{"id":"https://openalex.org/W3007699208","doi":"https://doi.org/10.1002/adom.201901833","title":"Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga 2 O 3 Thin\u2010Film Transistors","display_name":"Boosted UV Photodetection Performance in Chemically Etched Amorphous Ga 2 O 3 Thin\u2010Film Transistors","publication_year":2020,"publication_date":"2020-02-24","ids":{"openalex":"https://openalex.org/W3007699208","doi":"https://doi.org/10.1002/adom.201901833","mag":"3007699208"},"language":"en","primary_location":{"id":"doi:10.1002/adom.201901833","doi":"https://doi.org/10.1002/adom.201901833","is_oa":false,"landing_page_url":"https://doi.org/10.1002/adom.201901833","pdf_url":null,"source":{"id":"https://openalex.org/S108229257","display_name":"Advanced Optical Materials","issn_l":"2195-1071","issn":["2195-1071"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Optical Materials","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101603383","display_name":"Zuyin Han","orcid":"https://orcid.org/0000-0003-2458-2677","observed_orcids":["https://orcid.org/0000-0003-2458-2677"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210159876","display_name":"Institute of Physics","ror":"https://ror.org/05cvf7v30","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zuyin Han","raw_affiliation_strings":["Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","School of Physical Sciences University of Chinese Academy of Sciences  Beijing 100049 China","Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China"],"raw_orcid":"https://orcid.org/0000-0003-2458-2677","affiliations":[{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"School of Physical Sciences University of Chinese Academy of Sciences  Beijing 100049 China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062240625","display_name":"Huili Liang","orcid":"https://orcid.org/0000-0002-5164-4290","observed_orcids":["https://orcid.org/0000-0002-5164-4290"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210114608","display_name":"Songshan Lake Materials Laboratory","ror":"https://ror.org/020vtf184","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210114608","https://openalex.org/I4210137180","https://openalex.org/I4210159876"]},{"id":"https://openalex.org/I4210159876","display_name":"Institute of Physics","ror":"https://ror.org/05cvf7v30","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Huili Liang","raw_affiliation_strings":["Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","Songshan Lake Materials Laboratory  Dongguan Guangdong 523808 China","Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"Songshan Lake Materials Laboratory  Dongguan Guangdong 523808 China","institution_ids":["https://openalex.org/I4210114608"]},{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China","institution_ids":["https://openalex.org/I4210114608"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028387086","display_name":"Wenxing Huo","orcid":"https://orcid.org/0000-0002-1832-9328","observed_orcids":["https://orcid.org/0000-0002-1832-9328"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210159876","display_name":"Institute of Physics","ror":"https://ror.org/05cvf7v30","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wenxing Huo","raw_affiliation_strings":["Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","School of Physical Sciences University of Chinese Academy of Sciences  Beijing 100049 China","Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"School of Physical Sciences University of Chinese Academy of Sciences  Beijing 100049 China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057543611","display_name":"Xiaoshan Zhu","orcid":"https://orcid.org/0000-0001-5924-856X","observed_orcids":["https://orcid.org/0000-0001-5924-856X"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210159876","display_name":"Institute of Physics","ror":"https://ror.org/05cvf7v30","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoshan Zhu","raw_affiliation_strings":["Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100625069","display_name":"Xiaolong Du","orcid":"https://orcid.org/0000-0002-3957-8403","observed_orcids":["https://orcid.org/0000-0002-3957-8403"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210114608","display_name":"Songshan Lake Materials Laboratory","ror":"https://ror.org/020vtf184","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210114608","https://openalex.org/I4210137180","https://openalex.org/I4210159876"]},{"id":"https://openalex.org/I4210159876","display_name":"Institute of Physics","ror":"https://ror.org/05cvf7v30","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"id":"https://openalex.org/I4210165038","display_name":"University of Chinese Academy of Sciences","ror":"https://ror.org/05qbk4x57","country_code":"CN","type":"education","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaolong Du","raw_affiliation_strings":["Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","School of Physical Sciences University of Chinese Academy of Sciences  Beijing 100049 China","Songshan Lake Materials Laboratory  Dongguan Guangdong 523808 China","Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China","Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"School of Physical Sciences University of Chinese Academy of Sciences  Beijing 100049 China","institution_ids":["https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Songshan Lake Materials Laboratory  Dongguan Guangdong 523808 China","institution_ids":["https://openalex.org/I4210114608"]},{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049 China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210165038"]},{"raw_affiliation_string":"Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China","institution_ids":["https://openalex.org/I4210114608"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102020664","display_name":"Zengxia Mei","orcid":"https://orcid.org/0000-0002-2034-659X","observed_orcids":["https://orcid.org/0000-0002-2034-659X"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210114608","display_name":"Songshan Lake Materials Laboratory","ror":"https://ror.org/020vtf184","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210114608","https://openalex.org/I4210137180","https://openalex.org/I4210159876"]},{"id":"https://openalex.org/I4210159876","display_name":"Institute of Physics","ror":"https://ror.org/05cvf7v30","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Zengxia Mei","raw_affiliation_strings":["Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","Songshan Lake Materials Laboratory  Dongguan Guangdong 523808 China","Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences  Beijing 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"Songshan Lake Materials Laboratory  Dongguan Guangdong 523808 China","institution_ids":["https://openalex.org/I4210114608"]},{"raw_affiliation_string":"Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 P. R. China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]},{"raw_affiliation_string":"Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808 China","institution_ids":["https://openalex.org/I4210114608"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5062240625","https://openalex.org/A5102020664"],"corresponding_institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210114608","https://openalex.org/I4210159876"],"apc_list":{"value":3800,"currency":"USD","value_usd":3800},"apc_paid":null,"fwci":10.8727,"has_fulltext":false,"cited_by_count":146,"citation_normalized_percentile":{"value":0.98313093,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":100},"biblio":{"volume":"8","issue":"8","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9833999872207642,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.016100000590085983,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-ga2o3","display_name":"amorphous Ga2O3","score":0.9279999732971191},{"id":"https://openalex.org/keywords/thin-film-transistors","display_name":"thin-film transistors","score":0.9459999799728394},{"id":"https://openalex.org/keywords/uv-photodetection","display_name":"UV photodetection","score":0.9279999732971191},{"id":"https://openalex.org/keywords/phototransistor","display_name":"phototransistor","score":0.8629999756813049},{"id":"https://openalex.org/keywords/chemical-etching","display_name":"chemical etching","score":0.9459999799728394},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.671999990940094},{"id":"https://openalex.org/keywords/responsivity","display_name":"responsivity","score":0.6629999876022339},{"id":"https://openalex.org/keywords/specific-detectivity","display_name":"detectivity","score":0.9210000038146973},{"id":"https://openalex.org/keywords/uv-imaging","display_name":"ultraviolet imaging","score":0.40799999237060547}],"concepts":[{"id":"https://openalex.org/C85604662","wikidata":"https://www.wikidata.org/wiki/Q7187735","display_name":"Photodetection","level":3,"score":0.8671778440475464},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8653609752655029},{"id":"https://openalex.org/C178889773","wikidata":"https://www.wikidata.org/wiki/Q7316011","display_name":"Responsivity","level":3,"score":0.8168004155158997},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7446940541267395},{"id":"https://openalex.org/C751236","wikidata":"https://www.wikidata.org/wiki/Q175943","display_name":"Photodiode","level":2,"score":0.6331628561019897},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.6185469031333923},{"id":"https://openalex.org/C201999631","wikidata":"https://www.wikidata.org/wiki/Q2601129","display_name":"Photoconductivity","level":2,"score":0.569155216217041},{"id":"https://openalex.org/C2778448536","wikidata":"https://www.wikidata.org/wiki/Q7574980","display_name":"Specific detectivity","level":4,"score":0.5617952346801758},{"id":"https://openalex.org/C23125352","wikidata":"https://www.wikidata.org/wiki/Q210765","display_name":"Photodetector","level":2,"score":0.526874840259552},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5209042429924011},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5157275795936584},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.49990200996398926},{"id":"https://openalex.org/C180651308","wikidata":"https://www.wikidata.org/wiki/Q1265973","display_name":"Dark current","level":3,"score":0.43013471364974976},{"id":"https://openalex.org/C186807665","wikidata":"https://www.wikidata.org/wiki/Q2014823","display_name":"Photosensitivity","level":2,"score":0.4295036792755127},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.28550368547439575},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.07720866799354553},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/adom.201901833","doi":"https://doi.org/10.1002/adom.201901833","is_oa":false,"landing_page_url":"https://doi.org/10.1002/adom.201901833","pdf_url":null,"source":{"id":"https://openalex.org/S108229257","display_name":"Advanced Optical Materials","issn_l":"2195-1071","issn":["2195-1071"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Optical Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G291965415","display_name":"\u540c\u4f4d\u7d20\u793a\u8e2a\u6cd5\u7814\u7a76\u6c27\u5316\u7269\u672c\u5f81\u70b9\u7f3a\u9677\u7684\u80fd\u91cf\u5b66","funder_award_id":"11674405","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G3694632899","display_name":null,"funder_award_id":"11675280","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6680984353","display_name":null,"funder_award_id":"61904201","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G761761090","display_name":null,"funder_award_id":"11875088","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8104682567","display_name":null,"funder_award_id":"61874139","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1570254354","https://openalex.org/W1965142452","https://openalex.org/W1966189370","https://openalex.org/W1971687145","https://openalex.org/W1976088289","https://openalex.org/W1979254829","https://openalex.org/W1997180350","https://openalex.org/W2029413399","https://openalex.org/W2041797546","https://openalex.org/W2062855450","https://openalex.org/W2078624450","https://openalex.org/W2131716975","https://openalex.org/W2234581149","https://openalex.org/W2342451745","https://openalex.org/W2405952636","https://openalex.org/W2738672894","https://openalex.org/W2744336678","https://openalex.org/W2749472015","https://openalex.org/W2762143420","https://openalex.org/W2767636837","https://openalex.org/W2771659330","https://openalex.org/W2802347427","https://openalex.org/W2809194330","https://openalex.org/W2886587403","https://openalex.org/W2888875156","https://openalex.org/W2889790114","https://openalex.org/W2905821272","https://openalex.org/W2931928761","https://openalex.org/W2946636684","https://openalex.org/W2952651815","https://openalex.org/W2966250092"],"related_works":["https://openalex.org/W2800921889","https://openalex.org/W3184788723","https://openalex.org/W2803962534","https://openalex.org/W2002444154","https://openalex.org/W2065940891","https://openalex.org/W3006414653","https://openalex.org/W2964555701","https://openalex.org/W4281289578","https://openalex.org/W3046126340","https://openalex.org/W2084177348"],"abstract_inverted_index":{"Abstract":[0],"A":[1,178],"three\u2010terminal":[2],"thin\u2010film":[3],"transistor":[4],"(TFT)":[5],"architecture":[6],"is":[7,66,124,203],"essential":[8],"for":[9],"photodetectors":[10],"to":[11,37,68,130,218],"reach":[12],"a":[13,48,98,128,139,160,170,183,208],"good":[14],"balance":[15],"between":[16],"high":[17,118,140,161,171,184],"responsivity":[18,141,172],"and":[19,60,182,221],"fast":[20],"response":[21],"speed.":[22],"Bottom\u2010gate":[23],"amorphous":[24],"Ga":[25],"2":[26,30,72,78,101,155,198,224],"O":[27,31,73,79,102,156,199,225],"3":[28,32,74,80,103,157,177,200,226],"(a\u2010Ga":[29],")":[33,144],"TFTs":[34],"are":[35],"fabricated":[36],"boost":[38],"their":[39],"UV":[40,151,201],"photodetection":[41],"properties.":[42],"During":[43],"the":[44,53,91,132,148,153,193,215],"device":[45,83],"fabrication":[46],"process,":[47,65],"simple":[49],"chemical\u2010etching":[50],"solution":[51],"with":[52,62,113],"advantages":[54],"of":[55,90,164,173,186],"easy":[56],"operation,":[57],"low":[58],"cost,":[59],"compatibility":[61],"traditional":[63],"lithography":[64],"developed":[67],"selectively":[69],"etch":[70],"a\u2010Ga":[71,77,100,154,197,223],"films.":[75],"The":[76],"channel":[81],"etched":[82],"on":[84,105],"Si":[85],"manifests":[86],"an":[87,108,114],"effective":[88],"suppression":[89],"commonly":[92],"observed":[93],"gate":[94,210],"leakage":[95],"current.":[96],"Meanwhile,":[97],"patterned":[99],"TFT":[104,111],"quartz":[106],"shows":[107],"excellent":[109],"n\u2010type":[110],"performance":[112],"on/off":[115],"ratio":[116,163],"as":[117,119,127,145],"\u224810":[120],"7":[121,168],".":[122],"It":[123],"further":[125],"applied":[126],"phototransistor,":[129],"diminish":[131],"persistent":[133],"photoconductivity":[134],"(PPC)":[135],"effect":[136],"while":[137],"keeping":[138],"(":[142],"R":[143],"well.":[146],"Under":[147],"254":[149],"nm":[150],"illumination,":[152],"phototransistor":[158],"demonstrates":[159],"light\u2010to\u2010dark":[162],"5":[165,219],"\u00d7":[166,175,188],"10":[167,176,189],",":[169,181],"5.67":[174],"W":[179],"\u22121":[180],"detectivity":[185],"1.87":[187],"15":[190],"Jones.":[191],"Remarkably,":[192],"PPC":[194],"phenomenon":[195],"in":[196],"phototransistors":[202],"effectively":[204],"suppressed":[205],"by":[206],"applying":[207],"positive":[209],"pulse,":[211],"which":[212],"greatly":[213],"shortens":[214],"decay":[216],"time":[217],"ms":[220],"offers":[222],"possible":[227],"inroads":[228],"into":[229],"imaging":[230],"applications.":[231]},"counts_by_year":[{"year":2026,"cited_by_count":19},{"year":2025,"cited_by_count":31},{"year":2024,"cited_by_count":31},{"year":2023,"cited_by_count":26},{"year":2022,"cited_by_count":23},{"year":2021,"cited_by_count":13},{"year":2020,"cited_by_count":3}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2025-10-10T00:00:00"}