{"id":"https://openalex.org/W2914519136","doi":"https://doi.org/10.1116/1.5063795","title":"Atomic layer etching of AlGaN using Cl2 and Ar gas chemistry and UV damage evaluation","display_name":"Atomic layer etching of AlGaN using Cl2 and Ar gas chemistry and UV damage evaluation","publication_year":2019,"publication_date":"2019-01-23","ids":{"openalex":"https://openalex.org/W2914519136","doi":"https://doi.org/10.1116/1.5063795","mag":"2914519136"},"language":"en","primary_location":{"id":"doi:10.1116/1.5063795","doi":"https://doi.org/10.1116/1.5063795","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.5063795","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5049767012","display_name":"Hiroyuki Fukumizu","orcid":"https://orcid.org/0009-0006-9077-8538","observed_orcids":["https://orcid.org/0009-0006-9077-8538"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroyuki Fukumizu","raw_affiliation_strings":["Corporate Manufacturing Engineering Center, Toshiba Corporation 1 , Yokohama 235-0017, Japan","2Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate Manufacturing Engineering Center, Toshiba Corporation 1 , Yokohama 235-0017, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"2Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033650757","display_name":"Makoto Sekine","orcid":"https://orcid.org/0000-0003-2748-2436","observed_orcids":["https://orcid.org/0000-0003-2748-2436"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Makoto Sekine","raw_affiliation_strings":["Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University 2 , Nagoya 464-8603, Japan","1Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University 2 , Nagoya 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]},{"raw_affiliation_string":"1Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006676797","display_name":"Masaru Hori","orcid":"https://orcid.org/0000-0002-1442-0749","observed_orcids":["https://orcid.org/0000-0002-1442-0749"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaru Hori","raw_affiliation_strings":["Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University 2 , Nagoya 464-8603, Japan","1Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University 2 , Nagoya 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]},{"raw_affiliation_string":"1Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-0017, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075091969","display_name":"Koji Kanomaru","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koji Kanomaru","raw_affiliation_strings":["Corporate Manufacturing Engineering Center, Toshiba Corporation 1 , Yokohama 235-0017, Japan","2Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate Manufacturing Engineering Center, Toshiba Corporation 1 , Yokohama 235-0017, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"2Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102169526","display_name":"Takuo Kikuchi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takuo Kikuchi","raw_affiliation_strings":["Corporate Manufacturing Engineering Center, Toshiba Corporation 1 , Yokohama 235-0017, Japan","2Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Corporate Manufacturing Engineering Center, Toshiba Corporation 1 , Yokohama 235-0017, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"2Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.1256,"has_fulltext":false,"cited_by_count":37,"citation_normalized_percentile":{"value":0.76819569,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":92,"max":99},"biblio":{"volume":"37","issue":"2","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8560000061988831,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.8560000061988831,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.10830000042915344,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.016699999570846558,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/atomic-layer-etching","display_name":"atomic layer etching","score":0.9990000128746033},{"id":"https://openalex.org/keywords/algan","display_name":"AlGaN","score":0.996999979019165},{"id":"https://openalex.org/keywords/chlorine-plasma","display_name":"chlorine plasma","score":0.6610000133514404},{"id":"https://openalex.org/keywords/argon-plasma","display_name":"argon plasma","score":0.9789999723434448},{"id":"https://openalex.org/keywords/uv-damage","display_name":"UV damage","score":0.765999972820282},{"id":"https://openalex.org/keywords/etch-damage","display_name":"etching damage","score":0.7990000247955322},{"id":"https://openalex.org/keywords/reactive-ion-etching","display_name":"reactive ion etching","score":0.8669999837875366},{"id":"https://openalex.org/keywords/surface-roughening","display_name":"surface roughening","score":0.7879999876022339},{"id":"https://openalex.org/keywords/cathodoluminescence","display_name":"cathodoluminescence","score":0.9589999914169312}],"concepts":[{"id":"https://openalex.org/C139861200","wikidata":"https://www.wikidata.org/wiki/Q369794","display_name":"Cathodoluminescence","level":3,"score":0.8296347856521606},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.8166221380233765},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.7995462417602539},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6672503352165222},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6603777408599854},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.6206052303314209},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.5679765939712524},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.4766564965248108},{"id":"https://openalex.org/C115537861","wikidata":"https://www.wikidata.org/wiki/Q7645993","display_name":"Surface modification","level":2,"score":0.4755154252052307},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3961717486381531},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3660821318626404},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2481372356414795},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.22333374619483948},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.09207338094711304},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.05255952477455139},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.5063795","doi":"https://doi.org/10.1116/1.5063795","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.5063795","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W1580727035","https://openalex.org/W1883168124","https://openalex.org/W1962245848","https://openalex.org/W1965111243","https://openalex.org/W1970268204","https://openalex.org/W1978361229","https://openalex.org/W1991298825","https://openalex.org/W1996482305","https://openalex.org/W2002949822","https://openalex.org/W2005792776","https://openalex.org/W2008217233","https://openalex.org/W2017820532","https://openalex.org/W2033464198","https://openalex.org/W2040072381","https://openalex.org/W2044493643","https://openalex.org/W2050878962","https://openalex.org/W2051160376","https://openalex.org/W2051193607","https://openalex.org/W2052018292","https://openalex.org/W2052633440","https://openalex.org/W2056947860","https://openalex.org/W2062384588","https://openalex.org/W2068301610","https://openalex.org/W2087230790","https://openalex.org/W2094996237","https://openalex.org/W2095567118","https://openalex.org/W2103119574","https://openalex.org/W2111247862","https://openalex.org/W2114001304","https://openalex.org/W2124964377","https://openalex.org/W2139228516","https://openalex.org/W2147584503","https://openalex.org/W2148833243","https://openalex.org/W2153961385","https://openalex.org/W2158892965","https://openalex.org/W2169301346","https://openalex.org/W2552210012","https://openalex.org/W2558423525","https://openalex.org/W2604013606","https://openalex.org/W2617106871"],"related_works":["https://openalex.org/W2947128894","https://openalex.org/W4386514914","https://openalex.org/W4391639394","https://openalex.org/W2617106871","https://openalex.org/W3129820908","https://openalex.org/W3014017113","https://openalex.org/W4381952448","https://openalex.org/W3131043479","https://openalex.org/W3164031477","https://openalex.org/W4317830324"],"abstract_inverted_index":{"The":[0,94,119],"atomic":[1],"layer":[2,61,96,100],"etching":[3,30,56,134],"(ALE)":[4],"characteristics":[5],"of":[6,58,72,89,129],"AlGaN":[7,60,99],"using":[8,63,116,125],"Cl2":[9,117,126,130],"plasma":[10,17],"in":[11,18,24,41,51,65,69,79],"the":[12,19,42,45,55,59,70,85,98,113,133],"modification":[13,114,123],"step":[14,21,115,124],"and":[15,35],"Ar":[16],"removal":[20],"were":[22,39],"investigated":[23],"comparison":[25],"with":[26],"conventional":[27],"reactive":[28],"ion":[29],"(RIE).":[31],"Although":[32],"surface":[33,142],"roughening":[34],"GaN":[36,95],"composition":[37],"changes":[38],"observed":[40],"RIE":[43],"process,":[44],"ALE":[46,73,90],"process":[47,87],"did":[48],"not":[49],"result":[50],"such":[52],"changes.":[53],"However,":[54],"damage":[57,135],"evaluated":[62],"cathodoluminescence":[64],"AlGaN/GaN":[66],"stacked":[67],"films":[68],"case":[71],"was":[74,82,101,136],"30%":[75],"higher":[76],"than":[77],"that":[78],"RIE.":[80,93],"This":[81,104],"attributed":[83],"to":[84,92],"longer":[86],"time":[88],"compared":[91],"underneath":[97],"also":[102],"damaged.":[103],"could":[105],"be":[106],"mainly":[107],"caused":[108],"by":[109],"UV":[110],"photons":[111],"during":[112],"plasma.":[118],"authors":[120],"introduced":[121],"a":[122],"gas":[127],"instead":[128],"plasma;":[131],"thus,":[132],"successfully":[137],"reduced":[138],"while":[139],"maintaining":[140],"good":[141],"characteristics.":[143]},"counts_by_year":[{"year":2026,"cited_by_count":5},{"year":2025,"cited_by_count":9},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":10},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":5}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2019-02-21T00:00:00"}