{"id":"https://openalex.org/W3010431987","doi":"https://doi.org/10.1088/2053-1591/ab7c84","title":"Enhancing reliability of InGaN/GaN light-emitting diodes by controlling the etching profile of the current blocking layer","display_name":"Enhancing reliability of InGaN/GaN light-emitting diodes by controlling the etching profile of the current blocking layer","publication_year":2020,"publication_date":"2020-03-01","ids":{"openalex":"https://openalex.org/W3010431987","doi":"https://doi.org/10.1088/2053-1591/ab7c84","mag":"3010431987"},"language":"en","primary_location":{"id":"doi:10.1088/2053-1591/ab7c84","doi":"https://doi.org/10.1088/2053-1591/ab7c84","is_oa":true,"landing_page_url":"https://doi.org/10.1088/2053-1591/ab7c84","pdf_url":"https://iopscience.iop.org/article/10.1088/2053-1591/ab7c84/pdf","source":{"id":"https://openalex.org/S4210216311","display_name":"Materials Research Express","issn_l":"2053-1591","issn":["2053-1591"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","ki-jl-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Research Express","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://iopscience.iop.org/article/10.1088/2053-1591/ab7c84/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025448493","display_name":"Shui\u2010Hsiang Su","orcid":"https://orcid.org/0000-0001-6354-4142","observed_orcids":["https://orcid.org/0000-0001-6354-4142"]},"institutions":[{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]}],"countries":["TW"],"is_corresponding":true,"raw_author_name":"Shui-Hsiang Su","raw_affiliation_strings":["Department of Electronic Engineering, I-Shou University, Kaohsiung 84001, Taiwan"],"raw_orcid":"https://orcid.org/0000-0001-6354-4142","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, I-Shou University, Kaohsiung 84001, Taiwan","institution_ids":["https://openalex.org/I98298690"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110642432","display_name":"Chun-Lung Tseng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I189004537","display_name":"Epistar (Taiwan)","ror":"https://ror.org/034y4c446","country_code":"TW","type":"company","lineage":["https://openalex.org/I189004537"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chun-Lung Tseng","raw_affiliation_strings":["EPISTAR Corporation, Tainan 744, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EPISTAR Corporation, Tainan 744, Taiwan","institution_ids":["https://openalex.org/I189004537"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108706180","display_name":"Ching-Hsing Shen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I189004537","display_name":"Epistar (Taiwan)","ror":"https://ror.org/034y4c446","country_code":"TW","type":"company","lineage":["https://openalex.org/I189004537"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ching-Hsing Shen","raw_affiliation_strings":["EPISTAR Corporation, Tainan 744, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EPISTAR Corporation, Tainan 744, Taiwan","institution_ids":["https://openalex.org/I189004537"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004277708","display_name":"I-Jou Hsieh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"I-Jou Hsieh","raw_affiliation_strings":["Department of Electronic Engineering, I-Shou University, Kaohsiung 84001, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, I-Shou University, Kaohsiung 84001, Taiwan","institution_ids":["https://openalex.org/I98298690"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101893847","display_name":"Yen-Sheng Lin","orcid":"https://orcid.org/0000-0002-2908-432X","observed_orcids":["https://orcid.org/0000-0002-2908-432X"]},"institutions":[{"id":"https://openalex.org/I98298690","display_name":"I-Shou University","ror":"https://ror.org/04d7e4m76","country_code":"TW","type":"education","lineage":["https://openalex.org/I98298690"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yen-Sheng Lin","raw_affiliation_strings":["Department of Electronic Engineering, I-Shou University, Kaohsiung 84001, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, I-Shou University, Kaohsiung 84001, Taiwan","institution_ids":["https://openalex.org/I98298690"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5025448493"],"corresponding_institution_ids":["https://openalex.org/I98298690"],"apc_list":{"value":2000,"currency":"USD","value_usd":2000},"apc_paid":{"value":2000,"currency":"USD","value_usd":2000},"fwci":0.0,"has_fulltext":true,"cited_by_count":1,"citation_normalized_percentile":{"value":0.02327351,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"7","issue":"3","first_page":"036404","last_page":"036404"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingan-gan-light-emitting-diodes","display_name":"InGaN/GaN light-emitting diodes","score":0.9929999709129333},{"id":"https://openalex.org/keywords/current-blocking-layer","display_name":"current blocking layer","score":0.9909999966621399},{"id":"https://openalex.org/keywords/silica","display_name":"silica","score":0.8880000114440918},{"id":"https://openalex.org/keywords/low-temperature-deposition","display_name":"low-temperature deposition","score":0.5730000138282776},{"id":"https://openalex.org/keywords/high-temperature-deposition","display_name":"high-temperature deposition","score":0.7269999980926514},{"id":"https://openalex.org/keywords/etching-profile","display_name":"etching profile","score":0.7319999933242798},{"id":"https://openalex.org/keywords/sidewall-angle","display_name":"sidewall angle","score":0.9340000152587891},{"id":"https://openalex.org/keywords/current-spreading","display_name":"current spreading","score":0.9869999885559082},{"id":"https://openalex.org/keywords/power-degradation","display_name":"power degradation","score":0.6470000147819519},{"id":"https://openalex.org/keywords/step-coverage","display_name":"step coverage","score":0.824999988079071}],"concepts":[{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.8138686418533325},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.753363847732544},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7377842664718628},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6177317500114441},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.597756028175354},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5719026923179626},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5587719082832336},{"id":"https://openalex.org/C38347018","wikidata":"https://www.wikidata.org/wiki/Q905958","display_name":"Plasma-enhanced chemical vapor deposition","level":3,"score":0.5015964508056641},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4801437556743622},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4254935681819916},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.23703965544700623},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.19089072942733765},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.11650049686431885},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1088/2053-1591/ab7c84","doi":"https://doi.org/10.1088/2053-1591/ab7c84","is_oa":true,"landing_page_url":"https://doi.org/10.1088/2053-1591/ab7c84","pdf_url":"https://iopscience.iop.org/article/10.1088/2053-1591/ab7c84/pdf","source":{"id":"https://openalex.org/S4210216311","display_name":"Materials Research Express","issn_l":"2053-1591","issn":["2053-1591"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","ki-jl-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Research Express","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:dc4b594742d64b879e71711f5706bb6b","doi":null,"is_oa":false,"landing_page_url":"https://doaj.org/article/dc4b594742d64b879e71711f5706bb6b","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Materials Research Express, Vol 7, Iss 3, p 036404 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1088/2053-1591/ab7c84","doi":"https://doi.org/10.1088/2053-1591/ab7c84","is_oa":true,"landing_page_url":"https://doi.org/10.1088/2053-1591/ab7c84","pdf_url":"https://iopscience.iop.org/article/10.1088/2053-1591/ab7c84/pdf","source":{"id":"https://openalex.org/S4210216311","display_name":"Materials Research Express","issn_l":"2053-1591","issn":["2053-1591"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","ki-jl-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320083","host_organization_name":"IOP Publishing","host_organization_lineage":["https://openalex.org/P4310320083","https://openalex.org/P4310311669"],"host_organization_lineage_names":["IOP Publishing","Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Research Express","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321040","display_name":"National Science Council","ror":"https://ror.org/02kv4zf79"},{"id":"https://openalex.org/F4320323498","display_name":"Epistar Corporation","ror":"https://ror.org/034y4c446"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3010431987.pdf","grobid_xml":"https://content.openalex.org/works/W3010431987.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1511891793","https://openalex.org/W1719473535","https://openalex.org/W1968358281","https://openalex.org/W1977709912","https://openalex.org/W1979699238","https://openalex.org/W1997401914","https://openalex.org/W1997448556","https://openalex.org/W2000052732","https://openalex.org/W2002617789","https://openalex.org/W2004134527","https://openalex.org/W2008270455","https://openalex.org/W2030303395","https://openalex.org/W2035603946","https://openalex.org/W2036646131","https://openalex.org/W2055953934","https://openalex.org/W2075810353","https://openalex.org/W2081399359","https://openalex.org/W2083560686","https://openalex.org/W2089839484","https://openalex.org/W2105168279","https://openalex.org/W2111380101","https://openalex.org/W2122597412","https://openalex.org/W2152834703","https://openalex.org/W2154479989","https://openalex.org/W2273420168","https://openalex.org/W2769410768","https://openalex.org/W2896783215","https://openalex.org/W2925506910","https://openalex.org/W2955025150","https://openalex.org/W4254261188"],"related_works":["https://openalex.org/W1997358126","https://openalex.org/W2335569831","https://openalex.org/W2017847573","https://openalex.org/W1998926005","https://openalex.org/W2613911138","https://openalex.org/W1971198771","https://openalex.org/W2122597412","https://openalex.org/W2891938483","https://openalex.org/W2032624909","https://openalex.org/W2025989571"],"abstract_inverted_index":{"Abstract":[0],"SiO2":[1,18,114,146,166],"was":[2,20],"used":[3],"as":[4,60,62,132,134,147,149],"the":[5,12,47,68,79,99,110,112,127,137,158,164,176,190],"current":[6,100,123,180],"blocking":[7],"layer":[8],"(CBL)":[9],"during":[10,64],"fabricating":[11],"InGaN/GaN-based":[13],"light-emitting":[14],"diodes":[15],"(LEDs).":[16],"The":[17,51,92],"film":[19,96,121],"prepared":[21],"by":[22],"plasma":[23],"enhanced":[24],"chemical":[25],"vapor":[26],"deposition":[27],"(PECVD)":[28],"at":[29],"a":[30,38,85,150,168],"lower":[31],"temperature":[32,40,81],"(LT)":[33],"of":[34,42,49,53,119,144,172,182,193],"180":[35],"\u00b0C":[36,44],"and":[37,70,98,125,161,179],"higher":[39],"(HT)":[41],"280":[43],"for":[45,122,195],"characterizing":[46],"reliability":[48,139],"LEDs.":[50],"degradation":[52],"output":[54],"power":[55,107],"in":[56,67,136,157],"LT-CBL":[57],"LED":[58],"is":[59,103,186],"high":[61],"6.8%":[63],"1000":[65],"h":[66],"high-temperature":[69],"humidity":[71],"(85":[72],"\u00b0C/85":[73],"RH)":[74],"condition.":[75],"Experimental":[76],"results":[77],"demonstrate":[78],"low":[80,133],"grown":[82],"CBL":[83,152,194],"forms":[84],"larger":[86],"side-wall":[87,94,170,191],"angle":[88,171],"via":[89],"wet":[90],"etching.":[91],"thinner":[93],"ITO":[95,120],"cracks":[97],"spreading":[101,124,181],"effect":[102],"suppressed,":[104],"causing":[105],"drastic":[106],"degradation.":[108],"On":[109],"contrary,":[111],"HT-CBL":[113,128,145,165],"demonstrates":[115],"optimal":[116],"step":[117,177],"coverage":[118,178],"then":[126],"LEDs":[129],"slightly":[130],"degrade":[131],"5%":[135],"accelerated":[138],"test.":[140],"A":[141],"dense":[142],"quality":[143],"well":[148],"good":[151],"decreased":[153],"parasitic":[154],"optical":[155],"absorption":[156],"p-pad":[159],"electrode":[160],"p-finger.":[162],"Besides,":[163],"showed":[167],"small":[169],"40\u02da":[173],"which":[174],"increased":[175],"ITO.":[183],"An":[184],"approach":[185],"conducted":[187],"to":[188],"confirm":[189],"profile":[192],"each":[196],"process.":[197]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2020-03-13T00:00:00"}