{"id":"https://openalex.org/W2961027217","doi":"https://doi.org/10.1166/jno.2019.2662","title":"Design and Analog Performance Analysis of Triple Material Gate Based Doping-Less Tunnel Field Effect Transistor","display_name":"Design and Analog Performance Analysis of Triple Material Gate Based Doping-Less Tunnel Field Effect Transistor","publication_year":2019,"publication_date":"2019-07-09","ids":{"openalex":"https://openalex.org/W2961027217","doi":"https://doi.org/10.1166/jno.2019.2662","mag":"2961027217"},"language":"en","primary_location":{"id":"doi:10.1166/jno.2019.2662","doi":"https://doi.org/10.1166/jno.2019.2662","is_oa":false,"landing_page_url":"https://doi.org/10.1166/jno.2019.2662","pdf_url":null,"source":{"id":"https://openalex.org/S87397198","display_name":"Journal of Nanoelectronics and Optoelectronics","issn_l":"1555-130X","issn":["1555-130X","1555-1318"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","poland-40"],"host_organization":"https://openalex.org/P4310321646","host_organization_name":"American Scientific Publishers","host_organization_lineage":["https://openalex.org/P4310321646"],"host_organization_lineage_names":["American Scientific Publishers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Nanoelectronics and Optoelectronics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075655905","display_name":"Umar Mushtaq","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Umar Mushtaq","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055251730","display_name":"Leo Raj Solay","orcid":"https://orcid.org/0000-0003-2026-3783","observed_orcids":["https://orcid.org/0000-0003-2026-3783"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Leo Raj Solay","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023601066","display_name":"Syed Intekhab Amin","orcid":"https://orcid.org/0000-0002-5731-6247","observed_orcids":["https://orcid.org/0000-0002-5731-6247"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Intekhab Amin","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5064976447","display_name":"Sunny Anand","orcid":"https://orcid.org/0000-0002-0188-5790","observed_orcids":["https://orcid.org/0000-0002-0188-5790"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Sunny Anand","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.813,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.68588493,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"14","issue":"8","first_page":"1177","last_page":"1182"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"tunnel field-effect transistor","score":0.925000011920929},{"id":"https://openalex.org/keywords/gate-design","display_name":"gate design","score":0.4860000014305115},{"id":"https://openalex.org/keywords/analog-performance","display_name":"analog performance","score":0.8500000238418579},{"id":"https://openalex.org/keywords/low-power-transistors","display_name":"low-power transistors","score":0.44699999690055847}],"concepts":[{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5940435528755188},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.592064619064331},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5918160676956177},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.5311169624328613},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48812732100486755},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.47758153080940247},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.335868239402771},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2264476716518402},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.08039754629135132},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1166/jno.2019.2662","doi":"https://doi.org/10.1166/jno.2019.2662","is_oa":false,"landing_page_url":"https://doi.org/10.1166/jno.2019.2662","pdf_url":null,"source":{"id":"https://openalex.org/S87397198","display_name":"Journal of Nanoelectronics and Optoelectronics","issn_l":"1555-130X","issn":["1555-130X","1555-1318"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","poland-40"],"host_organization":"https://openalex.org/P4310321646","host_organization_name":"American Scientific Publishers","host_organization_lineage":["https://openalex.org/P4310321646"],"host_organization_lineage_names":["American Scientific Publishers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Nanoelectronics and Optoelectronics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2947015135","https://openalex.org/W3142223544","https://openalex.org/W3210333679","https://openalex.org/W2617423195","https://openalex.org/W2750602320","https://openalex.org/W2957297127","https://openalex.org/W2905096642","https://openalex.org/W2791714727","https://openalex.org/W2556834831","https://openalex.org/W2968396790"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2019-07-23T00:00:00"}