{"id":"https://openalex.org/W3093392007","doi":"https://doi.org/10.1186/s11671-020-03429-3","title":"A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance","display_name":"A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance","publication_year":2020,"publication_date":"2020-10-17","ids":{"openalex":"https://openalex.org/W3093392007","doi":"https://doi.org/10.1186/s11671-020-03429-3","mag":"3093392007","pmid":"https://pubmed.ncbi.nlm.nih.gov/33068207","pmcid":"https://www.ncbi.nlm.nih.gov/pmc/articles/7568735"},"language":"en","primary_location":{"id":"doi:10.1186/s11671-020-03429-3","doi":"https://doi.org/10.1186/s11671-020-03429-3","is_oa":true,"landing_page_url":"https://doi.org/10.1186/s11671-020-03429-3","pdf_url":"https://link.springer.com/content/pdf/10.1186/s11671-020-03429-3.pdf","source":{"id":"https://openalex.org/S55093224","display_name":"Nanoscale Research Letters","issn_l":"1556-276X","issn":["1556-276X","1931-7573"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-scientific","cwts-core","doaj","ki-jl-1","poland-20"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale Research Letters","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W3093392007"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj","pubmed"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://link.springer.com/content/pdf/10.1186/s11671-020-03429-3.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5014548288","display_name":"Shupeng Chen","orcid":"https://orcid.org/0000-0002-2897-7089","observed_orcids":["https://orcid.org/0000-0002-2897-7089","https://orcid.org/0000-0002-6220-7061"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shupeng Chen","raw_affiliation_strings":["School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China"],"raw_orcid":"https://orcid.org/0000-0002-2897-7089","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052931863","display_name":"Shulong Wang","orcid":"https://orcid.org/0000-0002-8560-2478","observed_orcids":["https://orcid.org/0000-0002-8560-2478"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Shulong Wang","raw_affiliation_strings":["School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China. slwang@xidian.edu.cn","School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China. slwang@xidian.edu.cn","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100434461","display_name":"Hongxia Liu","orcid":"https://orcid.org/0000-0003-4547-0666","observed_orcids":["https://orcid.org/0000-0003-4547-0666","https://orcid.org/0000-0003-1698-0720"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Hongxia Liu","raw_affiliation_strings":["School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China. hxliu@mail.xidian.edu.cn","School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China. hxliu@mail.xidian.edu.cn","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011299124","display_name":"Tao Han","orcid":"https://orcid.org/0000-0002-6576-5093","observed_orcids":["https://orcid.org/0000-0002-6576-5093"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tao Han","raw_affiliation_strings":["School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071150147","display_name":"Haiwu Xie","orcid":"https://orcid.org/0000-0002-6465-9600","observed_orcids":["https://orcid.org/0000-0002-6465-9600"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Haiwu Xie","raw_affiliation_strings":["School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":null,"display_name":"Chen Chong","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chen Chong","raw_affiliation_strings":["School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Education, Xidian University, Xi'an, 710071, China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5052931863","https://openalex.org/A5100434461"],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":{"value":2170,"currency":"USD","value_usd":2170},"apc_paid":{"value":2170,"currency":"USD","value_usd":2170},"fwci":2.0632,"has_fulltext":true,"cited_by_count":57,"citation_normalized_percentile":{"value":0.87102678,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"15","issue":"1","first_page":"202","last_page":"202"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"tunnel field-effect transistor","score":0.8980000019073486},{"id":"https://openalex.org/keywords/high-k-gate-dielectrics","display_name":"high-k gate dielectrics","score":0.828000009059906},{"id":"https://openalex.org/keywords/off-state-leakage","display_name":"off-state leakage","score":0.8190000057220459},{"id":"https://openalex.org/keywords/subthreshold-swing","display_name":"subthreshold swing","score":0.9049999713897705},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.8169999718666077},{"id":"https://openalex.org/keywords/gain-bandwidth-product","display_name":"gain-bandwidth product","score":0.953000009059906},{"id":"https://openalex.org/keywords/ultra-low-power-electronics","display_name":"ultra-low power electronics","score":0.7160000205039978},{"id":"https://openalex.org/keywords/device-footprint-reduction","display_name":"device footprint reduction","score":0.4259999990463257}],"concepts":[{"id":"https://openalex.org/C25621703","wikidata":"https://www.wikidata.org/wiki/Q2658857","display_name":"Ambipolar diffusion","level":3,"score":0.8588734269142151},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7623834609985352},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6597550511360168},{"id":"https://openalex.org/C6142545","wikidata":"https://www.wikidata.org/wiki/Q1455881","display_name":"Cutoff frequency","level":2,"score":0.5836979746818542},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5672891736030579},{"id":"https://openalex.org/C38566628","wikidata":"https://www.wikidata.org/wiki/Q1634194","display_name":"Gain\u2013bandwidth product","level":5,"score":0.5569409132003784},{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.4963248372077942},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.47747015953063965},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.45744961500167847},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.43341583013534546},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.4160316288471222},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1623346209526062},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15380042791366577},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.08150452375411987},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1186/s11671-020-03429-3","doi":"https://doi.org/10.1186/s11671-020-03429-3","is_oa":true,"landing_page_url":"https://doi.org/10.1186/s11671-020-03429-3","pdf_url":"https://link.springer.com/content/pdf/10.1186/s11671-020-03429-3.pdf","source":{"id":"https://openalex.org/S55093224","display_name":"Nanoscale Research Letters","issn_l":"1556-276X","issn":["1556-276X","1931-7573"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-scientific","cwts-core","doaj","ki-jl-1","poland-20"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale Research Letters","raw_type":"journal-article"},{"id":"pmid:33068207","doi":null,"is_oa":false,"landing_page_url":"https://pubmed.ncbi.nlm.nih.gov/33068207","pdf_url":null,"source":{"id":"https://openalex.org/S4306525036","display_name":"PubMed","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale research letters","raw_type":"Journal Article"},{"id":"pmh:oai:pubmedcentral.nih.gov:7568735","doi":null,"is_oa":true,"landing_page_url":"https://pmc.ncbi.nlm.nih.gov/articles/PMC7568735/","pdf_url":null,"source":{"id":"https://openalex.org/S2764455111","display_name":"PubMed Central","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1299303238","host_organization_name":"National Institutes of Health","host_organization_lineage":["https://openalex.org/I1299303238"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale Res Lett","raw_type":"Text"},{"id":"pmh:oai:doaj.org/article:c03f7e33a6b34d82a6eb9af273b42cc8","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/c03f7e33a6b34d82a6eb9af273b42cc8","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1186/s11671-020-03429-3","doi":"https://doi.org/10.1186/s11671-020-03429-3","is_oa":true,"landing_page_url":"https://doi.org/10.1186/s11671-020-03429-3","pdf_url":"https://link.springer.com/content/pdf/10.1186/s11671-020-03429-3.pdf","source":{"id":"https://openalex.org/S55093224","display_name":"Nanoscale Research Letters","issn_l":"1556-276X","issn":["1556-276X","1931-7573"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["anvur-scientific","cwts-core","doaj","ki-jl-1","poland-20"],"host_organization":"https://openalex.org/P4310319900","host_organization_name":"Springer Science+Business Media","host_organization_lineage":["https://openalex.org/P4310319900","https://openalex.org/P4310319965"],"host_organization_lineage_names":["Springer Science+Business Media","Springer Nature"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nanoscale Research Letters","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1351921048","display_name":null,"funder_award_id":"61904136","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2717119041","display_name":null,"funder_award_id":"2019M653551","funder_id":"https://openalex.org/F4320335443","funder_display_name":"Postdoctoral Research Foundation of China"},{"id":"https://openalex.org/G8909085545","display_name":null,"funder_award_id":"2019M653551","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321543","display_name":"China Postdoctoral Science Foundation","ror":"https://ror.org/0426zh255"},{"id":"https://openalex.org/F4320335443","display_name":"Postdoctoral Research Foundation of China","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3093392007.pdf","grobid_xml":"https://content.openalex.org/works/W3093392007.grobid-xml"},"referenced_works_count":38,"referenced_works":["https://openalex.org/W85377732","https://openalex.org/W1968284496","https://openalex.org/W1983984275","https://openalex.org/W1986711874","https://openalex.org/W2005713153","https://openalex.org/W2010154091","https://openalex.org/W2018824435","https://openalex.org/W2032197740","https://openalex.org/W2038267194","https://openalex.org/W2086730441","https://openalex.org/W2086769748","https://openalex.org/W2110584581","https://openalex.org/W2122875263","https://openalex.org/W2126685667","https://openalex.org/W2132841962","https://openalex.org/W2168542137","https://openalex.org/W2169081373","https://openalex.org/W2170325087","https://openalex.org/W2305410567","https://openalex.org/W2321655804","https://openalex.org/W2330227102","https://openalex.org/W2333809535","https://openalex.org/W2410335047","https://openalex.org/W2411877044","https://openalex.org/W2546558113","https://openalex.org/W2574012774","https://openalex.org/W2575459479","https://openalex.org/W2580107960","https://openalex.org/W2592564756","https://openalex.org/W2596257285","https://openalex.org/W2616986370","https://openalex.org/W2748648285","https://openalex.org/W2765574343","https://openalex.org/W2782107875","https://openalex.org/W2799523300","https://openalex.org/W2896624513","https://openalex.org/W2952679457","https://openalex.org/W3147289055"],"related_works":["https://openalex.org/W3117239766","https://openalex.org/W4407358542","https://openalex.org/W3144560090","https://openalex.org/W2952679457","https://openalex.org/W4310055978","https://openalex.org/W2295719228","https://openalex.org/W2945053571","https://openalex.org/W2492237659","https://openalex.org/W3011667017","https://openalex.org/W4396640024"],"abstract_inverted_index":{"Abstract":[0],"In":[1],"this":[2,130],"paper,":[3],"a":[4,17,23,28,100,190],"dopingless":[5,19,81],"fin-shaped":[6,24],"SiGe":[7,25],"channel":[8,26,82],"TFET":[9],"(DF-TFET)":[10],"is":[11,63],"proposed":[12],"and":[13,27,49,72,83,91,111,120,172,185],"studied.":[14],"To":[15],"form":[16],"high-efficiency":[18],"line":[20],"tunneling":[21],"junction,":[22],"gate/source":[29],"overlap":[30,94],"are":[31,127],"induced.":[32],"Through":[33],"these":[34],"methods,":[35],"the":[36,67,73,80,86,102,121],"DF-TFET":[37,105,187],"with":[38],"high":[39],"on-state":[40,133],"current,":[41],"switching":[42],"ratio":[43],"of":[44,47,75,88,104,118,123,139,145,157,169,176],"12":[45],"orders":[46],"magnitude":[48],"no":[50],"obvious":[51],"ambipolar":[52],"effect":[53,122],"can":[54,96,106,160,179,188],"be":[55,97,161,180,189],"obtained.":[56,162,181],"High":[57],"\u03ba":[58],"material":[59],"stack":[60],"gate":[61,93],"dielectric":[62],"induced":[64],"to":[65],"improve":[66],"off-state":[68],"leakage,":[69],"interface":[70],"characteristics":[71],"reliability":[74],"DF-TFET.":[76],"Moreover,":[77],"by":[78],"using":[79],"fin":[84],"structure,":[85],"difficulties":[87],"doping":[89],"process":[90],"asymmetric":[92],"formation":[95],"resolved.":[98],"As":[99],"result,":[101],"structure":[103],"possess":[107],"good":[108],"manufacture":[109],"applicability":[110],"remarkably":[112],"reduce":[113],"footprint.":[114],"The":[115],"physical":[116],"mechanism":[117],"device":[119],"parameters":[124],"on":[125],"performance":[126,184],"studied":[128],"in":[129],"work.":[131],"Finally,":[132],"current":[134],"(":[135],"I":[136],"ON":[137],")":[138,156],"58.8":[140],"\u03bcA/\u03bcm,":[141],"minimum":[142],"subthreshold":[143,152],"swing":[144,153],"2.8":[146],"mV/dec":[147,159],"(SS":[148,154],"min":[149],"),":[150],"average":[151],"avg":[155],"18.2":[158],"With":[163,182],"improved":[164,183],"capacitance":[165],"characteristics,":[166],"cutoff":[167],"frequency":[168],"5.04":[170],"GHz":[171,178],"gain":[173],"bandwidth":[174],"product":[175],"1.29":[177],"robustness,":[186],"very":[191],"attractive":[192],"candidate":[193],"for":[194],"ultra-low-power":[195],"applications.":[196]},"counts_by_year":[{"year":2026,"cited_by_count":11},{"year":2025,"cited_by_count":13},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":12},{"year":2021,"cited_by_count":1}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2020-10-22T00:00:00"}