{"id":"https://openalex.org/W3096597366","doi":"https://doi.org/10.1166/jno.2020.2818","title":"Al Implantation and Post Annealing Effects in n-Type 4H-SiC","display_name":"Al Implantation and Post Annealing Effects in n-Type 4H-SiC","publication_year":2020,"publication_date":"2020-07-01","ids":{"openalex":"https://openalex.org/W3096597366","doi":"https://doi.org/10.1166/jno.2020.2818","mag":"3096597366"},"language":"en","primary_location":{"id":"doi:10.1166/jno.2020.2818","doi":"https://doi.org/10.1166/jno.2020.2818","is_oa":false,"landing_page_url":"https://doi.org/10.1166/jno.2020.2818","pdf_url":null,"source":{"id":"https://openalex.org/S87397198","display_name":"Journal of Nanoelectronics and Optoelectronics","issn_l":"1555-130X","issn":["1555-130X","1555-1318"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","poland-40"],"host_organization":"https://openalex.org/P4310321646","host_organization_name":"American Scientific Publishers","host_organization_lineage":["https://openalex.org/P4310321646"],"host_organization_lineage_names":["American Scientific Publishers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Nanoelectronics and Optoelectronics","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W3096597366"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008084328","display_name":"Woo-Young Son","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Woo-Young Son","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038305700","display_name":"Myeong-Cheol Shin","orcid":"https://orcid.org/0000-0002-1265-9983","observed_orcids":["https://orcid.org/0000-0002-1265-9983"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Myeong-Cheol Shin","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069949103","display_name":"Michael A. Schweitz","orcid":"https://orcid.org/0000-0001-8273-8225","observed_orcids":["https://orcid.org/0000-0001-8273-8225"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Michael Schweitz","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100634548","display_name":"Sang\u2010Kwon Lee","orcid":"https://orcid.org/0000-0001-6526-5200","observed_orcids":["https://orcid.org/0000-0001-6526-5200"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sang-Kwon Lee","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5034148512","display_name":"Sang\u2010Mo Koo","orcid":"https://orcid.org/0000-0002-9827-9219","observed_orcids":["https://orcid.org/0000-0002-9827-9219"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sang-Mo Koo","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0861,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.36340878,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":93},"biblio":{"volume":"15","issue":"7","first_page":"777","last_page":"782"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9824000000953674,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.017000000923871994,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/aluminum-ion-implantation","display_name":"aluminum ion implantation","score":0.871999979019165},{"id":"https://openalex.org/keywords/post-implantation-annealing","display_name":"post-implantation annealing","score":0.9350000023841858},{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.9670000076293945},{"id":"https://openalex.org/keywords/n-type-silicon-carbide","display_name":"n-type silicon carbide","score":0.9380000233650208},{"id":"https://openalex.org/keywords/deep-level-transient-spectroscopy","display_name":"deep level transient spectroscopy","score":0.7910000085830688},{"id":"https://openalex.org/keywords/electrical-defects","display_name":"electrical defects","score":0.6909999847412109},{"id":"https://openalex.org/keywords/schottky-contacts","display_name":"Schottky contacts","score":0.7680000066757202},{"id":"https://openalex.org/keywords/shallow-defects","display_name":"shallow defects","score":0.40400001406669617},{"id":"https://openalex.org/keywords/trap-concentration","display_name":"trap concentration","score":0.5049999952316284},{"id":"https://openalex.org/keywords/capture-cross-section","display_name":"capture cross section","score":0.8109999895095825}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.8364084959030151},{"id":"https://openalex.org/C2780080961","wikidata":"https://www.wikidata.org/wiki/Q176282","display_name":"Deep-level transient spectroscopy","level":3,"score":0.766272783279419},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.737429141998291},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.674245297908783},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.595758318901062},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5431434512138367},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.5094349980354309},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.49774888157844543},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.4557587206363678},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4008089303970337},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2491859793663025},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.238030344247818},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.16717100143432617},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1297895312309265},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1148253083229065},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1166/jno.2020.2818","doi":"https://doi.org/10.1166/jno.2020.2818","is_oa":false,"landing_page_url":"https://doi.org/10.1166/jno.2020.2818","pdf_url":null,"source":{"id":"https://openalex.org/S87397198","display_name":"Journal of Nanoelectronics and Optoelectronics","issn_l":"1555-130X","issn":["1555-130X","1555-1318"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","poland-40"],"host_organization":"https://openalex.org/P4310321646","host_organization_name":"American Scientific Publishers","host_organization_lineage":["https://openalex.org/P4310321646"],"host_organization_lineage_names":["American Scientific Publishers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Nanoelectronics and Optoelectronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2316770947","https://openalex.org/W4391868119","https://openalex.org/W1979662999","https://openalex.org/W2005249801","https://openalex.org/W1994223615","https://openalex.org/W2071623513","https://openalex.org/W2969686689","https://openalex.org/W2523303981","https://openalex.org/W4398193111","https://openalex.org/W2519677491"],"abstract_inverted_index":{"We":[0],"investigated":[1],"the":[2,32,37,81,102,107,113,131,150,153,163,175,180,184,189],"post":[3],"annealing":[4,75,80],"effect":[5,33,73],"of":[6,34,61,67,74,106,120,130,138,170,183,210,220],"Al":[7],"implantation":[8,151,177],"in":[9,98,124],"n-type":[10,25,47],"4H-SiC":[11,29,52],"by":[12,79,167],"using":[13],"deep":[14],"level":[15,137,143],"transient":[16],"spectroscopy":[17],"(DLTS).":[18],"The":[19,72,141],"Schottky":[20],"contacts":[21],"were":[22,91],"deposited":[23],"on":[24,28,36,50,112],"epitaxial":[26,48],"layer":[27,49],"substrates":[30],"and":[31,43,64,94,104,162,186,216],"Al-implantation":[35],"structures":[38,82],"has":[39,76],"been":[40,77],"examined":[41],"with":[42,56,205],"without":[44,127],"post-annealing":[45],"process.":[46],"a":[51,65,168,196,206,217],"substrate":[53],"was":[54,144,201],"implanted":[55],"Al-ion":[57,176],"at":[58,83],"an":[59,135],"energy":[60,136,142],"300":[62],"keV":[63],"dose":[66],"1.0":[68],"\u00d7":[69,212,222],"1015":[70,223],"cm\u20132.":[71],"studied":[78],"1700":[84],"C":[85],"after":[86,95,149],"ion":[87,96],"implantation.":[88,128],"DLTS":[89,114,190],"measurements":[90],"performed":[92],"before":[93],"implantation,":[97],"order":[99],"to":[100,146],"determine":[101],"characteristics":[103,182],"magnitudes":[105],"resulting":[108],"electrical":[109,181],"defects.":[110],"Based":[111],"measurement":[115,191],"results,":[116],"typical":[117],"Z1/2":[118,129],"peak":[119],"SiC":[121],"is":[122,157],"obtained":[123],"reference":[125],"samples":[126,133],"non-annealed":[132],"had":[134],"0.831":[139],"eV.":[140],"found":[145],"be":[147],"deeper":[148],"whereas":[152],"capture":[154,207],"cross":[155,208],"section":[156,209],"about":[158],"60":[159],"times":[160],"smaller":[161],"trap":[164,218],"concentration":[165,219],"increases":[166],"factor":[169],"10.":[171],"In":[172],"other":[173],"words,":[174],"clearly":[178],"influenced":[179],"sample":[185],"consequently":[187],"also":[188],"results.":[192],"After":[193],"post-implantation":[194],"annealing,":[195],"new":[197],"shallow":[198],"defect":[199],"(I2Al-A)":[200],"identified":[202],"(\u223c0.028":[203],"eV)":[204],"1.9":[211],"10\u201321":[213],"cm":[214],"\u20132":[215],"4.8":[221],"cm\u20133.":[224]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2020-11-09T00:00:00"}