{"id":"https://openalex.org/W2948814545","doi":"https://doi.org/10.1063/1.5096889","title":"Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal","display_name":"Segregation and activation of Ga in high Ge content SiGe by UV melt laser anneal","publication_year":2019,"publication_date":"2019-06-03","ids":{"openalex":"https://openalex.org/W2948814545","doi":"https://doi.org/10.1063/1.5096889","mag":"2948814545"},"language":"en","primary_location":{"id":"doi:10.1063/1.5096889","doi":"https://doi.org/10.1063/1.5096889","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.5096889","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070330276","display_name":"Toshiyuki Tabata","orcid":"https://orcid.org/0000-0003-4923-5663","observed_orcids":["https://orcid.org/0000-0003-4923-5663"]},"institutions":[{"id":"https://openalex.org/I4210115884","display_name":"Laser Systems & Solutions of Europe (France)","ror":"https://ror.org/02hynf559","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210095113","https://openalex.org/I4210115884"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Toshiyuki Tabata","raw_affiliation_strings":["Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France"],"raw_orcid":"https://orcid.org/0000-0003-4923-5663","affiliations":[{"raw_affiliation_string":"Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France","institution_ids":["https://openalex.org/I4210115884"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069442887","display_name":"J. Aubin","orcid":"https://orcid.org/0000-0003-1806-1066","observed_orcids":["https://orcid.org/0000-0003-1806-1066"]},"institutions":[{"id":"https://openalex.org/I4210115884","display_name":"Laser Systems & Solutions of Europe (France)","ror":"https://ror.org/02hynf559","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210095113","https://openalex.org/I4210115884"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Joris Aubin","raw_affiliation_strings":["Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France","institution_ids":["https://openalex.org/I4210115884"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009800696","display_name":"Karim Huet","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210115884","display_name":"Laser Systems & Solutions of Europe (France)","ror":"https://ror.org/02hynf559","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210095113","https://openalex.org/I4210115884"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Karim Huet","raw_affiliation_strings":["Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France","institution_ids":["https://openalex.org/I4210115884"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090082700","display_name":"Fulvio Mazzamuto","orcid":"https://orcid.org/0000-0002-6056-951X","observed_orcids":["https://orcid.org/0000-0002-6056-951X"]},"institutions":[{"id":"https://openalex.org/I4210115884","display_name":"Laser Systems & Solutions of Europe (France)","ror":"https://ror.org/02hynf559","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210095113","https://openalex.org/I4210115884"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Fulvio Mazzamuto","raw_affiliation_strings":["Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laser Systems & Solutions of Europe (LASSE) , 14\u201338 rue Alexandre, Bldg D, Gennevilliers F-92230, France","institution_ids":["https://openalex.org/I4210115884"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210115884"],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.3393,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.78483525,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"125","issue":"21","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9624000191688538,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9624000191688538,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.02759999968111515,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.002199999988079071,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-doping","display_name":"gallium doping","score":0.5080000162124634},{"id":"https://openalex.org/keywords/sige-epilayers","display_name":"SiGe epilayers","score":0.7910000085830688},{"id":"https://openalex.org/keywords/impurity-segregation","display_name":"impurity segregation","score":0.8429999947547913},{"id":"https://openalex.org/keywords/dopant-activation","display_name":"dopant activation","score":0.9890000224113464},{"id":"https://openalex.org/keywords/uv-excimer-laser","display_name":"UV excimer laser","score":0.7300000190734863},{"id":"https://openalex.org/keywords/solid-solubility-limit","display_name":"solid solubility limit","score":0.9150000214576721},{"id":"https://openalex.org/keywords/solidification","display_name":"solidification","score":0.42500001192092896},{"id":"https://openalex.org/keywords/solid-liquid-interface","display_name":"solid-liquid interface","score":0.6919999718666077},{"id":"https://openalex.org/keywords/solidification-velocity","display_name":"solidification velocity","score":0.7960000038146973},{"id":"https://openalex.org/keywords/contact-resistivity","display_name":"contact resistivity","score":0.8560000061988831}],"concepts":[{"id":"https://openalex.org/C191952053","wikidata":"https://www.wikidata.org/wiki/Q15119237","display_name":"Dopant","level":3,"score":0.8752994537353516},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8055194616317749},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6633955836296082},{"id":"https://openalex.org/C2780081452","wikidata":"https://www.wikidata.org/wiki/Q5297293","display_name":"Dopant Activation","level":4,"score":0.6347153186798096},{"id":"https://openalex.org/C155574463","wikidata":"https://www.wikidata.org/wiki/Q170731","display_name":"Solubility","level":2,"score":0.4487178325653076},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4383923411369324},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.41006192564964294},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36304551362991333},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.35958153009414673},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3369213938713074},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.22213590145111084},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.13633516430854797},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10549125075340271},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.5096889","doi":"https://doi.org/10.1063/1.5096889","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.5096889","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W264764943","https://openalex.org/W653408234","https://openalex.org/W1504371451","https://openalex.org/W1976445662","https://openalex.org/W1985890096","https://openalex.org/W1986669694","https://openalex.org/W1988332769","https://openalex.org/W1993242760","https://openalex.org/W2004560499","https://openalex.org/W2030793361","https://openalex.org/W2036134495","https://openalex.org/W2046440873","https://openalex.org/W2047602187","https://openalex.org/W2056572873","https://openalex.org/W2070170478","https://openalex.org/W2086869330","https://openalex.org/W2176265295","https://openalex.org/W2336885284","https://openalex.org/W2524694963","https://openalex.org/W2526406700","https://openalex.org/W2744027980","https://openalex.org/W2768401044","https://openalex.org/W2786668094","https://openalex.org/W2794119033","https://openalex.org/W2893277039","https://openalex.org/W2894073257","https://openalex.org/W2896301699","https://openalex.org/W2969332251","https://openalex.org/W4245654886"],"related_works":["https://openalex.org/W2989367665","https://openalex.org/W2969332251","https://openalex.org/W2950935375","https://openalex.org/W3128339326","https://openalex.org/W3015388627","https://openalex.org/W2965932811","https://openalex.org/W3203182025","https://openalex.org/W3014156422","https://openalex.org/W2274550618","https://openalex.org/W3162080126"],"abstract_inverted_index":{"The":[0,101],"feasibility":[1],"of":[2,15,41,52,70,111,151,176],"dopant":[3,102,152],"activation":[4,40,85],"surpassing":[5],"the":[6,37,88,94,107,112,129,140,149,155,173],"equilibrium":[7,16,89],"solid":[8,90],"solubility":[9,91],"limit":[10,92],"by":[11,118],"using":[12],"an":[13,29],"out":[14],"melt":[17,97,132,142],"laser":[18,33],"annealing":[19,34],"(MLA)":[20],"process":[21],"was":[22,99,115,126,136],"investigated.":[23],"To":[24],"that":[25,164],"end,":[26],"we":[27,79],"used":[28],"UV":[30],"excimer":[31],"nanosecond":[32],"and":[35,39],"studied":[36],"segregation":[38,50,103],"dopants":[42],"in":[43,63,128,139,172,179],"a":[44,68,169,180],"Ga-implanted":[45],"SiGe":[46,181],"50%":[47],"epilayer.":[48],"Dopant":[49],"is":[51,67],"great":[53],"interest":[54],"for":[55],"future":[56],"nodes":[57],"to":[58],"further":[59],"improve":[60],"contact":[61],"resistivity":[62],"transistors.":[64],"However,":[65],"there":[66],"lack":[69],"in-depth":[71],"study":[72],"about":[73],"their":[74],"activation.":[75],"In":[76],"this":[77],"paper,":[78],"first":[80],"reported":[81],"very":[82,121],"high":[83],"Ga":[84,177],"well":[86],"above":[87],"when":[93],"partial":[95,141],"Si0.5Ge0.5:Ga":[96,113,131],"regime":[98],"assessed.":[100],"phenomenon,":[104],"together":[105],"with":[106],"surface":[108,124],"morphology":[109],"change":[110],"epilayer,":[114],"then":[116],"induced":[117],"MLA.":[119],"A":[120],"clear":[122],"honeycomblike":[123,145],"pattern":[125,146],"observed":[127],"full":[130],"regime,":[133],"while":[134],"it":[135],"less":[137],"pronounced":[138],"regime.":[143],"This":[144],"would":[147],"be":[148],"result":[150],"precipitation":[153],"at":[154],"liquid\u2013solid":[156],"interface":[157],"during":[158],"solidification.":[159],"Our":[160],"simulation":[161],"results":[162],"highlighted":[163],"solidification":[165],"velocity":[166],"could":[167],"play":[168],"key":[170],"role":[171],"substitutional":[174],"incorporation":[175],"atoms":[178],"lattice.":[182]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2019-06-14T00:00:00"}