{"id":"https://openalex.org/W2919829809","doi":"https://doi.org/10.1109/ted.2019.2899586","title":"Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer","display_name":"Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer","publication_year":2019,"publication_date":"2019-02-27","ids":{"openalex":"https://openalex.org/W2919829809","doi":"https://doi.org/10.1109/ted.2019.2899586","mag":"2919829809"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2019.2899586","doi":"https://doi.org/10.1109/ted.2019.2899586","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2019.2899586","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016298544","display_name":"Min Hoe Cho","orcid":"https://orcid.org/0000-0001-7206-0414","observed_orcids":["https://orcid.org/0000-0001-7206-0414"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min Hoe Cho","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113800815","display_name":"Hyunju Seol","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunju Seol","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103785870","display_name":"Aeran Song","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Aeran Song","raw_affiliation_strings":["Division of Physics and Semiconductor Science, Dongguk University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Division of Physics and Semiconductor Science, Dongguk University, Seoul, South Korea","institution_ids":["https://openalex.org/I205490536"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009930132","display_name":"Seonjun Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonjun Choi","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101744086","display_name":"Yun\u2010Heub Song","orcid":"https://orcid.org/0000-0001-5402-6765","observed_orcids":["https://orcid.org/0000-0001-5402-6765"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yunheub Song","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-5402-6765","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007065295","display_name":"Pil Sang Yun","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210131320","display_name":"LG (South Korea)","ror":"https://ror.org/03ddh2c27","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210131320"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Pil Sang Yun","raw_affiliation_strings":["Research and Development Center, LG Display Company, Paju, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, LG Display Company, Paju, South Korea","institution_ids":["https://openalex.org/I4210131320"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070684107","display_name":"Kwun\u2010Bum Chung","orcid":"https://orcid.org/0000-0001-8877-5297","observed_orcids":["https://orcid.org/0000-0001-8877-5297"]},"institutions":[{"id":"https://openalex.org/I205490536","display_name":"Dongguk University","ror":"https://ror.org/057q6n778","country_code":"KR","type":"education","lineage":["https://openalex.org/I205490536"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwun-Bum Chung","raw_affiliation_strings":["Division of Physics and Semiconductor Science, Dongguk University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-8877-5297","affiliations":[{"raw_affiliation_string":"Division of Physics and Semiconductor Science, Dongguk University, Seoul, South Korea","institution_ids":["https://openalex.org/I205490536"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030626205","display_name":"Jong Uk Bae","orcid":"https://orcid.org/0000-0001-7410-4468","observed_orcids":["https://orcid.org/0000-0001-7410-4468"]},"institutions":[{"id":"https://openalex.org/I4210131320","display_name":"LG (South Korea)","ror":"https://ror.org/03ddh2c27","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210131320"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jong Uk Bae","raw_affiliation_strings":["Research and Development Center, LG Display Company, Paju, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, LG Display Company, Paju, South Korea","institution_ids":["https://openalex.org/I4210131320"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059005462","display_name":"Kwon\u2010Shik Park","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210131320","display_name":"LG (South Korea)","ror":"https://ror.org/03ddh2c27","country_code":"KR","type":"company","lineage":["https://openalex.org/I4210131320"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kwon-Shik Park","raw_affiliation_strings":["Research and Development Center, LG Display Company, Paju, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research and Development Center, LG Display Company, Paju, South Korea","institution_ids":["https://openalex.org/I4210131320"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005183857","display_name":"Jae Kyeong Jeong","orcid":"https://orcid.org/0000-0003-3857-1039","observed_orcids":["https://orcid.org/0000-0003-3857-1039"]},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Kyeong Jeong","raw_affiliation_strings":["Department of Electronic Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-3857-1039","affiliations":[{"raw_affiliation_string":"Department of Electronic Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2045,"currency":"USD","value_usd":2045},"apc_paid":null,"fwci":5.2373,"has_fulltext":false,"cited_by_count":152,"citation_normalized_percentile":{"value":0.96618987,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":98,"max":100},"biblio":{"volume":"66","issue":"4","first_page":"1783","last_page":"1788"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10090","display_name":"ZnO doping and properties","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-indium-gallium-zinc-oxide","display_name":"amorphous indium gallium zinc oxide","score":0.9789999723434448},{"id":"https://openalex.org/keywords/a-igzo-thin-film-transistors","display_name":"a-IGZO thin-film transistors","score":0.9269999861717224},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"atomic layer deposition","score":0.9649999737739563},{"id":"https://openalex.org/keywords/magnetron-sputtering","display_name":"magnetron sputtering","score":0.9779999852180481},{"id":"https://openalex.org/keywords/channel-layer","display_name":"channel layer","score":0.5799999833106995},{"id":"https://openalex.org/keywords/field-effect-mobility","display_name":"field-effect mobility","score":0.8169999718666077},{"id":"https://openalex.org/keywords/oxygen-vacancies","display_name":"oxygen vacancies","score":0.9300000071525574},{"id":"https://openalex.org/keywords/atomic-packing-density","display_name":"atomic packing density","score":0.824999988079071},{"id":"https://openalex.org/keywords/sp-hybridization","display_name":"sp hybridization","score":0.7129999995231628},{"id":"https://openalex.org/keywords/gate-bias-stress-stability","display_name":"gate bias stress stability","score":0.6930000185966492},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.6259999871253967}],"concepts":[{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.4340786933898926},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41524964570999146},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.40105515718460083},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3475738763809204},{"id":"https://openalex.org/C71240020","wikidata":"https://www.wikidata.org/wiki/Q186011","display_name":"Stereochemistry","level":1,"score":0.33665791153907776},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.3258900046348572},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2927214503288269},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.16759181022644043}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ted.2019.2899586","doi":"https://doi.org/10.1109/ted.2019.2899586","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2019.2899586","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G8500495120","display_name":null,"funder_award_id":"10080689","funder_id":"https://openalex.org/F4320321640","funder_display_name":"Ministry of Knowledge Economy"}],"funders":[{"id":"https://openalex.org/F4320321640","display_name":"Ministry of Knowledge Economy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322382","display_name":"LG Display","ror":"https://ror.org/03ddh2c27"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":27,"referenced_works":["https://openalex.org/W421087446","https://openalex.org/W1982968328","https://openalex.org/W1992521802","https://openalex.org/W1999589524","https://openalex.org/W2008362094","https://openalex.org/W2014653312","https://openalex.org/W2017534819","https://openalex.org/W2020915548","https://openalex.org/W2024051100","https://openalex.org/W2029156225","https://openalex.org/W2038313135","https://openalex.org/W2046384765","https://openalex.org/W2055061721","https://openalex.org/W2090036810","https://openalex.org/W2124180377","https://openalex.org/W2131716975","https://openalex.org/W2159799333","https://openalex.org/W2162186538","https://openalex.org/W2166232528","https://openalex.org/W2312411883","https://openalex.org/W2342612709","https://openalex.org/W2550692454","https://openalex.org/W2598729472","https://openalex.org/W2729746850","https://openalex.org/W2751309266","https://openalex.org/W2793355244","https://openalex.org/W2828185643"],"related_works":["https://openalex.org/W3208124405","https://openalex.org/W3198278522","https://openalex.org/W2947541204","https://openalex.org/W3141090719","https://openalex.org/W2757466017","https://openalex.org/W4393147945","https://openalex.org/W4407168902","https://openalex.org/W4223940083","https://openalex.org/W2342821466","https://openalex.org/W4388901251"],"abstract_inverted_index":{"The":[0,33],"structural,":[1],"chemical,":[2],"and":[3,17,52,65,126],"electrical":[4],"properties":[5],"of":[6,46,58,62,71,82,105],"amorphous":[7],"indium":[8],"gallium":[9],"zinc":[10],"oxide":[11],"(a-IGZO)":[12],"films":[13,27],"by":[14,96,145],"magnetron":[15],"sputtering":[16],"atomic":[18,40],"layer":[19],"deposition":[20],"(ALD)":[21],"were":[22,118,130],"investigated":[23],"where":[24],"both":[25,117],"a-IGZO":[26,35,74],"had":[28],"a":[29,77],"comparable":[30],"cation":[31],"composition.":[32],"ALD-derived":[34,139],"film":[36],"exhibited":[37],"the":[38,43,53,56,59,72,83,89,106,121,134],"higher":[39],"packing":[41],"density,":[42],"effective":[44],"suppression":[45],"trap-like":[47,148],"oxygen":[48],"vacancy":[49],"defect":[50],"(VO),":[51],"enhancement":[54],"in":[55,80],"hybridization":[57],"sp":[60],"orbital":[61],"In,":[63],"Ga,":[64],"Zn":[66],"cations":[67],"compared":[68,102],"to":[69,103],"those":[70],"sputtered":[73,107],"film.":[75],"Hence,":[76],"significant":[78],"improvement":[79],"terms":[81],"field-effect":[84],"mobility":[85],"was":[86],"observed":[87],"for":[88,116,133],"thin-film":[90],"transistors":[91,136],"with":[92,137],"an":[93,138],"In0.50Ga0.34Zn0.16O":[94],"channel":[95],"ALD":[97],"(36.6":[98],"cm$^{\\textsf":[99,111],"{2}}/\\text{V}\\cdot":[100,112],"\\text{s}$)":[101],"that":[104],"In0.48Ga0.38Zn0.14O":[108],"transistor":[109],"(20.1":[110],"\\text{s}$);":[113],"the${I}_{\\text":[114],"{ON/OFF}}$ratios":[115],"~107.":[119],"Simultaneously,":[120],"gate":[122],"bias":[123],"stress":[124,128],"stability":[125,129],"photobias":[127],"also":[131],"improved":[132],"IGZO":[135],"channel,":[140],"which":[141],"can":[142],"be":[143],"explained":[144],"its":[146],"reduced":[147],"VOdensity.":[149]},"counts_by_year":[{"year":2026,"cited_by_count":23},{"year":2025,"cited_by_count":28},{"year":2024,"cited_by_count":28},{"year":2023,"cited_by_count":15},{"year":2022,"cited_by_count":20},{"year":2021,"cited_by_count":19},{"year":2020,"cited_by_count":12},{"year":2019,"cited_by_count":7}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2019-03-11T00:00:00"}