{"id":"https://openalex.org/W3191103672","doi":"https://doi.org/10.1149/2162-8777/ac1479","title":"Lifting the Optical and Thermoelectric Properties of Mg 2 Si as a Function of Sn Incorporation\u2014Potential Thermoelectric Materials","display_name":"Lifting the Optical and Thermoelectric Properties of Mg 2 Si as a Function of Sn Incorporation\u2014Potential Thermoelectric Materials","publication_year":2021,"publication_date":"2021-07-01","ids":{"openalex":"https://openalex.org/W3191103672","doi":"https://doi.org/10.1149/2162-8777/ac1479","mag":"3191103672"},"language":"en","primary_location":{"id":"doi:10.1149/2162-8777/ac1479","doi":"https://doi.org/10.1149/2162-8777/ac1479","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac1479","pdf_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac1479/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac1479/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006069395","display_name":"M. V. Manjula","orcid":"https://orcid.org/0000-0001-8894-6527","observed_orcids":["https://orcid.org/0000-0001-8894-6527"]},"institutions":[{"id":"https://openalex.org/I39244652","display_name":"Indian Institute of Information Technology, Design and Manufacturing, Kancheepuram","ror":"https://ror.org/023c9pb11","country_code":"IN","type":"education","lineage":["https://openalex.org/I39244652"]},{"id":"https://openalex.org/I43814544","display_name":"Sathyabama Institute of Science and Technology","ror":"https://ror.org/01defpn95","country_code":"IN","type":"education","lineage":["https://openalex.org/I43814544"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"M. Manjula","raw_affiliation_strings":["SMart and Innovative Laboratory for Energy Devices (SMILE), Indian Institute of Information Technology Design and Manufacturing (IIITDM), Kancheepuram, Chennai 600127, India","Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India"],"raw_orcid":"https://orcid.org/0000-0001-8894-6527","affiliations":[{"raw_affiliation_string":"SMart and Innovative Laboratory for Energy Devices (SMILE), Indian Institute of Information Technology Design and Manufacturing (IIITDM), Kancheepuram, Chennai 600127, India","institution_ids":["https://openalex.org/I39244652"]},{"raw_affiliation_string":"Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India","institution_ids":["https://openalex.org/I43814544"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045700618","display_name":"E. Viswanathan","orcid":"https://orcid.org/0000-0002-0124-4512","observed_orcids":["https://orcid.org/0000-0002-0124-4512"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"E. Viswanathan","raw_affiliation_strings":["Sri Sairam Institute of Technology, Chennai \u2212600044, Tamilnadu, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sri Sairam Institute of Technology, Chennai \u2212600044, Tamilnadu, India","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039503749","display_name":"M. Muthumari","orcid":"https://orcid.org/0000-0003-2103-531X","observed_orcids":["https://orcid.org/0000-0003-2103-531X"]},"institutions":[{"id":"https://openalex.org/I43814544","display_name":"Sathyabama Institute of Science and Technology","ror":"https://ror.org/01defpn95","country_code":"IN","type":"education","lineage":["https://openalex.org/I43814544"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"M. Muthumari","raw_affiliation_strings":["Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India","institution_ids":["https://openalex.org/I43814544"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022414501","display_name":"K. Pradheepa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I43814544","display_name":"Sathyabama Institute of Science and Technology","ror":"https://ror.org/01defpn95","country_code":"IN","type":"education","lineage":["https://openalex.org/I43814544"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"K. Pradheepa","raw_affiliation_strings":["Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India","institution_ids":["https://openalex.org/I43814544"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052649286","display_name":"R. Dhivyabharathi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I43814544","display_name":"Sathyabama Institute of Science and Technology","ror":"https://ror.org/01defpn95","country_code":"IN","type":"education","lineage":["https://openalex.org/I43814544"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"R. Dhivyabharathi","raw_affiliation_strings":["Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India","institution_ids":["https://openalex.org/I43814544"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039904473","display_name":"L. Shalini","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I43814544","display_name":"Sathyabama Institute of Science and Technology","ror":"https://ror.org/01defpn95","country_code":"IN","type":"education","lineage":["https://openalex.org/I43814544"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"L. Shalini","raw_affiliation_strings":["Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sathyabama Institute of Science and Technology, Chennai-600119, Tamilnadu, India","institution_ids":["https://openalex.org/I43814544"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059318048","display_name":"\u0414\u0435\u043d\u0438\u0441 \u041a\u0443\u0437\u043d\u0435\u0446\u043e\u0432","orcid":"https://orcid.org/0000-0003-1021-8217","observed_orcids":["https://orcid.org/0000-0003-1021-8217"]},"institutions":[{"id":"https://openalex.org/I12003341","display_name":"National University of Science and Technology","ror":"https://ror.org/019vsm959","country_code":"RU","type":"education","lineage":["https://openalex.org/I12003341"]}],"countries":["RU"],"is_corresponding":false,"raw_author_name":"Denis Kuznetsov","raw_affiliation_strings":["Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology \u201cMISiS\u201d, Moscow 119049, Russia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology \u201cMISiS\u201d, Moscow 119049, Russia","institution_ids":["https://openalex.org/I12003341"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5039526803","display_name":"Pandiyarasan Veluswamy","orcid":"https://orcid.org/0000-0002-1266-9137","observed_orcids":["https://orcid.org/0000-0002-1266-9137","https://orcid.org/0000-0002-2200-3929"]},"institutions":[{"id":"https://openalex.org/I12003341","display_name":"National University of Science and Technology","ror":"https://ror.org/019vsm959","country_code":"RU","type":"education","lineage":["https://openalex.org/I12003341"]},{"id":"https://openalex.org/I39244652","display_name":"Indian Institute of Information Technology, Design and Manufacturing, Kancheepuram","ror":"https://ror.org/023c9pb11","country_code":"IN","type":"education","lineage":["https://openalex.org/I39244652"]}],"countries":["IN","RU"],"is_corresponding":true,"raw_author_name":"Pandiyarasan Veluswamy","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Indian Institute of Information Technology Design and Manufacturing (IIITDM) Kancheepuram, Chennai 60012, India","Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology \u201cMISiS\u201d, Moscow 119049, Russia","SMart and Innovative Laboratory for Energy Devices (SMILE), Indian Institute of Information Technology Design and Manufacturing (IIITDM), Kancheepuram, Chennai 600127, India"],"raw_orcid":"https://orcid.org/0000-0002-1266-9137","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Indian Institute of Information Technology Design and Manufacturing (IIITDM) Kancheepuram, Chennai 60012, India","institution_ids":["https://openalex.org/I39244652"]},{"raw_affiliation_string":"Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology \u201cMISiS\u201d, Moscow 119049, Russia","institution_ids":["https://openalex.org/I12003341"]},{"raw_affiliation_string":"SMart and Innovative Laboratory for Energy Devices (SMILE), Indian Institute of Information Technology Design and Manufacturing (IIITDM), Kancheepuram, Chennai 600127, India","institution_ids":["https://openalex.org/I39244652"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5006069395","https://openalex.org/A5039526803"],"corresponding_institution_ids":["https://openalex.org/I12003341","https://openalex.org/I39244652","https://openalex.org/I43814544"],"apc_list":{"value":1025,"currency":"USD","value_usd":1025},"apc_paid":null,"fwci":0.2136,"has_fulltext":true,"cited_by_count":5,"citation_normalized_percentile":{"value":0.34877066,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"10","issue":"7","first_page":"071023","last_page":"071023"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10440","display_name":"Advanced Thermoelectric Materials and Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11948","display_name":"Machine Learning in Materials Science","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11277","display_name":"Thermal properties of materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mg2si","display_name":"Mg2Si","score":0.9369999766349792},{"id":"https://openalex.org/keywords/sn-doping","display_name":"tin doping","score":0.8790000081062317},{"id":"https://openalex.org/keywords/thermoelectric-materials","display_name":"thermoelectric materials","score":0.8920000195503235},{"id":"https://openalex.org/keywords/optical-properties","display_name":"optical properties","score":0.7089999914169312},{"id":"https://openalex.org/keywords/band-structure","display_name":"electronic band structure","score":0.8889999985694885},{"id":"https://openalex.org/keywords/band-gap","display_name":"band gap","score":0.6949999928474426},{"id":"https://openalex.org/keywords/seebeck-coefficient","display_name":"Seebeck coefficient","score":0.652999997138977},{"id":"https://openalex.org/keywords/power-factor","display_name":"power factor","score":0.9879999756813049},{"id":"https://openalex.org/keywords/electrical-conductivity","display_name":"electrical conductivity","score":0.8600000143051147},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":0.9909999966621399},{"id":"https://openalex.org/keywords/boltzmann-transport-theory","display_name":"Boltzmann transport theory","score":0.8420000076293945},{"id":"https://openalex.org/keywords/ternary-alloys","display_name":"ternary alloys","score":0.527999997138977}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8561162948608398},{"id":"https://openalex.org/C112625512","wikidata":"https://www.wikidata.org/wiki/Q1091448","display_name":"Seebeck coefficient","level":3,"score":0.8166074156761169},{"id":"https://openalex.org/C63024428","wikidata":"https://www.wikidata.org/wiki/Q552456","display_name":"Thermoelectric effect","level":2,"score":0.8056616187095642},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.6535263061523438},{"id":"https://openalex.org/C152365726","wikidata":"https://www.wikidata.org/wiki/Q1048589","display_name":"Density functional theory","level":2,"score":0.6107949614524841},{"id":"https://openalex.org/C64452783","wikidata":"https://www.wikidata.org/wiki/Q1524945","display_name":"Ternary operation","level":2,"score":0.5367215275764465},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5302808880805969},{"id":"https://openalex.org/C207365445","wikidata":"https://www.wikidata.org/wiki/Q15020929","display_name":"Thermoelectric materials","level":3,"score":0.5253835916519165},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4961749017238617},{"id":"https://openalex.org/C53964469","wikidata":"https://www.wikidata.org/wiki/Q230895","display_name":"Density of states","level":2,"score":0.4909248650074005},{"id":"https://openalex.org/C2182769","wikidata":"https://www.wikidata.org/wiki/Q62500","display_name":"Ionic bonding","level":3,"score":0.4832766354084015},{"id":"https://openalex.org/C125469278","wikidata":"https://www.wikidata.org/wiki/Q806380","display_name":"Electronic band structure","level":2,"score":0.4502444267272949},{"id":"https://openalex.org/C97346530","wikidata":"https://www.wikidata.org/wiki/Q487005","display_name":"Thermal conductivity","level":2,"score":0.45018211007118225},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.4210437834262848},{"id":"https://openalex.org/C193154288","wikidata":"https://www.wikidata.org/wiki/Q959336","display_name":"Direct and indirect band gaps","level":3,"score":0.42060935497283936},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.26652783155441284},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.16208237409591675},{"id":"https://openalex.org/C147597530","wikidata":"https://www.wikidata.org/wiki/Q369472","display_name":"Computational chemistry","level":1,"score":0.11562687158584595},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.07008346915245056},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.06391513347625732},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.058779776096343994},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/2162-8777/ac1479","doi":"https://doi.org/10.1149/2162-8777/ac1479","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac1479","pdf_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac1479/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1149/2162-8777/ac1479","doi":"https://doi.org/10.1149/2162-8777/ac1479","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2162-8777/ac1479","pdf_url":"https://iopscience.iop.org/article/10.1149/2162-8777/ac1479/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2952307179","display_name":null,"funder_award_id":"INSA/SAP/VSP-09/2020-21/02","funder_id":"https://openalex.org/F4320310654","funder_display_name":"Indian National Science Academy"},{"id":"https://openalex.org/G7061215204","display_name":null,"funder_award_id":"002629","funder_id":"https://openalex.org/F4320320719","funder_display_name":"Department of Science and Technology, Ministry of Science and Technology, India"}],"funders":[{"id":"https://openalex.org/F4320310654","display_name":"Indian National Science Academy","ror":"https://ror.org/051475v86"},{"id":"https://openalex.org/F4320320719","display_name":"Department of Science and Technology, Ministry of Science and Technology, India","ror":"https://ror.org/0101xrq71"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3191103672.pdf","grobid_xml":"https://content.openalex.org/works/W3191103672.grobid-xml"},"referenced_works_count":48,"referenced_works":["https://openalex.org/W285749399","https://openalex.org/W984497882","https://openalex.org/W1655859996","https://openalex.org/W1664977454","https://openalex.org/W1668077258","https://openalex.org/W1964418024","https://openalex.org/W1968175862","https://openalex.org/W1970701953","https://openalex.org/W1975968611","https://openalex.org/W1981368803","https://openalex.org/W1994715177","https://openalex.org/W2004475367","https://openalex.org/W2007578111","https://openalex.org/W2011683014","https://openalex.org/W2015762944","https://openalex.org/W2027825030","https://openalex.org/W2039634092","https://openalex.org/W2056142316","https://openalex.org/W2061345386","https://openalex.org/W2061469359","https://openalex.org/W2066517405","https://openalex.org/W2068972463","https://openalex.org/W2081870935","https://openalex.org/W2083826154","https://openalex.org/W2089683283","https://openalex.org/W2096636716","https://openalex.org/W2218964474","https://openalex.org/W2230728100","https://openalex.org/W2257450266","https://openalex.org/W2314924116","https://openalex.org/W2315113036","https://openalex.org/W2315344226","https://openalex.org/W2317948384","https://openalex.org/W2319344044","https://openalex.org/W2328234289","https://openalex.org/W2567427138","https://openalex.org/W2767361597","https://openalex.org/W2789311066","https://openalex.org/W2790960310","https://openalex.org/W2800678925","https://openalex.org/W2920737947","https://openalex.org/W2950873748","https://openalex.org/W2971328245","https://openalex.org/W3011694378","https://openalex.org/W3016129304","https://openalex.org/W3040669901","https://openalex.org/W3102444728","https://openalex.org/W3107982167"],"related_works":["https://openalex.org/W2617023232","https://openalex.org/W2988691200","https://openalex.org/W2464193217","https://openalex.org/W4411864583","https://openalex.org/W3031010056","https://openalex.org/W2326513888","https://openalex.org/W4212983679","https://openalex.org/W4306319062","https://openalex.org/W2315344226","https://openalex.org/W1975879562"],"abstract_inverted_index":{"By":[0],"means":[1],"of":[2,19,61,79,101,158,203],"Density":[3],"Functional":[4],"Theory":[5],"(DFT)":[6],"study,":[7],"we":[8],"have":[9,177,190],"performed":[10,179],"the":[11,76,96,106,156,181,194,204],"structural,":[12],"electronic,":[13],"optical":[14,174],"and":[15,58,83,103,147,229],"thermoelectric":[16,59,188,219],"properties":[17,60,78,175,189],"calculations":[18,176],"tin":[20],"doped":[21,63,85,121],"Mg":[22,64,80,86,108,124,166,208],"2":[23,26,65,81,87,109,125,167,209],"Si":[24,27,66,82,88,126,168,210],"(Mg":[25],"1\u2212x":[28,127],"Sn":[29,62,84,120,128,170,212],"x":[30,32,129,131],",":[31,130],"=":[33,132],"0,":[34],"0.125,":[35,133],"0.25,":[36,134],"0.5,":[37,135],"0.75,":[38,136],"0.875,":[39],"1)":[40],"using":[41],"Full":[42],"Potential":[43],"Linearized":[44],"Augmented":[45],"Plane":[46],"Wave":[47],"(FP-LAPW)":[48],"Method.":[49],"The":[50,173,187],"DFT":[51],"study":[52],"yields":[53],"satisfactory":[54],"results":[55],"for":[56,165,180,193],"electronic":[57],"compared":[67],"with":[68,117,143,155,221],"experimental":[69],"values.":[70],"With":[71],"semiclassical":[72],"Boltzmann":[73],"transport":[74,77],"theory,":[75],"alloys":[89],"has":[90],"been":[91,178,191],"investigated":[92],"systematically.":[93],"According":[94],"to":[95,199,215],"calculated":[97,192],"band":[98,140],"structure,":[99],"density":[100],"states":[102],"electron":[104],"density,":[105],"parent":[107],"Si/Sn":[110],"materials":[111],"having":[112,138],"indirect":[113],"energy":[114,182],"gap":[115,141,152],"(\u0393\u2212x)":[116],"ionic":[118,148],"bonding;":[119],"ternary":[122],"combinations":[123],"0.875":[137],"direct":[139],"(\u0393\u2212\u0393)":[142],"a":[144,217],"mixed":[145],"covalent":[146],"bonding":[149],"nature.":[150],"Band":[151],"decreases":[153],"linearly":[154],"increase":[157],"Sn-concentration":[159],"in":[160],"each":[161],"alloy":[162],"system":[163],"except":[164],"0.75":[169,211],"0.25":[171,213],"combination.":[172],"range":[183,196],"between":[184],"0\u201313.5":[185],"eV.":[186],"temperature":[195,235],"100":[197],"K":[198],"800":[200],"K.":[201],"Out":[202],"five":[205],"studied":[206],"materials,":[207],"found":[214],"be":[216],"better":[218],"material":[220],"increased":[222],"Power":[223],"factor,":[224],"Seebeck":[225],"coefficient,":[226],"electrical":[227],"conductivity":[228,232],"corresponding":[230],"thermal":[231],"at":[233],"high":[234],"range.":[236]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2021-08-16T00:00:00"}