{"id":"https://openalex.org/W2914666757","doi":"https://doi.org/10.1149/2.0091907jss","title":"60Co Gamma Ray Damage in Homoepitaxial \u03b2-Ga2O3Schottky Rectifiers","display_name":"60Co Gamma Ray Damage in Homoepitaxial \u03b2-Ga2O3Schottky Rectifiers","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2914666757","doi":"https://doi.org/10.1149/2.0091907jss","mag":"2914666757"},"language":"en","primary_location":{"id":"doi:10.1149/2.0091907jss","doi":"https://doi.org/10.1149/2.0091907jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0091907jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0091907jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"hybrid","oa_url":"https://iopscience.iop.org/article/10.1149/2.0091907jss/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103082782","display_name":"Jiancheng Yang","orcid":"https://orcid.org/0000-0002-8941-2591","observed_orcids":["https://orcid.org/0000-0002-8941-2591"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jiancheng Yang","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022012531","display_name":"Gregory J. Koller","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Gregory J. Koller","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061088075","display_name":"Chaker Fares","orcid":"https://orcid.org/0000-0001-9596-2381","observed_orcids":["https://orcid.org/0000-0001-9596-2381"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chaker Fares","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA"],"raw_orcid":"https://orcid.org/0000-0001-9596-2381","affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100641969","display_name":"Fan Ren","orcid":"https://orcid.org/0000-0001-9234-019X","observed_orcids":["https://orcid.org/0000-0001-9234-019X"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"F. Ren","raw_affiliation_strings":["Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA"],"raw_orcid":"https://orcid.org/0000-0001-9234-019X","affiliations":[{"raw_affiliation_string":"Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085381025","display_name":"S. J. Pearton","orcid":"https://orcid.org/0000-0001-6498-1256","observed_orcids":["https://orcid.org/0000-0001-6498-1256"]},"institutions":[{"id":"https://openalex.org/I33213144","display_name":"University of Florida","ror":"https://ror.org/02y3ad647","country_code":"US","type":"education","lineage":["https://openalex.org/I33213144"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. J. Pearton","raw_affiliation_strings":["Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA"],"raw_orcid":"https://orcid.org/0000-0001-6498-1256","affiliations":[{"raw_affiliation_string":"Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA","institution_ids":["https://openalex.org/I33213144"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088859102","display_name":"Jinho Bae","orcid":"https://orcid.org/0000-0002-5298-0122","observed_orcids":["https://orcid.org/0000-0002-5298-0122"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jinho Bae","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100462779","display_name":"Jihyun Kim","orcid":"https://orcid.org/0000-0002-5634-8394","observed_orcids":["https://orcid.org/0000-0002-5634-8394","https://orcid.org/0000-0002-5119-6627"]},"institutions":[{"id":"https://openalex.org/I197347611","display_name":"Korea University","ror":"https://ror.org/047dqcg40","country_code":"KR","type":"education","lineage":["https://openalex.org/I197347611"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jihyun Kim","raw_affiliation_strings":["Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul, Korea"],"raw_orcid":"https://orcid.org/0000-0002-5634-8394","affiliations":[{"raw_affiliation_string":"Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul, Korea","institution_ids":["https://openalex.org/I197347611"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013491544","display_name":"David John Smith","orcid":"https://orcid.org/0000-0002-8810-4386","observed_orcids":["https://orcid.org/0000-0002-8810-4386","https://orcid.org/0000-0002-1526-7766"]},"institutions":[{"id":"https://openalex.org/I55732556","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40","country_code":"US","type":"education","lineage":["https://openalex.org/I55732556"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David J. Smith","raw_affiliation_strings":["Department of Physics, Arizona State University, Tempe, Arizona 85287, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Arizona State University, Tempe, Arizona 85287, USA","institution_ids":["https://openalex.org/I55732556"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":{"value":1950,"currency":"USD","value_usd":1950},"fwci":1.103,"has_fulltext":true,"cited_by_count":30,"citation_normalized_percentile":{"value":0.73589293,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"8","issue":"7","first_page":"Q3041","last_page":"Q3045"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.8960000276565552,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.8960000276565552,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.1014999970793724,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/beta-ga2o3","display_name":"\u03b2-Ga2O3","score":0.9210000038146973},{"id":"https://openalex.org/keywords/schottky-rectifiers","display_name":"Schottky rectifiers","score":0.9559999704360962},{"id":"https://openalex.org/keywords/radiation-damage","display_name":"radiation damage","score":0.652999997138977},{"id":"https://openalex.org/keywords/carrier-removal-rate","display_name":"carrier removal rate","score":0.906000018119812},{"id":"https://openalex.org/keywords/ideality-factor","display_name":"ideality factor","score":0.7480000257492065},{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":1.0},{"id":"https://openalex.org/keywords/on-resistance","display_name":"on-resistance","score":0.9369999766349792},{"id":"https://openalex.org/keywords/reverse-recovery-time","display_name":"reverse recovery time","score":0.8209999799728394},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.7059999704360962},{"id":"https://openalex.org/keywords/radiation-hardness","display_name":"radioresistance","score":0.6430000066757202},{"id":"https://openalex.org/keywords/conductive-substrates","display_name":"conductive substrates","score":0.5659999847412109}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.8352511525154114},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.814272403717041},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.6489201188087463},{"id":"https://openalex.org/C111337013","wikidata":"https://www.wikidata.org/wiki/Q2737837","display_name":"Irradiation","level":2,"score":0.6243561506271362},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5683804750442505},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5309461951255798},{"id":"https://openalex.org/C7910260","wikidata":"https://www.wikidata.org/wiki/Q11523","display_name":"Gamma ray","level":2,"score":0.48548462986946106},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4307384192943573},{"id":"https://openalex.org/C66385817","wikidata":"https://www.wikidata.org/wiki/Q103517","display_name":"Alpha particle","level":2,"score":0.4283221364021301},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.4168910086154938},{"id":"https://openalex.org/C177322064","wikidata":"https://www.wikidata.org/wiki/Q750955","display_name":"Radiochemistry","level":1,"score":0.32299044728279114},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.19781601428985596},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08863213658332825},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.08852478861808777},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0688384473323822},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/2.0091907jss","doi":"https://doi.org/10.1149/2.0091907jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0091907jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0091907jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1149/2.0091907jss","doi":"https://doi.org/10.1149/2.0091907jss","is_oa":true,"landing_page_url":"https://doi.org/10.1149/2.0091907jss","pdf_url":"https://iopscience.iop.org/article/10.1149/2.0091907jss/pdf","source":{"id":"https://openalex.org/S2493531148","display_name":"ECS Journal of Solid State Science and Technology","issn_l":"2162-8769","issn":["2162-8769","2162-8777"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"ECS Journal of Solid State Science and Technology","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[{"id":"https://openalex.org/G3250345119","display_name":null,"funder_award_id":"HDTRA1\u201017\u20101\u20100011","funder_id":"https://openalex.org/F4320332186","funder_display_name":"Defense Threat Reduction Agency"},{"id":"https://openalex.org/G4369048575","display_name":null,"funder_award_id":"2017M1A2A2087351","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G7949355915","display_name":null,"funder_award_id":"2017M1A3A3A02015033","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G8321713573","display_name":null,"funder_award_id":"HDTRA1-17-1-0011","funder_id":"https://openalex.org/F4320322030","funder_display_name":"Ministry of Science, ICT and Future Planning"},{"id":"https://openalex.org/G8831171630","display_name":null,"funder_award_id":"2017M1A2A2087351","funder_id":"https://openalex.org/F4320322030","funder_display_name":"Ministry of Science, ICT and Future Planning"}],"funders":[{"id":"https://openalex.org/F4320309835","display_name":"Arizona State University","ror":"https://ror.org/03efmqc40"},{"id":"https://openalex.org/F4320315885","display_name":"Australian Government","ror":"https://ror.org/0314h5y94"},{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320321373","display_name":"Korea University","ror":"https://ror.org/047dqcg40"},{"id":"https://openalex.org/F4320322030","display_name":"Ministry of Science, ICT and Future Planning","ror":"https://ror.org/032e49973"},{"id":"https://openalex.org/F4320322115","display_name":"Korea Atomic Energy Research Institute","ror":"https://ror.org/01xb4fs50"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320332186","display_name":"Defense Threat Reduction Agency","ror":"https://ror.org/04tz64554"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2914666757.pdf","grobid_xml":"https://content.openalex.org/works/W2914666757.grobid-xml"},"referenced_works_count":50,"referenced_works":["https://openalex.org/W1659720364","https://openalex.org/W1971261619","https://openalex.org/W1974850834","https://openalex.org/W1975210949","https://openalex.org/W1978598079","https://openalex.org/W1984904477","https://openalex.org/W1992721151","https://openalex.org/W1994995648","https://openalex.org/W1998437016","https://openalex.org/W2003300741","https://openalex.org/W2010605803","https://openalex.org/W2017697802","https://openalex.org/W2021829584","https://openalex.org/W2023920635","https://openalex.org/W2028931051","https://openalex.org/W2029894493","https://openalex.org/W2046966749","https://openalex.org/W2068914302","https://openalex.org/W2074536946","https://openalex.org/W2106419577","https://openalex.org/W2107405723","https://openalex.org/W2121443541","https://openalex.org/W2127701481","https://openalex.org/W2136033905","https://openalex.org/W2136607672","https://openalex.org/W2141741891","https://openalex.org/W2147649317","https://openalex.org/W2169904535","https://openalex.org/W2170622860","https://openalex.org/W2171533977","https://openalex.org/W2259768559","https://openalex.org/W2576109203","https://openalex.org/W2612763167","https://openalex.org/W2616447492","https://openalex.org/W2765567326","https://openalex.org/W2783187026","https://openalex.org/W2783668429","https://openalex.org/W2783881877","https://openalex.org/W2784929437","https://openalex.org/W2788394059","https://openalex.org/W2792723914","https://openalex.org/W2794090443","https://openalex.org/W2799665511","https://openalex.org/W2802392777","https://openalex.org/W2888907893","https://openalex.org/W2889987339","https://openalex.org/W2897102015","https://openalex.org/W2904883747","https://openalex.org/W2905220617","https://openalex.org/W2907174929"],"related_works":["https://openalex.org/W4405285165","https://openalex.org/W4388866060","https://openalex.org/W4416588071","https://openalex.org/W2799665511","https://openalex.org/W2787329518","https://openalex.org/W7145702600","https://openalex.org/W4416582872","https://openalex.org/W7145524936","https://openalex.org/W2783881877","https://openalex.org/W4390075034"],"abstract_inverted_index":{"\u03b2-Ga":[0],"2":[1,87,110,135],"O":[2,111,136],"3":[3,112,137],"Schottky":[4,70],"rectifiers":[5],"consisting":[6],"of":[7,39,50,95,108],"thick":[8],"(10":[9],"\u03bcm)":[10],"epitaxial":[11],"drift":[12],"regions":[13],"on":[14,106],"conducting":[15],"substrates":[16],"are":[17,80,101],"shown":[18],"to":[19,24,33,48,86,124,132],"have":[20],"a":[21],"high":[22],"tolerance":[23],"60":[25],"Co":[26],"gamma":[27,44],"ray":[28],"irradiation.":[29],"This":[30],"is":[31],"due":[32],"the":[34,61,127,133],"low":[35],"carrier":[36],"removal":[37],"rate":[38],"<1":[40],"cm":[41,52,91],"\u22121":[42,53],"for":[43,54,83],"rays,":[45],"which":[46],"contrasts":[47],"values":[49],"300\u2013500":[51],"MeV":[55],"protons":[56],"and":[57,76,130],"alpha":[58],"particles":[59],"in":[60,66,126],"same":[62],"rectifier":[63],"structures.":[64],"Changes":[65],"diode":[67],"ideality":[68],"factor,":[69],"barrier":[71],"height,":[72],"on-resistance,":[73],"on-off":[74],"ratio,":[75],"reverse":[77],"recovery":[78],"time":[79],"all":[81],"minimal":[82],"fluences":[84],"up":[85],"\u00d7":[88],"10":[89],"16":[90],"\u22122":[92],"(absorbed":[93],"dose":[94],"100":[96],"kGy":[97],"(Si)).":[98],"These":[99],"results":[100],"consistent":[102],"with":[103],"previous":[104],"reports":[105],"gamma-irradiation":[107],"Ga":[109,134],"metal":[113],"oxide":[114],"semiconductor":[115],"field":[116],"effect":[117],"transistors":[118],"(MOSFETs)":[119],"where":[120],"changes":[121],"were":[122],"ascribed":[123],"damage":[125],"gate":[128],"dielectric":[129],"not":[131],"itself.":[138]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":6},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2019-02-21T00:00:00"}