{"id":"https://openalex.org/W3020139617","doi":null,"title":"Electrical behavior of an inversion layer at aluminum(x)gallium(1-x)arsenide/gallium-arsenide heterojunction","display_name":"Electrical behavior of an inversion layer at aluminum(x)gallium(1-x)arsenide/gallium-arsenide heterojunction","publication_year":1988,"publication_date":"1988-01-01","ids":{"openalex":"https://openalex.org/W3020139617","mag":"3020139617"},"language":"en","primary_location":{"id":"pmh:oai:docs.lib.purdue.edu:dissertations-29804","doi":null,"is_oa":false,"landing_page_url":"https://docs.lib.purdue.edu/dissertations/AAI8900718","pdf_url":null,"source":{"id":"https://openalex.org/S4377196310","display_name":"Purdue e-Pubs (Purdue University System)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I2801333002","host_organization_name":"Purdue University System","host_organization_lineage":["https://openalex.org/I2801333002"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Theses and Dissertations Available from ProQuest","raw_type":"text"},"volume":null,"type":"dissertation","indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5112523428","display_name":"Qi-De Qian","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Qi-De Qian","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5112523428"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.6776999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.6776999831199646,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.2012999951839447,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.06159999966621399,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algaas-gaas-heterojunction","display_name":"AlGaAs/GaAs heterojunction","score":0.9649999737739563},{"id":"https://openalex.org/keywords/inversion-layer","display_name":"inversion layer","score":0.7799999713897705},{"id":"https://openalex.org/keywords/thermionic-field-emission","display_name":"thermionic field emission","score":0.9850000143051147},{"id":"https://openalex.org/keywords/thermionic-emission-theory","display_name":"thermionic emission theory","score":0.8679999709129333},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.9559999704360962},{"id":"https://openalex.org/keywords/performance-limit","display_name":"performance limit","score":0.3619999885559082}],"concepts":[{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.9304160475730896},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.685740053653717},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6804938912391663},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.6154971122741699},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5505400896072388},{"id":"https://openalex.org/C513153333","wikidata":"https://www.wikidata.org/wiki/Q663","display_name":"Aluminium","level":2,"score":0.5375463962554932},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.49874043464660645},{"id":"https://openalex.org/C2777122791","wikidata":"https://www.wikidata.org/wiki/Q415296","display_name":"Arsenide","level":3,"score":0.4703528881072998},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.13750436902046204},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13202428817749023}],"mesh":[],"locations_count":2,"locations":[{"id":"pmh:oai:docs.lib.purdue.edu:dissertations-29804","doi":null,"is_oa":false,"landing_page_url":"https://docs.lib.purdue.edu/dissertations/AAI8900718","pdf_url":null,"source":{"id":"https://openalex.org/S4377196310","display_name":"Purdue e-Pubs (Purdue University System)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I2801333002","host_organization_name":"Purdue University System","host_organization_lineage":["https://openalex.org/I2801333002"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Theses and Dissertations Available from ProQuest","raw_type":"text"},{"id":"mag:3020139617","doi":null,"is_oa":false,"landing_page_url":"https://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=29804&context=dissertations","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1979876575","https://openalex.org/W4244574828","https://openalex.org/W1844722719","https://openalex.org/W2047627614","https://openalex.org/W2131296904","https://openalex.org/W2003926489","https://openalex.org/W1494352474","https://openalex.org/W1985193275","https://openalex.org/W598169875","https://openalex.org/W2090471101"],"abstract_inverted_index":{"In":[0,59],"this":[1],"work,":[2],"we":[3,70],"present":[4],"both":[5,84],"experimental":[6],"and":[7,86,96],"theoretical":[8],"study":[9],"on":[10,83],"the":[11,21,52,63,94,100,107],"electrical":[12],"behavior":[13],"of":[14,111],"a":[15,55,68,73],"minority":[16],"carrier":[17],"inversion":[18,26,88],"layer":[19,27],"at":[20,29],"AlGaAs/GaAs":[22,30,117],"heterojunction.":[23],"The":[24,38,90],"electron":[25,85],"confined":[28],"interface":[31],"is":[32,46,80],"known":[33],"to":[34,48,61,105],"form":[35],"quantized":[36,44],"subbands.":[37],"thermionic":[39,64,75],"field":[40,76],"emission":[41,53,65,77],"from":[42,51,66],"these":[43],"subbands":[45],"expected":[47],"be":[49,103],"different":[50],"over":[54],"common":[56],"Schottky":[57],"barrier.":[58],"order":[60],"calculate":[62],"such":[67],"system,":[69],"have":[71],"developed":[72],"modified":[74],"model":[78],"which":[79],"subsequently":[81],"tested":[82],"hole":[87],"layers.":[89],"good":[91],"agreement":[92],"between":[93],"theory":[95,101],"experiment":[97],"suggests":[98],"that":[99],"may":[102],"used":[104],"predict":[106],"intrinsic":[108],"performance":[109],"limit":[110],"heterojunction":[112],"enhancement":[113],"mode":[114],"devices":[115],"in":[116],"material":[118],"system.":[119]},"counts_by_year":[],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2020-05-01T00:00:00"}