{"id":"https://openalex.org/W2980200403","doi":"https://doi.org/10.1088/1361-6463/ab4c6f","title":"Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes","display_name":"Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes","publication_year":2019,"publication_date":"2019-10-09","ids":{"openalex":"https://openalex.org/W2980200403","doi":"https://doi.org/10.1088/1361-6463/ab4c6f","mag":"2980200403"},"language":"en","primary_location":{"id":"doi:10.1088/1361-6463/ab4c6f","doi":"https://doi.org/10.1088/1361-6463/ab4c6f","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1361-6463/ab4c6f","pdf_url":"https://iopscience.iop.org/article/10.1088/1361-6463/ab4c6f/pdf","source":{"id":"https://openalex.org/S111927887","display_name":"Journal of Physics D Applied Physics","issn_l":"0022-3727","issn":["0022-3727","1361-6463"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics D: Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1088/1361-6463/ab4c6f/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021689652","display_name":"Zhaoke Bian","orcid":"https://orcid.org/0000-0002-8613-5509","observed_orcids":["https://orcid.org/0000-0002-8613-5509"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhaoke Bian","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":"https://orcid.org/0000-0002-8613-5509","affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066015500","display_name":"Kai Su","orcid":"https://orcid.org/0000-0003-1276-5409","observed_orcids":["https://orcid.org/0000-0003-1276-5409"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Su","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100638045","display_name":"Jincheng Zhang","orcid":"https://orcid.org/0000-0001-7332-6704","observed_orcids":["https://orcid.org/0000-0001-7332-6704","https://orcid.org/0009-0005-1860-0009"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jincheng Zhang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090882194","display_name":"Shenglei Zhao","orcid":"https://orcid.org/0000-0002-1406-1088","observed_orcids":["https://orcid.org/0000-0002-1406-1088"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shenglei Zhao","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077506146","display_name":"Hong Yu Zhou","orcid":"https://orcid.org/0000-0002-0741-7568","observed_orcids":["https://orcid.org/0000-0002-0741-7568"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hong Zhou","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100743162","display_name":"Weihang Zhang","orcid":"https://orcid.org/0000-0003-0400-1871","observed_orcids":["https://orcid.org/0000-0003-0400-1871"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weihang Zhang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100667180","display_name":"Yachao Zhang","orcid":"https://orcid.org/0000-0003-1864-6953","observed_orcids":["https://orcid.org/0000-0003-1864-6953","https://orcid.org/0000-0002-1238-5716"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yachao Zhang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":"https://orcid.org/0000-0003-1864-6953","affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100375781","display_name":"Tao Zhang","orcid":"https://orcid.org/0000-0002-1711-2143","observed_orcids":["https://orcid.org/0000-0002-1711-2143"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tao Zhang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053172818","display_name":"Jiabo Chen","orcid":"https://orcid.org/0000-0002-7462-2449","observed_orcids":["https://orcid.org/0000-0002-7462-2449"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiabo Chen","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":"https://orcid.org/0000-0002-7462-2449","affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029721135","display_name":"Kui Dang","orcid":"https://orcid.org/0000-0002-9484-2035","observed_orcids":["https://orcid.org/0000-0002-9484-2035"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kui Dang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000888205","display_name":"Jing Ning","orcid":"https://orcid.org/0000-0002-3766-1158","observed_orcids":["https://orcid.org/0000-0002-3766-1158"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jing Ning","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100427150","display_name":"Yue Hao","orcid":"https://orcid.org/0000-0001-7876-8878","observed_orcids":["https://orcid.org/0000-0001-7876-8878","https://orcid.org/0000-0002-8081-2919"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Hao","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi\u2019an 710071, People\u2019s Republic of China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":{"value":2700,"currency":"USD","value_usd":2700},"apc_paid":null,"fwci":0.6702,"has_fulltext":true,"cited_by_count":11,"citation_normalized_percentile":{"value":0.65050879,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"53","issue":"4","first_page":"045103","last_page":"045103"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.57669997215271,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.57669997215271,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.17069999873638153,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.16609999537467957,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gamma-irradiation","display_name":"gamma irradiation","score":0.9150000214576721},{"id":"https://openalex.org/keywords/gan","display_name":"GaN","score":0.7630000114440918},{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.9139999747276306},{"id":"https://openalex.org/keywords/radiation-damage","display_name":"radiation damage","score":0.5920000076293945},{"id":"https://openalex.org/keywords/ideality-factor","display_name":"ideality factor","score":0.8989999890327454},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.9300000071525574},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.8849999904632568},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.8410000205039978},{"id":"https://openalex.org/keywords/deep-electron-traps","display_name":"deep electron traps","score":0.8339999914169312},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.7670000195503235},{"id":"https://openalex.org/keywords/trap-time-constants","display_name":"trap time constants","score":0.8169999718666077}],"concepts":[{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.7572148442268372},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7122708559036255},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.6850742101669312},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6793199777603149},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5791705250740051},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5112953186035156},{"id":"https://openalex.org/C5667319","wikidata":"https://www.wikidata.org/wiki/Q1924839","display_name":"Metal\u2013semiconductor junction","level":4,"score":0.4235777258872986},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.41581594944000244},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1261388063430786},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.06046640872955322}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1088/1361-6463/ab4c6f","doi":"https://doi.org/10.1088/1361-6463/ab4c6f","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1361-6463/ab4c6f","pdf_url":"https://iopscience.iop.org/article/10.1088/1361-6463/ab4c6f/pdf","source":{"id":"https://openalex.org/S111927887","display_name":"Journal of Physics D Applied Physics","issn_l":"0022-3727","issn":["0022-3727","1361-6463"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics D: Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1088/1361-6463/ab4c6f","doi":"https://doi.org/10.1088/1361-6463/ab4c6f","is_oa":true,"landing_page_url":"https://doi.org/10.1088/1361-6463/ab4c6f","pdf_url":"https://iopscience.iop.org/article/10.1088/1361-6463/ab4c6f/pdf","source":{"id":"https://openalex.org/S111927887","display_name":"Journal of Physics D Applied Physics","issn_l":"0022-3727","issn":["0022-3727","1361-6463"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Physics D: Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G2489245008","display_name":null,"funder_award_id":"2016YFB0400100","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G6089716073","display_name":null,"funder_award_id":"JB181108","funder_id":"https://openalex.org/F4320335787","funder_display_name":"Fundamental Research Funds for the Central Universities"}],"funders":[{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null},{"id":"https://openalex.org/F4320335787","display_name":"Fundamental Research Funds for the Central Universities","ror":null},{"id":"https://openalex.org/F4320336567","display_name":"Natural Science Basic Research Program of Shaanxi Province","ror":null}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2980200403.pdf","grobid_xml":"https://content.openalex.org/works/W2980200403.grobid-xml"},"referenced_works_count":38,"referenced_works":["https://openalex.org/W1499083057","https://openalex.org/W1605038571","https://openalex.org/W1875959771","https://openalex.org/W1944104594","https://openalex.org/W1964948203","https://openalex.org/W1971261619","https://openalex.org/W1978701394","https://openalex.org/W1988665943","https://openalex.org/W1989812112","https://openalex.org/W1989817402","https://openalex.org/W2003300741","https://openalex.org/W2016958551","https://openalex.org/W2019849054","https://openalex.org/W2020037569","https://openalex.org/W2023920635","https://openalex.org/W2026379861","https://openalex.org/W2046864385","https://openalex.org/W2081030839","https://openalex.org/W2083785268","https://openalex.org/W2092332957","https://openalex.org/W2280465626","https://openalex.org/W2322436674","https://openalex.org/W2490765418","https://openalex.org/W2569848925","https://openalex.org/W2588456444","https://openalex.org/W2598872346","https://openalex.org/W2599162566","https://openalex.org/W2608960414","https://openalex.org/W2751953655","https://openalex.org/W2759801408","https://openalex.org/W2772177073","https://openalex.org/W2789794433","https://openalex.org/W2789838394","https://openalex.org/W2796755023","https://openalex.org/W2805576206","https://openalex.org/W2805620933","https://openalex.org/W2913537790","https://openalex.org/W2941312929"],"related_works":["https://openalex.org/W4308919381","https://openalex.org/W4388866060","https://openalex.org/W4364380742","https://openalex.org/W4415707800","https://openalex.org/W3096863418","https://openalex.org/W7117113904","https://openalex.org/W3109089037","https://openalex.org/W3142002266","https://openalex.org/W1978598079","https://openalex.org/W4405600407"],"abstract_inverted_index":{"Abstract":[0],"The":[1,49,80,142],"impact":[2],"of":[3,51,72,89,101,158,173],"gamma":[4,109,140],"irradiation":[5],"on":[6,112],"GaN":[7,23,47,136],"quasi-vertical":[8],"Schottky":[9,90,96],"barrier":[10,91,102],"diodes":[11],"(SBDs)":[12],"has":[13,85],"been":[14],"investigated":[15],"for":[16,44],"the":[17,25,34,45,69,77,87,94,99,121,126,129,134,150,155,162,171],"first":[18],"time.":[19],"Compared":[20],"with":[21,76],"original":[22,78],"SBDs,":[24],"ideality":[26],"factor":[27],"decreases":[28],"from":[29,38,54],"1.2":[30],"to":[31,41,60,168,177],"1.01\u20131.02":[32],"and":[33,98,117,128,161],"on/off":[35],"ratio":[36],"increases":[37],"10":[39,42],"9":[40],"12":[43],"irradiated":[46],"SBDs.":[48,79],"reduction":[50],"dynamic":[52],"on-resistance":[53],"0.67":[55],"m\u03a9":[56,62],"\u00b7":[57,63],"cm":[58,64],"2":[59,65],"0.54":[61],"was":[66],"observed":[67],"at":[68,93,125],"quiescent":[70],"bias":[71],"\u2212100":[73],"V":[74],"compared":[75],"temperature":[81],"dependent":[82,144],"current":[83],"characteristics":[84,157],"revealed":[86],"existence":[88],"inhomogeneities":[92,103],"anode/GaN":[95],"interface,":[97],"level":[100],"can":[104],"be":[105,169],"effectively":[106],"suppressed":[107],"after":[108,139],"irradiation.":[110,141],"Based":[111],"x-ray":[113,118],"photoelectron":[114],"spectroscopy,":[115],"cathodoluminescence":[116],"diffraction":[119],"results,":[120],"interface":[122,127,151],"state":[123],"density":[124],"deep":[130],"electron":[131],"trap":[132,152,163],"in":[133,170],"bulk":[135],"are":[137],"reduced":[138],"voltage":[143],"capacitance-frequency":[145],"measurements":[146],"further":[147],"confirm":[148],"that":[149],"states":[153],"dominate":[154],"degraded":[156],"pre-irradiated":[159],"devices":[160],"time":[164],"constant":[165],"is":[166],"estimated":[167],"range":[172],"5":[174],"\u03bc":[175,179],"s":[176],"50":[178],"s.":[180]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2019-10-18T00:00:00"}