{"id":"https://openalex.org/W2999112170","doi":null,"title":"Wafer Level Embedding Technology for Packaging of Planar GaN Half-Bridge Module in High Power Density Conversion Applications.","display_name":"Wafer Level Embedding Technology for Packaging of Planar GaN Half-Bridge Module in High Power Density Conversion Applications.","publication_year":2018,"publication_date":"2018-06-05","ids":{"openalex":"https://openalex.org/W2999112170","mag":"2999112170"},"language":"en","primary_location":{"id":"pmh:oai:fraunhofer.de:N-510108","doi":null,"is_oa":false,"landing_page_url":"http://publica.fraunhofer.de/documents/N-510108.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer IZM","raw_type":"Conference Paper"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":[],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109800289","display_name":"Charles-Alix Manier","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Charles-Alix Manier","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022461254","display_name":"Kirill Klein","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kirill Klein","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059469670","display_name":"Felix Wuest","orcid":"https://orcid.org/0000-0003-3876-1190","observed_orcids":["https://orcid.org/0000-0003-3876-1190"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Felix Wuest","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0003-3876-1190","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027393888","display_name":"Robert Gernhardt","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Robert Gernhardt","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057811833","display_name":"Philippe Cussac","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Philippe Cussac","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017826774","display_name":"Sophie Andzouana","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sophie Andzouana","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051902263","display_name":"Radoslava Mitova","orcid":"https://orcid.org/0000-0001-7876-4615","observed_orcids":["https://orcid.org/0000-0001-7876-4615"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Radoslava Mitova","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0001-7876-4615","affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001627491","display_name":"Hermann H. Oppermann","orcid":"https://orcid.org/0000-0002-5502-8639","observed_orcids":["https://orcid.org/0000-0002-5502-8639"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Hermann Oppermann","raw_affiliation_strings":[],"raw_orcid":"https://orcid.org/0000-0002-5502-8639","affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5033655697","display_name":"Lang Klaus-Dieter","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Lang Klaus-Dieter","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.40145744,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8784000277519226,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8784000277519226,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.12049999833106995,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-power-devices","display_name":"GaN power devices","score":0.8479999899864197},{"id":"https://openalex.org/keywords/half-bridge-power-module","display_name":"half-bridge module","score":0.8059999942779541},{"id":"https://openalex.org/keywords/thermal-resistance","display_name":"thermal resistance","score":0.777999997138977},{"id":"https://openalex.org/keywords/galvanic-isolation","display_name":"galvanic isolation","score":0.7559999823570251},{"id":"https://openalex.org/keywords/parasitic-effects","display_name":"parasitic effects","score":0.531000018119812}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.697417140007019},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6641287803649902},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.5547145009040833},{"id":"https://openalex.org/C137693562","wikidata":"https://www.wikidata.org/wiki/Q899628","display_name":"Thermal resistance","level":3,"score":0.5464873909950256},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5459751486778259},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.5338341593742371},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5337930917739868},{"id":"https://openalex.org/C193149544","wikidata":"https://www.wikidata.org/wiki/Q7122904","display_name":"Packaging engineering","level":2,"score":0.4393233060836792},{"id":"https://openalex.org/C2780288131","wikidata":"https://www.wikidata.org/wiki/Q4017648","display_name":"Wafer-level packaging","level":3,"score":0.42899784445762634},{"id":"https://openalex.org/C141812795","wikidata":"https://www.wikidata.org/wiki/Q7236534","display_name":"Power module","level":3,"score":0.4200568199157715},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4196268320083618},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3642822802066803},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.32115867733955383},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.277459979057312},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.23269543051719666},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1950289011001587},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14527514576911926},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"pmh:oai:fraunhofer.de:N-510108","doi":null,"is_oa":false,"landing_page_url":"http://publica.fraunhofer.de/documents/N-510108.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer IZM","raw_type":"Conference Paper"},{"id":"pmh:oai:publica.fraunhofer.de:publica/401648","doi":null,"is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/401648","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference paper"},{"id":"mag:2999112170","doi":null,"is_oa":false,"landing_page_url":"http://ieeexplore.ieee.org/document/8402955","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7207000255584717,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"},{"score":0.5690000057220459,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W7043227660","https://openalex.org/W7128834143","https://openalex.org/W7164124466","https://openalex.org/W4310502163","https://openalex.org/W4310450573","https://openalex.org/W1904103275","https://openalex.org/W4285276605","https://openalex.org/W7077070559","https://openalex.org/W3184257229","https://openalex.org/W4296912598"],"abstract_inverted_index":{"For":[0],"the":[1],"development":[2],"of":[3,37,43,91,100],"GaN-based":[4],"power":[5,109],"solutions,":[6],"electronic":[7],"packaging":[8,36],"aspects":[9],"like":[10],"high":[11],"temperature":[12],"capability,":[13],"low":[14,17,83],"parasitics":[15],"and":[16,115],"thermal":[18,97],"resistance":[19,98],"have":[20],"to":[21,76],"be":[22,119],"considered":[23],"for":[24,35],"final":[25],"robust":[26],"systems.":[27],"A":[28,96],"new":[29],"fabrication":[30],"process":[31],"is":[32],"here":[33],"presented":[34,120],"GaN":[38,67],"bare":[39,68],"devices":[40],"in":[41,108,121],"form":[42],"silicon-based":[44],"packages":[45],"using":[46],"wafer":[47,60],"level":[48],"back-end":[49],"processes.":[50],"Compact":[51],"planar":[52],"half-bridge":[53],"modules":[54],"were":[55],"fabricated":[56],"at":[57,94],"200":[58],"mm":[59],"scale":[61],"with":[62,79,87],"650":[63,77],"V":[64,78],"rated":[65],"single":[66],"die.":[69],"The":[70],"package":[71],"demonstrates":[72],"voltage":[73],"breakdown":[74],"up":[75],"leakage":[80],"current":[81],"as":[82,84],"250":[85],"nA":[86,93],"top-bottom":[88],"electrical":[89],"isolation":[90],"1":[92],"2500V.":[95],"RthJC":[99],"around":[101],"0.4":[102],"K/W":[103],"was":[104],"also":[105],"characterized.":[106],"Implementation":[107],"solutions":[110],"has":[111],"been":[112],"first":[113,116],"evaluated":[114],"results":[117],"will":[118],"this":[122],"paper.":[123]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2020-01-23T00:00:00"}