{"id":"https://openalex.org/W2990394201","doi":"https://doi.org/10.1109/icreed.2018.8905072","title":"Displacement damage effects and anneal characteristic on InP/InGaAs DHBTs","display_name":"Displacement damage effects and anneal characteristic on InP/InGaAs DHBTs","publication_year":2018,"publication_date":"2018-05-01","ids":{"openalex":"https://openalex.org/W2990394201","doi":"https://doi.org/10.1109/icreed.2018.8905072","mag":"2990394201"},"language":"en","primary_location":{"id":"doi:10.1109/icreed.2018.8905072","doi":"https://doi.org/10.1109/icreed.2018.8905072","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icreed.2018.8905072","pdf_url":null,"source":{"id":"https://openalex.org/S7407087135","display_name":"International Conference on Radiation Effects of Electronic Devices (ICREED)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010481801","display_name":"Xingyao Zhang","orcid":"https://orcid.org/0009-0000-8993-056X","observed_orcids":["https://orcid.org/0009-0000-8993-056X","https://orcid.org/0000-0002-8874-9520"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210106108","display_name":"Xinjiang Technical Institute of Physics & Chemistry","ror":"https://ror.org/00x44h034","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xingyao Zhang","raw_affiliation_strings":["Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]},{"raw_affiliation_string":"Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055838202","display_name":"Yudong Li","orcid":"https://orcid.org/0000-0001-8496-5851","observed_orcids":["https://orcid.org/0000-0001-8496-5851","https://orcid.org/0000-0003-4791-1752"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210106108","display_name":"Xinjiang Technical Institute of Physics & Chemistry","ror":"https://ror.org/00x44h034","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yudong Li","raw_affiliation_strings":["Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]},{"raw_affiliation_string":"Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109333115","display_name":"Qi Guo","orcid":"https://orcid.org/0000-0003-4188-6883","observed_orcids":["https://orcid.org/0000-0003-4188-6883"]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210106108","display_name":"Xinjiang Technical Institute of Physics & Chemistry","ror":"https://ror.org/00x44h034","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi Guo","raw_affiliation_strings":["Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]},{"raw_affiliation_string":"Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Bin Liao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2800372957","display_name":"China Electronics Technology Group Corporation","ror":"https://ror.org/0098hst83","country_code":"CN","type":"company","lineage":["https://openalex.org/I2800372957"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bin Liao","raw_affiliation_strings":["The 13 th Research Institute,CETC,Shijiazhuang,China,050051","CETC, The 13 th Research Institute, Shijiazhuang, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The 13 th Research Institute,CETC,Shijiazhuang,China,050051","institution_ids":["https://openalex.org/I2800372957"]},{"raw_affiliation_string":"CETC, The 13 th Research Institute, Shijiazhuang, China","institution_ids":["https://openalex.org/I2800372957"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046710654","display_name":"Yang Shi","orcid":"https://orcid.org/0000-0001-5862-1406","observed_orcids":["https://orcid.org/0000-0001-5862-1406"]},"institutions":[{"id":"https://openalex.org/I2800372957","display_name":"China Electronics Technology Group Corporation","ror":"https://ror.org/0098hst83","country_code":"CN","type":"company","lineage":["https://openalex.org/I2800372957"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shi Yang","raw_affiliation_strings":["The 13 th Research Institute,CETC,Shijiazhuang,China,050051","CETC, The 13 th Research Institute, Shijiazhuang, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The 13 th Research Institute,CETC,Shijiazhuang,China,050051","institution_ids":["https://openalex.org/I2800372957"]},{"raw_affiliation_string":"CETC, The 13 th Research Institute, Shijiazhuang, China","institution_ids":["https://openalex.org/I2800372957"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Zhongyue Yang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2800372957","display_name":"China Electronics Technology Group Corporation","ror":"https://ror.org/0098hst83","country_code":"CN","type":"company","lineage":["https://openalex.org/I2800372957"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhongyue Yang","raw_affiliation_strings":["The 13 th Research Institute,CETC,Shijiazhuang,China,050051","CETC, The 13 th Research Institute, Shijiazhuang, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The 13 th Research Institute,CETC,Shijiazhuang,China,050051","institution_ids":["https://openalex.org/I2800372957"]},{"raw_affiliation_string":"CETC, The 13 th Research Institute, Shijiazhuang, China","institution_ids":["https://openalex.org/I2800372957"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083528588","display_name":"Chengfa He","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210106108","display_name":"Xinjiang Technical Institute of Physics & Chemistry","ror":"https://ror.org/00x44h034","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chengfa He","raw_affiliation_strings":["Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chinese Academy of Sciences,Xinjiang Technical Institute of Physics and Chemistry,China,830011","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]},{"raw_affiliation_string":"Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210106108"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3988,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59695777,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9883000254631042,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11044","display_name":"Particle Detector Development and Performance","score":0.002199999988079071,"subfield":{"id":"https://openalex.org/subfields/3106","display_name":"Nuclear and High Energy Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.000699999975040555,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/displacement-damage","display_name":"displacement damage","score":0.8510000109672546},{"id":"https://openalex.org/keywords/proton-irradiation","display_name":"proton irradiation","score":0.828000009059906},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.6579999923706055},{"id":"https://openalex.org/keywords/radiation-hardness","display_name":"radioresistance","score":0.4959999918937683},{"id":"https://openalex.org/keywords/base-emitter-junction","display_name":"emitter-base junction","score":0.7649999856948853},{"id":"https://openalex.org/keywords/base-collector-junction","display_name":"base-collector junction","score":0.9819999933242798},{"id":"https://openalex.org/keywords/space-charge-region","display_name":"depletion region","score":0.8809999823570251},{"id":"https://openalex.org/keywords/frequency-characteristics","display_name":"frequency characteristics","score":0.4189999997615814},{"id":"https://openalex.org/keywords/dc-characteristics","display_name":"DC characteristics","score":0.7850000262260437}],"concepts":[{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.7100743651390076},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6757020950317383},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.660999059677124},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.6073329448699951},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5962240099906921},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.5381345152854919},{"id":"https://openalex.org/C54516573","wikidata":"https://www.wikidata.org/wiki/Q2294","display_name":"Proton","level":2,"score":0.5331916809082031},{"id":"https://openalex.org/C153428861","wikidata":"https://www.wikidata.org/wiki/Q152749","display_name":"Radiation damage","level":3,"score":0.5218449831008911},{"id":"https://openalex.org/C2779769603","wikidata":"https://www.wikidata.org/wiki/Q2618059","display_name":"Indium gallium arsenide","level":3,"score":0.4676283001899719},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.4657277464866638},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.46089664101600647},{"id":"https://openalex.org/C2777924906","wikidata":"https://www.wikidata.org/wiki/Q34168","display_name":"Trapping","level":2,"score":0.4386933743953705},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.4177650213241577},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2412726879119873},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19500821828842163},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19283294677734375},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.19207614660263062},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11940550804138184},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C18903297","wikidata":"https://www.wikidata.org/wiki/Q7150","display_name":"Ecology","level":1,"score":0.0},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/icreed.2018.8905072","doi":"https://doi.org/10.1109/icreed.2018.8905072","is_oa":false,"landing_page_url":"https://doi.org/10.1109/icreed.2018.8905072","pdf_url":null,"source":{"id":"https://openalex.org/S7407087135","display_name":"International Conference on Radiation Effects of Electronic Devices (ICREED)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 International Conference on Radiation Effects of Electronic Devices (ICREED)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W243676328","https://openalex.org/W1495273303","https://openalex.org/W1599494869","https://openalex.org/W1653682850","https://openalex.org/W1968106758","https://openalex.org/W1979554857","https://openalex.org/W2006549104","https://openalex.org/W2016447913","https://openalex.org/W2062461658","https://openalex.org/W2078087164","https://openalex.org/W2094734274","https://openalex.org/W2099918229","https://openalex.org/W2103564099","https://openalex.org/W2114149747","https://openalex.org/W2124318807","https://openalex.org/W2148511265","https://openalex.org/W2164289938","https://openalex.org/W2552062303","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2006549104","https://openalex.org/W2790948276","https://openalex.org/W4412972542","https://openalex.org/W4389209290","https://openalex.org/W2119584946","https://openalex.org/W4396778736","https://openalex.org/W4247096053","https://openalex.org/W1968227118","https://openalex.org/W2914742608","https://openalex.org/W1495273303"],"abstract_inverted_index":{"Our":[0],"tests":[1],"on":[2,56],"InP/InGaAs":[3,29],"double":[4],"heterojunction":[5],"bipolar":[6],"transistors":[7],"(DHBTs)":[8],"aimed":[9],"to":[10,72],"establish":[11],"the":[12,49,53,57,67,73,80,84,103],"electrical":[13],"properties":[14],"at":[15,110],"120":[16],"keV,":[17],"3MeV":[18],"and":[19,25,38,90],"10MeV":[20],"proton":[21,51],"irradiation.":[22],"The":[23,43],"DC":[24],"frequency":[26],"characteristics":[27,96],"of":[28,45,69,88,95,97],"DHBTs":[30,58,70,98],"are":[31,41,99],"tested":[32],"after":[33],"radiation.":[34],"Displacement":[35],"damage":[36],"effect":[37],"anneal":[39,108],"characteristic":[40],"analyzed.":[42],"change":[44],"currents":[46],"reflects":[47],"that":[48,66],"keV-level":[50],"have":[52],"greater":[54],"influence":[55],"than":[59],"MeV-level":[60],"proton.":[61],"It":[62],"is":[63],"indicated":[64],"clearly":[65],"degradation":[68],"due":[71],"radiation-induced":[74,104],"trapping":[75,105],"centers,":[76],"where":[77],"located":[78],"in":[79],"neutral":[81],"base":[82],"region,":[83],"space":[85],"charge":[86],"region":[87],"base-emitter":[89],"base-collector":[91],"junctions":[92],"mainly.":[93],"Most":[94],"recovered":[100],"because":[101],"some":[102],"centers":[106],"occur":[107],"out":[109],"relatively":[111],"high":[112],"temperatures.":[113]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2019-12-05T00:00:00"}