{"id":"https://openalex.org/W2999507342","doi":"https://doi.org/10.1109/jeds.2020.2966799","title":"Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning","display_name":"Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W2999507342","doi":"https://doi.org/10.1109/jeds.2020.2966799","mag":"2999507342"},"language":"en","primary_location":{"id":"doi:10.1109/jeds.2020.2966799","doi":"https://doi.org/10.1109/jeds.2020.2966799","is_oa":true,"landing_page_url":"https://doi.org/10.1109/jeds.2020.2966799","pdf_url":"https://ieeexplore.ieee.org/ielx7/6245494/8949832/08960312.pdf","source":{"id":"https://openalex.org/S2482167115","display_name":"IEEE Journal of the Electron Devices Society","issn_l":"2168-6734","issn":["2168-6734"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-2","norway-1","oarl","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of the Electron Devices Society","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6245494/8949832/08960312.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5009904028","display_name":"Pei-Yu Jung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Pei-Yu Jung","raw_affiliation_strings":["Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023406757","display_name":"Debashis Panda","orcid":"https://orcid.org/0000-0002-2020-6482","observed_orcids":["https://orcid.org/0000-0002-2020-6482","https://orcid.org/0000-0002-9873-9801"]},"institutions":[{"id":"https://openalex.org/I4210098947","display_name":"National Institute of Science and Technology","ror":"https://ror.org/01150px97","country_code":"IN","type":"education","lineage":["https://openalex.org/I4210098947"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Debashis Panda","raw_affiliation_strings":["Department of Physics, National Institute of Science and Technology, Berhampur, India"],"raw_orcid":"https://orcid.org/0000-0002-2020-6482","affiliations":[{"raw_affiliation_string":"Department of Physics, National Institute of Science and Technology, Berhampur, India","institution_ids":["https://openalex.org/I4210098947"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065127347","display_name":"Sridhar Chandrasekaran","orcid":"https://orcid.org/0000-0003-4168-611X","observed_orcids":["https://orcid.org/0000-0003-4168-611X"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Sridhar Chandrasekaran","raw_affiliation_strings":["Department of EECS, National Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":"https://orcid.org/0000-0003-4168-611X","affiliations":[{"raw_affiliation_string":"Department of EECS, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020663748","display_name":"Sailesh Rajasekaran","orcid":"https://orcid.org/0000-0003-2819-0697","observed_orcids":["https://orcid.org/0000-0003-2819-0697"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Sailesh Rajasekaran","raw_affiliation_strings":["Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081838658","display_name":"Tseung\u2010Yuen Tseng","orcid":"https://orcid.org/0000-0003-1158-5289","observed_orcids":["https://orcid.org/0000-0003-1158-5289"]},"institutions":[{"id":"https://openalex.org/I148366613","display_name":"National Yang Ming Chiao Tung University","ror":"https://ror.org/00se2k293","country_code":"TW","type":"education","lineage":["https://openalex.org/I148366613"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tseung-Yuen Tseng","raw_affiliation_strings":["Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan"],"raw_orcid":"https://orcid.org/0000-0003-1158-5289","affiliations":[{"raw_affiliation_string":"Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan","institution_ids":["https://openalex.org/I148366613"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1350,"currency":"USD","value_usd":1350},"apc_paid":{"value":1350,"currency":"USD","value_usd":1350},"fwci":2.751,"has_fulltext":true,"cited_by_count":56,"citation_normalized_percentile":{"value":0.90794553,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":"8","issue":null,"first_page":"110","last_page":"115"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/neuromorphic-computing","display_name":"neuromorphic computing","score":0.7269999980926514},{"id":"https://openalex.org/keywords/synaptic-learning","display_name":"synaptic learning","score":0.7689999938011169},{"id":"https://openalex.org/keywords/multilevel-memory","display_name":"multilevel memory","score":0.7020000219345093},{"id":"https://openalex.org/keywords/endurance","display_name":"endurance","score":0.6679999828338623},{"id":"https://openalex.org/keywords/synaptic-potentiation-and-depression","display_name":"synaptic potentiation and depression","score":0.7099999785423279}],"concepts":[{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.4150428771972656},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3894794285297394},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.3824508786201477}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/jeds.2020.2966799","doi":"https://doi.org/10.1109/jeds.2020.2966799","is_oa":true,"landing_page_url":"https://doi.org/10.1109/jeds.2020.2966799","pdf_url":"https://ieeexplore.ieee.org/ielx7/6245494/8949832/08960312.pdf","source":{"id":"https://openalex.org/S2482167115","display_name":"IEEE Journal of the Electron Devices Society","issn_l":"2168-6734","issn":["2168-6734"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-2","norway-1","oarl","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of the Electron Devices Society","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:3cc9f5f5fa9e48b497c2632e5a80a0f6","doi":null,"is_oa":true,"landing_page_url":"https://doaj.org/article/3cc9f5f5fa9e48b497c2632e5a80a0f6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Journal of the Electron Devices Society, Vol 8, Pp 110-115 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/jeds.2020.2966799","doi":"https://doi.org/10.1109/jeds.2020.2966799","is_oa":true,"landing_page_url":"https://doi.org/10.1109/jeds.2020.2966799","pdf_url":"https://ieeexplore.ieee.org/ielx7/6245494/8949832/08960312.pdf","source":{"id":"https://openalex.org/S2482167115","display_name":"IEEE Journal of the Electron Devices Society","issn_l":"2168-6734","issn":["2168-6734"],"is_oa":true,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-c","jufo-2","norway-1","oarl","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of the Electron Devices Society","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G4207343805","display_name":null,"funder_award_id":"SRG/2019/000129","funder_id":"https://openalex.org/F4320334771","funder_display_name":"Science and Engineering Research Board"},{"id":"https://openalex.org/G497937365","display_name":null,"funder_award_id":"MOST 107?","funder_id":"https://openalex.org/F4320322795","funder_display_name":"Ministry of Science and Technology, Taiwan"},{"id":"https://openalex.org/G750541327","display_name":"1 Selector/1 Resistor Structured Transparent and Flexible Resistive Randon Access Memory for Neuromorphic Applications","funder_award_id":"MOST107-2221-E009-089-MY3","funder_id":"https://openalex.org/F4320322795","funder_display_name":"Ministry of Science and Technology, Taiwan"}],"funders":[{"id":"https://openalex.org/F4320320719","display_name":"Department of Science and Technology, Ministry of Science and Technology, India","ror":"https://ror.org/0101xrq71"},{"id":"https://openalex.org/F4320322795","display_name":"Ministry of Science and Technology, Taiwan","ror":"https://ror.org/02kv4zf79"},{"id":"https://openalex.org/F4320334771","display_name":"Science and Engineering Research Board","ror":"https://ror.org/03ffdsr55"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2999507342.pdf","grobid_xml":"https://content.openalex.org/works/W2999507342.grobid-xml"},"referenced_works_count":29,"referenced_works":["https://openalex.org/W1542981317","https://openalex.org/W1590586813","https://openalex.org/W1937359183","https://openalex.org/W1962847465","https://openalex.org/W1970897976","https://openalex.org/W1986389668","https://openalex.org/W1987760418","https://openalex.org/W2007300900","https://openalex.org/W2012894748","https://openalex.org/W2021821700","https://openalex.org/W2048014664","https://openalex.org/W2057985983","https://openalex.org/W2117422822","https://openalex.org/W2124938185","https://openalex.org/W2141166488","https://openalex.org/W2147101007","https://openalex.org/W2147667149","https://openalex.org/W2148251150","https://openalex.org/W2163630896","https://openalex.org/W2163761283","https://openalex.org/W2336860599","https://openalex.org/W2499230548","https://openalex.org/W2752813137","https://openalex.org/W2753946111","https://openalex.org/W2766584614","https://openalex.org/W2786299930","https://openalex.org/W2899224990","https://openalex.org/W2916297433","https://openalex.org/W2962921201"],"related_works":["https://openalex.org/W4214925164","https://openalex.org/W2336860599","https://openalex.org/W3137116156","https://openalex.org/W4318426276","https://openalex.org/W2904464143","https://openalex.org/W2883260950","https://openalex.org/W4399054030","https://openalex.org/W7213532576","https://openalex.org/W2743687214","https://openalex.org/W3163008647"],"abstract_inverted_index":{"To":[0],"move":[1],"towards":[2],"a":[3,37,99],"new":[4],"generation":[5],"powerful":[6],"computing":[7,11],"system,":[8],"brain-inspired":[9],"neuromorphic":[10],"is":[12,59,92],"expected":[13],"to":[14,26,40],"transform":[15],"the":[16,19,57,62,81,89,120,153],"architecture":[17],"of":[18,44,56,71,88,125,144],"conventional":[20],"computer,":[21],"where":[22],"memristors":[23,50],"are":[24,78,117,134],"considered":[25],"be":[27,156],"potential":[28],"solutions":[29],"for":[30,80,95,119,129,136],"synapses":[31],"part.":[32],"We":[33],"propose":[34],"and":[35,74,109,127,131],"demonstrate":[36],"novel":[38],"approach":[39],"achieve":[41],"remarkable":[42],"improvement":[43],"analog":[45,68],"switching":[46,69,76],"linearity":[47],"in":[48],"TaN/Ta/TaOx/Al2O3/Pt/Si":[49],"by":[51,148],"varying":[52],"Al2O3layer":[53,58],"thickness.":[54],"Presence":[55],"confirmed":[60],"from":[61],"Auger":[63],"Electron":[64],"Spectroscopy":[65],"study.":[66],"Good":[67],"ratio":[70],"about":[72],"100\u00d7":[73],"superior":[75],"uniformity":[77],"observed":[79],"1":[82,138],"nm":[83,139],"Al2O3based":[84],"device.":[85,122],"Multilevel":[86],"capability":[87],"memristive":[90],"devices":[91],"also":[93],"explored":[94],"prospective":[96],"use":[97],"as":[98,159],"synapse.":[100,162],"More":[101],"than":[102],"104and":[103],"4":[104],"\u00d7":[105],"104cycles":[106],"nondegradable":[107],"dc":[108],"ac":[110],"endurances,":[111],"respectively,":[112],"along":[113],"with":[114],"104second":[115],"retention":[116],"achieved":[118],"optimized":[121],"Improved":[123],"linearities":[124],"2.41":[126],"-2.77":[128],"potentiation":[130],"depression,":[132],"respectively":[133],"obtained":[135],"such":[137],"Al2O3-based":[140],"devices.":[141],"The":[142],"property":[143],"gradual":[145],"resistance":[146],"changed":[147],"pulse":[149],"amplitudes":[150],"confirms":[151],"that":[152],"TaOxmemristors":[154],"can":[155],"potentially":[157],"used":[158],"an":[160],"electronic":[161]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":11},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":9},{"year":2020,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2020-01-23T00:00:00"}