{"id":"https://openalex.org/W3015779987","doi":"https://doi.org/10.1109/jsen.2020.2987061","title":"The Impact of Gate Recess on the H\u2082 Detection Properties of Pt-AlGaN/GaN HEMT Sensors","display_name":"The Impact of Gate Recess on the H\u2082 Detection Properties of Pt-AlGaN/GaN HEMT Sensors","publication_year":2020,"publication_date":"2020-04-10","ids":{"openalex":"https://openalex.org/W3015779987","doi":"https://doi.org/10.1109/jsen.2020.2987061","mag":"3015779987"},"language":"en","primary_location":{"id":"doi:10.1109/jsen.2020.2987061","doi":"https://doi.org/10.1109/jsen.2020.2987061","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jsen.2020.2987061","pdf_url":null,"source":{"id":"https://openalex.org/S189694085","display_name":"IEEE Sensors Journal","issn_l":"1530-437X","issn":["1530-437X","1558-1748","2379-9153"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-2","ki-jl-2","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310321027","host_organization_name":"IEEE Sensors Council","host_organization_lineage":["https://openalex.org/P4310321027","https://openalex.org/P4310319808"],"host_organization_lineage_names":["IEEE Sensors Council","Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Sensors Journal","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://resolver.tudelft.nl/uuid:09aefc70-b7dc-4189-9278-363e362993a6","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009059884","display_name":"Robert Sokolovskij","orcid":"https://orcid.org/0000-0003-0447-9672","observed_orcids":["https://orcid.org/0000-0003-0447-9672"]},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CN","NL"],"is_corresponding":false,"raw_author_name":"Robert Sokolovskij","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0003-0447-9672","affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]},{"raw_affiliation_string":"School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025199994","display_name":"Jian Zhang","orcid":"https://orcid.org/0000-0003-3831-485X","observed_orcids":["https://orcid.org/0000-0003-3831-485X"]},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4391767673","display_name":"State Key Laboratory of ASIC and System","ror":"https://ror.org/01mamgv83","country_code":"CN","type":"facility","lineage":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jian Zhang","raw_affiliation_strings":["State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067","https://openalex.org/I4391767673"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109437256","display_name":"Hongze Zheng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CN","NL"],"is_corresponding":false,"raw_author_name":"Hongze Zheng","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]},{"raw_affiliation_string":"Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","institution_ids":[]},{"raw_affiliation_string":"GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","institution_ids":[]},{"raw_affiliation_string":"Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077237413","display_name":"Wenmao Li","orcid":"https://orcid.org/0000-0002-9638-8489","observed_orcids":["https://orcid.org/0000-0002-9638-8489"]},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CN","NL"],"is_corresponding":false,"raw_author_name":"Wenmao Li","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]},{"raw_affiliation_string":"Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","institution_ids":[]},{"raw_affiliation_string":"GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","institution_ids":[]},{"raw_affiliation_string":"Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100381067","display_name":"Yang Jiang","orcid":"https://orcid.org/0000-0002-5430-2931","observed_orcids":["https://orcid.org/0000-0002-5430-2931"]},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CN","NL"],"is_corresponding":false,"raw_author_name":"Yang Jiang","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]},{"raw_affiliation_string":"Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","institution_ids":[]},{"raw_affiliation_string":"GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","institution_ids":[]},{"raw_affiliation_string":"Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102365225","display_name":"Gaiying Yang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Gaiying Yang","raw_affiliation_strings":["School of Innovation and Entrepreneurship, Southern University of Science and Technology (SUSTech), Shenzhen, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Innovation and Entrepreneurship, Southern University of Science and Technology (SUSTech), Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101765075","display_name":"Hongyu Yu","orcid":"https://orcid.org/0000-0002-5756-868X","observed_orcids":["https://orcid.org/0000-0002-5756-868X"]},"institutions":[{"id":"https://openalex.org/I3045169105","display_name":"Southern University of Science and Technology","ror":"https://ror.org/049tv2d57","country_code":"CN","type":"education","lineage":["https://openalex.org/I3045169105"]},{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["CN","NL"],"is_corresponding":false,"raw_author_name":"Hongyu Yu","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-5756-868X","affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]},{"raw_affiliation_string":"Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Shenzhen, China","institution_ids":[]},{"raw_affiliation_string":"GaN Device Engineering Technology Research Center of Guangdong, Shenzhen, China,","institution_ids":[]},{"raw_affiliation_string":"Key Laboratory of Third Generation Semi-Conductor, Southern University of Science and Technology (SUSTech), Shenzhen, China","institution_ids":["https://openalex.org/I3045169105"]},{"raw_affiliation_string":"Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064630364","display_name":"Pasqualina Maria Sarro","orcid":"https://orcid.org/0000-0002-2766-0880","observed_orcids":["https://orcid.org/0000-0002-2766-0880"]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Pasqualina M. Sarro","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands"],"raw_orcid":"https://orcid.org/0000-0002-2766-0880","affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5000424567","display_name":"Guoqi Zhang","orcid":"https://orcid.org/0000-0002-8023-5170","observed_orcids":["https://orcid.org/0000-0002-8023-5170","https://orcid.org/0000-0001-6071-8469"]},"institutions":[{"id":"https://openalex.org/I98358874","display_name":"Delft University of Technology","ror":"https://ror.org/02e2c7k09","country_code":"NL","type":"education","lineage":["https://openalex.org/I98358874"]}],"countries":["NL"],"is_corresponding":false,"raw_author_name":"Guoqi Zhang","raw_affiliation_strings":["Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands"],"raw_orcid":"https://orcid.org/0000-0002-8023-5170","affiliations":[{"raw_affiliation_string":"Department of Microelectronics, Delft University of Technology, CD Delft, The Netherlands","institution_ids":["https://openalex.org/I98358874"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2045,"currency":"USD","value_usd":2045},"apc_paid":null,"fwci":1.4615,"has_fulltext":false,"cited_by_count":30,"citation_normalized_percentile":{"value":0.80559478,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":98},"biblio":{"volume":"20","issue":"16","first_page":"8947","last_page":"8955"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.015300000086426735,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11472","display_name":"Analytical Chemistry and Sensors","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/1602","display_name":"Analytical Chemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hydrogen-sensing","display_name":"hydrogen detection","score":0.7919999957084656},{"id":"https://openalex.org/keywords/threshold-voltage-shift","display_name":"threshold voltage shift","score":0.9810000061988831},{"id":"https://openalex.org/keywords/sensing-response","display_name":"sensing response","score":0.718999981880188},{"id":"https://openalex.org/keywords/response-and-recovery-time","display_name":"response and recovery time","score":0.9409999847412109},{"id":"https://openalex.org/keywords/power-consumption","display_name":"power consumption","score":0.8149999976158142},{"id":"https://openalex.org/keywords/gas-sensors","display_name":"gas sensors","score":0.33500000834465027}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8011006116867065},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.394167959690094},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3697003722190857},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3686680495738983},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3540225028991699},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3466724157333374},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3292476534843445},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32301419973373413},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.28625771403312683},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20773643255233765},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.18439513444900513},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17197579145431519},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1288042664527893},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.09852012991905212}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.1109/jsen.2020.2987061","doi":"https://doi.org/10.1109/jsen.2020.2987061","is_oa":false,"landing_page_url":"https://doi.org/10.1109/jsen.2020.2987061","pdf_url":null,"source":{"id":"https://openalex.org/S189694085","display_name":"IEEE Sensors Journal","issn_l":"1530-437X","issn":["1530-437X","1558-1748","2379-9153"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-2","ki-jl-2","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310321027","host_organization_name":"IEEE Sensors Council","host_organization_lineage":["https://openalex.org/P4310321027","https://openalex.org/P4310319808"],"host_organization_lineage_names":["IEEE Sensors Council","Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Sensors Journal","raw_type":"journal-article"},{"id":"pmh:oai:tudelft.nl:uuid:09aefc70-b7dc-4189-9278-363e362993a6","doi":null,"is_oa":false,"landing_page_url":"http://resolver.tudelft.nl/uuid:09aefc70-b7dc-4189-9278-363e362993a6","pdf_url":null,"source":{"id":"https://openalex.org/S4306400906","display_name":"Research Repository (Delft University of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I98358874","host_organization_name":"Delft University of Technology","host_organization_lineage":["https://openalex.org/I98358874"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"journal article"},{"id":"pmh:oai:tudelft.nl:uuid:34ee1c5b-8f44-490a-b6a7-d81d72e18cf6","doi":null,"is_oa":false,"landing_page_url":"http://resolver.tudelft.nl/uuid:34ee1c5b-8f44-490a-b6a7-d81d72e18cf6","pdf_url":null,"source":{"id":"https://openalex.org/S4306400906","display_name":"Research Repository (Delft University of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I98358874","host_organization_name":"Delft University of Technology","host_organization_lineage":["https://openalex.org/I98358874"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"journal article"},{"id":"pmh:tud:oai:tudelft.nl:uuid:09aefc70-b7dc-4189-9278-363e362993a6","doi":null,"is_oa":true,"landing_page_url":"http://resolver.tudelft.nl/uuid:09aefc70-b7dc-4189-9278-363e362993a6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401843","display_name":"Data Archiving and Networked Services (DANS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1322597698","host_organization_name":"Royal Netherlands Academy of Arts and Sciences","host_organization_lineage":["https://openalex.org/I1322597698"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Sensors Journal, 20(16)","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:tud:oai:tudelft.nl:uuid:34ee1c5b-8f44-490a-b6a7-d81d72e18cf6","doi":null,"is_oa":true,"landing_page_url":"http://resolver.tudelft.nl/uuid:34ee1c5b-8f44-490a-b6a7-d81d72e18cf6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401843","display_name":"Data Archiving and Networked Services (DANS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1322597698","host_organization_name":"Royal Netherlands Academy of Arts and Sciences","host_organization_lineage":["https://openalex.org/I1322597698"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Sensors, 20(16)","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"pmh:tud:oai:tudelft.nl:uuid:09aefc70-b7dc-4189-9278-363e362993a6","doi":null,"is_oa":true,"landing_page_url":"http://resolver.tudelft.nl/uuid:09aefc70-b7dc-4189-9278-363e362993a6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401843","display_name":"Data Archiving and Networked Services (DANS)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I1322597698","host_organization_name":"Royal Netherlands Academy of Arts and Sciences","host_organization_lineage":["https://openalex.org/I1322597698"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Sensors Journal, 20(16)","raw_type":"info:eu-repo/semantics/article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G1300172290","display_name":null,"funder_award_id":"#2019B010142001","funder_id":"https://openalex.org/F4320324202","funder_display_name":"Guangdong Science and Technology Department"},{"id":"https://openalex.org/G4130946862","display_name":null,"funder_award_id":"#2019B010128001","funder_id":"https://openalex.org/F4320324202","funder_display_name":"Guangdong Science and Technology Department"}],"funders":[{"id":"https://openalex.org/F4320324202","display_name":"Guangdong Science and Technology Department","ror":"https://ror.org/00tjzgn92"},{"id":"https://openalex.org/F4320327605","display_name":"Southern University of Science and Technology","ror":null}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W1444379376","https://openalex.org/W1968966028","https://openalex.org/W1971958003","https://openalex.org/W1974114631","https://openalex.org/W1982353147","https://openalex.org/W1986603719","https://openalex.org/W1991480083","https://openalex.org/W1999134941","https://openalex.org/W1999584556","https://openalex.org/W2003366520","https://openalex.org/W2003784263","https://openalex.org/W2010867602","https://openalex.org/W2028231385","https://openalex.org/W2028424230","https://openalex.org/W2037719421","https://openalex.org/W2041718010","https://openalex.org/W2050878962","https://openalex.org/W2051634076","https://openalex.org/W2053280643","https://openalex.org/W2058075221","https://openalex.org/W2062431688","https://openalex.org/W2065851146","https://openalex.org/W2071858654","https://openalex.org/W2075122094","https://openalex.org/W2085327566","https://openalex.org/W2098131889","https://openalex.org/W2099623294","https://openalex.org/W2122510259","https://openalex.org/W2135219556","https://openalex.org/W2153448882","https://openalex.org/W2169301346","https://openalex.org/W2171657495","https://openalex.org/W2215118093","https://openalex.org/W2568026708","https://openalex.org/W2569603656","https://openalex.org/W2740175082","https://openalex.org/W2886907585","https://openalex.org/W2971614181","https://openalex.org/W3000030909","https://openalex.org/W6781759019"],"related_works":["https://openalex.org/W3201195557","https://openalex.org/W3000030909","https://openalex.org/W7163740926","https://openalex.org/W3213982705","https://openalex.org/W2016037617","https://openalex.org/W2782415028","https://openalex.org/W7135099052","https://openalex.org/W2019238697","https://openalex.org/W2004862607","https://openalex.org/W2886907585"],"abstract_inverted_index":{"The":[0,120,150],"present":[1],"work":[2],"reports":[3],"on":[4],"the":[5,57,93,154],"hydrogen":[6],"gas":[7],"detection":[8],"properties":[9],"of":[10,98,153],"Pt-AlGaN/GaN":[11],"high":[12,51],"electron":[13],"mobility":[14],"transistor":[15],"(HEMT)":[16],"sensors":[17,107,155],"with":[18,23,41,157],"recessed":[19],"gate":[20,24,109],"structure.":[21],"Devices":[22],"recess":[25,55,70,88,148,159],"depths":[26],"from":[27,63,130,136,142,161],"5":[28],"to":[29,65,105,132,138,145,163],"15":[30,146],"nm":[31,144,147],"were":[32],"fabricated":[33],"using":[34],"a":[35,75,86],"precision":[36],"cyclic":[37],"etching":[38],"method,":[39],"examined":[40],"AFM,":[42],"STEM":[43],"and":[44,46,122,135],"EDS,":[45],"tested":[47,118],"towards":[48,100,125],"H2response":[49,115],"at":[50],"temperature.":[52],"With":[53],"increasing":[54,158],"depth,":[56],"threshold":[58],"voltage":[59],"(${V}_{\\textit":[60],"{TH}}$)":[61],"shifted":[62],"\u22121.57":[64],"1.49":[66],"V.":[67],"A":[68],"shallow":[69],"(5":[71],"nm)":[72,90],"resulted":[73,91],"in":[74,79,92],"1.03":[76],"mA":[77],"increase":[78],"signal":[80],"variation":[81],"($\\Delta":[82],"{I}_{\\textit":[83],"{DS}}$),":[84],"while":[85],"deep":[87],"(15":[89],"highest":[94],"sensing":[95],"response":[96,121],"(${S}$)":[97],"145.8%":[99],"300":[101],"ppm":[102,127],"H2as":[103],"compared":[104],"reference":[106],"without":[108],"recess.":[110],"Transient":[111],"measurements":[112],"demonstrated":[113],"reversible":[114],"for":[116],"all":[117],"devices.":[119],"recovery":[123],"time":[124],"250":[126],"gradually":[128],"decreased":[129],"7.3":[131],"2.5":[133],"min":[134,140],"29.2":[137],"8.85":[139],"going":[141],"0":[143],"depth.":[149],"power":[151],"consumption":[152],"reduced":[156],"depth":[160],"146.6":[162],"2.95":[164],"mW.":[165]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":7},{"year":2021,"cited_by_count":7}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2020-04-17T00:00:00"}