{"id":"https://openalex.org/W2913890224","doi":"https://doi.org/10.7567/1347-4065/aaeb39","title":"Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl 2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source","display_name":"Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl 2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source","publication_year":2019,"publication_date":"2019-01-21","ids":{"openalex":"https://openalex.org/W2913890224","doi":"https://doi.org/10.7567/1347-4065/aaeb39","mag":"2913890224"},"language":"en","primary_location":{"id":"doi:10.7567/1347-4065/aaeb39","doi":"https://doi.org/10.7567/1347-4065/aaeb39","is_oa":false,"landing_page_url":"https://doi.org/10.7567/1347-4065/aaeb39","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074423518","display_name":"Atsushi Tanide","orcid":"https://orcid.org/0000-0002-8606-7649","observed_orcids":["https://orcid.org/0000-0002-8606-7649"]},"institutions":[{"id":"https://openalex.org/I4210095113","display_name":"SCREEN (Japan)","ror":"https://ror.org/00p4am161","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210095113"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Atsushi Tanide","raw_affiliation_strings":["Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]},{"raw_affiliation_string":"SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan","institution_ids":["https://openalex.org/I4210095113"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089071651","display_name":"Shohei Nakamura","orcid":"https://orcid.org/0000-0001-6386-500X","observed_orcids":["https://orcid.org/0000-0001-6386-500X","https://orcid.org/0009-0000-3753-4493"]},"institutions":[{"id":"https://openalex.org/I4210095113","display_name":"SCREEN (Japan)","ror":"https://ror.org/00p4am161","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210095113"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shohei Nakamura","raw_affiliation_strings":["SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan","institution_ids":["https://openalex.org/I4210095113"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018717508","display_name":"Akira Horikoshi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210095113","display_name":"SCREEN (Japan)","ror":"https://ror.org/00p4am161","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210095113"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akira Horikoshi","raw_affiliation_strings":["Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]},{"raw_affiliation_string":"SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan","institution_ids":["https://openalex.org/I4210095113"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043213753","display_name":"Shigeru Takatsuji","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210095113","display_name":"SCREEN (Japan)","ror":"https://ror.org/00p4am161","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210095113"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shigeru Takatsuji","raw_affiliation_strings":["SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan","institution_ids":["https://openalex.org/I4210095113"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109956572","display_name":"Motohiro Kohno","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210095113","display_name":"SCREEN (Japan)","ror":"https://ror.org/00p4am161","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210095113"]},{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Motohiro Kohno","raw_affiliation_strings":["Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]},{"raw_affiliation_string":"SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan","institution_ids":["https://openalex.org/I4210095113"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076264527","display_name":"Kazuo Kinose","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210095113","display_name":"SCREEN (Japan)","ror":"https://ror.org/00p4am161","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210095113"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuo Kinose","raw_affiliation_strings":["SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan","institution_ids":["https://openalex.org/I4210095113"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110957309","display_name":"Soichi Nadahara","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210095113","display_name":"SCREEN (Japan)","ror":"https://ror.org/00p4am161","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210095113"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Soichi Nadahara","raw_affiliation_strings":["SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"SCREEN Holdings Co., Ltd., Fushimi, Kyoto, 602-8486, Japan","institution_ids":["https://openalex.org/I4210095113"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109422327","display_name":"Masazumi Nishikawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405264711","display_name":"EMD Corporation (Japan)","ror":"https://ror.org/02qtxtt36","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405264711"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masazumi Nishikawa","raw_affiliation_strings":["EMD Corp., Yasu, Shiga, 520-2323, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EMD Corp., Yasu, Shiga, 520-2323, Japan","institution_ids":["https://openalex.org/I4405264711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040538055","display_name":"Akinori Ebe","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4405264711","display_name":"EMD Corporation (Japan)","ror":"https://ror.org/02qtxtt36","country_code":"JP","type":"company","lineage":["https://openalex.org/I4405264711"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akinori Ebe","raw_affiliation_strings":["EMD Corp., Yasu, Shiga, 520-2323, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EMD Corp., Yasu, Shiga, 520-2323, Japan","institution_ids":["https://openalex.org/I4405264711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061563484","display_name":"Kenji Ishikawa","orcid":"https://orcid.org/0000-0002-8288-6620","observed_orcids":["https://orcid.org/0000-0002-8288-6620"]},"institutions":[{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenji Ishikawa","raw_affiliation_strings":["Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006676797","display_name":"Masaru Hori","orcid":"https://orcid.org/0000-0002-1442-0749","observed_orcids":["https://orcid.org/0000-0002-1442-0749"]},"institutions":[{"id":"https://openalex.org/I60134161","display_name":"Nagoya University","ror":"https://ror.org/04chrp450","country_code":"JP","type":"education","lineage":["https://openalex.org/I60134161"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaru Hori","raw_affiliation_strings":["Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nagoya University, Chikusa, Nagoya, Aichi 464-8603, Japan","institution_ids":["https://openalex.org/I60134161"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5074423518"],"corresponding_institution_ids":["https://openalex.org/I4210095113","https://openalex.org/I60134161"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.2231,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.45276466,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":95},"biblio":{"volume":"58","issue":"SA","first_page":"SAAF04","last_page":"SAAF04"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":0.8349999785423279},{"id":"https://openalex.org/keywords/heteroepitaxy","display_name":"heteroepitaxy","score":0.9359999895095825},{"id":"https://openalex.org/keywords/magnetron-sputtering","display_name":"magnetron sputtering","score":0.8920000195503235},{"id":"https://openalex.org/keywords/inductively-coupled-plasma","display_name":"inductively coupled plasma","score":0.9430000185966492},{"id":"https://openalex.org/keywords/v-iii-ratio","display_name":"V/III ratio","score":0.6600000262260437},{"id":"https://openalex.org/keywords/aln-buffer-layer","display_name":"AlN buffer layer","score":0.8529999852180481},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.9760000109672546},{"id":"https://openalex.org/keywords/chlorine-etching","display_name":"chlorine etching","score":0.6790000200271606},{"id":"https://openalex.org/keywords/growth-temperature","display_name":"growth temperature","score":0.6520000100135803},{"id":"https://openalex.org/keywords/crystallinity","display_name":"crystallinity","score":0.7039999961853027},{"id":"https://openalex.org/keywords/lateral-growth","display_name":"lateral growth","score":0.5410000085830688}],"concepts":[{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.7513564229011536},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.6585931181907654},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5746992230415344},{"id":"https://openalex.org/C550372918","wikidata":"https://www.wikidata.org/wiki/Q861","display_name":"Gallium","level":2,"score":0.5667843818664551},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5630415081977844},{"id":"https://openalex.org/C46275449","wikidata":"https://www.wikidata.org/wiki/Q2458815","display_name":"Crystallinity","level":2,"score":0.5444908142089844},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5357327461242676},{"id":"https://openalex.org/C61427134","wikidata":"https://www.wikidata.org/wiki/Q847609","display_name":"Sputter deposition","level":4,"score":0.5315567851066589},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.5086055994033813},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.4716443419456482},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.47142595052719116},{"id":"https://openalex.org/C95974651","wikidata":"https://www.wikidata.org/wiki/Q2454436","display_name":"Inductively coupled plasma","level":3,"score":0.44284072518348694},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.4369582533836365},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.39093443751335144},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.32203149795532227},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.29427024722099304},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.13005730509757996},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.11079692840576172},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.10821941494941711},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.10313048958778381},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.06833532452583313},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.7567/1347-4065/aaeb39","doi":"https://doi.org/10.7567/1347-4065/aaeb39","is_oa":false,"landing_page_url":"https://doi.org/10.7567/1347-4065/aaeb39","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":38,"referenced_works":["https://openalex.org/W1580727035","https://openalex.org/W1964188499","https://openalex.org/W1967656316","https://openalex.org/W1972904387","https://openalex.org/W1979338733","https://openalex.org/W1981137776","https://openalex.org/W2002501162","https://openalex.org/W2007930532","https://openalex.org/W2017625189","https://openalex.org/W2024186882","https://openalex.org/W2042705332","https://openalex.org/W2043221657","https://openalex.org/W2044585023","https://openalex.org/W2048434361","https://openalex.org/W2049697895","https://openalex.org/W2050487076","https://openalex.org/W2051884677","https://openalex.org/W2053297773","https://openalex.org/W2054203671","https://openalex.org/W2056798331","https://openalex.org/W2057700146","https://openalex.org/W2059310165","https://openalex.org/W2059942281","https://openalex.org/W2060303222","https://openalex.org/W2061179634","https://openalex.org/W2075288744","https://openalex.org/W2081483142","https://openalex.org/W2092201166","https://openalex.org/W2092270129","https://openalex.org/W2102894260","https://openalex.org/W2119392370","https://openalex.org/W2142282495","https://openalex.org/W2145505151","https://openalex.org/W2169019928","https://openalex.org/W2212022439","https://openalex.org/W2220035345","https://openalex.org/W2321061939","https://openalex.org/W2466033956"],"related_works":["https://openalex.org/W2003536072","https://openalex.org/W2033985516","https://openalex.org/W2319913682","https://openalex.org/W269021021","https://openalex.org/W2095158450","https://openalex.org/W2020409491","https://openalex.org/W4407172319","https://openalex.org/W4402787374","https://openalex.org/W2045737080","https://openalex.org/W2017187907"],"abstract_inverted_index":{"Abstract":[0],"Hetero-epitaxial":[1],"growth":[2,76,92,99,136],"of":[3,57,77,94,112,138,158],"a":[4,18,50,58,62,90,144],"gallium":[5,28,59],"nitride":[6],"(GaN)":[7],"film":[8,80,117],"on":[9,17],"an":[10],"AlN(0":[11],"0":[12,13,20,21,150,151],"1)":[14,22],"buffer":[15],"layer":[16],"sapphire(0":[19],"substrate":[23],"was":[24,81,118,130,153,172],"demonstrated":[25],"by":[26,123],"supplying":[27,44],"precursors":[29],"and":[30,61,162],"nitrogen":[31],"radicals":[32],"separately":[33],"from":[34],"two":[35],"individually":[36],"operated":[37],"plasma":[38,55],"sources":[39,48],"to":[40,121],"control":[41],"the":[42,78,98,124,128,135,156,169],"V/III":[43],"ratio":[45],"precisely.":[46],"The":[47],"were":[49],"reactive":[51,125],"Ar-Cl":[52],"2":[53,70,72,85,114,161,165],"-mixture":[54],"sputtering":[56,88],"target":[60],"remote":[63],"low":[64,91],"inductance":[65],"antenna":[66],"(LIA)":[67],"for":[68],"N":[69,164],"-H":[71],"inductively":[73],"coupled-plasma.":[74],"Lateral":[75],"GaN":[79,148],"observed":[82],"in":[83],"0.5%-Cl":[84],"-added":[86],"Ar":[87],"at":[89,102,131,155],"temperature":[93,129,137],"670":[95,139],"\u00b0C,":[96,140],"whilst":[97],"mode":[100],"coalesced":[101],"temperatures":[103],"lower":[104],"than":[105,110],"600":[106],"\u00b0C.":[107,133],"With":[108],"more":[109],"2.0%":[111],"Cl":[113,160],",":[115,166],"no":[116],"deposited":[119],"due":[120],"etching":[122],"chlorine":[126],"whenever":[127],"500":[132],"At":[134],"crystallinity":[141],"with":[142],"narrow":[143],"X-ray":[145],"rocking":[146],"curve":[147],"(0":[149],"2)":[152],"obtained":[154],"condition":[157],"0.5%":[159],"27.4%":[163],"even":[167],"though":[168],"background":[170],"pressure":[171],"10":[173],"\u22124":[174],"Pa.":[175]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2019-02-21T00:00:00"}