{"id":"https://openalex.org/W3013554540","doi":"https://doi.org/10.1149/2162-8777/ab8019","title":"Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors","display_name":"Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors","publication_year":2020,"publication_date":"2020-01-03","ids":{"openalex":"https://openalex.org/W3013554540","doi":"https://doi.org/10.1149/2162-8777/ab8019","mag":"3013554540"},"language":"en","primary_location":{"id":"doi:10.1149/2162-8777/ab8019","doi":"https://doi.org/10.1149/2162-8777/ab8019","is_oa":false,"landing_page_url":"https://doi.org/10.1149/2162-8777/ab8019","pdf_url":null,"source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016157683","display_name":"Patrick H. Carey","orcid":"https://orcid.org/0000-0002-8826-3977","observed_orcids":["https://orcid.org/0000-0002-8826-3977"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Patrick H. Carey","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32608, United States of America"],"raw_orcid":"https://orcid.org/0000-0002-8826-3977","affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32608, United States of America","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fan Ren","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32608, United States of America"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32608, United States of America","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088859102","display_name":"Jinho Bae","orcid":"https://orcid.org/0000-0002-5298-0122","observed_orcids":["https://orcid.org/0000-0002-5298-0122"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinho Bae","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100462779","display_name":"Jihyun Kim","orcid":"https://orcid.org/0000-0002-5634-8394","observed_orcids":["https://orcid.org/0000-0002-5634-8394","https://orcid.org/0000-0002-5119-6627"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jihyun Kim","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea"],"raw_orcid":"https://orcid.org/0000-0002-5634-8394","affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Stephen J. Pearton","raw_affiliation_strings":["Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32608, United States of America"],"raw_orcid":"https://orcid.org/0000-0001-6498-1256","affiliations":[{"raw_affiliation_string":"Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32608, United States of America","institution_ids":["https://openalex.org/I33213144"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5016157683"],"corresponding_institution_ids":["https://openalex.org/I33213144"],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":0.1719,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.43932223,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":93},"biblio":{"volume":"9","issue":"3","first_page":"035008","last_page":"035008"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.6455000042915344,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.6455000042915344,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.3280999958515167,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0032999999821186066,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/alpha-particle-irradiation","display_name":"alpha particle irradiation","score":0.9760000109672546},{"id":"https://openalex.org/keywords/radiation-damage","display_name":"radiation damage","score":0.4869999885559082},{"id":"https://openalex.org/keywords/carrier-removal-rate","display_name":"carrier removal rate","score":0.8730000257492065},{"id":"https://openalex.org/keywords/gate-lag","display_name":"gate lag","score":0.7110000252723694},{"id":"https://openalex.org/keywords/current-collapse","display_name":"current collapse","score":0.7239999771118164},{"id":"https://openalex.org/keywords/radiation-induced-defects","display_name":"radiation-induced defects","score":0.8370000123977661},{"id":"https://openalex.org/keywords/virtual-gate","display_name":"virtual gate","score":0.7329999804496765},{"id":"https://openalex.org/keywords/high-fluence-irradiation","display_name":"high fluence irradiation","score":0.6019999980926514}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.9022389650344849},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7174039483070374},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6333892345428467},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.625174880027771},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.6157952547073364},{"id":"https://openalex.org/C205049153","wikidata":"https://www.wikidata.org/wiki/Q2698605","display_name":"Polarization (electrochemistry)","level":2,"score":0.5284093618392944},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.5185368657112122},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4957900941371918},{"id":"https://openalex.org/C513153333","wikidata":"https://www.wikidata.org/wiki/Q663","display_name":"Aluminium","level":2,"score":0.42939361929893494},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.12160217761993408},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1091088056564331},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09116759896278381},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/2162-8777/ab8019","doi":"https://doi.org/10.1149/2162-8777/ab8019","is_oa":false,"landing_page_url":"https://doi.org/10.1149/2162-8777/ab8019","pdf_url":null,"source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G171012347","display_name":null,"funder_award_id":"HDTRA1-17-1- 011","funder_id":"https://openalex.org/F4320332186","funder_display_name":"Defense Threat Reduction Agency"},{"id":"https://openalex.org/G4902162394","display_name":null,"funder_award_id":"20172010104830","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"},{"id":"https://openalex.org/G6155946018","display_name":null,"funder_award_id":"2018R1D1A1A09083917","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"}],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320332186","display_name":"Defense Threat Reduction Agency","ror":"https://ror.org/04tz64554"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":43,"referenced_works":["https://openalex.org/W1506316404","https://openalex.org/W1922924821","https://openalex.org/W1971556256","https://openalex.org/W1979900228","https://openalex.org/W1980485128","https://openalex.org/W1986591620","https://openalex.org/W1995866969","https://openalex.org/W1998267143","https://openalex.org/W2001895270","https://openalex.org/W2002158043","https://openalex.org/W2014628253","https://openalex.org/W2015191158","https://openalex.org/W2015930517","https://openalex.org/W2016464355","https://openalex.org/W2017584544","https://openalex.org/W2035213182","https://openalex.org/W2054060080","https://openalex.org/W2061267700","https://openalex.org/W2076380026","https://openalex.org/W2091053189","https://openalex.org/W2091261966","https://openalex.org/W2112712120","https://openalex.org/W2119665082","https://openalex.org/W2136033905","https://openalex.org/W2161553270","https://openalex.org/W2199842651","https://openalex.org/W2259768559","https://openalex.org/W2316834292","https://openalex.org/W2333874606","https://openalex.org/W2461137253","https://openalex.org/W2504818077","https://openalex.org/W2515791624","https://openalex.org/W2556966212","https://openalex.org/W2621894085","https://openalex.org/W2754817007","https://openalex.org/W2756908295","https://openalex.org/W2766131587","https://openalex.org/W2786019483","https://openalex.org/W2810667584","https://openalex.org/W2814384156","https://openalex.org/W2890588001","https://openalex.org/W2913011638","https://openalex.org/W3006398883"],"related_works":["https://openalex.org/W3006398883","https://openalex.org/W3041498940","https://openalex.org/W2748110643","https://openalex.org/W2091261966","https://openalex.org/W6903025178","https://openalex.org/W2738571843","https://openalex.org/W1990535300","https://openalex.org/W1623746362","https://openalex.org/W2814384156","https://openalex.org/W2075211164"],"abstract_inverted_index":{"Alpha":[0],"particle":[1],"irradiation":[2],"at":[3,39],"18":[4],"MeV":[5],"was":[6],"performed":[7],"on":[8],"high":[9],"aluminum":[10],"content":[11],"AlGaN":[12],"Polarization":[13],"Doped":[14],"Field":[15],"Effect":[16],"Transistors":[17],"(POLFTs)":[18],"and":[19,23,37,48,67],"characterized":[20],"by":[21],"DC":[22,32],"switching":[24],"measurements.":[25],"The":[26,83],"POLFETs":[27,84],"underwent":[28],"a":[29,97,108,113],"reduction":[30],"in":[31,60],"saturation":[33],"current":[34,105],"of":[35,41,63,110,112],"23%":[36],"33%":[38],"fluences":[40],"1":[42],"\u00d7":[43,50],"10":[44,51],"13":[45,52],"cm":[46,53,65,69],"\u22122":[47,54],"3":[49],",":[55],"respectively.":[56],"Carrier":[57],"removal":[58],"rates":[59],"the":[61],"range":[62],"2520":[64],"\u22121":[66,70],"7100":[68],"were":[71],"observed,":[72],"which":[73,102],"are":[74],"similar":[75],"to":[76,96],"previously":[77],"reported":[78],"values":[79],"for":[80],"GaN":[81,99],"HEMTs.":[82],"under":[85],"100":[86],"kHz":[87],"gate":[88,115],"lag":[89],"measurement":[90],"demonstrated":[91],"zero":[92],"degradation":[93],"while":[94],"compared":[95],"traditional":[98],"HEMT":[100],"device":[101],"suffered":[103],"serious":[104],"collapse":[106],"as":[107],"result":[109],"formation":[111],"virtual":[114],"from":[116],"radiation-induced":[117],"defects.":[118]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2020-04-03T00:00:00"}