_percentile":{"value":0.88789348,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":98,"max":99},"biblio":{"volume":"1","issue":"6","first_page":"677","last_page":"683"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11341","display_name":"Boron and Carbon Nanomaterials Research","score":0.7440999746322632,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11341","display_name":"Boron and Carbon Nanomaterials Research","score":0.7440999746322632,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.24539999663829803,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.004600000102072954,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hexagonal-boron-nitride","display_name":"hexagonal boron nitride","score":0.9959999918937683},{"id":"https://openalex.org/keywords/pulsed-laser-deposition","display_name":"pulsed laser deposition","score":0.8560000061988831},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.9020000100135803},{"id":"https://openalex.org/keywords/dielectric-substrate","display_name":"dielectric substrate","score":0.8820000290870667},{"id":"https://openalex.org/keywords/direct-growth","display_name":"direct growth","score":0.5429999828338623},{"id":"https://openalex.org/keywords/substrate-temperature","display_name":"substrate temperature","score":0.8040000200271606},{"id":"https://openalex.org/keywords/deposition-pressure","display_name":"deposition pressure","score":0.6439999938011169},{"id":"https://openalex.org/keywords/raman-linewidth","display_name":"Raman linewidth","score":0.6069999933242798},{"id":"https://openalex.org/keywords/crystalline-quality","display_name":"crystal quality","score":0.9259999990463257},{"id":"https://openalex.org/keywords/photodetectors","display_name":"photodetectors","score":0.8429999947547913},{"id":"https://openalex.org/keywords/deep-ultraviolet-detection","display_name":"deep ultraviolet detection","score":0.9210000038146973},{"id":"https://openalex.org/keywords/optoelectronic-devices","display_name":"optoelectronic devices","score":0.6399999856948853},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductors","display_name":"wide bandgap semiconductors","score":0.8899999856948853}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8661476373672485},{"id":"https://openalex.org/C37982897","wikidata":"https://www.wikidata.org/wiki/Q901321","display_name":"Pulsed laser deposition","level":3,"score":0.6832619905471802},{"id":"https://openalex.org/C40003534","wikidata":"https://www.wikidata.org/wiki/Q862228","display_name":"Raman spectroscopy","level":2,"score":0.6830609440803528},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6110966205596924},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.591183066368103},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5873838663101196},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5167540907859802},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5088937282562256},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.482543408870697},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.44491639733314514},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.41601309180259705},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.4068014621734619},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2958277761936188},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.16192692518234253},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/j.fmre.2021.09.014","doi":"https://doi.org/10.1016/j.fmre.2021.09.014","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.fmre.2021.09.014","pdf_url":null,"source":{"id":"https://openalex.org/S4210177083","display_name":"Fundamental Research","issn_l":"2096-9457","issn":["2096-9457","2667-3258"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","ki-jl-1","norway-1","oarl","poland-20","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Fundamental Research","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:4ebd785e6de740a1b5d331ed0c4573f9","doi":null,"is_oa":false,"landing_page_url":"https://doaj.org/article/4ebd785e6de740a1b5d331ed0c4573f9","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fundamental Research, Vol 1, Iss 6, Pp 677-683 (2021)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1016/j.fmre.2021.09.014","doi":"https://doi.org/10.1016/j.fmre.2021.09.014","is_oa":true,"landing_page_url":"https://doi.org/10.1016/j.fmre.2021.09.014","pdf_url":null,"source":{"id":"https://openalex.org/S4210177083","display_name":"Fundamental Research","issn_l":"2096-9457","issn":["2096-9457","2667-3258"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","ki-jl-1","norway-1","oarl","poland-20","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Fundamental Research","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G6131175760","display_name":null,"funder_award_id":"XDB43000000","funder_id":"https://openalex.org/F4320321133","funder_display_name":"Chinese Academy of Sciences"},{"id":"https://openalex.org/G6700084457","display_name":null,"funder_award_id":"61904174","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G717770948","display_name":null,"funder_award_id":"61674137","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8223871803","display_name":null,"funder_award_id":"4212045","funder_id":"https://openalex.org/F4320322919","funder_display_name":"Natural Science Foundation of Beijing Municipality"},{"id":"https://openalex.org/G8579890534","display_name":null,"funder_award_id":"61874106","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321133","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35"},{"id":"https://openalex.org/F4320322919","display_name":"Natural Science Foundation of Beijing Municipality","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":46,"referenced_works":["https://openalex.org/W1972488877","https://openalex.org/W1980486847","https://openalex.org/W1983177870","https://openalex.org/W1999928343","https://openalex.org/W2002839444","https://openalex.org/W2027207617","https://openalex.org/W2035446184","https://openalex.org/W2046261367","https://openalex.org/W2103165550","https://openalex.org/W2138752424","https://openalex.org/W2170539287","https://openalex.org/W2194534706","https://openalex.org/W2269429031","https://openalex.org/W2307933751","https://openalex.org/W2343920520","https://openalex.org/W2347100661","https://openalex.org/W2515650669","https://openalex.org/W2518194970","https://openalex.org/W2526563077","https://openalex.org/W2588623409","https://openalex.org/W2592411728","https://openalex.org/W2607432645","https://openalex.org/W2615815956","https://openalex.org/W2789132449","https://openalex.org/W2794134598","https://openalex.org/W2802264865","https://openalex.org/W2807258575","https://openalex.org/W2884024812","https://openalex.org/W2920797783","https://openalex.org/W2949198485","https://openalex.org/W2977036177","https://openalex.org/W2984989060","https://openalex.org/W3009864654","https://openalex.org/W3010249885","https://openalex.org/W3014997047","https://openalex.org/W3015821467","https://openalex.org/W3028306704","https://openalex.org/W3037237156","https://openalex.org/W3046456153","https://openalex.org/W3049332571","https://openalex.org/W3106152261","https://openalex.org/W3130081328","https://openalex.org/W3140210235","https://openalex.org/W3154826951","https://openalex.org/W3162743696","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W1900196670","https://openalex.org/W1983177870","https://openalex.org/W7143939064","https://openalex.org/W4308343106","https://openalex.org/W3179378677","https://openalex.org/W3154826951","https://openalex.org/W2528406885","https://openalex.org/W4387038286","https://openalex.org/W7111377775","https://openalex.org/W4210258639"],"abstract_inverted_index":{"Recently,":[0],"hexagonal":[1],"boron":[2],"nitride":[3],"(h-BN),":[4],"an":[5],"ultra-wide":[6],"bandgap":[7],"semiconductor,":[8],"has":[9,111],"attracted":[10],"considerable":[11],"attention":[12],"owing":[13],"to":[14],"its":[15],"excellent":[16],"properties.":[17],"In":[18,49],"thin":[19],"films":[20,39,60,91,163,197],"grown":[21,136],"on":[22,40,65,85,115,129,201],"metal":[23],"catalysts,":[24],"contamination":[25],"and":[26,82,123,180],"damage":[27],"induced":[28],"by":[29,68,95,198],"a":[30,62,141,152,170,181],"transfer":[31],"process":[32],"cannot":[33],"be":[34],"avoided.":[35],"Therefore,":[36],"synthesizing":[37],"h-BN":[38,59,90,121,134,162,196],"non-catalytic":[41],"dielectric":[42,202],"substrates":[43,67,203],"is":[44],"desirable":[45],"for":[46,204],"electronic":[47],"applications.":[48],"this":[50],"study,":[51],"we":[52],"demonstrate":[53],"the":[54,70,79,86,89,103,108,112,116,120,124,130,160,191],"direct":[55],"growth":[56,87,105],"of":[57,78,88,119,146,174,185,193],"high-quality":[58,195],"with":[61,169],"controllable":[63],"thickness":[64],"sapphire":[66],"using":[69],"pulsed":[71],"laser":[72,83],"deposition":[73,80],"(PLD)":[74],"technique.":[75],"The":[76,133,156],"effects":[77],"conditions":[81,139],"parameters":[84,106],"are":[92],"systematically":[93],"investigated":[94],"evaluating":[96],"their":[97],"characteristic":[98],"Raman":[99,143],"peaks":[100],".":[101,207],"Among":[102],"various":[104],"studied,":[107],"substrate":[109],"temperature":[110],"greatest":[113],"influence":[114],"crystalline":[117,154],"quality":[118],"films,":[122],"optimal":[125,138],"pressure":[126],"varies":[127],"depending":[128],"target-substrate":[131],"distance.":[132],"film":[135],"under":[137],"exhibits":[140],"narrow":[142],"line":[144],"width":[145],"\u223c30":[147],"cm":[148],"\u22121":[149],",":[150,177],"indicating":[151],"high":[153,178],"quality.":[155],"photodetectors":[157],"fabricated":[158],"from":[159],"PLD-grown":[161],"exhibit":[164],"superior":[165],"deep-ultraviolet":[166],"detection":[167],"performance":[168],"large":[171],"on/off":[172],"ratio":[173],">10":[175],"4":[176],"photoresponsivity,":[179],"sharp":[182],"cut-off":[183],"wavelength":[184],"220":[186],"nm.":[187],"This":[188],"study":[189],"presents":[190],"possibility":[192],"producing":[194],"applying":[199],"PLD":[200],"optoelectronic":[205],"applications":[206]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":13},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":14},{"year":2022,"cited_by_count":8}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2021-11-22T00:00:00"}