{"id":"https://openalex.org/W2945872178","doi":"https://doi.org/10.1109/irps.2019.8720612","title":"VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate","display_name":"VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate","publication_year":2019,"publication_date":"2019-03-01","ids":{"openalex":"https://openalex.org/W2945872178","doi":"https://doi.org/10.1109/irps.2019.8720612","mag":"2945872178"},"language":"en","primary_location":{"id":"doi:10.1109/irps.2019.8720612","doi":"https://doi.org/10.1109/irps.2019.8720612","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720612","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://hal.science/hal-02099781/document","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019934511","display_name":"Besar Asllani","orcid":"https://orcid.org/0000-0002-3226-2051","observed_orcids":["https://orcid.org/0000-0002-3226-2051"]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]},{"id":"https://openalex.org/I48430043","display_name":"Institut National des Sciences Appliqu\u00e9es de Lyon","ror":"https://ror.org/050jn9y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I203339264","https://openalex.org/I48430043"]}],"countries":["FR","GB"],"is_corresponding":false,"raw_author_name":"Besar Asllani","raw_affiliation_strings":["University of Nottingham, University Park, Nottingham, UK","EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Nottingham, University Park, Nottingham, UK","institution_ids":["https://openalex.org/I142263535"]},{"raw_affiliation_string":"EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","institution_ids":[]},{"raw_affiliation_string":"INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)","institution_ids":["https://openalex.org/I48430043"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056248361","display_name":"Alberto Castellazzi","orcid":"https://orcid.org/0000-0003-0079-3293","observed_orcids":["https://orcid.org/0000-0003-0079-3293"]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Alberto Castellazzi","raw_affiliation_strings":["University of Nottingham, University Park, Nottingham, UK","Power Electronics Machines and Control (PEMC) Group (United Kingdom)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Nottingham, University Park, Nottingham, UK","institution_ids":["https://openalex.org/I142263535"]},{"raw_affiliation_string":"Power Electronics Machines and Control (PEMC) Group (United Kingdom)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014116339","display_name":"Oriol Avi\u00f1\u00f3-Salvad\u00f3","orcid":"https://orcid.org/0000-0003-3099-3827","observed_orcids":["https://orcid.org/0000-0003-3099-3827"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210145913","display_name":"Laboratoire Amp\u00e8re","ror":"https://ror.org/04xbczw40","country_code":"FR","type":"facility","lineage":["https://openalex.org/I100532134","https://openalex.org/I112936343","https://openalex.org/I1294671590","https://openalex.org/I203339264","https://openalex.org/I4210145913","https://openalex.org/I48430043"]},{"id":"https://openalex.org/I48430043","display_name":"Institut National des Sciences Appliqu\u00e9es de Lyon","ror":"https://ror.org/050jn9y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I203339264","https://openalex.org/I48430043"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Oriol Avino Salvado","raw_affiliation_strings":["Univ Lyon, CNRS, Amp\u00e8re, France","EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ Lyon, CNRS, Amp\u00e8re, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210145913"]},{"raw_affiliation_string":"EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","institution_ids":[]},{"raw_affiliation_string":"INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)","institution_ids":["https://openalex.org/I48430043"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071496432","display_name":"Asad Fayyaz","orcid":"https://orcid.org/0000-0002-2114-5685","observed_orcids":["https://orcid.org/0000-0002-2114-5685"]},"institutions":[{"id":"https://openalex.org/I142263535","display_name":"University of Nottingham","ror":"https://ror.org/01ee9ar58","country_code":"GB","type":"education","lineage":["https://openalex.org/I142263535"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Asad Fayyaz","raw_affiliation_strings":["University of Nottingham, University Park, Nottingham, UK","Power Electronics Machines and Control (PEMC) Group (United Kingdom)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Nottingham, University Park, Nottingham, UK","institution_ids":["https://openalex.org/I142263535"]},{"raw_affiliation_string":"Power Electronics Machines and Control (PEMC) Group (United Kingdom)","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047640045","display_name":"Herv\u00e9 Morel","orcid":"https://orcid.org/0000-0001-7866-0437","observed_orcids":["https://orcid.org/0000-0001-7866-0437"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210145913","display_name":"Laboratoire Amp\u00e8re","ror":"https://ror.org/04xbczw40","country_code":"FR","type":"facility","lineage":["https://openalex.org/I100532134","https://openalex.org/I112936343","https://openalex.org/I1294671590","https://openalex.org/I203339264","https://openalex.org/I4210145913","https://openalex.org/I48430043"]},{"id":"https://openalex.org/I48430043","display_name":"Institut National des Sciences Appliqu\u00e9es de Lyon","ror":"https://ror.org/050jn9y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I203339264","https://openalex.org/I48430043"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Herve Morel","raw_affiliation_strings":["Univ Lyon, CNRS, Amp\u00e8re, France","EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ Lyon, CNRS, Amp\u00e8re, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210145913"]},{"raw_affiliation_string":"EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","institution_ids":[]},{"raw_affiliation_string":"INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)","institution_ids":["https://openalex.org/I48430043"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5012011668","display_name":"Dominique Planson","orcid":"https://orcid.org/0000-0002-1617-8757","observed_orcids":["https://orcid.org/0000-0002-1617-8757"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210145913","display_name":"Laboratoire Amp\u00e8re","ror":"https://ror.org/04xbczw40","country_code":"FR","type":"facility","lineage":["https://openalex.org/I100532134","https://openalex.org/I112936343","https://openalex.org/I1294671590","https://openalex.org/I203339264","https://openalex.org/I4210145913","https://openalex.org/I48430043"]},{"id":"https://openalex.org/I48430043","display_name":"Institut National des Sciences Appliqu\u00e9es de Lyon","ror":"https://ror.org/050jn9y42","country_code":"FR","type":"education","lineage":["https://openalex.org/I203339264","https://openalex.org/I48430043"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Dominique Planson","raw_affiliation_strings":["Univ Lyon, CNRS, Amp\u00e8re, France","EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Univ Lyon, CNRS, Amp\u00e8re, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210145913"]},{"raw_affiliation_string":"EE - Amp\u00e8re, D\u00e9partement Energie Electrique (France)","institution_ids":[]},{"raw_affiliation_string":"INSA Lyon - Institut National des Sciences Appliqu\u00e9es de Lyon (20 Avenue Albert Einstein, \r\n69621 Villeurbanne cedex - France)","institution_ids":["https://openalex.org/I48430043"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.9604,"has_fulltext":true,"cited_by_count":21,"citation_normalized_percentile":{"value":0.94820451,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/threshold-voltage-hysteresis","display_name":"threshold voltage hysteresis","score":0.859000027179718},{"id":"https://openalex.org/keywords/sic-power-mosfets","display_name":"SiC power MOSFETs","score":0.9580000042915344},{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.9279999732971191},{"id":"https://openalex.org/keywords/interface-capacitance","display_name":"interface capacitance","score":0.6650000214576721},{"id":"https://openalex.org/keywords/interface-charge","display_name":"interface charge","score":0.6399999856948853},{"id":"https://openalex.org/keywords/trench-gate","display_name":"trench gate","score":0.7710000276565552},{"id":"https://openalex.org/keywords/planar-gate","display_name":"planar gate","score":0.9990000128746033},{"id":"https://openalex.org/keywords/subthreshold-operation","display_name":"subthreshold operation","score":0.8220000267028809},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.6269999742507935},{"id":"https://openalex.org/keywords/trap-characterization","display_name":"trap characterization","score":0.46399998664855957},{"id":"https://openalex.org/keywords/technology-maturity","display_name":"technology maturity","score":0.6029999852180481},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.6650000214576721}],"concepts":[{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.709801971912384},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6864211559295654},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6814783811569214},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.6585356593132019},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.6238442659378052},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5856783986091614},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.5775663256645203},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.5297789573669434},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5210984945297241},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5067892670631409},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5066254734992981},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.49953174591064453},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.4627978503704071},{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.4435510039329529},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4289616346359253},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42397406697273254},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3907262086868286},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.38852447271347046},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.34431856870651245},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2808326482772827},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.26096659898757935},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14832445979118347},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14495712518692017},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10049840807914734},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.06933006644248962},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/irps.2019.8720612","doi":"https://doi.org/10.1109/irps.2019.8720612","is_oa":false,"landing_page_url":"https://doi.org/10.1109/irps.2019.8720612","pdf_url":null,"source":{"id":"https://openalex.org/S4210238090","display_name":"IEEE International Reliability Physics Symposium proceedings","issn_l":"0735-0791","issn":["0735-0791","1541-7026","1938-1891"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE International Reliability Physics Symposium (IRPS)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-02099781v1","doi":null,"is_oa":true,"landing_page_url":"https://hal.science/hal-02099781v1/document","pdf_url":"https://hal.science/hal-02099781/document","source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":{"id":"pmh:oai:HAL:hal-02099781v1","doi":null,"is_oa":true,"landing_page_url":"https://hal.science/hal-02099781v1/document","pdf_url":"https://hal.science/hal-02099781/document","source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IRPS, Mar 2019, Monterey, CA, United States. ⟨10.1109/IRPS.2019.8720612⟩","raw_type":"info:eu-repo/semantics/conferenceObject"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2945872178.pdf","grobid_xml":"https://content.openalex.org/works/W2945872178.grobid-xml"},"referenced_works_count":14,"referenced_works":["https://openalex.org/W239999120","https://openalex.org/W2037101814","https://openalex.org/W2041838574","https://openalex.org/W2091749383","https://openalex.org/W2092665187","https://openalex.org/W2117712212","https://openalex.org/W2503541310","https://openalex.org/W2584893593","https://openalex.org/W2770666768","https://openalex.org/W2794184233","https://openalex.org/W2808289442","https://openalex.org/W2892955846","https://openalex.org/W2909738171","https://openalex.org/W4241070446"],"related_works":["https://openalex.org/W4225299109","https://openalex.org/W4281732821","https://openalex.org/W2964101731","https://openalex.org/W4403024227","https://openalex.org/W2984175522","https://openalex.org/W2803528042","https://openalex.org/W2961232598","https://openalex.org/W3110755436","https://openalex.org/W2983179774","https://openalex.org/W3173041036"],"abstract_inverted_index":{"This":[0,117],"paper":[1,85,118],"contributes":[2],"to":[3,28,54,107,127],"investigations":[4],"on":[5,74],"the":[6,24,61,70,75,79,92,97,101,121,128,131],"threshold-voltage":[7],"(VTH)":[8],"hysteresis":[9,125],"in":[10,47,52,113],"SiC":[11],"power":[12],"MOSFETs.":[13],"Such":[14],"effect":[15],"is":[16],"of":[17,23,69,78,94,103,110,123,130,133],"relevance":[18],"mainly":[19],"for":[20,37,90],"sub-threshold":[21],"operation":[22],"devices,":[25,50,99],"but":[26],"needs":[27],"be":[29],"told":[30],"apart":[31],"from":[32],"stress-related":[33],"VTH-":[34],"drift":[35],"phenomena":[36],"technology":[38],"maturity":[39,112],"and":[40,82],"reliability":[41],"validation":[42],"goals.":[43],"Important":[44],"differences":[45],"exist":[46],"commercially":[48],"available":[49],"particularly":[51],"relation":[53],"their":[55],"gate":[56],"technology,":[57],"planar":[58],"or":[59],"trench,":[60],"latter":[62],"also":[63,119],"showing":[64],"a":[65,88,105],"marked":[66],"temperature":[67],"dependence":[68],"hysteretic":[71],"range.":[72],"Based":[73],"experimental":[76],"characterization":[77],"interface":[80],"capacitance":[81,124],"charge,":[83],"this":[84],"puts":[86],"forward":[87],"methodology":[89],"determining":[91],"types":[93],"traps":[95],"affecting":[96],"various":[98],"with":[100],"aim":[102],"contributing":[104],"tool":[106],"assist":[108],"driving":[109],"technological":[111],"future":[114],"generation":[115],"devices.":[116],"shows":[120],"potential":[122],"measurement":[126],"estimation":[129],"distribution":[132],"interface.":[134]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":2}],"updated_date":"2026-10-25T09:29:13.331239","created_date":"2019-05-29T00:00:00"}