{"id":"https://openalex.org/W2982561479","doi":"https://doi.org/10.1149/2.0081911jss","title":"Aging Effects of KOH+NH2OH Solution on the Etching Characteristics of Silicon","display_name":"Aging Effects of KOH+NH2OH Solution on the Etching Characteristics of Silicon","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2982561479","doi":"https://doi.org/10.1149/2.0081911jss","mag":"2982561479"},"language":"en","primary_location":{"id":"doi:10.1149/2.0081911jss","doi":"https://doi.org/10.1149/2.0081911jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0081911jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0081911jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/2.0081911jss/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108661725","display_name":"Avvaru Venkata Narasimha Rao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I65181880","display_name":"Indian Institute of Technology Hyderabad","ror":"https://ror.org/01j4v3x97","country_code":"IN","type":"education","lineage":["https://openalex.org/I65181880"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Avvaru Venkata Narasimha Rao","raw_affiliation_strings":["MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, India","institution_ids":["https://openalex.org/I65181880"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025481205","display_name":"Prem Pal","orcid":"https://orcid.org/0000-0001-7345-9769","observed_orcids":["https://orcid.org/0000-0001-7345-9769"]},"institutions":[{"id":"https://openalex.org/I65181880","display_name":"Indian Institute of Technology Hyderabad","ror":"https://ror.org/01j4v3x97","country_code":"IN","type":"education","lineage":["https://openalex.org/I65181880"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Prem Pal","raw_affiliation_strings":["MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, India"],"raw_orcid":"https://orcid.org/0000-0001-7345-9769","affiliations":[{"raw_affiliation_string":"MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, India","institution_ids":["https://openalex.org/I65181880"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072777429","display_name":"Ashok Kumar Pandey","orcid":"https://orcid.org/0000-0002-5878-6451","observed_orcids":["https://orcid.org/0000-0002-5878-6451"]},"institutions":[{"id":"https://openalex.org/I65181880","display_name":"Indian Institute of Technology Hyderabad","ror":"https://ror.org/01j4v3x97","country_code":"IN","type":"education","lineage":["https://openalex.org/I65181880"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ashok Kumar Pandey","raw_affiliation_strings":["Department of Mechanical and Aerospace Engineering Indian Institute of Technology Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Mechanical and Aerospace Engineering Indian Institute of Technology Hyderabad, India","institution_ids":["https://openalex.org/I65181880"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040431970","display_name":"Veerla Swarnalatha","orcid":"https://orcid.org/0009-0008-4621-0034","observed_orcids":["https://orcid.org/0009-0008-4621-0034"]},"institutions":[{"id":"https://openalex.org/I65181880","display_name":"Indian Institute of Technology Hyderabad","ror":"https://ror.org/01j4v3x97","country_code":"IN","type":"education","lineage":["https://openalex.org/I65181880"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Veerla Swarnalatha","raw_affiliation_strings":["MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MEMS and Micro/Nano Systems Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, India","institution_ids":["https://openalex.org/I65181880"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086787525","display_name":"P. Krishna Menon","orcid":"https://orcid.org/0000-0003-4573-5396","observed_orcids":["https://orcid.org/0000-0003-4573-5396"]},"institutions":[{"id":"https://openalex.org/I4210138561","display_name":"Research Centre Imarat","ror":"https://ror.org/03mw5zj47","country_code":"IN","type":"facility","lineage":["https://openalex.org/I1340206300","https://openalex.org/I2799351866","https://openalex.org/I4210138561","https://openalex.org/I4210150591"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"P. Krishna Menon","raw_affiliation_strings":["Research Center Imarat (RCI), Hyderabad, Telangana 500069 India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Center Imarat (RCI), Hyderabad, Telangana 500069 India","institution_ids":["https://openalex.org/I4210138561"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103020661","display_name":"Hiroshi Tanaka","orcid":"https://orcid.org/0000-0001-6874-4776","observed_orcids":["https://orcid.org/0000-0001-6874-4776"]},"institutions":[{"id":"https://openalex.org/I190508380","display_name":"Aichi Institute of Technology","ror":"https://ror.org/02qsepw74","country_code":"JP","type":"education","lineage":["https://openalex.org/I190508380"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Tanaka","raw_affiliation_strings":["Department of Mechanical Engineering, Aichi Institute of Technology, Aichi, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Mechanical Engineering, Aichi Institute of Technology, Aichi, Japan","institution_ids":["https://openalex.org/I190508380"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5105356564","display_name":"Kazuo Sato","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I190508380","display_name":"Aichi Institute of Technology","ror":"https://ror.org/02qsepw74","country_code":"JP","type":"education","lineage":["https://openalex.org/I190508380"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuo Sato","raw_affiliation_strings":["Department of Mechanical Engineering, Aichi Institute of Technology, Aichi, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Mechanical Engineering, Aichi Institute of Technology, Aichi, Japan","institution_ids":["https://openalex.org/I190508380"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":0.7227,"has_fulltext":true,"cited_by_count":11,"citation_normalized_percentile":{"value":0.66182026,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":98},"biblio":{"volume":"8","issue":"11","first_page":"P685","last_page":"P692"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9140999913215637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9140999913215637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10732","display_name":"Laser Material Processing Techniques","score":0.009600000455975533,"subfield":{"id":"https://openalex.org/subfields/2209","display_name":"Industrial and Manufacturing Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.009399999864399433,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hydroxylamine","display_name":"hydroxylamine","score":0.8379999995231628},{"id":"https://openalex.org/keywords/potassium-hydroxide","display_name":"potassium hydroxide","score":0.9359999895095825},{"id":"https://openalex.org/keywords/anisotropic-wet-etching","display_name":"anisotropic wet etching","score":0.800000011920929},{"id":"https://openalex.org/keywords/silicon-etching","display_name":"silicon etching","score":0.8659999966621399},{"id":"https://openalex.org/keywords/undercutting","display_name":"undercutting","score":0.8429999947547913},{"id":"https://openalex.org/keywords/convex-corners","display_name":"convex corners","score":0.6439999938011169},{"id":"https://openalex.org/keywords/etch-rate","display_name":"etch rate","score":0.8569999933242798},{"id":"https://openalex.org/keywords/si-100","display_name":"Si(100)","score":0.8399999737739563},{"id":"https://openalex.org/keywords/si-110","display_name":"Si(110)","score":0.9929999709129333},{"id":"https://openalex.org/keywords/silicon-micromachining","display_name":"silicon micromachining","score":0.8579999804496765},{"id":"https://openalex.org/keywords/surface-morphology","display_name":"surface morphology","score":0.6970000267028809}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.8229689598083496},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7917347550392151},{"id":"https://openalex.org/C2780127704","wikidata":"https://www.wikidata.org/wiki/Q420868","display_name":"Tetramethylammonium hydroxide","level":2,"score":0.7829370498657227},{"id":"https://openalex.org/C2779439175","wikidata":"https://www.wikidata.org/wiki/Q132298","display_name":"Potassium hydroxide","level":2,"score":0.7355995178222656},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.709747314453125},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.6264962553977966},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.48879310488700867},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.4720723628997803},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.47136440873146057},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.4513024091720581},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.43813619017601013},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3332088589668274},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28132253885269165},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1149/2.0081911jss","doi":"https://doi.org/10.1149/2.0081911jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0081911jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0081911jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},{"id":"pmh:oai:raiith.iith.ac.in:7059","doi":null,"is_oa":false,"landing_page_url":"http://raiith.iith.ac.in/7059/","pdf_url":null,"source":{"id":"https://openalex.org/S4306400292","display_name":"Research Archive of Indian Institute of Technology Hyderabad (Indian Institute of Technology Hyderabad)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I65181880","host_organization_name":"Indian Institute of Technology Hyderabad","host_organization_lineage":["https://openalex.org/I65181880"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":{"id":"doi:10.1149/2.0081911jss","doi":"https://doi.org/10.1149/2.0081911jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0081911jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0081911jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322716","display_name":"Japan International Cooperation Agency","ror":"https://ror.org/022es3t03"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2982561479.pdf","grobid_xml":"https://content.openalex.org/works/W2982561479.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1639777823","https://openalex.org/W1670172520","https://openalex.org/W1899710732","https://openalex.org/W1942645863","https://openalex.org/W1966741467","https://openalex.org/W1973463983","https://openalex.org/W1977672199","https://openalex.org/W1984469519","https://openalex.org/W2012249284","https://openalex.org/W2017731765","https://openalex.org/W2020945626","https://openalex.org/W2021059758","https://openalex.org/W2032759614","https://openalex.org/W2042915059","https://openalex.org/W2046824894","https://openalex.org/W2054713283","https://openalex.org/W2056030209","https://openalex.org/W2068482178","https://openalex.org/W2078297634","https://openalex.org/W2084636723","https://openalex.org/W2090537646","https://openalex.org/W2092568788","https://openalex.org/W2125116839","https://openalex.org/W2139858070","https://openalex.org/W2153261772","https://openalex.org/W2617076870","https://openalex.org/W2729258792","https://openalex.org/W2748971836","https://openalex.org/W4250684491","https://openalex.org/W4285719527"],"related_works":["https://openalex.org/W2748971836","https://openalex.org/W2944479147","https://openalex.org/W4399161649","https://openalex.org/W4309554410","https://openalex.org/W2093605517","https://openalex.org/W2997465396","https://openalex.org/W4289170331","https://openalex.org/W2617076870","https://openalex.org/W4411298397","https://openalex.org/W2800387842"],"abstract_inverted_index":{"Recently":[0],"the":[1,9,72,79,91,108,128,150,164,179,182,190],"effect":[2,92],"of":[3,12,51,74,82,93,95,110,112,131,147,167,181],"hydroxylamine":[4],"(NH":[5],"2":[6,45,63,76,97,115],"OH)":[7],"on":[8,101,127],"etching":[10,28,80,103,129,161,198],"characteristics":[11,130],"alkaline":[13,83,99],"solution":[14,41,84,100],"(e.g.":[15],"potassium":[16],"hydroxide":[17,21],"(KOH)":[18],"and":[19,34,59,133,149,170,192],"tetramethylammonium":[20],"(TMAH))":[22],"is":[23,87,121,135,186,199],"studied":[24,136],"to":[25,89,123],"obtain":[26],"improved":[27,48],"characteristics,":[29],"especially":[30],"high":[31,54,66],"etch":[32,49,55,145,165],"rate":[33,50,146,166],"enhanced":[35],"undercutting":[36,67,151],"at":[37,68,152,160],"convex":[38,69,153],"corners.":[39],"Alkaline":[40],"modified":[42],"with":[43,157,178],"NH":[44,75,96,114],"OH":[46,77],"provides":[47],"silicon":[52,58,60,148,168,195,202],"(Si),":[53],"selectivity":[56],"between":[57],"dioxide":[61,169],"(SiO":[62],"),":[64],"considerably":[65,176],"corner.":[70],"As":[71],"addition":[73],"alters":[78],"properties":[81],"dramatically,":[85],"it":[86],"indispensable":[88],"investigate":[90],"aging":[94,111,159],"OH-added":[98,116],"its":[102],"characteristics.":[104],"In":[105],"this":[106],"work,":[107],"influence":[109],"15%":[113],"20":[117],"wt%":[118],"KOH,":[119],"which":[120],"referred":[122],"as":[124],"an":[125],"etchant,":[126],"Si{100}":[132],"Si{110}":[134],"in":[137],"detail.":[138],"The":[139,144],"results":[140],"are":[141,174],"systematically":[142],"presented.":[143],"corners":[154],"decrease":[155],"significantly":[156,187],"etchant":[158],"temperature,":[162],"while":[163],"etched":[171],"surface":[172],"morphology":[173],"not":[175],"affected":[177],"age":[180],"etchant.":[183],"This":[184],"study":[185],"important":[188],"for":[189,201],"researchers":[191],"industries":[193],"where":[194],"wet":[196],"anisotropic":[197],"used":[200],"micromachining.":[203]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2019-11-08T00:00:00"}