{"id":"https://openalex.org/W3191349600","doi":"https://doi.org/10.1116/6.0000993","title":"Direct-simulation Monte Carlo modeling of reactor-scale gas-dynamic phenomena in a multiwafer atomic-layer deposition batch reactor","display_name":"Direct-simulation Monte Carlo modeling of reactor-scale gas-dynamic phenomena in a multiwafer atomic-layer deposition batch reactor","publication_year":2021,"publication_date":"2021-08-05","ids":{"openalex":"https://openalex.org/W3191349600","doi":"https://doi.org/10.1116/6.0000993","mag":"3191349600"},"language":"en","primary_location":{"id":"doi:10.1116/6.0000993","doi":"https://doi.org/10.1116/6.0000993","is_oa":false,"landing_page_url":"https://doi.org/10.1116/6.0000993","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science &amp; Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027794909","display_name":"Sudharshanaraj Thiruppathiraj","orcid":"https://orcid.org/0000-0002-0289-8841","observed_orcids":["https://orcid.org/0000-0002-0289-8841"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Sudharshanaraj Thiruppathiraj","raw_affiliation_strings":["Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin 1 , Austin, Texas 78712","2Memory Technology Innovation Team, Samsung Electronics, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-0289-8841","affiliations":[{"raw_affiliation_string":"Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin 1 , Austin, Texas 78712","institution_ids":["https://openalex.org/I86519309"]},{"raw_affiliation_string":"2Memory Technology Innovation Team, Samsung Electronics, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Seung-Min Ryu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Seung-Min Ryu","raw_affiliation_strings":["Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin 1 , Austin, Texas 78712","Memory Technology Innovation Team, Samsung Electronics 2 , 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin 1 , Austin, Texas 78712","institution_ids":["https://openalex.org/I86519309"]},{"raw_affiliation_string":"Memory Technology Innovation Team, Samsung Electronics 2 , 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087109039","display_name":"Jiho Uh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Jiho Uh","raw_affiliation_strings":["Memory Technology Innovation Team, Samsung Electronics 2 , 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea","1Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, Texas 78712"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Memory Technology Innovation Team, Samsung Electronics 2 , 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"raw_affiliation_string":"1Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin, Austin, Texas 78712","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5053259854","display_name":"Laxminarayan L. Raja","orcid":"https://orcid.org/0000-0002-5963-7183","observed_orcids":["https://orcid.org/0000-0002-5963-7183"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]},{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["KR","US"],"is_corresponding":false,"raw_author_name":"Laxminarayan L. Raja","raw_affiliation_strings":["Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin 1 , Austin, Texas 78712","2Memory Technology Innovation Team, Samsung Electronics, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-5963-7183","affiliations":[{"raw_affiliation_string":"Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin 1 , Austin, Texas 78712","institution_ids":["https://openalex.org/I86519309"]},{"raw_affiliation_string":"2Memory Technology Innovation Team, Samsung Electronics, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.6267,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.55537826,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"39","issue":"5","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11012","display_name":"Gas Dynamics and Kinetic Theory","score":0.7056000232696533,"subfield":{"id":"https://openalex.org/subfields/2604","display_name":"Applied Mathematics"},"field":{"id":"https://openalex.org/fields/26","display_name":"Mathematics"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11012","display_name":"Gas Dynamics and Kinetic Theory","score":0.7056000232696533,"subfield":{"id":"https://openalex.org/subfields/2604","display_name":"Applied Mathematics"},"field":{"id":"https://openalex.org/fields/26","display_name":"Mathematics"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.21119999885559082,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.03370000049471855,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.9580000042915344},{"id":"https://openalex.org/keywords/gas-dynamic-phenomena","display_name":"gas-dynamic phenomena","score":0.6629999876022339},{"id":"https://openalex.org/keywords/direct-simulation-monte-carlo","display_name":"direct simulation Monte Carlo","score":0.8840000033378601},{"id":"https://openalex.org/keywords/low-pressure-gas-flow","display_name":"low-pressure gas flow","score":0.6570000052452087},{"id":"https://openalex.org/keywords/precursor-transport","display_name":"precursor transport","score":0.625},{"id":"https://openalex.org/keywords/wafer-to-wafer-uniformity","display_name":"wafer-to-wafer uniformity","score":0.8450000286102295},{"id":"https://openalex.org/keywords/hexachlorodisilane","display_name":"hexachlorodisilane","score":0.8550000190734863},{"id":"https://openalex.org/keywords/n2","display_name":"N2","score":0.44200000166893005},{"id":"https://openalex.org/keywords/flow-efficiency","display_name":"flow efficiency","score":0.7480000257492065},{"id":"https://openalex.org/keywords/chamber-pressure-effects","display_name":"chamber pressure effects","score":0.5809999704360962},{"id":"https://openalex.org/keywords/microelectronics-manufacturing","display_name":"microelectronics manufacturing","score":0.5630000233650208}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5730627775192261},{"id":"https://openalex.org/C121838276","wikidata":"https://www.wikidata.org/wiki/Q898463","display_name":"Knudsen number","level":2,"score":0.5693473815917969},{"id":"https://openalex.org/C56200935","wikidata":"https://www.wikidata.org/wiki/Q250840","display_name":"Nozzle","level":2,"score":0.5570089221000671},{"id":"https://openalex.org/C164916747","wikidata":"https://www.wikidata.org/wiki/Q4382753","display_name":"Direct simulation Monte Carlo","level":4,"score":0.467443585395813},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.43117761611938477},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.4301576316356659},{"id":"https://openalex.org/C116915560","wikidata":"https://www.wikidata.org/wiki/Q83504","display_name":"Nuclear engineering","level":1,"score":0.4250602424144745},{"id":"https://openalex.org/C19499675","wikidata":"https://www.wikidata.org/wiki/Q232207","display_name":"Monte Carlo method","level":2,"score":0.3585037291049957},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.330543577671051},{"id":"https://openalex.org/C21880701","wikidata":"https://www.wikidata.org/wiki/Q2144042","display_name":"Process engineering","level":1,"score":0.3251011073589325},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.2879842519760132},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2754996418952942},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.23582586646080017},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1726611852645874},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16239076852798462},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C122592724","wikidata":"https://www.wikidata.org/wiki/Q3855635","display_name":"Dynamic Monte Carlo method","level":3,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/6.0000993","doi":"https://doi.org/10.1116/6.0000993","is_oa":false,"landing_page_url":"https://doi.org/10.1116/6.0000993","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science &amp; Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W44635738","https://openalex.org/W70668290","https://openalex.org/W1127764592","https://openalex.org/W1855270923","https://openalex.org/W2008957255","https://openalex.org/W2009243642","https://openalex.org/W2013778882","https://openalex.org/W2023603575","https://openalex.org/W2067186721","https://openalex.org/W2068287047","https://openalex.org/W2080159084","https://openalex.org/W2087781684","https://openalex.org/W2090180764","https://openalex.org/W2092757808","https://openalex.org/W2093760190","https://openalex.org/W2145578865","https://openalex.org/W2149069724","https://openalex.org/W2158932701","https://openalex.org/W2331598051","https://openalex.org/W2563810937","https://openalex.org/W2587454830","https://openalex.org/W2759604599","https://openalex.org/W2772211699","https://openalex.org/W2898360593","https://openalex.org/W2924393512","https://openalex.org/W2945439698","https://openalex.org/W2976672754","https://openalex.org/W3046944378","https://openalex.org/W3151622402","https://openalex.org/W4239845550"],"related_works":["https://openalex.org/W3200494764","https://openalex.org/W290912894","https://openalex.org/W7219649674","https://openalex.org/W7163174638","https://openalex.org/W7115717484","https://openalex.org/W4391072165","https://openalex.org/W2788810015","https://openalex.org/W2052397532","https://openalex.org/W1127764592","https://openalex.org/W2945439698"],"abstract_inverted_index":{"Atomic":[0],"layer":[1],"deposition":[2,30,111],"(ALD)":[3],"using":[4],"multiwafer":[5,105,251],"batch":[6,106],"reactors":[7],"has":[8],"now":[9],"emerged":[10],"as":[11,121,218],"the":[12,39,51,57,77,84,110,128,148,153,156,160,167,173,184,191,196,204,210,223,226,233,249,276],"manufacturing":[13],"process":[14,25,64,122],"of":[15,27,53,76,89,112,137,155,190,228,275],"choice":[16],"for":[17,97,109,188,212,242],"modern":[18],"microelectronics":[19],"at":[20],"a":[21,70,133,213,243],"massive":[22],"scale.":[23],"Stringent":[24],"requirements":[26],"thin":[28,47,114],"film":[29,41,48],"uniformity":[31],"within":[32,240],"wafer":[33,45,163,234,245],"(WiW)":[34],"and":[35,50,63,118,132,170,194,200,246,260,269],"wafer\u2013wafer":[36],"(WTW)":[37],"in":[38,56,127,183,219],"batch,":[40],"conformity":[42],"along":[43],"submicrometer":[44],"features,":[46],"quality,":[49],"utilization":[52],"expensive":[54],"precursors":[55],"reactor":[58,61,79,107,135,176,192,264],"dictate":[59],"ALD":[60,100],"design":[62],"parameter":[65],"optimization.":[66],"This":[67],"paper":[68],"discusses":[69],"particle-based":[71],"direct-simulation":[72],"Monte":[73],"Carlo":[74],"(DSMC)":[75],"full":[78],"scale":[80],"simulation":[81],"that":[82,255],"overcomes":[83],"low":[85],"Knudsen":[86,205],"number":[87,206,215],"limitation":[88],"typical":[90],"continuum":[91],"computational":[92],"fluid":[93],"dynamics":[94],"approaches":[95,207],"used":[96,108],"modeling":[98],"low-pressure":[99],"reactors.":[101],"A":[102,263],"representative":[103],"industrial":[104],"Si-based":[113],"films":[115],"with":[116,125,152],"N2":[117],"Si2Cl6":[119],"(hexachlorodisilane)":[120],"feed":[123,164,197],"gases":[124],"pressures":[126],"range":[129],"43\u2013130":[130],"Pa":[131],"uniform":[134],"temperature":[136],"600":[138],"\u00b0C":[139],"is":[140,236,267],"simulated.":[141],"The":[142,175],"model":[143],"provides":[144],"detailed":[145],"insights":[146],"into":[147,166],"flow":[149,186,265],"physics":[150],"associated":[151],"transport":[154],"precursor":[157,229],"species":[158,230],"from":[159],"inlets,":[161],"through":[162,172],"nozzles,":[165],"interwafer":[168,201],"regions,":[169],"finally":[171],"outlet.":[174],"operating":[177],"conditions":[178],"are":[179],"shown":[180],"to":[181,238,271],"be":[182,239,272],"slip/transitional":[185],"regime":[187],"much":[189],"volume":[193],"especially":[195],"gas":[198],"nozzle":[199],"regions":[202],"(where":[203],"\u223c0.2),":[208],"justifying":[209],"need":[211],"high-Knudsen":[214],"DSMC":[216],"approach":[217],"this":[220],"work.":[221],"For":[222],"simulated":[224],"conditions,":[225],"nonuniformity":[227],"immediately":[231],"above":[232],"surface":[235],"predicted":[237],"<1%":[241],"given":[244],"<2%":[247],"across":[248],"entire":[250],"stack.":[252],"Results":[253],"indicate":[254],"higher":[256],"pressure":[257],"degrades":[258],"WiW":[259],"WTW":[261],"uniformity.":[262],"efficiency":[266],"defined":[268],"found":[270],"\u223c99%,":[273],"irrespective":[274],"chamber":[277],"pressure.":[278]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2021-08-16T00:00:00"}