{"id":"https://openalex.org/W2955101024","doi":"https://doi.org/10.1109/cieec.2018.8745774","title":"Comparative Evaluation of the Short circuit Capability of SiC Planar and Trench Power MOSFET","display_name":"Comparative Evaluation of the Short circuit Capability of SiC Planar and Trench Power MOSFET","publication_year":2018,"publication_date":"2018-11-01","ids":{"openalex":"https://openalex.org/W2955101024","doi":"https://doi.org/10.1109/cieec.2018.8745774","mag":"2955101024"},"language":"en","primary_location":{"id":"doi:10.1109/cieec.2018.8745774","doi":"https://doi.org/10.1109/cieec.2018.8745774","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cieec.2018.8745774","pdf_url":null,"source":{"id":"https://openalex.org/S4363607713","display_name":"IEEE International Electrical and Energy Conference (CIEEC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE 2nd International Electrical and Energy Conference (CIEEC)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Lei Cao","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lei Cao","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106417646","display_name":"Qing Wei Guo","orcid":"https://orcid.org/0000-0002-5417-8846","observed_orcids":["https://orcid.org/0000-0002-5417-8846"]},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qing Guo","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China","institution_ids":["https://openalex.org/I76130692"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5062220386","display_name":"Kuang Sheng","orcid":"https://orcid.org/0000-0001-8839-7281","observed_orcids":["https://orcid.org/0000-0001-8839-7281"]},"institutions":[{"id":"https://openalex.org/I76130692","display_name":"Zhejiang University","ror":"https://ror.org/00a2xv884","country_code":"CN","type":"education","lineage":["https://openalex.org/I76130692"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kuang Sheng","raw_affiliation_strings":["College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China","institution_ids":["https://openalex.org/I76130692"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I76130692"],"apc_list":null,"apc_paid":null,"fwci":3.161,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.93428872,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"653","last_page":"656"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10132","display_name":"Advanced ceramic materials synthesis","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sic-power-mosfets","display_name":"SiC power MOSFETs","score":0.8050000071525574},{"id":"https://openalex.org/keywords/trench-mosfet","display_name":"trench MOSFET","score":0.9789999723434448},{"id":"https://openalex.org/keywords/planar-mosfet","display_name":"planar MOSFET","score":0.9990000128746033},{"id":"https://openalex.org/keywords/short-circuit-robustness","display_name":"short-circuit robustness","score":0.9419999718666077},{"id":"https://openalex.org/keywords/short-circuit-faults","display_name":"short-circuit faults","score":0.671999990940094},{"id":"https://openalex.org/keywords/thermal-simulation","display_name":"thermal simulation","score":0.8679999709129333},{"id":"https://openalex.org/keywords/finite-element-thermal-model","display_name":"finite element thermal model","score":0.843999981880188},{"id":"https://openalex.org/keywords/electric-field-concentration","display_name":"electric field concentration","score":0.8550000190734863},{"id":"https://openalex.org/keywords/current-density","display_name":"current density","score":0.9330000281333923}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8177645802497864},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.7620849609375},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7065233588218689},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.6771442890167236},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.6546629667282104},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.6295644044876099},{"id":"https://openalex.org/C68583231","wikidata":"https://www.wikidata.org/wiki/Q206907","display_name":"Short circuit","level":3,"score":0.47963839769363403},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4401724338531494},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4346499443054199},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41813206672668457},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3359295129776001},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.25673699378967285},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.20234805345535278},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.129243403673172},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10004746913909912},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cieec.2018.8745774","doi":"https://doi.org/10.1109/cieec.2018.8745774","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cieec.2018.8745774","pdf_url":null,"source":{"id":"https://openalex.org/S4363607713","display_name":"IEEE International Electrical and Energy Conference (CIEEC)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE 2nd International Electrical and Energy Conference (CIEEC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1589032674","https://openalex.org/W1980230573","https://openalex.org/W2024782835","https://openalex.org/W2032767067","https://openalex.org/W2059284919","https://openalex.org/W2094593557","https://openalex.org/W2102825555","https://openalex.org/W2127078064","https://openalex.org/W2136250228","https://openalex.org/W2557203474","https://openalex.org/W2572224159","https://openalex.org/W4245755231","https://openalex.org/W6635261227"],"related_works":["https://openalex.org/W3120941550","https://openalex.org/W4293095658","https://openalex.org/W2810590202","https://openalex.org/W2769268428","https://openalex.org/W2808471395","https://openalex.org/W4380681517","https://openalex.org/W4205516743","https://openalex.org/W2958918340","https://openalex.org/W7161600067","https://openalex.org/W2962288370"],"abstract_inverted_index":{"In":[0],"this":[1,28],"paper,":[2],"the":[3,62,99,102,116],"short":[4,22,31,108,130],"circuit":[5,23,32,109,131],"robustness":[6,110],"of":[7,39,82,105,111,120],"SiC":[8,16,44,64,72,112],"trench":[9,45,65,113],"MOSFETs":[10,46,49],"is":[11,35,91,115],"analyzed":[12,79],"and":[13,47,54],"compared":[14],"with":[15,50,80],"planar":[17,48],"MOSFETs.":[18,40],"Thermal":[19],"simulation":[20],"during":[21,129],"operations":[24],"are":[25,57,78],"studied":[26],"in":[27],"work.":[29],"A":[30],"test":[33,76],"bench":[34],"constructed":[36,92],"for":[37],"tests":[38],"Commercially":[41],"available":[42],"650V":[43,63,71],"similar":[51],"rated":[52],"voltage":[53],"on-state":[55],"resistance":[56],"tested.":[58],"From":[59],"experimental":[60],"results,":[61],"MOSFET":[66,114],"fails":[67],"much":[68],"earlier":[69],"than":[70],"Planar":[73],"MOSFET.":[74],"The":[75,89],"results":[77],"aid":[81],"one":[83],"dimensional":[84],"finite":[85],"element":[86],"thermal":[87,100],"model.":[88],"model":[90],"based":[93],"on":[94],"structure":[95],"parameters.":[96],"According":[97],"to":[98],"model,":[101],"dominant":[103],"factor":[104],"a":[106],"weaker":[107],"highly":[117],"concentrated":[118],"distribution":[119],"electric":[121],"field":[122],"as":[123,125],"well":[124],"intense":[126],"current":[127],"density":[128],"operation.":[132]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":1}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2019-07-12T00:00:00"}