{"id":"https://openalex.org/W3210047568","doi":"https://doi.org/10.1109/tpel.2021.3123940","title":"2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2","display_name":"2.41 kV Vertical P-Nio/n-Ga 2 O 3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm 2","publication_year":2021,"publication_date":"2021-10-29","ids":{"openalex":"https://openalex.org/W3210047568","doi":"https://doi.org/10.1109/tpel.2021.3123940","mag":"3210047568"},"language":"en","primary_location":{"id":"doi:10.1109/tpel.2021.3123940","doi":"https://doi.org/10.1109/tpel.2021.3123940","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tpel.2021.3123940","pdf_url":null,"source":{"id":"https://openalex.org/S29875816","display_name":"IEEE Transactions on Power Electronics","issn_l":"0885-8993","issn":["0885-8993","1941-0107"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-200","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Power Electronics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114219926","display_name":"Yuan Wang","orcid":"https://orcid.org/0000-0002-4240-7875","observed_orcids":["https://orcid.org/0000-0002-4240-7875"]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuangang Wang","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":"https://orcid.org/0000-0002-4240-7875","affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005586952","display_name":"Hehe Gong","orcid":"https://orcid.org/0000-0002-0442-3057","observed_orcids":["https://orcid.org/0000-0002-0442-3057"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hehe Gong","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-0442-3057","affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014691101","display_name":"Yuanjie Lv","orcid":"https://orcid.org/0000-0002-9207-8344","observed_orcids":["https://orcid.org/0000-0002-9207-8344","https://orcid.org/0009-0002-8121-4387"]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuanjie Lv","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":"https://orcid.org/0000-0002-9207-8344","affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109340628","display_name":"Xingchang Fu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingchang Fu","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111882469","display_name":"Shaobo Dun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shaobo Dun","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104329302","display_name":"Tingting Han","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tingting Han","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029281566","display_name":"Hongyu Liu","orcid":"https://orcid.org/0000-0001-9801-3827","observed_orcids":["https://orcid.org/0000-0001-9801-3827"]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongyu Liu","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":"https://orcid.org/0000-0001-9801-3827","affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086466186","display_name":"Xingye Zhou","orcid":"https://orcid.org/0000-0002-3806-8647","observed_orcids":["https://orcid.org/0000-0002-3806-8647"]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingye Zhou","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":"https://orcid.org/0000-0002-3806-8647","affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020675415","display_name":"Shixiong Liang","orcid":"https://orcid.org/0000-0003-4336-3373","observed_orcids":["https://orcid.org/0000-0003-4336-3373"]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shixiong Liang","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":"https://orcid.org/0000-0003-4336-3373","affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101508855","display_name":"Jiandong Ye","orcid":"https://orcid.org/0000-0002-3985-6768","observed_orcids":["https://orcid.org/0000-0002-3985-6768"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiandong Ye","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":"https://orcid.org/0000-0002-3985-6768","affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100451810","display_name":"Rong Zhang","orcid":"https://orcid.org/0000-0003-0015-6331","observed_orcids":["https://orcid.org/0000-0003-0015-6331","https://orcid.org/0000-0002-9815-2832"]},"institutions":[{"id":"https://openalex.org/I881766915","display_name":"Nanjing University","ror":"https://ror.org/01rxvg760","country_code":"CN","type":"education","lineage":["https://openalex.org/I881766915"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Rong Zhang","raw_affiliation_strings":["School of Electronic Science and Engineering, Nanjing University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electronic Science and Engineering, Nanjing University, Nanjing, China","institution_ids":["https://openalex.org/I881766915"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066506435","display_name":"Aimin Bu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Aimin Bu","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034755241","display_name":"Shujun Cai","orcid":"https://orcid.org/0000-0001-6939-4237","observed_orcids":["https://orcid.org/0000-0001-6939-4237"]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shujun Cai","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":"https://orcid.org/0000-0001-6939-4237","affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100653899","display_name":"Zhihong Feng","orcid":"https://orcid.org/0000-0001-7275-8388","observed_orcids":["https://orcid.org/0000-0001-7275-8388"]},"institutions":[{"id":"https://openalex.org/I4210160974","display_name":"Hebei Semiconductor Research Institute","ror":"https://ror.org/050777m95","country_code":"CN","type":"facility","lineage":["https://openalex.org/I4210160974"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhihong Feng","raw_affiliation_strings":["National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China"],"raw_orcid":"https://orcid.org/0000-0001-7275-8388","affiliations":[{"raw_affiliation_string":"National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Hebei, China","institution_ids":["https://openalex.org/I4210160974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2045,"currency":"USD","value_usd":2045},"apc_paid":null,"fwci":6.4465,"has_fulltext":false,"cited_by_count":157,"citation_normalized_percentile":{"value":0.98260444,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":100},"biblio":{"volume":"37","issue":"4","first_page":"3743","last_page":"3746"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.8600000143051147},{"id":"https://openalex.org/keywords/baliga-s-figure-of-merit","display_name":"Baliga's figure of merit","score":0.8410000205039978},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.8629999756813049},{"id":"https://openalex.org/keywords/junction-termination-extension","display_name":"junction termination extension","score":0.7789999842643738},{"id":"https://openalex.org/keywords/specific-on-resistance","display_name":"specific on-resistance","score":0.9390000104904175},{"id":"https://openalex.org/keywords/high-voltage-power-devices","display_name":"high-voltage power devices","score":0.5839999914169312}],"concepts":[{"id":"https://openalex.org/C74575197","wikidata":"https://www.wikidata.org/wiki/Q9941","display_name":"Non-blocking I/O","level":3,"score":0.7147509455680847},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4698352515697479},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.40619197487831116},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.22944721579551697},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15270918607711792},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0727386474609375},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tpel.2021.3123940","doi":"https://doi.org/10.1109/tpel.2021.3123940","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tpel.2021.3123940","pdf_url":null,"source":{"id":"https://openalex.org/S29875816","display_name":"IEEE Transactions on Power Electronics","issn_l":"0885-8993","issn":["0885-8993","1941-0107"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-a","jufo-3","norway-2","poland-200","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Power Electronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.75}],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1594905984","https://openalex.org/W1692363615","https://openalex.org/W1993139043","https://openalex.org/W2121151410","https://openalex.org/W2143424362","https://openalex.org/W2406809365","https://openalex.org/W2509570769","https://openalex.org/W2594666775","https://openalex.org/W2616612514","https://openalex.org/W2775776374","https://openalex.org/W2786897995","https://openalex.org/W2794570013","https://openalex.org/W2801058708","https://openalex.org/W2803858421","https://openalex.org/W2893722168","https://openalex.org/W2913747835","https://openalex.org/W2915703467","https://openalex.org/W2964089346","https://openalex.org/W2971402788","https://openalex.org/W2985913482","https://openalex.org/W2991422026","https://openalex.org/W3000408756","https://openalex.org/W3008025124","https://openalex.org/W3023030850","https://openalex.org/W3036516792","https://openalex.org/W3042514039","https://openalex.org/W3096398835","https://openalex.org/W3120658637","https://openalex.org/W3138188852","https://openalex.org/W3164414943"],"related_works":["https://openalex.org/W3042514039","https://openalex.org/W4385077120","https://openalex.org/W3135295779","https://openalex.org/W4200248978","https://openalex.org/W4224044877","https://openalex.org/W3180965683","https://openalex.org/W4413320749","https://openalex.org/W3096398835","https://openalex.org/W3049937630","https://openalex.org/W4296880560"],"abstract_inverted_index":{"In":[0],"this":[1],"letter,":[2],"high-performance":[3],"p-NiO/\u03b2-Ga2O3heterojunction":[4],"diodes":[5],"(HJDs)":[6],"with":[7,92,113,134],"composite":[8,77,93,136],"terminal":[9,78,94,137],"structures,":[10],"a":[11,18,28,97,114,135,140],"p-NiO":[12,29,63],"junction":[13],"termination":[14],"extension":[15],"(JTE),":[16],"and":[17,44,142],"small-angle":[19,49],"beveled":[20],"field":[21,132],"plate":[22],"(BFP)":[23],"are":[24],"demonstrated.":[25],"By":[26],"implementing":[27],"JTE":[30],"structure,":[31],"the":[32,45,48,53,68,72,76,86,102,123,130,148],"optimal":[33],"breakdown":[34,54],"voltage":[35,55],"(Vbr)":[36],"of\u03b2-Ga2O3HJD":[37],"increases":[38],"from":[39],"955":[40],"to":[41,57,70,85,146],"1945":[42],"V,":[43],"integration":[46],"of":[47,116,122],"BFP":[50],"further":[51],"boosts":[52],"up":[56],"2410":[58],"V.":[59],"An":[60],"80-nm":[61],"thin":[62],"layer":[64],"is":[65,119,139],"adopted":[66],"in":[67],"heterojunction":[69],"reduce":[71],"specificon-resistance":[73],"(Ron,sp),":[74],"while":[75],"structures":[79,95],"have":[80],"little":[81],"effect":[82],"onRon,sp,":[83],"due":[84],"super-large":[87],"lateral":[88],"spread":[89],"resistance.":[90],"The\u03b2-Ga2O3HJD":[91],"achieves":[96],"lowRon,spof":[98],"1.12":[99],"m\u03a9\u00b7cm2,":[100],"yielding":[101],"highest":[103],"direct-current":[104],"Baliga's":[105],"figure-of-merit":[106],"(FOM":[107],"=Vbr2/Ron,sp)":[108],"among":[109],"all":[110],"reported":[111],"\u03b2-Ga2O3diodes":[112],"value":[115],"5.18":[117],"GW/cm2,which":[118],"about":[120],"15%":[121],"theoretical":[124],"value.":[125],"These":[126],"results":[127],"suggest":[128],"that":[129],"electrical":[131],"engineering":[133],"structure":[138],"viable":[141],"effective":[143],"technological":[144],"strategy":[145],"enable":[147],"realization":[149],"of\u03b2-Ga2O3bipolar":[150],"power":[151],"rectifiers.":[152]},"counts_by_year":[{"year":2026,"cited_by_count":19},{"year":2025,"cited_by_count":35},{"year":2024,"cited_by_count":34},{"year":2023,"cited_by_count":41},{"year":2022,"cited_by_count":27},{"year":2021,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2021-11-08T00:00:00"}