{"id":"https://openalex.org/W2963972476","doi":"https://doi.org/10.1002/aelm.201900333","title":"Programmable Multilevel Memtransistors Based on van der Waals Heterostructures","display_name":"Programmable Multilevel Memtransistors Based on van der Waals Heterostructures","publication_year":2019,"publication_date":"2019-07-24","ids":{"openalex":"https://openalex.org/W2963972476","doi":"https://doi.org/10.1002/aelm.201900333","mag":"2963972476"},"language":"en","primary_location":{"id":"doi:10.1002/aelm.201900333","doi":"https://doi.org/10.1002/aelm.201900333","is_oa":false,"landing_page_url":"https://doi.org/10.1002/aelm.201900333","pdf_url":null,"source":{"id":"https://openalex.org/S2765003236","display_name":"Advanced Electronic Materials","issn_l":"2199-160X","issn":["2199-160X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-2","norway-1","oarl","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Electronic Materials","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043157906","display_name":"Hyunik Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunik Park","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 South Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059022137","display_name":"Michael A. Mastro","orcid":"https://orcid.org/0000-0002-6372-5506","observed_orcids":["https://orcid.org/0000-0002-6372-5506"]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael A. Mastro","raw_affiliation_strings":["US Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375 USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"US Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375 USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018190506","display_name":"Marko Jak Tadjer","orcid":"https://orcid.org/0000-0002-2388-2937","observed_orcids":["https://orcid.org/0000-0002-2388-2937"]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marko J. Tadjer","raw_affiliation_strings":["US Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375 USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"US Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC, 20375 USA","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100462779","display_name":"Jihyun Kim","orcid":"https://orcid.org/0000-0002-5634-8394","observed_orcids":["https://orcid.org/0000-0002-5634-8394","https://orcid.org/0000-0002-5119-6627"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jihyun Kim","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 South Korea"],"raw_orcid":"https://orcid.org/0000-0002-5634-8394","affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Seoul, 02841 South Korea","institution_ids":["https://openalex.org/I197347611"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5100462779"],"corresponding_institution_ids":["https://openalex.org/I197347611"],"apc_list":{"value":3800,"currency":"USD","value_usd":3800},"apc_paid":null,"fwci":1.5351,"has_fulltext":false,"cited_by_count":31,"citation_normalized_percentile":{"value":0.81965565,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":"5","issue":"10","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memtransistors","display_name":"memtransistors","score":0.949999988079071},{"id":"https://openalex.org/keywords/memristors","display_name":"memristors","score":0.8809999823570251},{"id":"https://openalex.org/keywords/van-der-waals-heterostructures","display_name":"van der Waals heterostructures","score":0.9150000214576721},{"id":"https://openalex.org/keywords/hexagonal-boron-nitride","display_name":"hexagonal boron nitride","score":0.9909999966621399},{"id":"https://openalex.org/keywords/mos2","display_name":"MoS2","score":0.9940000176429749},{"id":"https://openalex.org/keywords/multilevel-resistive-switching","display_name":"multilevel resistive switching","score":0.9079999923706055},{"id":"https://openalex.org/keywords/metallic-filaments","display_name":"metallic filaments","score":0.6570000052452087},{"id":"https://openalex.org/keywords/multistate-memory","display_name":"multistate memory","score":0.6700000166893005},{"id":"https://openalex.org/keywords/synaptic-weights","display_name":"synaptic weights","score":0.44999998807907104},{"id":"https://openalex.org/keywords/logic-inverter","display_name":"logic inverter","score":0.6399999856948853},{"id":"https://openalex.org/keywords/neuromorphic-computing","display_name":"neuromorphic computing","score":0.8939999938011169},{"id":"https://openalex.org/keywords/in-memory-computing","display_name":"in-memory computing","score":0.9739999771118164},{"id":"https://openalex.org/keywords/multilayer-graphene","display_name":"multilayer graphene","score":0.7089999914169312},{"id":"https://openalex.org/keywords/standby-power-consumption","display_name":"standby power consumption","score":0.6349999904632568}],"concepts":[{"id":"https://openalex.org/C151927369","wikidata":"https://www.wikidata.org/wiki/Q1981312","display_name":"Neuromorphic engineering","level":3,"score":0.9381701946258545},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7388529777526855},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.6768076419830322},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.631841242313385},{"id":"https://openalex.org/C2780423959","wikidata":"https://www.wikidata.org/wiki/Q424257","display_name":"Molybdenum disulfide","level":2,"score":0.6123486161231995},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.5419960021972656},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4755147099494934},{"id":"https://openalex.org/C66949984","wikidata":"https://www.wikidata.org/wiki/Q7662043","display_name":"Synaptic weight","level":3,"score":0.45223212242126465},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44394999742507935},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.4226386845111847},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.41918444633483887},{"id":"https://openalex.org/C190475519","wikidata":"https://www.wikidata.org/wiki/Q544384","display_name":"Massively parallel","level":2,"score":0.41646426916122437},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4156968593597412},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38215136528015137},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3387565314769745},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.2793263792991638},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.23784932494163513},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21394965052604675},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17932093143463135},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.14908218383789062},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08780643343925476},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/aelm.201900333","doi":"https://doi.org/10.1002/aelm.201900333","is_oa":false,"landing_page_url":"https://doi.org/10.1002/aelm.201900333","pdf_url":null,"source":{"id":"https://openalex.org/S2765003236","display_name":"Advanced Electronic Materials","issn_l":"2199-160X","issn":["2199-160X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-2","norway-1","oarl","poland-140","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Advanced Electronic Materials","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"},{"id":"https://openalex.org/F4320337345","display_name":"Office of Naval Research","ror":"https://ror.org/00rk2pe57"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":46,"referenced_works":["https://openalex.org/W1977042446","https://openalex.org/W1978704421","https://openalex.org/W1983254208","https://openalex.org/W1995777198","https://openalex.org/W2015880299","https://openalex.org/W2023264078","https://openalex.org/W2023333002","https://openalex.org/W2026429700","https://openalex.org/W2038754799","https://openalex.org/W2044853455","https://openalex.org/W2048610167","https://openalex.org/W2060526854","https://openalex.org/W2064632620","https://openalex.org/W2096421416","https://openalex.org/W2125389271","https://openalex.org/W2136288682","https://openalex.org/W2163031927","https://openalex.org/W2167267527","https://openalex.org/W2195265150","https://openalex.org/W2312879874","https://openalex.org/W2346106254","https://openalex.org/W2504769000","https://openalex.org/W2577264973","https://openalex.org/W2583873740","https://openalex.org/W2767835898","https://openalex.org/W2768681907","https://openalex.org/W2774297425","https://openalex.org/W2775771159","https://openalex.org/W2781720065","https://openalex.org/W2782634695","https://openalex.org/W2789137959","https://openalex.org/W2790477730","https://openalex.org/W2793979264","https://openalex.org/W2800982507","https://openalex.org/W2804762466","https://openalex.org/W2805362231","https://openalex.org/W2805960735","https://openalex.org/W2811223349","https://openalex.org/W2883281268","https://openalex.org/W2886502897","https://openalex.org/W2891296053","https://openalex.org/W2891562717","https://openalex.org/W2898775615","https://openalex.org/W2907587989","https://openalex.org/W2963597307","https://openalex.org/W3099181240"],"related_works":["https://openalex.org/W2979722113","https://openalex.org/W4249737002","https://openalex.org/W4412361519","https://openalex.org/W4407630988","https://openalex.org/W4415373963","https://openalex.org/W7163205193","https://openalex.org/W2941389263","https://openalex.org/W7131673960","https://openalex.org/W3177004674","https://openalex.org/W4408772709"],"abstract_inverted_index":{"Abstract":[0],"Neuromorphic":[1],"computing":[2,30,41,138],"that":[3,157],"mimics":[4],"the":[5,11,94,99,103,108,112,115,118,150,154,158,173,176,184],"energy\u2010efficient":[6],"cortical":[7],"neural":[8],"network":[9],"in":[10],"human":[12],"brain":[13],"is":[14,43],"attractive":[15],"because":[16],"of":[17,62,90,98,111,117,128,153,178],"its":[18],"possibility":[19],"to":[20,93],"process":[21],"complex":[22],"and":[23,27,35,73,96,140],"massive":[24],"data":[25],"sets":[26],"achieve":[28],"fast":[29],"capability.":[31],"Herein,":[32],"a":[33,48,55,63,76,83,124,166],"heterosynaptic":[34],"programmable":[36],"memtransistor":[37,119],"architecture":[38,161],"with":[39,54,82,123],"high":[40,125],"functionality":[42],"reported":[44],"by":[45,148],"monolithically":[46],"integrating":[47],"hexagonal":[49],"boron":[50],"nitride":[51],"(h\u2010BN)":[52],"memristor":[53],"molybdenum":[56],"disulfide":[57],"(MoS2)":[58],"transistor.":[59],"Memristors":[60],"consisting":[61],"vertically":[64],"stacked":[65],"van":[66],"der":[67],"Waals":[68],"materials":[69],"(multilayer":[70],"graphene":[71],"(MLG)":[72],"h\u2010BN)":[74],"exhibit":[75],"stable":[77],"bipolar":[78],"resistive":[79],"switching":[80,126],"behavior":[81],"memory":[84],"window":[85,139],"more":[86],"than":[87],"three":[88],"orders":[89],"magnitude":[91],"due":[92],"formation":[95],"rupture":[97],"metallic":[100],"filament":[101],"within":[102],"h\u2010BN":[104,113],"layer.":[105],"By":[106],"controlling":[107,149],"resistance":[109],"state":[110],"memristor,":[114,155],"behaviors":[116],"can":[120,145,162],"be":[121,146,163],"programmed":[122],"ratio":[127,144],"\u2248104,":[129],"showing":[130],"\u224816":[131],"pW":[132],"standby":[133],"power":[134],"consumption.":[135],"A":[136],"multistate":[137],"tunable":[141],"current":[142],"on/off":[143],"achieved":[147],"synaptic":[151],"weight":[152],"demonstrating":[156],"presented":[159],"2D":[160],"exploited":[164],"as":[165],"logic":[167],"inverter":[168],"device.":[169],"The":[170],"results":[171],"pave":[172],"way":[174],"toward":[175],"development":[177],"highly":[179],"functional":[180],"neuromorphic":[181],"systems":[182],"for":[183],"next\u2010generation":[185],"in\u2010memory":[186],"computing.":[187]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":3}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2019-07-30T00:00:00"}