{"id":"https://openalex.org/W2995869944","doi":"https://doi.org/10.1109/ultsym.2019.8925603","title":"FBAR Resonators Fabricated on Insulating Substrates with Improved RF and Nonlinear Performance","display_name":"FBAR Resonators Fabricated on Insulating Substrates with Improved RF and Nonlinear Performance","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W2995869944","doi":"https://doi.org/10.1109/ultsym.2019.8925603","mag":"2995869944"},"language":"en","primary_location":{"id":"doi:10.1109/ultsym.2019.8925603","doi":"https://doi.org/10.1109/ultsym.2019.8925603","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ultsym.2019.8925603","pdf_url":null,"source":{"id":"https://openalex.org/S4393917990","display_name":"IEEE International Ultrasonics Symposium","issn_l":"1948-5719","issn":["1948-5719"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Ultrasonics Symposium (IUS)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084056549","display_name":"Siamak Fouladi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Siamak Fouladi","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103882420","display_name":"Jing Wu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jing Wu","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Qiang Zou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Qiang Zou","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113443414","display_name":"Andrew T. Barfknecht","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andrew Barfknecht","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Alok Vats","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alok Vats","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031751037","display_name":"Mitra Nasresfahani","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mitra Nasresfahani","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Steven Martin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Steven Martin","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025576884","display_name":"David A. Feld","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127325","display_name":"Broadcom (United States)","ror":"https://ror.org/035gt5s03","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127325"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David A. Feld","raw_affiliation_strings":["Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Wireless Semiconductor Division, Broadcom Inc., San Jose, California, USA","institution_ids":["https://openalex.org/I4210127325"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210127325"],"apc_list":null,"apc_paid":null,"fwci":3.5643,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.94400553,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"2019","issue":null,"first_page":"88","last_page":"92"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/thin-film-bulk-acoustic-resonators","display_name":"thin film bulk acoustic resonators","score":0.9539999961853027},{"id":"https://openalex.org/keywords/fbar","display_name":"FBAR","score":0.8410000205039978},{"id":"https://openalex.org/keywords/insulating-substrates","display_name":"insulating substrates","score":0.925000011920929},{"id":"https://openalex.org/keywords/dielectric-substrate","display_name":"dielectric substrate","score":0.9509999752044678},{"id":"https://openalex.org/keywords/rf-performance","display_name":"RF performance","score":0.7919999957084656},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.753000020980835},{"id":"https://openalex.org/keywords/power-dependence","display_name":"power dependence","score":0.6299999952316284}],"concepts":[{"id":"https://openalex.org/C97126364","wikidata":"https://www.wikidata.org/wiki/Q349669","display_name":"Resonator","level":2,"score":0.8640685081481934},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8501394391059875},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.8011134266853333},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6827125549316406},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6366406083106995},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.6112133860588074},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.534468948841095},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.5066729187965393},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.48289060592651367},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.4371921718120575},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3927707374095917},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2972772717475891},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.15418711304664612},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08438664674758911},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/ultsym.2019.8925603","doi":"https://doi.org/10.1109/ultsym.2019.8925603","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ultsym.2019.8925603","pdf_url":null,"source":{"id":"https://openalex.org/S4393917990","display_name":"IEEE International Ultrasonics Symposium","issn_l":"1948-5719","issn":["1948-5719"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":["jufo-1","norway-1"],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Ultrasonics Symposium (IUS)","raw_type":"proceedings-article"},{"id":"mag:3197261513","doi":null,"is_oa":false,"landing_page_url":"https://jglobal.jst.go.jp/en/detail?JGLOBAL_ID=201902220110082893","pdf_url":null,"source":{"id":"https://openalex.org/S4306512817","display_name":"IEEE Conference Proceedings","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"IEEE Conference Proceedings","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W966936304","https://openalex.org/W2032692003","https://openalex.org/W2094831893","https://openalex.org/W2255649762","https://openalex.org/W2534686517","https://openalex.org/W2537171897","https://openalex.org/W2762482212","https://openalex.org/W2793167437","https://openalex.org/W2904622193","https://openalex.org/W2906777580","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2218465830","https://openalex.org/W1980051970","https://openalex.org/W1978131653","https://openalex.org/W2000076101","https://openalex.org/W1491923841","https://openalex.org/W2341738708","https://openalex.org/W2788091507","https://openalex.org/W2165502611","https://openalex.org/W1983170998","https://openalex.org/W2317922930"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"fabrication":[3],"and":[4,17,25,36,39],"characterization":[5],"of":[6],"thin-fllm":[7],"bulk":[8],"acoustic":[9],"resonator":[10],"(FBAR)":[11],"devices":[12,30],"on":[13,51],"insulating":[14],"dielectric":[15],"materials":[16],"substrates":[18],"in":[19],"order":[20],"to":[21,46],"improve":[22],"both":[23],"linear":[24],"nonlinear":[26],"performance.":[27],"The":[28],"fabricated":[29,50],"are":[31],"characterized":[32],"under":[33],"different":[34],"temperatures":[35],"power":[37],"levels":[38],"they":[40],"show":[41],"a":[42,52],"clear":[43],"advantage":[44],"compared":[45],"conventional":[47],"FBAR":[48],"resonators":[49],"silicon":[53],"substrate.":[54]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":3}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2019-12-26T00:00:00"}